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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

A new SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector has been fabricated by molecular beam epitaxy (MBE). The detection mechanism of the SiGe/Si HIP detector is infrared absorption in the degenerately doped p+-SiGe layer followed by internal photoemission of photoexcited holes over a heterojunction barrier. By adjusting the Ge concentration in the SiGe layer, and, consequently, the valence band offset between SiGe and Si, the cutoff wavelength of SiGe HIP detectors can be extended into the LWIR (8-17-micron) regime. Detectors were fabricated by growing p+-SiGe layers using MBE on patterned p-type Si substrates. The SiGe layers were boron-doped, with concentrations ranging from 10 to the 19th/cu cm to 4 x 10 to the 20th/cu cm. Infrared absorption of 5-25 percent in a 30-nm-thick p+-SiGe layer was measured in the 3-20-micron range using a Fourier transform infrared spectrometer. Quantum efficiencies of 3-5 percent have been obtained from test devices in the 8-12-micron range.

Lin, True-Lon↗
NASA NTRS1993

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

Lin, T. L.↗
NASA NTRS2012

320 x 256 Complementary Barrier Infrared Detector Focal Plane Array for Long-Wave Infrared Imaging

A 320 x 256 Complementary Barrier Infrared (CBIRD) focal plane array for long-wavelength infrared (LWIR) imaging is reported. The arrays were grown by molecular beam expitaxy (MBE) with a 300 period 1.9 um thick absorber. The mean dark current density of 2.2 x 10-4 A/cm2 was measured at an operating bias of 128 mV with a long wavelength cutoff of 8.8 ?m observed at 50% of the peak. The maximum quantum efficiency was 54% measured at 5.6 ?m. Operating at T = 80K, the array yielded an 81% fill factor with 97% operability. Good imagery with a mean noise equivalent different temperature (NE?T) of 18.6 mK and a mean detectivity of D* = 1.3 x 1011 cm-Hz1/2/W was achieved. The substrate was thinned using mechanical lapping and neither an AR coating nor a passivation layer was applied. This article provides the details of the fabrication process for achieving low-dark current LWIR CBIRD arrays. Discussion for an effective hard mask for excellent pattern transfer is given and appropriate mounting techniques for good thermal contact during the dry etching process is described. The challenges and differences between etching large 200 ?m test diodes and small 28 ?m FPA pixels are given.

Focal Plane Arrays (FPA)↗
NASA NTRS2009

nBn Infrared Detector Containing Graded Absorption Layer

It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

Gunapala, Sarath D.↗
NASA NTRS1993

Photoresponse Model for Si_(1-x)Ge_x/Si Heterojunction Internal Photoemission Infrared Detector

A photoresponse model has been developed for the Si_(1-x)Ge_x/Si heterojunction internalphotoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than theFermi energy. A Si_(0.7)Ge_(0.3)/Si HIP detector with a cutoff wavelength of 23 micrometers andan emission coefficient of 0.4 eV^(-1) has been demonstrated. The model agrees with the measureddetector response at lambda greater than 8 micrometers. The potential barrier determined by themodel is in close agreement (difference similar to 4 meV) with the potential barrier determined by theRichardson plot, compared to the discrepancies of 20-50 meV usually observed for PtSi Schottkydetectors.

Lin, T.↗
NASA NTRS2011

High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A mid-wavelength infrared (MWIR) barrier photodetector is capable of operating at higher temperature than the prevailing MWIR detectors based on InSb. The standard high-operating-temperature barrier infrared detector (HOT-BIRD) is made with an InAsSb infrared absorber that is lattice-matched to a GaSb substrate, and has a cutoff wavelength of approximately 4 microns. To increase the versatility and utility of the HOT-BIRD, it is implemented with IR absorber materials with customizable cutoff wavelengths. The HOT-BIRD can be built with the quaternary alloy GaInAsSb as the absorber, GaAlSbAs as the barrier, on a lattice-matching GaSb substrate. The cutoff wavelength of the GaInAsSb can be tailored by adjusting the alloy composition. To build a HOT-BIRD requires a matching pair of absorber and barrier materials with the following properties: (1) their valence band edges must be approximately the same to allow unimpeded hole flow, while their conduction band edges should have a large difference to form an electron barrier; and (2) the absorber and the barrier must be respectively lattice-matched and closely lattice-matched to the substrate to ensure high material quality and low defect density. To make a HOT-BIRD with cutoff wavelength shorter than 4 microns, a GaInAsSb quaternary alloy was used as the absorber, and a matching GaAlSbAs quaternary alloy as the barrier. By changing the alloy composition, the band gap of the quaternary alloy absorber can be continuously adjusted with cutoff wavelength ranging from 4 microns down to the short wavelength infrared (SWIR). By carefully choosing the alloy composition of the barrier, a HOT-BIRD structure can be formed. With this method, a HOT-BIRD can be made with continuously tailorable cutoff wavelengths from 4 microns down to the SWIR. The HOT-BIRD detector technology is suitable for making very-large-format MWIR/SWIR focal plane arrays that can be operated by passive cooling from low Earth orbit. High-operating temperature infrared with reduced cooling requirement would benefit space missions in reduction of size, weight, and power, and an increase in mission lifetime.

Ting, David Z.↗
NASA NTRS1988

Characterization of direct readout Si:Sb and Si:Ga infrared detector arrays for space-based astronomy

Preliminary test results from the evaluation of Si:Sb and Si:Ga 58 x 62-element infrared detector arrays are presented. These devices are being characterized under background conditions and readout rates representative of operation in orbiting, crogenically-cooled infrared observatories. The arrays are hybridized to silicon direct-readout multiplexers which allow random-access and nondestructive readout. Array performance optimization is being conducted with a flexible microcomputer-based drive and readoaut electronics system. Preliminary Si:Sb measurements indicate a sense node capacitance of 0.06 pF, peak (28-micron) responsivity above 3 A/W at 2V bias, read noise of 130 rms e(-), dark current approximately 10 e(-)/s, and a well capacity greater than 10 to the 5th e(-). The limited test data available on the performance of the Si:Ga array are also discussed.

Mckelvey, Mark E.↗
NASA NTRS1986

Microcomputer control of infrared detector arrays

A microcomputer-based data-acquisition system has been developed for astronomical observing with two-dimensional infrared detector arrays. The hardware used is a 16-bit, 8086/8087 based system operating at 8 MHz. Data rates of up to 454,000 pixels per second are supported. The hardware is operated using interactive software which supports several modes of data acquisition.

Rossano, G. S.↗
NASA NTRS2010

Optical Studies on Antimonide Superlattice Infrared Detector Material

In this study the material quality and optical properties of type II InAs/GaSb superlattices are investigated using transmission and photoluminescence (PL) spectroscopy. The influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector current-voltage (IV) characteristics and the PL intensity is observed. Studies of the temperature dependence of the PL reveal that Shockley-Read-Hall processes are limiting the minority carrier lifetime in both the mid-IR wavelength and the long-IR wavelength detector material studied. These results demonstrate that PL spectroscopy is a valuable tool for optimization of infrared detectors.

heterostructure↗
NASA NTRS1990

Fundamental limits to performance of quantum well infrared detectors

Radiometric, density of states (material), and thermal considerations are used to obtain the figure of merit of the quantum-well GaAs/GaAlAs infrared detectors described by Smith et. al. The results are compared with HgCdTe, the present industry standard, as well as with recent experiments at other laboratories.

Yariv, Amnon↗
NASA NTRS2018

Intra-Pixel Response Characterization of a HgCdTe Near Infrared Detector with a Pronounced Crosshatch Pattern

The “crosshatch” pattern is a recurring “feature” of HgCdTe arrays, specifically the Teledyne HAWAII family of near infrared detectors. It is a fixed pattern of high frequency QE variations along 3 directions generally thought to be related to the crystal structure of HgCdTe. The pattern is evident in detectors used in WFC3/IR, WISE, JWST, and in candidate detectors for Euclid and WFIRST. Using undersampled point sources projected onto a HAWAII-2RG detector, we show that the pattern induces photometric variations that are not removed by a flat-field calibration, thus demonstrating that the QE variations occur on scales smaller than the 18 micron pixels. Our testbed is the Precision Projector Laboratory’s astronomical scene generator, which can rapidly characterize the full detector by scanning thousands of undersampled spots. If not properly calibrated, detectors showing strong crosshatch may induce correlated errors in photometry, astrometry, spectroscopy, and shape measurements.

Smith, Roger↗
NASA NTRS1980

Space applications of superconductivity - Microwave and infrared detectors

This is the fifth of a seven part series on the potential applications of superconductivity in space. The potential of superconducting microwave and infrared detectors for space applications is reviewed. The devices considered include bolometers, super-Schottky diodes and Josephson junctions operating as oscillators, mixers, and parametric amplifiers. In each case the description includes the physical mechanism, theoretical limits and the current state of the art for the superconducting device as well as its nonsuperconducting competitors.

Hamilton, C. A.↗
NASA NTRS1989

Subminiature infrared detector translation stage

This paper describes a precision subminiature three-axis translation stage used in the GOES Sounder to provide positional adjustment of 12 cooled infrared detectors. Four separate translation stages and detectors are packaged into a detector mechanism which has an overall size of 0.850 x 1.230 x 0.600 inches. Each translation stage is capable of + or - 0.015 inch motion in the X and Y axes and +0.050/-0.025 inch motion in the Z axis with a sensitivity of 0.0002 inches. The function of the detector translation stage allows real time detector signal peaking during Sounder alignment. The translation stage operates in a cryogenic environment under a 10 to the -6th torr vacuum.

Bell, Alan D.↗
NASA NTRS1990

Stacked silicide/silicon mid- to long-wavelength infrared detector

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Maserjian, Joseph↗
NASA NTRS2012

JWST Near-Infrared Detector Degradation: Finding the Problem, Fixing the Problem, and Moving Forward

The James Webb Space Telescope (JWST) is the successor to the Hubble Space Telescope. JWST will be an infrared optimized telescope, with an approximately 6.5 m diameter primary mirror, that is located at the Sun-Earth L2 Lagrange point. Three of JWST's four science instruments use Teledyne HgCdTe HAWAII-2RG (H2RG) near infrared detector arrays. During 2010, the JWST Project noticed that a few of its 5 micron cutoff H2RG detectors were degrading during room temperature storage, and NASA chartered a "Detector Degradation Failure Review Board" (DD-FRB) to investigate. The DD-FRB determined that the root cause was a design flaw that allowed indium to interdiffuse with the gold contacts and migrate into the HgCdTe detector layer. Fortunately, Teledyne already had an improved design that eliminated this degradation mechanism. During early 2012, the improved H2RG design was qualified for flight and JWST began making additional H2RGs. In this article we present the two public DD-FRB "Executiye Summaries" that: (1) determined the root cause of the detector degradation and (2) defined tests to determine whether the existing detectors are qualified for flight. We supplement these with a brief introduction to H2RG detector arrays, and a discussion of how the JWST Project is using cryogenic storage to retard the degradation rate of the existing flight spare H2RGs.

Rauscher, Bernard J.↗
NASA NTRS1993

Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors. The extended cutoffwavelengths resulted from the reduced effective potential barriers due to the combined effects of anincreased electric field near the silicide/Si interface and the Schottky image force. The p+ dopingspikes were grown by molecular beam epitaxy at 450 degrees C using elemental boron as the dopantsource, with doping concentrations ranging from 5 x 10^(19) to 2 x 10^(20) cm^(-3). The cutoffwavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIRregime was demonstrated. Furthermore, the effective potential barriers determined by the Richardsonplots were used to study the electrically activated boron dopant concentrations of the thin (1-nm-thick) spikes.

del Castillo, H. M.↗