A program of research and development of low input voltage conversion and regulation Final report, 14 Jun. 1965 - 14 Jul. 1966
Techniques and hardware for low input voltage converter-regulator system
VOLTAGE REGULATOR↗
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Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration
Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.
DeGregorio, Kelly↗
Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells
The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.
Minnucci, J. A.↗
A program of research and development of low input voltage conversion and regulation First quarterly report, 14 Jun. - 14 Sep. 1965
Switching and circuit studies for development of low input voltage converter and regulator
CONVERTER↗
Power Management And Distribution For System on a Chip for Space Applications
High-voltage transistor in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip.
mixed↗
High-Voltage, Low-Power BNC Feedthrough Terminator
This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.
Bearden, Douglas↗
Design and development of a high power, low saturation voltage, multi-chip silicon switching transistor Final progress report, period ending 19 Feb. 1970
Mechanical design modifications, processing, and test data for high power, low saturation voltage, multi-chip silicon switching transistor
Ferree, H. E.↗
Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode
Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.
bandwidth↗
Liquid switch is remotely operated by low dc voltage
A liquid switch which does not depend on any mechanical, gravitational, or inertial actuation is developed for use in space environments. It may be remotely operated on low dc voltage.
Moore, E. T.↗
High voltage battery cell scanner development
Battery cell voltage scanners have been previously used in low voltage spacecraft applications. In connection with future missions involving an employment of high-power high voltage power subsystems and/or autonomous power subsystem management for unattended operation, it will be necessary to utilize battery cell voltage scanners to provide battery cell voltage information for early detection of impending battery cell degradation/failures. In preparation for such missions, a novel battery cell voltage scanner design has been developed. The novel design makes use of low voltage circuit modules which can be applied to high voltage batteries in a building block fashion. A description is presented of the design concept and test results of the high voltage battery cell scanner, and its operation with an autonomously managed power subsystem is discussed.
Lepisto, J. W.↗
Dc to ac converter operates efficiently at low input voltages
Self-oscillating dc to ac converter with transistor switching to produce a square wave output is used for low and high voltage power sources. The converter has a high efficiency throughout a wide range of loads.
Source record↗
Arc lamp power supply using a voltage multiplier
A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.
Leighty, Bradley D.↗
Voltage breakdown at low air pressures.
Voltage breakdown in low pressure regions and resulting electrical corona
Bunker, E. R., Jr.↗
Stable low noise voltage source
Hum and noise on power sources can have a significant effect on system noise. Filtering to achieve low hum and noise is accomplished at low current levels. The diode regulator circuit is described which is ideal for this type of filtering. Hum and noise rejection is achieved with good output voltage stability in a small, low-cost, reliable circuit.
Lutes, G. F.↗
WSTF electrical arc projects
The objectives of these projects include the following: validate method used to screen wire insulation with arc tracking characteristics; determine damage resistance to arc as a function of source voltage and insulation thickness; investigate propagation characteristics of Kapton at low voltages; and investigate pyrolytic properties of polyimide insulated (Kapton) wire for low voltage (less than 35 VDC) applications. Supporting diagrams and tables are presented.
Linley, Larry↗
A nickel-cadmium battery reconditioning circuit
The circuit presented is simple and small enough to be included in a typical battery charge/power control assembly, yet provides the advantage of a complete ground-type battery reconditioning discharge. Test results on the circuit when used to recondition two 24 cell, 20 A-h nickel-cadmium batteries are given. These results show that a battery reconditioned with this circuit returns to greater than 90 percent of its original capacity (greater than nameplate capacity) and follows a typical new battery degradation curve even after over 20,000 simulated orbital cycles for a 4 year period. Applications of the circuit are considered along with recommendations relative to its use. Its application in low voltage (22 to 36 Vdc) power systems and in high voltage (100 to 150 Vdc) power systems is discussed. The implications are that the high voltage systems have a greater need for battery reconditioning than their low voltage counterparts, and that using these circuit techniques, the expected life of a battery in low Earth orbit can be up to 5 years.
Lanier, R.↗
2014 NEPP Tasks Update for Ceramic and Tantalum Capacitors
Presentation describes recent development in research on MnO2, wet, and polymer tantalum capacitors. Low-voltage failures in multilayer ceramic capacitors and techniques to reveal precious metal electrode (PME) and base metal electrode (BME) capacitors with cracks are discussed. A voltage breakdown technique is suggested to select high quality low-voltage BME ceramic capacitors.
ceramic capacitors↗
Silicon switching transistor with high power and low saturation voltage
Assembly of two individually encapsulated silicon-chip transistors produces silicon power-transistor that has low electrical resistance and low thermal impedance. Electrical resistance and thermal impedance are low because of short lead lengths, and external contact surfaces are plated to reduce resistance at interfaces.
Stonebraker, E.↗