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At least 109 records · Page 6

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NASA NTRS1993

Quantitative Mapping of Pore Fraction Variations in Silicon Nitride Using an Ultrasonic Contact Scan Technique

An ultrasonic scan procedure using the pulse-echo contact configuration was employed to obtain maps of pore fraction variations in sintered silicon nitride samples in terms of ultrasonic material properties. Ultrasonic velocity, attenuation coefficient, and reflection coefficient images were obtained simultaneously over a broad band of frequencies (e.g., 30 to 110 MHz) by using spectroscopic analysis. Liquid and membrane (dry) coupling techniques and longitudinal and shear-wave energies were used. The major results include the following: Ultrasonic velocity (longitudinal and shear wave) images revealed and correlated with the extent of average through-thickness pore fraction variations in the silicon nitride disks. Attenuation coefficient images revealed pore fraction nonuniformity due to the scattering that occurred at boundaries between regions of high and low pore fraction. Velocity and attenuation coefficient images were each nearly identical for machined and polished disks, making the method readily applicable to machined materials. Velocity images were similar for wet and membrane coupling. Maps of apparent Poisson's ratio constructed from longitudinal and shear-wave velocities quantified Poisson's ratio variations across a silicon nitride disk. Thermal wave images of a disk indicated transient thermal behavior variations that correlated with observed variations in pore fraction and velocity and attenuation coefficients.

Roth, Don J.↗

NASA NTRS1996

Infrared bolometers with silicon nitride micromesh absorbers

Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

Bock, J. J.↗

NASA NTRS1999

Low-Energy Sputtering Studies of Boron Nitride with Xenon Ions

Sputtering of boron nitride with xenon ions was investigated using secondary ion (SIMS) and secondary neutral (SNMS) mass spectrometry. The ions generated from the ion gun were incident on the target at an angle of 50' with respect to the surface'normal. The energy of ions ranged from 100 eV to 3 keV. A flood electron gun was used to neutralize the positive charge build-up on the target surface. The intensities of sputtered neutral and charged particles, including single atoms, molecules, and clusters, were measured as a function of ion energy. Positive SIMS spectra were dominated by the two boron isotopes whereas BN- and B- were the two major constituents of the negative SIMS spectra. Nitrogen could be detected only in the SNMS spectra. The intensity-energy curves of the sputtered particles were similar in shape. The knees in P-SIMS and SNMS intensity-energy curves appear at around I keV which is significantly higher that 100 to 200 eV energy range at which knees appear in the sputtering of medium and heavy elements by ions of argon and xenon. This difference in the position of the sputter yield knee between boron nitride and heavier targets is due to the reduced ion energy differences. The isotopic composition of secondary ions of boron were measured by bombarding boron nitride with xenon ions at energies ranging from 100 eV to 1.5 keV using a quadrupole mass spectrometer. An ion gun was used to generate the ion beam. A flood electron gun was used to neutralize the positive charge buildup on the target surface. The secondary ion flux was found to be enriched in heavy isotopes at lower incident ion energies. The heavy isotope enrichment was observed to decrease with increasing primary ion energy. Beyond 350 eV, light isotopes were sputtered preferentially with the enrichment increasing to an asymptotic value of 1.27 at 1.5 keV. The trend is similar to that of the isotopic enrichment observed earlier when copper was sputtered with xenon ions in the same energy range.

Ray, P. K.↗

NASA NTRS2003

Foreign Object Damage in Disks of Two Gas-turbine-grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

Foreign object damage (FOD) behavior of two commercial gas-turbine-grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through postimpact strength testing of disks impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (k(sub Ic)). The critical impact velocity V(sub c) for which the corresponding postimpact strength was the lowest was V(sub c) approximately equal to 440 and 300 m/s AS800 and SN282, respectively. A unique lower strength regime was typified for both silicon nitrides depending on impact velocity and was attributed to significant radial cracking. The damage generated by projectile impact was typically in the form of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike the thick (4 millimeters) flexure bar specimens used in our previous studies, the thin (2 millimeter) disk target specimen exhibited a unique back-side radial cracking on the reverse side just beneath the impact sites at and above impact velocities of 160 meters per second for SN282 and 220 meters per second AS800.

Choi, Sung R.↗

NASA NTRS2003

Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

Choi, Sung R.↗

NASA NTRS2003

Silicon Carbide Fiber-Reinforced Silicon Nitride Composites

The fabrication and thermo-mechanical properties of SiC monofilament- and SiC fiber tow-reinforced reaction-bonded silicon nitride matrix composites (SiC/RBSN) and fully dense SiC monofilament-reinforced silicon nitride matrix composites (SiC/Si3N4) have been reviewed. The SiC/RBSN composites display high strength and toughness, and low thermal conductivity in the as-fabricated condition, but are susceptible to internal oxidation and mechanical property degradation in the intermediate temperature range from 400 to 1100 C. The internal oxidation problem can be avoided by applying functionally graded oxidation resistant coatings on external surfaces of the composite. On the other hand, the fully dense SiC/SiC3N4 composites fabricated by using SiC monofilaments and pressure assisted sintering methods display moderate strength and limited strain capability beyond matrix cracking stress. Advantages, disadvantages, and potential applications of SiC fiber-reinforced silicon nitride matrix composites fabricated using various fiber types and processing methods are discussed.

Bhatt, Ramakrishna T.↗

NASA NTRS2004

Foreign Object Damage in Flexure Bars of Two Gas-Turbine Grade Silicon Nitrides

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through strength testing of flexure test specimens impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 220 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub lc)). The use of an additional equiaxed, fine-grained silicon nitride (NC132) showed that fracture toughness was a key material parameter affecting FOD resistance. The observed damages generated by projectile impact were typically in the forms of well- or ill-developed ring and cone cracks with little presence of radial cracks.

Choi, Sung R.↗

NASA NTRS2020

Effects of Texture and Silica Content on Crack Growth in Boron Nitrides

Boron nitride is used in applications such as crucibles for melting and casting glasses and metals, insulators for furnaces, molds for hot pressing, and neutron absorbers. Historically, various grades of hot pressed hexagonal boron nitride (BN) have been used. This study investigates the fracture toughness and slow crack growth parameters of several commercially available BN grades. Prior work revealed that some grades of BN absorb water and change strength, thus presenting a philosophical conundrum on crack growth test methods. The grades selected for this study are of interest because their available billet size is sufficient for large components, or because they have heritage in specific applications. Ultimately, the data will be used to perform material selection, system design and reliability analyses of components of interest. Boron nitrides exhibit limited slow crack growth in humidity, with an orientation dependence due to crystallographic texture: orientations with van der Waal bonds are insensitive to water whereas those with covalent bonds are sensitive. Fracture toughness is low, around that of glass, and is also a function of orientation (bond type), with fracture occurring more readily along van der Waal bonds between hexagonal BN platelets than at covalent bonds across platelets. Silica additions toughen BN, but increase slow crack growth susceptibility.

Salem, Jonathan A.↗

NASA NTRS2022

Ab initio Screening of Refractory Nitrides and Carbides for High Temperature Hydrogen Permeation Barriers

Density functional theory was used to screen eleven refractory materials – two pure metals, six nitrides, and three carbides–as high-temperature hydrogen permeation barriers to prevent hydrogen embrittlement. Activation energies were calculated for atomic hydrogen (H) diffusion into the first subsurface layer from the lowest energy surface of the high-temperature phase of each candidate material. The candidate barrier materials with the highest activation energies are h-BN, c-BN, HfN, and ZrN with predicted barriers of 3.25 eV, 3.23 eV, 3.14 eV, and 2.76 eV, respectively. Strain energies, Bader charges, and density of states were calculated for the diffusing H at the relaxed initial state and the transition state to provide insight into contributing factors to high energy barriers. The diffusing H atom in materials with the highest predicted barriers are protic. In addition, interstitial H atoms induce mid-gap states in the density of states of both BN polymorphs. The nitrogen retention of each nitride material at high temperatures was predicted using nitrogen vacancy formation energies with respect to gaseous nitrogen. Experimental evaluation of nitrogen retention in h-BN, ZrN, and TiN confirmed their resistance to nitrogen loss at 1773 K. However, of these nitrides, TiN is predicted to be the least stable. This work identifies multiple promising materials that are predicted to be effective hydrogen barriers at high temperatures and that are stable at temperatures above 2700 K, with BN predicted to perform best.

Density Functional Theory (DFT)↗

NASA NTRS2025

The Shape Effect: Influence of 1D and 2D Boron Nitride Nanostructures on the Radiation Shielding, Thermal, and Damping Properties of High-Temperature Epoxy Composites

In space exploration, lightweight multifunctional materials capable of shielding neutron radiation, dissipating heat, and providing damping are essential. Polymer composites reinforced with boron nitride (BN) nanomaterials—specifically one-dimensional boron nitride nanotubes (BNNTs) and two-dimensional boron nitride nanoplatelets (BNNPs)—offer promising solutions. This study investigates how BN nanomaterial morphology influences the performance of high-temperature (HT) epoxy composites. We developed ultralightweight, three-dimensional BN foams comprising 1D BNNTs, 2D BNNPs, and hybrid 1D BNNT/2D BNNP structures via freeze-drying, then infiltrated them with HT epoxy to form dense composites. The BNNT foam exhibited the highest neutron radiation shielding, with a mass absorption coefficient of 26.64 cm2 g −1 , outperforming the hybrid foam (18.18 cm 2 g −1 ) and the BNNP foam (11.12 cm 2 g −1 ). A similar trend was observed in the HT epoxy composites; incorporating these foams at least doubled the mass absorption coefficient compared to the neat polymer. In terms of thermal conductivity, the BNNT/BNNP foam-epoxy composite achieved the highest value of 0.34 W m −1 K −1 , a 2.13-fold increase over neat HT epoxy. The BNNT/BNNP foam-epoxy composites also improved by 1.88 and 1.75 times, respectively. Mechanical testing revealed that BNNP foams withstood the highest loads during nanoindentation (3.53 kN), followed by BNNT/BNNP foams (1.93 kN) and BNNT foams (1.56 kN). All BN foam-epoxy composites exhibited enhanced damping properties, with tan δ increasing by at least 30 % compared to neat HT epoxy. These findings elucidate the impact of BN nanomaterial morphology on the multifunctional performance of HT epoxy composites, offering insights for developing high-performance, tailorable materials for demanding environments.

Kazue Orikasa↗

NASA NTRS2019

Slow Crack Growth of Boron Nitrides for Electric Propulsion Components

The Deep Space Gateway requires thruster systems to maintain spatial position. One control system being considered involves Hall thrusters. Historically, Hall thruster discharge channels have used several grades of hot-pressed hexagonal boron nitride. This study compliments data presented at ICACC (International Conference and Expo on Advanced Ceramics and Composites) 2018 and investigates the fracture toughness and slow crack growth parameters of several commercially available boron nitride grades including HP, M, M26, and Shapal Hi-M. The prior work revealed that some grades of BN absorb water and change strength thus presenting a philosophical conundrum on crack growth test methods. Advantages of different test methods will be discussed. The grades selected for this study are of interest because their available billet size is sufficient for Hall thruster discharge channels, or because they have heritage in Hall thruster applications. Ultimately, the data will be used to perform material selection, system design and reliability analyses.

Ceramics↗

NASA NTRSDate not supplied

Fabrication of Extruded Polyphenylsulfone – Boron Nitride Composite Tapes

Polyphenylsulfone (PPSU) is a high-temperature, chemically resistant thermoplastic with high impact resistance that is often used in interior aircraft cabin components, medical devices, and membranes. The aforementioned properties have led to interest investigating PPSU’s compatibility with hexagonal boron nitride (hBN) platelets as a thermally conductive, electrical composite insulator for high power-density electric machines. Preliminary trials extruding PPSU-hBN composite tapes showed promising dielectric properties and higher thermal conductivity as a function of hBN concentration compared to their neat analog. On the other hand, only few studies have reported on the extrusion process and resulting thermo-mechanical properties for PPSU and its composites made with chopped fiber reinforcement or fillers, none of which containing boron nitride filler. Prospects may exist for this type of material to be incorporated into extrusion-based additive manufacturing techniques to print other composites bearing unique properties useful for aerospace. Loading levels with up to approximately 23 wt% were achieved using micro-size BN platelets without observing any significant affects to PPSU’s glass-transition temperature. This work includes a description of the rheological properties of PPSU, the extrusion parameters for mixing and compounding the PPSU-hBN composite tapes, and the thermal and thermo-mechanical properties of PPSU-hBN composites.

polyphenylsulfone↗

NASA NTRS1965

Boron nitride housing cools transistors

Boron nitride ceramic heat sink cools transistors in r-f transmitter and receiver circuits. Heat dissipated by the transistor is conducted by the boron nitride housing to the metal chassis on which it is mounted.

Source record↗

NASA NTRS1971

A study of nitride devices for computer memory applications

Metal-nitride-oxide-silicon /MNOS/ capacitors act like metal-nitride-silicon /MNS/ capacitors with extra interface where sheet of charge can be stored in slow states. Flatband voltage shifts over a wide range by adjusting store charge density.

Raburn, W. D.↗

NASA NTRS1972

Aluminum nitride insulating films for MOSFET devices

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

Lewicki, G. W.↗

NASA NTRS1971

Effects of ultraviolet radiation on lattice imperfections in pyrolytic boron nitride.

Pyrolitic boron nitride was exposed to 310 equivalent sun hours of ultraviolet radiation in a space environment simulator with the objective to evaluate its applicability as a pigment for a thermal control coating and to identify radiation damage using X-ray diffraction techniques. Lattice parameter comparisons show a definite increase in lattice imperfections in the crystal structure resulting from the ultraviolet irradiation. This sensitivity to radiation damage makes pyrolitic boron nitride unsuitable as a pigment for thermal control coating.

Buckley, J. D.↗

NASA NTRS1975

Silicon nitride used as a rolling-element bearing material

Rolling-element fatigue tests were conducted with hot-pressed silicon nitride to determine its ability to withstand concentrated contacts in rolling-element bearings. If hot-pressed silicon nitride is used for both balls and races, attention must be paid to fitting both shaft and bearing housing.

Parker, R. J.↗

NASA NTRS1978

The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres

The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

Fischer, W. A.↗