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Viewgraphs on high efficiency low cost GaAs/Ge cell technology are presented. Topics covered include: high efficiency, low cost GaAs/Ge solar cells; advantages of Ge; comparison of typical production cells for space applications; panel level comparisons; and solar cell technology trends.
The Avion is the result of an investigation into the preliminary design for a high-efficiency commercial transport aircraft. The Avion is designed to carry 79 passengers and a crew of five through a range of 1,500 nm at 455 kts (M=0.78 at 32,000 ft). It has a gross take-off weight of 77,000 lb and an empty weight of 42,400 lb. Currently there are no American-built aircraft designed to fit the 60 to 90 passenger, short/medium range marketplace. The Avion gathers the premier engineering achievements of flight technology and integrates them into an aircraft which will challenge the current standards of flight efficiency, reliability, and performance. The Avion will increase flight efficiency through reduction of structural weight and the improvement of aerodynamic characteristics and propulsion systems. Its design departs from conventional aircraft design tradition with the incorporation of a three-lifting-surface (or tri-wing) configuration. Further aerodynamic improvements are obtained through modest main wing forward sweeping, variable incidence canards, aerodynamic coupling between the canard and main wing, leading edge extensions, winglets, an aerodynamic tailcone, and a T-tail empennage. The Avion is propelled by propfans, which are one of the most promising developments for raising propulsive efficiencies at high subsonic Mach numbers. Special attention is placed on overall configuration, fuselage layout, performance estimations, component weight estimations, and planform design. Leading U.S. technology promises highly efficient flight for the 21st century; the Avion will fulfill this promise to passenger transport aviation.
A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.
The design of a high efficiency, long life terrestrial module was completed. It utilized 256 rectangular, high efficiency solar cells to achieve high packing density and electrical output. Tooling for the fabrication of solar cells was in house and evaluation of the cell performance was begun. Based on the power output analysis, the goal of a 13% efficiency module was achievable.
Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.
High-efficiency III-V multijunction solar cells require multiple alloys with optimal bandgaps and excellent material quality. However, many useful alloys are lattice-mismatched to available substrates, and require strain-engineering tricks to enable efficient use. To this extent, we have developed low-dislocation density metamorphic material and optically-thick stress-balanced superlattices, enabling access to a wide variety of III-V alloys. Combined with transparent tunnel junctions, these components allow optimizing multijunction devices for a variety of applications. We have designed multijunction cells for the G173G-terrestrial and AM0-space spectra with record 39.5% and 34.2% efficiency, respectively, and also thermophotovoltaic cells for blackbody spectra that reach over 40% TPV-efficiency. Finally, using these PV components, we demonstrate a multijunction LED with high quantum efficiency.
Progress on research in high-efficiency silicon solar cells is presented. Topics addressed include: recombination measurement techniques, doped crystals, minority carrier transport, oxygen process in solar cells, solar cell models, loss mechanics in solar cells, high-efficiency metal insulators, dendritic web cells, and surface and bulk loss reduction by low-energy hydrogen doping.
Progress on the development of a high efficiency module is described. The effort includes development of high efficiency cells using crystalline silicon wafers from float zone silicon. Module-size cells, 53 sq cm in area, were fabricated with efficiency of 18%. Operating temperature reduction is also studied.
In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.
The high efficiency dehumidification system (HEDS) is a unique air handling unit (AHU) design with two water coils. Connected in series, these water coils can sensibly reheat the airstream after it is cooled and dehumidified, thereby mitigating (or sometimes eliminating) the need for conventional sensible reheat with additional energy from hot water, electric resistance or steam coils. Another unique design feature is the size of the HEDS primary cooling coil. While typical AHU cooling coils have a 6-row geometry, the HED's cooling coil has a deeper 10-row geometry enabling discharge air dew point temperatures at or below 55 degrees F despite warmer chilled water supply temperatures approaching (sometimes exceeding) 50 degrees F. The ability to meet acceptable discharge air dew points with warmer chilled water supply temperatures improves both operational efficiency and system resilience against chilled water plant operational or control issues. This report summarizes the 59 steady-state test results that form a comprehensive performance map of the HEDS technology including its reheat capability. The breadth of outdoor air conditions and flow rates over which the HEDS technology was tested and characterized encompasses the unit 1) operating as a dedicated outdoor air system or mixed air system and 2) controlled with constant air volume or variable air volume fan control.
NASA’s High Efficiency Megawatt Motor (HEMM) is being developed to achieve the performance needed by single aisle class electrified aircraft. It is a 1.4 MW electric machine designed as a generator for NASA’s STARC-ABL concept vehicle. It has performance objectives of greater than 16 kW/kg electromagnetic specific power and efficiency of greater than 98%. A significant flaw in the preliminary electromagnetic design of HEMM was recently discovered. The stator teeth in the preliminary design cause the magnetic flux in the rotating components of HEMM to oscillate at a very high frequency (12,240 Hz). Two independent energy loss analyses are presented to show that the frequency is high enough to cause eddy current losses that significantly exceed the rotor’s loss limit (50 W), despite the very small magnitude of this flux oscillation (<0.01 T). To eliminate these rotor losses, while continuing to meet the target performance, it was determined that the stator teeth needed to be removed and the electromagnetic geometry of the motor needed to be revised. The revised, slotless HEMM motor design is summarized. Sensitivity of the new design to key unknown variables such as the temperature of and number of turns in the superconducting rotor coils and the stator winding’s average temperature.
Second generation high temperature superconducting coils provide a very attractive level of performance for use in the field winding of electric machines for aircraft. Aside from maintaining these coils at cryogenic temperatures, much care must be taken to prevent damaging these relatively fragile materials due to excessive stress. Thermal stresses due to temperature cycling and mechanical stresses due to centrifugal forces are the most critical for the High Efficiency Megawatt Motor. This paper summarizes two test campaigns that were undertaken to reduce the risks posed by these loads. In one campaign, several superconducting coils were fabricated, thermally cycled up to 50~times, and electrically tested in liquid nitrogen to assess the change in superconductivity metrics throughout thermal cycling. In the other campaign, a full-scale superconducting coil was fabricated, a test article was designed to produce a representative stress environment in the coil, the test article and coil were rotated at room temperature up to a speed of 11,800~rpm, and the superconductivity metrics were measured in liquid nitrogen before and after each rotation. The experimental results demonstrate that the superconducting coils manufactured in house can survive both thermal cycling and high speed rotation with no appreciable degradation in superconducting performance.
Highly efficient special sound absorbing structures with the following criteria are considered: (1) A distribution surface of the sound absorbing material greater than that of the building element on which the structure is placed; (2) The highest possible absorption coefficient in the widest possible frequency band; and (3) adaptability to different construction and aesthetic conditions.
High-efficiency p-Ga(1-x)Al(x)As, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga(1-x)Al(x)As layer 0.2-0.4 micron thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
This viewgraph presentation presents information on the attempt to produce high-order, efficient, central methods that scale well to high dimension. The central philosophy is that the equations should evolve to the point where the data is smooth. This is accomplished by a cyclic pattern of reconstruction, evolution, and re-projection. One dimensional and two dimensional representational methods are detailed, as well.
The objective of the High Efficiency Propulsion (HEP) project is to research, develop, and demonstrate life cycle cost-effective Class 8 battery electric vehicles utilizing an 800 V high efficiency and compact 250 kW continuous power SiC inverter designed to support the commercial operations of the high continuous loads and challenging shock/vibration environment of heavy-duty trucks with an electrified axle specifically designed for high performance and efficiency in battery-electric Class 8 trucks used in medium range (~250 miles) distribution, and compared to the baseline Peterbilt 579 electric truck fleet performance using an IGBT inverter. The project was split into 3 budget periods, with the first two being design and development focused, and the final one is an on-vehicle demonstration phase of the high efficiency SiC traction drive inverter with daily mileage accumulation.
This project focuses on developing high efficiency light emitting diodes (LEDs) with green, amber, and longer wavelengths using two compatible material systems based on III-nitride and II-IV-nitride semiconductor heterostructures. The proposed approach uses low-indium-content InGaN and ZnGeN 2 or ZnSnN 2 heterostructure quantum wells (QWs) as the active regions for high efficiency green and amber LEDs, and therefore to advance high efficiency color-mixed white LED technology. This approach takes advantage of the increased flexibility, afforded by the incorporation of the II-IV-nitrides into the III-nitride layers, to tune the QW active region to lower the emission wavelengths and to increase the electron-hole wave function overlap. This strategy paves a new way to extend the InGaN QW LED emission wavelength without using high-indium-content InGaN. An industrially preferable metalorganic chemical vapor deposition (MOCVD) method was used to develop the growth of ZnGeN 2 and ZnSnN 2 that are compatible with the InGaN growth. The unique dual chamber MOCVD instrument at OSU was used in this project. This program created an opportunity for the two institutions (The Ohio State University and Case Western Reserve University) with complementary expertise to perform this work. Two graduate students (Md Rezaul Karim (OSU) and Benthara Hewage Dinushi Jayatunga (CWRU)) gained experience in MOCVD growth and various characterization methods including scanning electron microscopy, x-ray diffraction spectroscopy, x-ray photoemission spectroscopy, Hall measurements, cathodoluminescence and photoluminescence. Both students successfully defended their PhD dissertations in April/May 2021. Both Karim and Jayatunga have joined Intel as engineers in June/July 2021. Another two graduate students Kaitian Zhang (OSU) and Chenxi Hu (CWRU) joined the project team since spring 2021 to continue on this project. They were trained on MOCVD epitaxy of InGaN QWs and materials characterization including SEM, AFM, PL, CL, XRD, Hall measurements and electroluminescence. A third student, Vijay Gopal Thirupakuzi Vangipuram (OSU), who joined the group in fall 2021 to perform LED fabrication and characterization. The key research accomplishments of the project include: (1) Successful development of MOCVD epitaxy of single crystalline ZnGeN 2 and ZnSnN 2 . MOCVD growth parameters that determine the stoichiometry of ZnGeN 2 and ZnSnN 2 films were identified. (2) Experimentally determined the band offsets between GaN/ZnGeN 2 and GaN/ZnGaSnN 2 hetero-interfaces, which agree very well with the theoretical predictions. (3) Demonstrated the incorporation of thin ZnGeN 2 layer in InGaN QWs. Proof-of-concept of the InGaN-ZnGeN 2 QW design demonstrated as much as 80 nm of red shift without increasing In composition or QW thickness. (4) InGaN/ZnGeN 2 QWs emitting at 480 nm achieved IQE of 47%. Resulted from this project, 7 journal articles were published, and 9 conference papers were presented.
Programs aimed at developing large area, high efficiency GaAs heteroface cells for low concentration space applications and high concentration terrestrial applications as well as other programs aimed at developing high efficiency multicolor devices for use in similar applications are described. An additional program aimed at achieving improved power to weight ratio by parting thin film solar cells from their growth substrates prior to their incorporation into an array assembly is also described. There is potential for multiple reuse of the substrates which could lead to reduced costs for such devices. Highlights of these programs and their interrelated contributions toward the goals of reducing specific weight, volume and cost of photovoltaic space power systems are discussed. Overall goals are summarized and current programs and their funding sources are listed.