Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “information storage”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Synthesis of Eu(HCOO) 3 and $\mathrm{Eu(HCOO)_3}$ • $\mathrm{(HCONH_2)_2}$ crystals and observation of their 5 D 0 → 7 F 0 transition for quantum information systems

Two stoichiometric metal-organic frameworks containing Eu 3+ cations are probed as candidates for photon-based quantum information storage. Synthesis procedures for growing 0.2 mm, rod-shaped Eu(HCOO) 3 and 1–3 mm, rhombohedral $\mathrm{Eu(HCOO)_3}$ • $\mathrm{(HCONH_2)_2}$ single crystals are presented with visible precipitation as soon as 1 h into heating for Eu(HCOO) 3 and 24 h for $\mathrm{Eu(HCOO)_3}$ • $\mathrm{(HCONH_2)_2}$. Room temperature and 1.4 K photoluminescence measurements of the 5 D 0 → 7 F J transitions of Eu 3+ are analyzed for both compounds. Comparisons of peak width and intensity are discussed along with the notable first report for both of the 5 D 0 → 7 F 0 transition, the hyperfine structure of which has potential use in quantum memory applications. Furthermore, the air instability of $\mathrm{Eu(HCOO)_3}$ • $\mathrm{(HCONH_2)_2}$ and the transformation of its photoluminescence properties are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Laser-induced forces on atoms during ultrafast demagnetization

Laser-induced femtosecond demagnetization has attracted a broad attention as a possible candidate for information storage technology. However, whether or not lattice vibration directly participates in demagnetization has been highly controversial over a decade. A recent electron diffraction experiment attributed the demagnetization to the polarized phonon effect, but a similar x-ray diffraction experiment attributed it to the Einstein–de Haas effect. Common to both experiments is that neither the angular momentum of the lattice nor the rotation of the sample was directly probed. Here, we report our first first-principles calculation of forces on atoms induced by an ultrafast laser during ultrafast demagnetization. We employ two complementary methods: (i) the frozen lattice with electronic excitation and (ii) frozen excitation but moving the lattice. We find that the forces on atoms start at –50 fs and peak around 30 fs. The magnitude of the force is far smaller than the empirical estimates. Within the limit of our theory, our results suggest that the polarized phonon effect and the Einstein–de Haas effect are unlikely to be the main course of demagnetization. As a result, we expect that our finding has a profound impact on the future direction of laser-induced dynamics in magnetic and quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Structural and electronic characteristics of amorphous Ge 8 Sb 2 Te 11

GeTe-rich phase-change materials can be utilized in rewriteable optical memory due to the large contrast in reflectivity between amorphous and crystalline phases. Here we explored the structure and electronic properties of amorphous Ge 8 Sb 2 Te 11 using ab initio molecular dynamics simulations. The results indicate that amorphous Ge 8 Sb 2 Te 11 is dominantly composed of Ge-, Sb- and Te-centered octahedrons with distortions, while 30.4 % of Ge-centered clusters are in the form of tetrahedrons which are randomly distributed. The 5-fold rings possess a large proportion, and the Gesingle bondTe and Sbsingle bondTe bonds present larger formation energies than other bonds, leading to the ABAB bonding sequence (A: Ge and Sb, B: Te). The lone pair electrons locating at the opposite direction of bonds possess a large fraction of 14.8 %, which may enhance the distortions of local clusters. Importantly, these structural properties lead to the high stability of amorphous Ge 8 Sb 2 Te 11 and thus long data retention in the information storage.

36 MATERIALS SCIENCE↗
DOE OSTI2021

On the in-plane vibrations and electromechanical resonance characteristics of non-uniformly polarized rectangular piezoelectric wafers: Selective mode-type excitation and specific mode enhancement

Here, we investigate the in-plane vibrations and electromechanical resonance characteristics of non-uniformly polarized rectangular piezoelectric wafers. Non-uniform polarization is represented as a non-uniform electromechanical coupling coefficient using a polarization function. Governing equations are derived for the forced in-plane vibrations of a thin wafer under the assumption of generalized plane stress. The effect of non-uniform polarization is explicitly obtained in the forcing terms of the governing equations. These equations are then recast into a variational weak form that is then solved using the finite element method to obtain the displacement fields for different modes. The electromechanical response of a non-uniformly polarized piezoelectric wafer is derived in terms of the out-of-plane displacement profile on the surface of the wafer. Using the derived analytical expression, a necessary and sufficient condition for the presence/absence of a vibrational mode in the electromechanical impedance spectrum is obtained. Based on this condition, criteria for selective mode-type excitation and specific mode enhancement of vibrational modes in the electromechanical impedance spectrum are postulated. Selective mode-type excitation of in-plane extensional and shear modes is demonstrated for a square wafer and that of in-plane bending modes is demonstrated for a rectangular wafer. Specific mode enhancement is demonstrated for both square and rectangular wafers. In addition, it is also demonstrated how the criteria can be used to suppress specific vibrational modes in the electromechanical impedance spectrum. The proposed methodology of using non-uniformly polarized piezoelectric wafers finds application in the design of single element transducers with multi-frequency operation, frequency-tuned receivers/sensors, acoustic holograms, designing acoustic beams of prescribed shape/lobes, and other non-traditional applications such as information storage.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Multiparametric AFM Insights into Electron Transport Mechanisms in Biomemristors

Biomemristors have attracted significant attention due to their applications in biodegradable and flexible electronic devices, and their prospective functions in information storage, neural synapses, and neuromorphic computation. Hence, understanding biomaterials' resistive switching (RS) mechanism is essential to design novel biomemristors with enhanced performance. In the last decade, various atomic force microscopy (AFM) modes, such as Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (cAFM), in situ/operando visualize the electron transport behaviors within biomemristors at the nanoscale. This review provides a comprehensive discussion of multiparametric AFM techniques to characterize biomemristors and inspire new ideas in developing next-generation consumer electronics. We also summarize the progress of revealing the internal mechanism of biomemristors with functional AFM to visualize and understand the switching behavior. Finally, the opportunities and challenges of further utilizing multiparametric AFM to explore the electron transport mechanisms in biomemristors are presented.

Shi, Chenyang↗
DOE OSTI2022

Specific resonance mode enhancement and suppression using non-uniform polarization of piezoelectric wafers: Theory and experiments

In this work, we present experimental demonstration of specific resonance mode enhancement and suppression in circular and rectangular piezoelectric wafers with engineered non-uniform polarization profiles. The polarization profiles are designed based on the electromechanical impedance response of non-uniformly polarized wafers as obtained from the theory. The circular wafers are fabricated with non-uniform polarization profiles that involve a central polarized region surrounded by an unpolarized region. The radius of the polarization zone is designed based on the condition for specific mode enhancement obtained from the electromechanical impedance response of non-uniformly polarized wafers. We actually show how the condition can not only be used to enhance but also to suppress electromechanical resonances. Two kinds of wafers are designed and fabricated to specifically suppress second and third radial modes respectively. Similarly, rectangular wafers are designed with two different kinds of non-uniform polarization profiles — the first of which enhances the second in-plane extensional mode in the impedance spectrum and the second polarization profile suppresses all the electromechanical resonances pertaining to the in-plane extensional modes and selectively excites only the in-plane bending modes. The proposed approach of using non-uniformly polarized wafers finds application in designing multi-frequency sensors/transducers, frequency-tuned receivers, acoustic beamforming, and other non-traditional applications such as information storage.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Optically Addressing Circularly Polarized Vibrations in Molecules

Circularly polarized (CP) vibrations are the nuclear-motion analog of CP light, emerging in molecules with non-Abelian point-group symmetry that support orthogonal and degenerate vibrational normal modes. Here, in this work, we theoretically explore the optical addressability of CP vibrations, motivated by their potential as nanoscale angular momentum states suitable for information storage and manipulation. We investigate how symmetry-breaking chemical modifications affect a molecule’s capacity to support CP vibrations. Notably, we find cases where modes retain their orthogonality and degeneracy in spite of such modifications, broadening the opportunities afforded by CP vibrations beyond non-Abelian point-group molecules. Prospects for experimental implementations using CP pump–probe techniques are briefly discussed.

group theory↗
DOE OSTI2025

Curvature Memory in Electrically Stimulated Lipid Membranes

Here, we demonstrate, using non-equilibrium molecular dynamics simulations, that lipid membrane capacitance varies with surface charge accumulation linked to membrane shape and curvature changes. Specifically, we show that lipid membranes exhibit a hysteretic response when exposed to oscillatory electric fields. The electromechanical coupling in these membranes leads to hysteretic buckling, in which the membrane can spontaneously buckle in one of two distinct directions along the electric field, even for the same ionic charge accumulation at the water–membrane interface. In this regard, these binary buckled membrane states suggest potential applications in neuromorphic computing. Their bistable nature, characterized by two distinct and stable configurations, could serve as a foundation for implementing memory storage systems and logic operations. Furthermore, we introduce a circuit model that captures these dynamic effects, offering insights into emergent memory effects in electrically stimulated lipid membranes. Finally, this work presents lipid bilayers as dynamic, adaptable elements and suggests a new platform for exploring energy storage, information processing, and memory encoding at the lipid membrane level.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Relaxor Ferroelectric-Like Spatiotemporal Memory in Field-Driven Lipid Bilayers

Lipid membranes are often regarded as passive barriers, yet their nonlinear dielectric response remains poorly understood. Using all-atom molecular dynamics, we show that fully hydrated dipalmitoylphosphatidylcholine bilayers exhibit relaxor ferroelectric-like behavior under time-dependent electric fields. Unlike crystalline relaxors, which are bipolar and display little remanent polarization, lipid bilayers exhibit a unipolar polarization response: even an alternating current field produces persistent, asymmetric polarization. Furthermore, the underlying free-energy landscape contains two distinct minima, a nonpolarized state and a unipolarly polarized state, between which stochastic thermally activated transitions occur. Directionally resolved Van Hove analysis reveals pronounced anisotropy arising from out-of-plane electric dipole alignment, interleaflet coupling, and lateral polarization domains. Each field cycle nucleates polarization at distinct sites and monitors their relaxation, marking a crossover from thermal fluctuations to field-sustained polarization. Remarkably, these polarized domains persist after field removal, generating long-lived, spatially coherent dipolar patterns that encode nanoscale polarization memory. Potassium chloride amplifies these effects via dielectric screening and a modified hydration structure, enhancing electric dipole flexibility and cooperativity. Together, these results establish protein-free bilayers as nonlinear, history-dependent dielectrics capable of sustaining field-tunable electromechanical coupling, providing an emergent physical foundation for nanoscale information storage and memory phenomena reminiscent of short- and long-term plasticity in soft neuromorphic systems.

Insulators↗
DOE OSTI2021

Antiphase-Boundary-Engineered Domain Switching in a (110)-Oriented BiFeO 3 Film

A ferroelectric domain wall memory device exploits the presence (or absence) of domain walls as the basis for information storage. Although structural defects strongly influence ferroelectric domain wall nucleation and growth, this correlation is far from being fully understood. For example, a single defect can play opposing roles: it can act as a nucleation site to initiate domain switching or, conversely, serve as a pinning center inhibiting domain wall motion. This is particularly the case for antiphase boundaries (APBs), whose influence on switching remains relatively unexplored despite being ubiquitous in oxide perovskite ferroelectrics. Here, we use aberration-corrected scanning transmission microscopy and in situ transmission electron microscopy under an applied bias to extensively characterize the influence of an APB on the switching behavior in a (110)-oriented BiFeO 3 thin film. We demonstrate that deterministic nucleation occurs in the proximity of a vertically oriented APB, following which domain growth occurs laterally in a symmetric fashion. Atomic-scale structural analysis reveals that the shear operation vector for the APB is 1/2[110]; this half-unit-cell shift extends over a few nanometers, implying that the APB plane is inclined toward the imaging direction. The symmetric switching observation is attributed to local inhomogeneous lattice strain and a reduction of polarization caused by the APB. These results demonstrate that an extended structural defect can be used as an active switching element rather than a stumbling block in reprogrammable domain-wall-based devices. Ultimately, this will expand the capabilities of ferroelectric thin films for future electronic devices based on ferroelectric domain walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

Two-dimensional polyimide covalent organic framework (2D PI-NT COF) films were constructed on indium tin oxide-coated glass substrates to fabricate two-terminal sandwiched resistive memory devices. The 2D PI-NT COF films condensated from the reaction between 4,4',4"-triaminotriphenylamine and naphthalene-1,4,5,8-tetracarboxylic dianhydride under solvothermal conditions demonstrated high crystallinity, good orientation preference, tunable thickness, and low surface roughness. The well-aligned electron-donor (triphenylamine unit) and -acceptor (naphthalene diimide unit) arrays rendered the 2D PI-NT COF films a promising candidate for electronic applications. The memory devices based on 2D PI-NT COF films exhibited a typical write-once-read-many-time resistive switching behavior under an operating voltage of +2.30 V on the positive scan and -2.64 V on the negative scan. A high ON/OFF current ratio (>10 6 for the positive scan and 10 4 -10 6 for the negative scan) and long-term retention time indicated the high fidelity, low error, and high stability of the resistive memory devices. The memory behavior was attributed to an electric field-induced intramolecular charge transfer in an ordered donor-acceptor system, which provided the effective charge-transfer channels for injected charge carriers. Furthermore, this work represents the first example that explores the resistive memory properties of 2D PI-COF films, shedding light on the potential application of 2D COFs as information storage media.

2D covalent organic framework film↗
DOE OSTI2021

Giant Topological Hall Effect in van der Waals Heterostructures of CrTe 2 /Bi 2 Te 3

Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 mu Omega.cm in the van der Waals heterostructures of CrTe 2 /Bi 2 Te 3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe 2 , strong SOC in Bi 2 Te 3 , and an atomically sharp interface. Furthermore, our work reveals CrTe 2 /Bi 2 Te 3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Local Interface Effects Modulate Global Charge Order and Optical Properties of 1T–TaS2/1H–WSe2 Heterostructures

1T-TaS2 is a layered charge density wave (CDW) crystal exhibiting sharp phase transitions and associated resistance changes. These resistance steps could be exploited for information storage, underscoring the importance of controlling and tuning the CDW states. Given the importance of out-of-plane interactions in 1T-TaS2, modulating interlayer interactions by heterostructuring is a promising method for tailoring CDW phase transitions. In this work, we investigate the optical and electronic properties of heterostructures comprising 1T-TaS2 and monolayer 1H-WSe2. By systematically varying the thickness of 1T-TaS2 and its azimuthal alignment with 1H-WSe2, we find that intrinsic moiré strain and interfacial charge transfer introduce CDW disorder in 1T-TaS2 and modify the CDW ordering temperature. Furthermore, our studies reveal that the interlayer alignment impacts the exciton dynamics in 1H-WSe2, indicating that heterostructuring can concurrently tailor the electronic phases in 1T-TaS2 and the optical properties of 1H-WSe2. This work presents a promising approach for engineering the optoelectronic behavior of heterostructures that integrate CDW materials and semiconductors.

charge density wave↗
DOE OSTI2025

Autonomous Multistate Nanoencoding Using Combinatorial Ferroelectric Closure Domains in BiFeO 3

Recent advances in ferroic materials have identified topological defects as promising candidates for enabling additional functionalities in future electronic systems. The generation of stable and customizable polar topologies is needed to achieve multistates that enable beyond-binary device architectures. Here, in this study, we show how to autonomously pattern on-demand highly tunable striped closure domains in pristine rhombohedral-phase BiFeO 3 thin films through precise scanning of a biased atomic force microscopy tip along carefully designed paths. By employing this strategy, we generate and manipulate closed-loop structures with high spatial resolution in an automated manner, allowing the creation of highly tunable and intricate topological domain structures that exhibit distinct polarization configurations without the need for electrode deposition or complex heterostructure growth. As a proof-of-concept for ferroelectric beyond-binary memory devices, we use such topological domains as multistates, engineering an alphabet and automating the symbolic writing/reading process using autonomous microscopy. The resulting information density is compared with that of current commercially available memory devices, demonstrating the potential of ferroelectric topological domains for multistate information storage applications.

BiFeO3↗
DOE OSTI2026

Nanocrystal Geometry Governs Phase Transformation Pathways in Palladium Hydride

Pathways and structural dynamics of phase transformations impact performance of materials in energy and information storage technologies. Palladium hydride (PdH x ) nanocrystals are an ideal model system for studying solute-induced phase transformations, where elastic energy from lattice mismatch between α-PdH x and β-PdH x phases is often considered a key to determining the transformation pathways. α/β-PdH x interfacial elastic energy is affected by the confined geometry of a nanocrystal. However, how nanocrystal geometry influences phase transformation pathways is largely unknown. Using in situ liquid phase transmission electron microscopy, we directly visualize hydrogenation in Pd nanocrystals with two geometries, a nanocube and a hexagonal nanoplate. Both follow similar sequences of an initially curved nucleus, interface flattening, and reverse-stage nucleation; however, their evolving α/β-PdH x interfaces exhibit geometry-dependent crystallographic alignments. In nanocubes, {100}-aligned configurations conform to static elastic energy ordering, representing a pathway that maintains a local mechanical equilibrium, whereas nanoplates display both {110}- and {211}-aligned interfaces. Theoretical simulations show that geometry determines the accessibility of alternative phase transformation pathways as the system is driven far from equilibrium during hydrogenation. In conclusion, these findings identify geometry as a fundamental parameter for directing phase transformation pathways, offering design principles for accessing atypical configurations and improving properties of intercalation-based devices.

Lee, Daewon [Lawrence Berkeley National Laboratory↗
DOE OSTI2021

Polarization-Insensitive Medium-Switchable Holographic Metasurfaces

The adoption of metasurfaces has led to revolutionary advances in holography due to improved compactness, integrability, and performance. Switchable meta-holograms projecting different replay field images in a controllable manner are highly desirable. Still, existing technologies generally rely on the use of polarized light and additional optics to facilitate switching. Consequently, the potential benefits afforded through the use of metasurfaces are limited both by the system complexity and a fixed relationship between the optical input and output. In this manuscript, we demonstrate polarization-insensitive metasurfaces encoding arbitrary and independent holograms, which can be switched between by changing the refractive index of the infiltration medium while maintaining identical illumination conditions. Finally, by sidestepping the requirements for high-performance light sources, switching optics, or delicate alignment, this approach points toward ultracompact and cost-effective switchable meta-holograms for various practical applications, such as holographic image projection, eye-perceptible sensors, optical information storage, processing, and security.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Skyrmion-like Spin Textures Emerging in the Material Derived from Structural Frustration

Magnetic materials with complex spin textures present both fundamental and practical appeal. The complex patterns of magnetic moments emerging on underlying crystal lattices hold potential for robust information storage and processing, including the promise of topological quantum computing. The scope of materials that host such patterns, however, remains rather limited. Here, in this study, we report a discovery of a complex spin texture in a noncentrosymmetric material that emerges from the structural frustration at the boundary between centrosymmetric parent structures MnCoGe (the hexagonal Ni 2 In or the orthorhombic TiNiSi structure type) and MnCoAs (the TiNiSi structure type). Our findings demonstrate that such structural frustration provides a powerful handle for identifying compositional spaces where complex magnetic behavior and associated nontrivial magnetic structures are likely to emerge. Thus, the new phase MnCoGe 1/3 As 2/3 exhibits a modulated cycloidal antiferromagnetic arrangement of electron spins on a noncentrosymmetric lattice (of the hexagonal ZrNiAl type) that materializes in the space between centrosymmetric collinear ferromagnets. This work provides a pathway for discovering novel materials with exotic spin textures for next-generation spintronics and quantum technologies.

Wang, YiXu [Florida State University, Tallahassee,↗
DOE OSTI2022

Reversible writing/deleting of magnetic skyrmions through hydrogen adsorption/desorption

Abstract Magnetic skyrmions are topologically nontrivial spin textures with envisioned applications in energy-efficient magnetic information storage. Toggling the presence of magnetic skyrmions via writing/deleting processes is essential for spintronics applications, which usually require the application of a magnetic field, a gate voltage or an electric current. Here we demonstrate the reversible field-free writing/deleting of skyrmions at room temperature, via hydrogen chemisorption/desorption on the surface of Ni and Co films. Supported by Monte-Carlo simulations, the skyrmion creation/annihilation is attributed to the hydrogen-induced magnetic anisotropy change on ferromagnetic surfaces. We also demonstrate the role of hydrogen and oxygen on magnetic anisotropy and skyrmion deletion on other magnetic surfaces. Our results open up new possibilities for designing skyrmionic and magneto-ionic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗