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Elastic properties of hot pressed polycrystalline quartz and rutile as function of pressure, obtaining pressure coefficients of compressional and shear wave velocities
Polycrystalline ammonium cyanide IR absorption spectrum as function of temperature, discussing ammonium ion hydrogen bonding to C or N atoms
Phenomenological and statistical analysis of fracture in polycrystalline aluminum oxide
Room temperature tensile deformation and fracture of polycrystalline graphite as function of particle size, bulk density, preferred orientation, and stress action direction
Polycrystalline rocks elastic constant and nonelastic behavior, discussing Voigt, Reuss and Hill averaging methods
Stress-strain curves of polycrystalline metals and composites using single crystal elastoplastic model
Transport mechanism for holes in polycrystalline Ge films based on Matthiessen rule, considering surface scattering and dislocation
Crack opening mechanism for high temperature creep of polycrystalline graphite
Measuring instrument for amorphous and polycrystalline materials resistivity and Seebeck coefficient as function of temperature and pressure
The creep properties of high-purity, polycrystalline chromium were determined over the temperature range 0.51 to 0.78 T sub m, where T sub m is the melting temperature. Creep rates determined from step-load creep tests can be represented by the general creep equation; epsilon/D = k((sigma/E) to the nth power) where epsilon is the minimum creep rate, D is the diffusivity, k is the creep rate constant, sigma is the applied stress, E is the modulus, and n is the stress exponent, equal to 4.3 for chromium. This correlation and metallographic observations suggest a dislocation climb mechanism is operative in the creep of chromium over the temperature range investigated.
The magnetic moment per gram, sigma (H sub I, T), where H sub I is the internal field and T is the temperature, was measured for a polycrystalline iron sphere with the vibrating-sample magnetometer. The instrument was calibrated by using a method utilizing the high permeability of an iron sphere. The spontaneous moment, sigma(0, T),was obtained from plots of sigma(H sub I, T) as a function of H sub I for temperatures from 4.2 K to room temperature. The value of the spontaneous moment, sigma(0, T), at 298.9 K was 217.5 + or -0.4 emu/g. The extrapolated moment, sigma(0, 0),at absolute zero from a plot of sigma(0, T) as a function of T to 3/2 power was 221.7 + or - 0.4 emu/g.
Diffusional creep in a polycrystalline alloy containing second-phase particles can disrupt the particle morphology. For alloys which depend on the particle distribution for strength, changes in the particle morphology can affect the mechanical properties. Recent observations of diffusional creep in alloys containing soluble particles (gamma-prime strengthened Ni base alloys) and inert particles have been reexamined in light of the basic mechanisms of diffusional creep, and a generalized model of this effect is proposed. The model indicates that diffusional creep will generally result in particle-free regions in the vicinity of grain boundaries serving as net vacancy sources. The factors which control the changes in second-phase morphology have been identified, and methods of reducing the effects of diffusional creep are suggested.
Method is simple and eliminates requirement for unreliable special etchants. Structure is graded in resistivity to prevent punch-through and has very narrow channel length to increase frequency response. Contacts are on top to permit planar integrated circuit structure. Polycrystalline shield will prevent creation of inversion layer in isolated region.
The electrical resistivity of polycrystalline silicon films was investigated. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity was found to be independent of dopant atom concentration in the lightly doped regions but was a strong function of dopant levels in the more heavily doped regions. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.
The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as-deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 10 to the 16th atoms/per cu cm was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.
A new method of producing p-n junction semiconductors for solar cells was described; the principal objective of this investigation is to reduce production costs significantly by depositing polycrystalline silicon on a relatively cheap substrate such as metallurgical-grade silicon, graphite, or steel. The silicon layer contains appropriate dopants, and the substrates are coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures of these compounds.
The compressive yield strength of arc-melted polycrystalline zirconium carbide has been found to vary from 77 kg per sq mm at 1200 C to 19 kg per sq mm at 1800 C. Yield drops were observed with plastic strain-rates greater than 0.003/sec but not with slower strain rates. Strain-rate change experiments yielded values for the strain-rate sensitivity parameter m which range from 6.5 at 1500 C to 3.8 at 1800 C, and the product dislocation velocity stress exponent times T was found to decrease linearly with increasing temperature. The deformation rate results are consistent with the Kelly-Rowcliffe model in which the diffusion of carbon assists the motion of dislocations.
Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.