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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Novel Techniques for Millimeter-Wave Packages

A new millimeter-wave package architecture with supporting electrical, mechanical and material science experiment and analysis is presented. This package is well suited for discrete devices, monolithic microwave integrated circuits (MMIC's) and multichip module (MCM) applications. It has low-loss wide-band RF transitions which are necessary to overcome manufacturing tolerances leading to lower per unit cost Potential applications of this new packaging architecture which go beyond the standard requirements of device protection include integration of antennas, compatibility to photonic networks and direct transitions to waveguide systems. Techniques for electromagnetic analysis, thermal control and hermetic sealing were explored. Three dimensional electromagnetic analysis was performed using a finite difference time-domain (FDTD) algorithm and experimentally verified for millimeter-wave package input and output transitions. New multi-material system concepts (AlN, Cu, and diamond thin films) which allow excellent surface finishes to be achieved with enhanced thermal management have been investigated. A new approach utilizing block copolymer coatings was employed to hermetically seal packages which met MIL STD-883.

Herman, Martin I.↗
NASA NTRS1993

Optimization of energy transfer in microwave electrothermal thrusters

Results are presented from preliminary tests conducted to evaluate the performance of a prototype microwave electrothermal thruster. The primary component of the device is a microwave resonant cavity. The device produces stable axial plasmas within a pressurized section of the cavity with the plasma positioned in the inlet region of the nozzle. Plasma stability is enhanced by axial power coupling, an optimal distribution of electric power density within the cavity, and a propellant gas flow which has a large vortical velocity component. The thruster has been operated with a number of propellant gases: helium, nitrogen, ammonia, and hydrogen. Plasmas can be formed in a reliable manner at cavity pressures of 1 kPa and incident power levels ranging from 50 W to 350 W, depending on the gas used, and can be operated at pressures up to 300 kPa at power levels up to 2200 W. Ideal performance results of vacuum Isp and thermal efficiency vs. specific power are presented for each gas. Representative results of this preliminary work are: He - Isp = 625 s, eta-thermal = 90 percent; N2 - Isp = 270 s, eta-thermal = 41 percent; NH3 - Isp = 475 s, eta-thermal= 55 percent; H2 - Isp = 1040 s, eta-thermal = 53 percent.

Sullivan, D. J.↗
NASA NTRS1971

NASA multidisciplinary research grant

Research is discussed in the multidisciplinary areas of space and planetary science; materials and radiation; systems, instrumentation, and structures; and technology and man. Highlights are identified as an alpha-recoil track method of archeological dating; infrared astronomical telescope; reaction rates data, semiconductor radiation detectors, and analysis of time-dependent systems; Gunn effect devices for microwave generation and detection, mode-locked lasers, and radiation theory; and the application of a satellite communication system to educational development. Detectors to be flown on Apollo 16 to measure heavy particle flux in the solar wind and to be part of the HEAO-A experiment on extremely heavy nuclei in cosmic rays were developed. The impact of the multidisciplinary research on university activities is described, and individual departmental reports are included.

Source record↗
NASA NTRS1980

Low-cost, lightweight RF transfer switch

Low cost miniature DPDT "half-size-crystal-can" relay serves as RF transfer switch for 1.0-W S-band signals. Switch can be used in miniature communication equipment operations at vhf-to-microwave frequencies. Device presents principal gains over conventional RF switches on space saving, and weight and cost reduction.

Olsson, D. L.↗
NASA NTRS1982

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

Cory, B. J.↗
NASA NTRS1986

A bibliography of electrothermal thruster technology, 1984

Electrothermal propulsion concepts are briefly discussed as an introduction to a bibliography and author index. Nearly 700 citations are given for resistojets, thermal arcjets, pulsed electrothermal thrusters, microwave heated devices, solar thermal thrusters, and laser thermal thrusters.

Sovey, J. S.↗
NASA NTRS1991

New materials and techniques for improved mm wave devices

Current research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.

Alterovitz, Samuel A.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗
NASA NTRS2014

Properties of Superconducting Mo, Mo2n and Trilayer Mo2n-Mo-Mo2n Thin Films

We present measurements of the properties of thin film superconducting Mo, Mo2N and Mo2N/Mo/Mo2N trilayers of interest for microwave kinetic inductance detector (MKID) applications. Using microwave resonator devices, we investigate the transition temperature, energy gaps, kinetic inductance, and internal quality factors of these materials. We present an Usadel-based interpretation of the trilayer transition temperature as a function of trilayer thicknesses, and a 2-gap interpretation to understand the change in kinetic inductance and internal resonance quality factor (Q) as a function of temperature.

Superconducting↗
NASA NTRS2017

Development of 3-5 THz Harmonic Mixer

There is a high need for 2 THz room temperaturedirect-detectorsharmonic-mixers to characterize THz opticalsources, phase lock THz-QCLs as LO sources for multi-pixelreceivers, and realize absolute frequency calibration sources forapplications in astrophysics, earth science, and remote sensing.Thus, we have developed a WM-52 (WR0.22) harmonic mixerfor the 3-5 THz operation. The design, fabrication and assemblyof the THz mixer are discussed.

Microwave Devices↗
NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗
NASA NTRS1979

Velocity overshoot effect on a short-gate microwave MESFET

The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.

Wang, Y.-C.↗
NASA NTRS2020

Nonlinear Microwave Interactions with Voltage-Gated Graphene Devices

In this dissertation, methods of fabrication and testing micro- and nano-scaled thermoelectric microwave power detectors based on graphene are explored. Initial detectors show sensitivities of 0.87 mV/mW and each chapter herein describes the iterations and improvements made to the devices. In the end, detectors have shown sensitivities of up to 60.25 mV/mW when accounting for the reflection coefficient of the device, over a 690% increase in sensitivity. Commercially-available detectors that feature zero DC power consumption and operate over similar frequency ranges typically over a power detection sensitivity of 500 mV/mW. However, state-of-the-art thermoelectric detectors based on CMOS and MEMS technologies over power detection sensitivities that are typically lower than 0.4 mV/mW. Unoptimized graphene based detectors have been shown to outperform CMOS and MEMS detectors. An outlook is provided on further optimizations that can be made to the devices.

Michael Robert Gasper↗
NASA NTRS1991

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Pavlidis, Dimitris↗