Photoemission from SiC crystals in the vacuum ultraviolet.
Photoelectric yield data on n- and p-type silicon carbide crystals in vacuum UV
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Photoelectric yield data on n- and p-type silicon carbide crystals in vacuum UV
Modified three-step process controls the concentration of lithium diffused as a dopant into the base region of a diffused n-on-p silicon solar cell wafer. Part of the surface layer of the base region of the p-type silicon containing the diffused dopant is removed, prior to redistributing the remaining portion of the dopant into the bulk of the wafer.
Subthreshold electron irradiation effects on surface recombination properties of n- and p-type germanium and silicon crystals
Proton damage to n and p-type silicon crystals as function of proton energy using hall effect
Hole-optical-phonon interaction in degenerate p-type Si deduced from tunneling measurements
Epitaxial growth of n-type layers of gallium antimonide from liquid phase on p-type substrates, discussing growing process applications and advantages
Temperature coefficients for resistivity of n- and p-type germanium and silicon near room temperature
Metal-nonmetal transition in n- and p-type Si from high magnetic field galvanometric measurements, noting abnormally large magnetoresistance accompanied by Hall coefficient increase
Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N junctions.
Fermi level in n- and p-type Ge after irradiation by 50 Mev electrons determined by temperature dependence of carrier concentration
Strong p-type conductivity of silicon doped with beryllium by thermal diffusion, giving electrical and optical measurements
Black body responsivity data of n-type and p-type silicon
N-type layer formation with ion implanted nitrogen or Sb in p-type alpha-SiC, evaluating electrical characteristics, discussing junction devices formed
Water content in vapor deposition atmosphere for forming n-type and p-type junctions of zinc doped gallium arsenide
Test results are presented for a nine couple (3 x 3 array) thermoelectric panel of hybrid thermocouples. In the hybrid couple, a hollow cylinder of p-type Si-Ge is used to encapsulate a segmented PbTe/Si-Ge n-leg. The hybrid couple is predicted to offer a 10- to 15-percent improvement in performance relative to all Si-Ge couples. The efficiency, output power, and internal resistance of the panel as well as the resistances of the individual hybrid couples are presented as a function of test time covering a period of more than 2600 hours. Initial test results indicated hybrid couple performance consistent with design predictions. Extraneous resistance ranged from 20 to 25% of the hybrid couple thermoelectric resistance.
This project focuses on the development of stimuli-responsive hybrid multifunctional materials. We place emphasis on the design, synthesis, structural characterization, evaluation of functional properties (electronic, thermal and optical) of several (1-x)Cu 2 Se/(x)WBGS hierarchical bulk composites between Cu 2 Se, a narrow band gap semiconductor (NBGS), with a range of wider band gap semiconductors (WBGS) such as CuMSe 2 (M = Al, Ga, In, Fe, Cr) and Cu 4 TiSe 4 . Cu2Se is a well-studied NBGS with excellent thermoelectric properties (high electrical conductivity, large thermopower, etc.) while CuMSe 2 and Cu 4 TiSe 4 are high performance solar absorber materials (large band gap, large absorption coefficient, etc.). Our primary objectives are (i) to demonstrate the ability to integrate dissimilar functional properties such as large optical absorption coefficient and high electronic conductivity, within (1-x)Cu 2 Se/(x)WBGS composite; and (ii) to establish the correlation between the hierarchical structural entanglement of Cu 2 Se with WBGS (CuMSe 2 or Cu 4 TiSe 4 ) phase, the interactions between native electronic defects within the coexisting phases in the resulting (1-x)Cu 2 Se/(x)WBGS bulk composites , and the impacts on their electronic conductivity, thermal transport and optical properties.
Oxide isolated islands of N and P type silicon semiconductors by epitaxial deposition and etching for complimentary MOS-FET devices
P- and n-type silicon spectral emissivity measured at several temperatures and wavelengths for carrier concentrations and direct current resistivities