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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Organic light-emitting diodes with fluorescent and phosphorescent emitters

A light emitting device includes a first electrode, a hole transporting layer in contact with the first electrode, a second electrode, an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer. The emissive layer includes a phosphorescent emitter, a fluorescent emitter, and a host, and the phosphorescent emitter harvests electrogenerated excitons and transfers energy to the fluorescent emitter.

Li, Jian↗
DOE OSTI2023

Suppressing phase disproportionation in quasi-2D perovskite light-emitting diodes

Electroluminescence efficiencies and stabilities of quasi-two-dimensional halide perovskites are restricted by the formation of multiple-quantum-well structures with broad and uncontrollable phase distributions. Here, we report a ligand design strategy to substantially suppress diffusion-limited phase disproportionation, thereby enabling better phase control. We demonstrate that extending the π-conjugation length and increasing the cross-sectional area of the ligand enables perovskite thin films with dramatically suppressed ion transport, narrowed phase distributions, reduced defect densities, and enhanced radiative recombination efficiencies. Consequently, we achieved efficient and stable deep-red light-emitting diodes with a peak external quantum efficiency of 26.3% (average 22.9% among 70 devices and cross-checked) and a half-life of ~220 and 2.8 h under a constant current density of 0.1 and 12 mA/cm 2 , respectively. Our devices also exhibit wide wavelength tunability and improved spectral and phase stability compared with existing perovskite light-emitting diodes. These discoveries provide critical insights into the molecular design and crystallization kinetics of low-dimensional perovskite semiconductors for light-emitting devices.

14 SOLAR ENERGY↗
DOE OSTI2024

Roadmap on perovskite light-emitting diodes

Abstract In recent years, the field of metal-halide perovskite emitters has rapidly emerged as a new community in solid-state lighting. Their exceptional optoelectronic properties have contributed to the rapid rise in external quantum efficiencies (EQEs) in perovskite light-emitting diodes (PeLEDs) from <1% (in 2014) to over 30% (in 2023) across a wide range of wavelengths. However, several challenges still hinder their commercialization, including the relatively low EQEs of blue/white devices, limited EQEs in large-area devices, poor device stability, as well as the toxicity of the easily accessible lead components and the solvents used in the synthesis and processing of PeLEDs. This roadmap addresses the current and future challenges in PeLEDs across fundamental and applied research areas, by sharing the community’s perspectives. This work will provide the field with practical guidelines to advance PeLED development and facilitate more rapid commercialization.

14 SOLAR ENERGY↗
DOE OSTI2020

Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

At present, electric lighting accounts for ~15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Here, halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m –2 at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm –2 . Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the α phase of CsPbI 3 , α to δ charge transfer and α–δ balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Overcoming Degradation Pathways to Achieve Stable Blue Perovskite Light-Emitting Diodes

Mixed halide (Br/Cl) perovskite nanocrystals (NCs) that represent an advanced blue emitter commonly suffer from spectral instability and poor lifespan; notably, the lack of understanding of the failure mechanisms of these devices has restricted the future progress. Here, we determine that the degradation of CsPbBr x Cl 3– x NCs containing blue light-emitting diodes (LEDs) is due to the combination of two effects. Cl – drift among adjoining NCs under an electric field is found to induce a Cl-deficient material region in multiple NC layers, which dominates the unstable electroluminescence and causes fast degradation in the corresponding devices. In comparison, the monolayer NC devices that feature restricted anion drift pathways exhibit better operational stability; however, excess hole injection is demonstrated to induce irreversible chlorine loss in NCs. Such a process that largely arises from electrochemical oxidation of Cl – initiates a mild device failure in operation of tens of minutes. Through revealing these mechanisms, we modulate the devices’ construction and operational conditions to achieve a longer lifespan.

14 SOLAR ENERGY↗
DOE OSTI2024

Exciton Dynamics in Layered Halide Perovskite Light‐Emitting Diodes

Abstract Layered halide perovskites have garnered significant interest due to their exceptional optoelectronic properties and great promises in light‐emitting applications. Achieving high‐performance perovskite light‐emitting diodes (PeLEDs) requires a deep understanding of exciton dynamics in these materials. This review begins with a fundamental overview of the structural and photophysical properties of layered halide perovskites, then delves into the importance of dimensionality control and cascade energy transfer in quasi‐2D PeLEDs. In the second half of the review, more complex exciton dynamics, such as multiexciton processes and triplet exciton dynamics, from the perspective of LEDs are explored. Through this comprehensive review, an in‐depth understanding of the critical aspects of exciton dynamics in layered halide perovskites and their impacts on future research and technological advancements for layered halide PeLEDs is provided.

Baek, Sung‐Doo↗
DOE OSTI2023

Modeling the Charge and Exciton Distributions in Phosphorescent White Organic Light-Emitting Diodes

A comprehensive numerical model is developed to quantitatively analyze the charge and exciton distributions in phosphorescent white organic light emitting diodes (WOLEDs). The model encompasses bipolar charge drift-diffusion transport with doping-dependent charge mobilities, field-dependent charge hopping across multiple interfaces, exciton generation, diffusion, energy transfer, radiative decay, and non-radiative exciton annihilation. The model is validated by direct measurement of the exciton distribution in monochromatic phosphorescent OLEDs. It is then applied to complex, multilayer WOLEDs where it is used to accurately predict their intensity and current-dependent spectral shifts. The magnitudes of different exciton loss channels in WOLEDs are calculated and quantitatively compared. This model provides an alternative for the many experimental iterations commonly used to optimize the color balance of complex OLEDs. In this context, the model inspired the addition of a hole blocking layer in the WOLED to balance the charge conduction and reduce spectral shifts – a design that is verified by experiment.

42 ENGINEERING↗
NASA NTRS1996

Infrared light-emitting diode radiation causes gravitropic and morphological effects in dark-grown oat seedlings

Oat (Avena sativa cv Seger) seedlings were irradiated with IR light-emitting diode (LED) radiation passed through a visible-light-blocking filter. Infrared LED irradiated seedlings exhibited differences in growth and gravitropic response when compared to seedlings grown in darkness at the same temperature. Thus, the oat seedlings in this study were able to detect IR LED radiation. These findings call into question the use of IR LED as a safe-light for some photosensitive plant response experiments. These findings also expand the defined range of wavelengths involved in radiation-gravity (light-gravity) interactions to include wavelengths in the IR region of the spectrum.

NASA Center KSC↗
DOE OSTI2025

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

Electrical injection of spin-polarized carriers into semiconductors enables circularly-polarized emission from spin-polarized light-emitting diodes (spin-LEDs). The incredible level of tunability of magnetic and electronic properties in colloidal nanocrystals offers unprecedented opportunities for the modulation of polarization of light in solution-processed spin-LEDs based on magnetic nanoparticles unlike epitaxially grown spin-LEDs restricted by a very limited range of materials for their exploitation, and solution-processed spin-LEDs based on chiral molecules, which do not allow the modulation of polarization in general. Here, it is shown that electrical injection of spin-polarized electrons from magnetic Fe 3 O 4 nanoparticles into CdSe/CdZnS core/shell colloidal quantum wells (CQWs) in solution-processed LEDs that allows for polarization modulation of electroluminescence. In this structure, a monolayer of face-down oriented CQWs is deposited as an active layer to avoid polarization losses due to the hopping of the electrons between the CQWs before the radiative recombination process. In this solution-processed spin-LED, the circular polarization reaches 4.5% at 3 K and survives up to 100 K. A net circular polarization is observed at zero magnetic field up to 100 K because of the remnant magnetization of the Fe 3 O 4 nanoparticles. This new colloidal spin-LED architecture presents significant prospects for future solution-processed advanced opto-spintronic devices.

circularly polarized electroluminescence↗
DOE OSTI2022

2,4–dinitroanisole transformation during advanced oxidation with ultraviolet light emitting diodes and hydrogen peroxide

This study investigated the kinetics and reaction mechanisms associated with advanced oxidation of 2,4-dinitroanisole (DNAN) with light emitting diodes (LEDs) in the UV/H2O2 process. The pseudo first-order reaction rate constants for DNAN oxidation depended on the H 2 O 2 /DNAN molar ratio and were between 0.017 and 0.026 min –1 . Hydroxyl radical scavenging was strongly implicated by the experimental results. High mass spectrophotometric chromatograms showed the presence of several by-products, including three with ecotoxicity that is greater than that of DNAN. Transformation pathways were analysed using Density Functional Theory (DFT), which helped to predict the presence of experimentally detected DNAN by-products by considering Mulliken charges. Furthermore, this study is the first to elucidate DNAN transformation mechanisms using both experimental studies and computational chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1997

Proton Degradation of Light-Emitting Diodes

The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers. However, a variety of LED technologies can be used in optocouplers and their sensitivity to proton displacement damage varies by about two orders of magnitude. Optocouplers are very simple hybrid devices, and the type of LED can be readily changed by the manufacturers with little cost impact. many optocoupler manufacturers purchase LEDs from outside sources with little knowledge or control of the manufacturing process used for the LED, leading to the possibility of very dramatic differences in radiation response (JPL has observed such differences for one type of optocoupler that is used in a hybrid power converter).

Johnston, A. H.↗
DOE OSTI2024

Effect of molecular permanent dipole moment on guest aggregation and exciton quenching in phosphorescent organic light emitting diodes

This study explores the effect of molecular permanent dipole moment (PDM) on aggregation of guest molecules in phosphorescent host–guest organic light-emitting diodes (OLEDs). Through a combination of photoluminescence measurements, high-angle annular dark-field scanning transmission electron microscopy analysis, and an Ising model based physical vapor-deposition simulation, we show that higher PDM of tris[2-phenylpyridinato-C2,N]iridium(III) guest can actually lead to a reduced aggregation relative to tris[bis[2-(2-pyridinyl-N)phenyl-C] (acetylacetonato)iridium(III) when doped into a non-polar host 1,3,5-tris(carbazol-9-yl)benzene. This study further explores the effect of host polarity by using a polar host 3′,5′-di(carbazol-9-yl)-[1,1′-biphenyl]-3,5-dicarbonitrile, and it is shown that the polar host leads to reduced guest aggregation. In conclusion, this study provides a comprehensive understanding of the impact of molecular PDM on OLED material efficiency and stability, providing insights for optimizing phosphorescent OLED materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

42 ENGINEERING↗
NASA NTRS2024

Thermal Inspection of Low Emissivity Surfaces Using a Pulsed Light Emitting Diodes (PLED) Heat Source

Thermal inspections of a structure typically utilize a flash or quartz lamp heat source located on the same side of an infrared camera. The heat source provides light energy for heating while the infrared camera measures the surface transient temperature response. The inspection can be difficult for low emissivity surfaces for several reasons. First, the high intensity light can reflect off the surface and cause “burn-in” to the camera’s detector. The “burn-in” can take time for the sensors to recover and potentially damage the detector. Secondly, the heat source after pulsing, has a transient cool down component. The cool down component can be reflected and therefore superimposed over the structure’s thermal response which can cause an error (false defect indications) in the inspection. Lastly, the heat source is spectrally broad and therefore while heating, infrared components of the heat source can produce non-uniformity in the measured temperature field. Typically for the inspection of reflective surfaces, paint or other emissivity enhancing coatings are applied before inspection. In this paper, a pulsed light emitting diodes (PLED) heat source is used. The PLED heat source is spectrally narrow, contained within the visible band, and therefore not detectable by the infrared camera. The PLED heat source is configured to reduce any transient cool down components that could produce false defect indications. The PLED thermal inspections are compared to commercially available flash thermography inspections on unpainted aluminum samples with simulated corrosion and additively manufactured Ti-6AL-4V metal specimens.

thermal nondestructive evaluation↗
NASA NTRS2024

Thermal Inspection of Low Emissivity Surfaces Using a Pulsed Light Emitting Diodes (PLED) Heat Source

Thermal inspections of a structure typically utilize a flash or quartz lamp heat source located on the same side of an infrared camera. The heat source provides light energy for heating while the infrared camera measures the surface transient temperature response. The inspection can be difficult for low emissivity surfaces for several reasons. First, the high intensity light can reflect off the surface and cause “burn-in” to the camera’s detector. The “burn-in” can take time for the sensors to recover and potentially damage the detector. Secondly, the heat source after pulsing, has a transient cool down component. The cool down component can be reflected and therefore superimposed over the structure’s thermal response which can cause an error (false defect indications) in the inspection. Lastly, the heat source is spectrally broad and therefore while heating, infrared components of the heat source can produce non-uniformity in the measured temperature field. Typically for the inspection of reflective surfaces, paint or other emissivity enhancing coatings are applied before inspection. In this paper, a pulsed light emitting diodes (PLED) heat source is used. The PLED heat source is spectrally narrow, contained within the visible band, and therefore not detectable by the infrared camera. The PLED heat source is configured to reduce any transient cool down components that could produce false defect indications. The PLED thermal inspections are compared to commercially available flash thermography inspections on unpainted aluminum samples with simulated corrosion and additively manufactured Ti-6AL-4V metal specimens.

thermal nondestructive evaluation↗
NASA NTRS1974

Changes in the performance characteristics of a GaAs near infrared light emitting diode when exposed to various current and thermal stresses

The changes that occurred in the optical and electrical characteristics of a near infrared, GaAs light emitting diode, when operated under various levels and combinations of current and thermal stresses are discussed. A total of forty parts were operated for two thousand hours under eight different sets of dc current and ambient temperature conditions. Degradation in the radiant optical power of these devices was thirty-four percent when operated at their rated current and an ambient temperature of 298K (25 C). Derating the current and/or the thermal stress reduced the degradation of this parameter in approximately a linear manner. All degraded devices behaved similarly, exhibiting rapid nonlinear degradation followed by a gradual linear degradation and finally a period of stable operation. An attempt was made to correlate initial device condition to degradation during stress testing, but met with little success.

Thomas, E. F., Jr.↗
DOE OSTI2025

Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)⁢N light-emitting diodes

Differential carrier lifetime (DCL) measurements were performed on c-plane In 𝑥 ⁢Ga 1−𝑥⁢ N/Ga⁢N single-quantum-well (QW) light-emitting diodes (LEDs) with varying indium-content QWs (x = 13.5%, 16%, 22%), emitting with violet, blue, and green wavelengths. The recombination lifetimes of LEDs were found to increase with increasing indium composition, resulting in increased carrier densities n measured by DCL. Extraction of the A coefficients, which are assumed to not vary with n, and of the effective B(n) and C(n) coefficients of the ABC model of the internal quantum efficiency (IQE) of QWs showed no significant changes in the A coefficient with increasing indium content [In] in the In 𝑥 ⁢Ga 1−𝑥 ⁢N QW, and a reduction in the B(n) and C(n) coefficients with increasing [In]. When looking at the Shockley-Read-Hall (SRH) recombination rate An, the radiative recombination rate B(n)𝑛 2 , and the Auger-Meitner (AM) recombination rate C(n)𝑛 3 , we observed that at any given n, the SRH rate is the same for the three [In] measured, while the radiative rate decreases (by up to approximately 9 times) and the AM rate decreases (by up to approximately 7 times) with increasing indium content. This shows that the larger reduction in radiative recombination rates relative to nonradiative recombination rates with increasing [In] is the largest contributor to the decreased quantum efficiencies of LEDs (the “green gap”) at any given n. While some of the reduction in the effective recombination coefficients B(n) and C(n) can be explained by the reduced wave-function overlaps of the QW with increasing indium content, the larger reduction of B(n) relative to C(n) motivates further study of the intrinsic recombination coefficients 𝐵 0 and 𝐶 0 of bulk In 𝑥 ⁢Ga 1−𝑥 ⁢N alloys and how they are related to the effective recombination coefficients B(n) and C(n) in QWs. The relative contributions of nonradiative recombination are enhanced at any given current density due to the sublinear relationship between the carrier density n and the current density. Thus, the solution to the green gap, up to any intrinsic limitations set by the indium content of the QW, from an IQE perspective, requires the design of long-wavelength (In,Ga)⁢N LEDs with improved wave-function overlaps that can operate with a lower carrier density at any given current density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1988

Al(0.3)Ga(0.7)As / Al(0.05)Ga(0.95)As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

Al(0.3)Ga(0.7)As/Al(0.05)Ga(0.95)As double-heterostructure light-emitting diodes (LEDs) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The edge-emitting LEDs had diode ideality factors of 1.54 at a forward-biased voltage higher than 0.9 V and external quantum efficiencies of 0.0033 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LEDs fabricated on the GaAs substrates by liquid phase epitaxy.

Sakai, Shiro↗