A novel Ni/Y2O3/4H-SiC heteroepitaxial metal–oxide–semiconductor (MOS) betavoltaic cell
Not provided.
Engineering↗
SEARCH · Engineering Papers
Results for “physical sciences and engineering”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Radioisotope dating of nuclear materials using cryogenic decay energy spectrometry
Cryogenic decay energy spectrometry provides high energy resolution and enables absolute decay counting, offering an alternative measurement technique for radiochronometry. A cryogenic decay energy spectrometry experiment was conducted using a magnetic microcalorimeter to determine the age of a plutonium sample. The energy resolution was measured at 0.05% from 5 to 6 MeV. The time since sample purification was determined using the measured concentration ratio of the 241 Am/ 241 Pu radiochronometer. Sample age estimates based on 241 Pu alpha-decay and beta-decay counts, along with 241 Am decay counts, align with the expected sample age within expanded uncertainty (k = 2), supporting the accuracy of cryogenic decay energy spectrometry as a radiochronometric method.
and nuclear chemistry↗
Characterization of Epitaxial β-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors
Not provided.
Engineering↗
Thermoelectric Properties of Cobalt-Doped β-FeSi2 with SiC Nanoparticle Inclusions
Not provided.
Engineering↗
Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors
The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.
36 MATERIALS SCIENCE↗
Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS
Not provided.
Engineering↗
On the convergence of statistics in simulations of stationary incompressible turbulent flows
When reporting statistics from simulations of statistically stationary chaotic phenomenon, it is important to verify that the simulations are time-converged. This condition is connected with the statistical error or number of digits with which statistics can be reliably reported. In this work we consider numerical experiments of low Reynolds number incompressible homogeneous and isotropic turbulence as a model problem to investigate statistical convergence over finite simulation times. Specifically, we investigate the time integration requirements that allow meaningful reporting of the statistical error associated with finiteness of the temporal domain. We address two key questions: (1) How long should a simulation be performed in terms of large eddy time, and (2) How should the simulation time be divided among temporal windows over which a quantity of interest is estimated so that its statistical error could be reliably reported? We find that reliable reporting of statistical errors requires simulations on the order of 10 4 large eddy times, which is orders of magnitude longer than typically performed. Additionally, data post-processing should employ windows of at least ten times the large eddy time scale, with the most robust computation of statistical error of the mean requiring window sizes of an additional factor of ten. For practical simulations, we demonstrate that it is possible to estimate the statistical error within a factor of two under a less stringent condition in which a minimum of four windows with size at least ten large eddy times are used. In conclusion, our observations for homogeneous isotropic turbulence are also shown to hold in turbulent channel flow.
42 ENGINEERING↗
Meshless discretization of the discrete-ordinates transport equation with integration based on Voronoi cells
The time-dependent, gray, linear radiation transport equation is discretized using the meshless local Petrov-Galerkin method with reproducing kernels. The integration is performed using a Voronoi tessellation, which creates a partition of unity that only depends on the position and extent of the kernels. The resolution of the integration automatically follows the particles and requires no manual adjustment. The discretization includes streamline-upwind Petrov-Galerkin stabilization to prevent oscillations and improve numerical conditioning. The angular quadrature is selectively refineable to increase angular resolution in chosen directions. The time discretization is done using backward Euler. The transport solve for each direction and the solve for the scattering source are both done using Krylov iterative methods. The results indicate first-order convergence in time and second-order convergence in space for linear reproducing kernels.
97 MATHEMATICS AND COMPUTING↗
Battery anode design: From 1D nanostructure to 3D nanoarchitecture – Enabling next-generation energy storage technology
Recently, many studies have reported the efficacy of 1D silicon nanostructures as anode materials (mostly nanowires) due to their large surface to volume ratio which could be an advantage in terms of charging kinetics. Anode design is a crucial factor for the further development of lithium-ion battery (LIB) technology, especially in terms of achieving the high charging rate performance, as typically needed in electric vehicles (EV). 3D nanostructures have been identified as the key to dramatically enhanced charging rate of LIB, in addition to the change of materials (from carbon-based anode to silicon-based). However, existing fabrication methodologies for 3D nanostructures are inherently expensive – using advanced lithography techniques or other nanopatterning methodologies, as well as using additive manufacturing approaches. Electrospinning (as an integrated additive manufacturing methodology) may be used to produce low-cost 3D-printed fiber structures. Here, in the present study, we demonstrate the groundwork in this field of research in the past 3–4 years, which would allow the extension of this special additive manufacturing approach to reach nanoscale 3D-printed fiber structures more economically and with scalability for manufacturing. This would pave the way to achieve the order of magnitude increase in battery charging rate as needed to realize the vision of the electrification of mobility/transportation.
25 ENERGY STORAGE↗
Defects in local atomic structure of ZnO films sensitized with tinto and mangrove organic dyes
Not provided.
Engineering↗
Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
Silicon carbide as a wide bandgap semiconductor is of great research interest for its widespread deployment in a range of electronic and optoelectronic devices, particularly in power electronics. However, defects in silicon carbide crystals are still major concerns that is hampering the development of high-performance devices. X-ray topography, particularly using the synchrotron beam has been instrumental in characterizing and analyzing defect configurations in silicon carbide crystals to optimize crystal growth as well as understand the effect of defects on device performance. Here, in recent years, the use of ray-tracing simulation technique based on the orientation contrast mechanism to simulate contrast of defects observed on actual X-ray topographs has proven to be an effective approach to investigate the nature of crystallographic defects in various semiconductors. This review discusses the principle of ray-tracing simulation and its application and modifications to incorporate the effects of surface relaxation and photoelectric absorption to better simulate different dislocations observed in 4H–SiC as well as 6H–SiC crystals of various orientations. The adaptation to weak beam topography and plane wave topography is also discussed. The application of ray-tracing simulation in dislocation characterization of silicon carbide of different polytypes is systematically reviewed including different types of dislocations observed in both off-axis wafers and axial-sliced samples through synchrotron X-ray topography under various beam conditions, recording geometries and reflections. The result of ray-tracing simulation is further utilized in other studies including the investigation of effective penetration depth of all types of dislocations lying on the basal plane on grazing-incidence X-ray topography.
Engineering↗
High strain-rate strength response of single crystal tantalum through in-situ hole closure imaging experiments
The properties of crystalline materials often depend on directionality and operating conditions. Specifically, the strength of materials can depend anisotropically on crystal direction and the loading condition. To probe these effects, a preliminary series of high strain-rate (> 105/s) strength plate-impact hole closure experiments were performed on high purity single crystal Tantalum cubes. The orientation of the single crystals with respect to impact/loading were varied to provide data to inform crystal plasticity modeling efforts. The experiments consist of in-situ high-resolution X-ray radiographic imaging of the hole collapse under dynamic compression conditions to infer the material strength via its resistance to closure at increasing levels of plastic strain. The experiments are compared against hydrocode simulation predictions. Here, a comparison with simple elastic perfectly plastic strength model predictions is presented to elucidate the response of the different crystal orientations at high strain-rate and large plastic strains.
36 MATERIALS SCIENCE↗