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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Novel Three-Dimensional Vertical Interconnect Technology for Microwave and RF Applications

In this paper, novel 3D interconnects suitable for applications in microwave and RF integrated circuit technology have been presented. The interconnect fabrication process and design details are presented. In addition, measured and numerically modeled results of the performance of the interconnects have been shown. The results indicate that the proposed technology has tremendous potential applications in integrated circuit technology. C,

Goverdhanam, Kavita↗
DOE OSTI2024

An MPMD approach coupling electromagnetic continuum mechanics approximations in ALEGRA

In this work, two complementary approximations for describing aspects of continuum electromagnetics in moving media are discussed: electroquasistatic and magnetoquasistatic. Each has been implemented in the finite element shock code ALEGRA for modeling dynamic electromechanical phenomena on typical engineering time scales, with fully integrated circuit coupling. The approximations can be obtained by consistent asymptotic balancing of Maxwell’s equations relative to timescales associated with magnetic diffusion, charge relaxation, and electromagnetic wave propagation. In ALEGRA, the electroquasistatic approximation is used for ferroelectric (FE) modeling, while the magnetoquasistatic approximation is used for magnetohydrodynamic (MHD) modeling. In this paper we introduce for the first time a detailed derivation of a useful quasi-steady “low-R m ” variant of the MHD approximation applicable for cases, such as with detonators, where the thermodynamic pressure arising from Joule heating dominates over magnetic forces. An additional purpose of this paper is to present a coupling mode using Multiple Program-Multiple Data (MPMD) message passing communication that allows the user to run 3D FE problems together with 2D and/or 3D MHD problems with the respective simulation domains coupled through a common circuit equation. The MPMD coupling capability is used here to model the dynamic coupling of a notional ferroelectric generator with an RP-87 exploding bridgewire detonator. The simulated bridgewire heats up and bursts under current generated by simulated depoling of the ferroelectric generator, as a demonstration of the MPMD capability.

42 ENGINEERING↗
NASA NTRS1987

The coupled dynamics of fluids and spacecraft in low gravity and low gravity fluid measurement

The very large mass fraction of liquids stored on broad current and future generation spacecraft has made critical the technologies of describing the fluid-spacecraft dynamics and measuring or gauging the fluid. Combined efforts in these areas are described, and preliminary results are presented. The coupled dynamics of fluids and spacecraft in low gravity study is characterizing the parametric behavior of fluid-spacecraft systems in which interaction between the fluid and spacecraft dynamics is encountered. Particular emphasis is given to the importance of nonlinear fluid free surface phenomena to the coupled dynamics. An experimental apparatus has been developed for demonstrating a coupled fluid-spacecraft system. In these experiments, slosh force signals are fed back to a model tank actuator through a tunable analog second order integration circuit. In this manner, the tank motion is coupled to the resulting slosh force. Results are being obtained in 1-g and in low-g (on the NASA KC-135) using dynamic systems nondimensionally identical except for the Bond numbers.

Hansman, R. John↗
NASA NTRS1996

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗
NASA NTRS2009

A Mathematical Model of a Simple Amplifier Using a Ferroelectric Transistor

This paper presents a mathematical model characterizing the behavior of a simple amplifier using a FeFET. The model is based on empirical data and incorporates several variables that affect the output, including frequency, load resistance, and gate-to-source voltage. Since the amplifier is the basis of many circuit configurations, a mathematical model that describes the behavior of a FeFET-based amplifier will help in the integration of FeFETs into many other circuits.

Sayyah, Rana↗
NASA NTRS1987

A technique for evaluating the application of the pin-level stuck-at fault model to VLSI circuits

Accurate fault models are required to conduct the experiments defined in validation methodologies for highly reliable fault-tolerant computers (e.g., computers with a probability of failure of 10 to the -9 for a 10-hour mission). Described is a technique by which a researcher can evaluate the capability of the pin-level stuck-at fault model to simulate true error behavior symptoms in very large scale integrated (VLSI) digital circuits. The technique is based on a statistical comparison of the error behavior resulting from faults applied at the pin-level of and internal to a VLSI circuit. As an example of an application of the technique, the error behavior of a microprocessor simulation subjected to internal stuck-at faults is compared with the error behavior which results from pin-level stuck-at faults. The error behavior is characterized by the time between errors and the duration of errors. Based on this example data, the pin-level stuck-at fault model is found to deliver less than ideal performance. However, with respect to the class of faults which cause a system crash, the pin-level, stuck-at fault model is found to provide a good modeling capability.

Palumbo, Daniel L.↗
DOE OSTI2025

Harnessing ionic complexity: A modeling approach for hierarchical ionic circuit design

Since the 1950s, soft ionic devices have evolved from individual components to an expanding library of sensors, actuators, signal transmitters, and processors. However, integrating these components into complex, multifunctional systems remains challenging due to the nonintuitive and nonlinear interactions between ionic elements. In this work, we address these fundamental challenges by developing a lumped element model that enables interrogation of the physics that governs ionic circuits, as well as rapid design and optimization. Our model captures features specific to ionic charge carriers, while preserving the hierarchical design flexibility and computational efficiency of traditional circuit modeling. We demonstrate that our model can not only fit individual device behavior but also accurately predict the behavior of larger circuits formed by combining those devices. Additionally, we show how our tool utilizes the intrinsic nonlinearities of ionic systems to enable extended functionality, revealing how factors such as ion enrichment, ion leakage, and polymer charge density influence performance. Lastly, we present a fully ionic power supply, sensor, control system, and actuator for a soft robot that adapts its motion in response to environmental salt, illustrating the tool’s potential to accelerate advancements in chemical sensing, biointerfacing, biomimetic systems, and adaptive materials.

42 ENGINEERING↗
DOE OSTI2024

Investigating resource-efficient neutron/gamma classification ML models targeting eFPGAs

There has been considerable interest and resulting progress in implementing machine learning (ML) models in hardware over the last several years from the particle and nuclear physics communities. A big driver has been the release of the Python package, hls4ml, which has enabled porting models specified and trained using Python ML libraries to register transfer level (RTL) code. So far, the primary end targets have been commercial field-programmable gate arrays (FPGAs) or synthesized custom blocks on application specific integrated circuits (ASICs). However, recent developments in open-source embedded FPGA (eFPGA) frameworks now provide an alternate, more flexible pathway for implementing ML models in hardware. These customized eFPGA fabrics can be integrated as part of an overall chip design. In general, the decision between a fully custom, eFPGA, or commercial FPGA ML implementation will depend on the details of the end-use application. In this work, we explored the parameter space for eFPGA implementations of fully-connected neural network (fcNN) and boosted decision tree (BDT) models using the task of neutron/gamma classification with a specific focus on resource efficiency. We used data collected using an AmBe sealed source incident on Stilbene, which was optically coupled to an OnSemi J-series silicon photomultiplier (SiPM) to generate training and test data for this study. We investigated relevant input features and the effects of bit-resolution and sampling rate as well as trade-offs in hyperparameters for both ML architectures while tracking total resource usage. The performance metric used to track model performance was the calculated neutron efficiency at a gamma leakage of 10 -3 . The results of the study will be used to aid the specification of an eFPGA fabric, which will be integrated as part of a test chip.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Xyce Case Study

With the elimination of underground nuclear testing and declining defense budgets, science-based stockpile stewardship requires increased reliance on high performance modeling and simulation of weapon systems. Today's weapon systems are comprised of various electrical components and systems. As a result, there is a need for tools that will allow the use of massively parallel modeling and simulation techniques on high performance computers in existing and future weapons' electrical systems models. The Xyce Parallel Electronic Simulator is a SPICE (Simulation Program with Integrated Circuit Emphasis)- compatible circuit simulator designed to run on large-scale parallel computing platforms, though it can also execute efficiently on a variety of architectures including single processor workstations. As a mature platform for large-scale parallel circuit simulation, Xyce supports standard capabilities available in commercial simulators, in addition to various devices and models specific to Sandia's needs. Specifically, Xyce aids in the design and verification of electrical and electronic circuits and systems prior to weapons' manufacturing and deployment.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
DOE OSTI2020

Xyce Case Study

With the elimination of underground nuclear testing and declining defense budgets, science-based stockpile stewardship requires increased reliance on high performance modeling and simulation of weapon systems. Today's weapon systems are comprised of various electrical components and systems. As a result, there is a need for tools that will allow the use of massively parallel modeling and simulation techniques on high performance computers in existing and future weapons' electrical systems models. The Xyce Parallel Electronic Simulator is a SPICE (Simulation Program with Integrated Circuit Emphasis)- compatible circuit simulator designed to run on large-scale parallel computing platforms, though it can also execute efficiently on a variety of architectures including single processor workstations. As a mature platform for large-scale parallel circuit simulation, Xyce supports standard capabilities available in commercial simulators, in addition to various devices and models specific to Sandia's needs. Specifically, Xyce aids in the design and verification of electrical and electronic circuits and systems prior to weapons' manufacturing and deployment.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
NASA NTRS1973

Variable Time Base Integrator Circuit for Buffet Signal Measurements

A measurement circuit to obtain buffet data from wind tunnel models wherein a signal proportional to the average RMS value of buffet data is produced for subsequent recording. Feedback means are employed to suppress the D.C. portion of signals developed by the strain gages during dynamic testing. Automatic recording of gain settings of amplifiers employed in the circuit is also provided.

Batts, Colossie N.↗
NASA NTRS1995

Flexible Multiplexed Surface Temperature Sensor

Unitary array of sensors measures temperatures at points distributed over designated area on surface. Useful in measuring surface temperatures of aerodynamic models and thermally controlled objects. Made of combination of integrated-circuit microchips and film circuitry. Temperature-sensing chips scanned at speeds approaching 10 kHz. Operating range minus 40 degrees C to 120 degrees C. Flexibility of array conforms to curved surfaces. Multiplexer eliminates numerous monitoring cables. Control of acquisition and recording of data effected by connecting array to microcomputers via suitable interface circuitry.

Daryabeigi, Kamran↗
NASA NTRS2001

Traveling-Wave Tube Amplifier Model to Predict High-Order Modulation Intersymbol Interference

Demands for increased data rates in satellite communications necessitate higher order modulation schemes, larger system bandwidth, and minimum distortion of the modulated signal as it is passed through the traveling wave tube amplifier (TWTA). One type of distortion that the TWTA contributes to is intersymbol interference (ISI), and this becomes particularly disruptive with wide-band, complex modulation schemes. It is suspected that in addition to the dispersion of the TWT, frequency dependent reflections due to mismatches within the TWT are a significant contributor to ISI. To experimentally investigate the effect of these mismatches within the physical TWT on ISI would be prohibitively expensive, as it would require manufacturing numerous amplifiers in addition to the acquisition of the required digital hardware. In an attempt to develop a more accurate model to correlate IS1 with the TWTA and the operational signal, a fully three-dimensional (3D), time-dependent, TWT interaction model has been developed using the electromagnetic particle-in-cell (PIC) code MAFIA (solution of Maxwell's equations by the Finite-Integration-Algorithm). The model includes a user defined slow-wave circuit with a spatially tapered region of loss to implement a sever, and spatially varied geometry (such as helical pitch) to implement a phase velocity taper. The model also includes user defined input/output coupling and an electron beam contained by solenoidal, electrostatic, or periodic permanent magnet (PPM) focusing allowing standard or novel TWTs to be investigated. This model comprehensively takes into account the effects of frequency dependent nonlinear distortions (MAM and AMPM); gain ripple due to frequency dependent reflections at the input/output coupling, severs, and mismatches from dynamic pitch variations; drive induced oscillations; harmonic generation; intermodulation products; and backward waves.

Kory, Carol L.↗
NASA NTRS2002

Simulation Model of A Ferroelectric Field Effect Transistor

An electronic simulation model has been developed of a ferroelectric field effect transistor (FFET). This model can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The model uses a previously developed algorithm that incorporates partial polarization as a basis for the design. The model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current has values matching actual FFET's, which were measured experimentally. The input and output resistance in the model is similar to that of the FFET. The model is valid for all frequencies below RF levels. A variety of different ferroelectric material characteristics can be modeled. The model can be used to design circuits using FFET'S with standard electrical simulation packages. The circuit can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The model is a drop in library that integrates seamlessly into a SPICE simulation. A comparison is made between the model and experimental data measured from an actual FFET.

MacLeod, Todd C.↗
DOE OSTI2023

Development of a dynamical model and energy analysis for wheel loader

The objective of this paper is to develop a fully integrated model for the wheel loader, including the subsystem dynamics of the engine, drivetrain, working circuit, steering circuit, and vehicle. It leads to a high-order strongly nonlinear system, and all state variables are coupled together to form a Multi-Input and Multi-Output (MIMO) system. A control architecture is proposed to decouple the MIMO system into several Single-Input and Single-Output (SISO) systems. Here, a tracking problem has been formulated to validate this fully integrated model with the field test data. The accuracy of the model is verified by the 2.3% difference between the measured and simulated fuel consumption. Meanwhile, an energy distribution analysis is conducted to reveal the energy consumption and energy loss of each portion of the wheel loader. Such a model can be used to plan the working pattern, guide the driving habits of human operators, or refine the underlying architecture, leading to the ultimate goal of reducing total fuel consumption and improving productivity.

42 ENGINEERING↗
NASA NTRS1990

Calculating Second-Order Effects in MOSFET's

Collection of mathematical models includes second-order effects in n-channel, enhancement-mode, metal-oxide-semiconductor field-effect transistors (MOSFET's). When dimensions of circuit elements relatively large, effects neglected safely. However, as very-large-scale integration of microelectronic circuits leads to MOSFET's shorter or narrower than 2 micrometer, effects become significant in design and operation. Such computer programs as widely-used "Simulation Program With Integrated Circuit Emphasis, Version 2" (SPICE 2) include many of these effects. In second-order models of n-channel, enhancement-mode MOSFET, first-order gate-depletion region diminished by triangular-cross-section deletions on end and augmented by circular-wedge-cross-section bulges on sides.

Benumof, Reuben↗
DOE OSTI2026

Non-Invasive Electrode Impedance Estimation for Optimized Charge Profile Parameterization of Lithium-Ion Batteries

This work presents a non-invasive method for parameterizing a physically motivated equivalent circuit model of lithium-ion batteries using operando electrochemical impedance spectroscopy and time-domain data. The proposed model consists exclusively of linear circuit elements, enabling computationally efficient simulation and real-time implementation on battery management system chips. By integrating frequency- and time-domain measurements, the model accurately estimates internal states such as the negative electrode potential, achieving a root mean square error of 12.3 mV during fast charging validation. Parameterization requires only rate tests with sinusoidal perturbations at three different ambient temperatures, making the approach experimentally accessible. The model reveals key insights into battery behavior, including rate-dependent overpotentials primarily governed by charge transfer kinetics at the positive electrode, and temperature-dependent impedance contributions from both charge transfer and solid-state diffusion processes. Validation using reference electrodes confirms the model’s ability to detect lithium plating onset and reproduce impedance behavior across a wide range of operating conditions. The approach enables in situ optimization of fast charging profiles and lays the foundation for future extensions incorporating aging effects and plating dynamics.

25 ENERGY STORAGE↗
DOE OSTI2025

Ultra-high Bandwidth, Ultra-high Dynamic Range X-Ray Shock Characterization via Photonic Integrated Circuit

Nuclear weapon component assessment tests at the Z Machine rely on accurate X-ray yield measurements for model validation, design and analysis of component survivability, and source optimization. Yield measurement devices currently used do not provide the requisite certainty to enable accurate and efficient data analysis of test results, which leads to an increase in Z-shots required for evaluation, longer device development times, and higher operation costs. Additionally, current X-ray flux detectors lack high temporal resolution at the tails. Similarly, shock measurement techniques used for component assessment often lack the ability to spatially resolve wave behavior thereby limiting the ability to measure shock propagation dynamics needed to design the next generation of ND components. Here we present the development of a photonic micro-calorimeter and shock sensor consisting of meter-long waveguide spirals that are optomechanically coupled to X-ray absorbing layers to characterize yield and shock propagation at nanosecond timescales.

42 ENGINEERING↗