A Gallium Nitride-Based Matchless Radio-Frequency Generator Phase I Final Technical Report
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70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
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Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics
Researchers have been extensively studying wide-bandgap (WBG) semiconductor materials such as gallium nitride (GaN) with an aim to accomplish an improvement in size, weight, and power of power electronics beyond current devices based on silicon (Si). However, the increased operating power densities and reduced areal footprints of WBG device technologies result in significant levels of self-heating that can ultimately restrict device operation through performance degradation, reliability issues, and failure. Typically, self-heating in WBG devices is studied using a single measurement technique while operating the device under steady-state direct current measurement conditions. However, for switching applications, this steady-state thermal characterization may lose significance since the high power dissipation occurs during fast transient switching events. Therefore, it can be useful to probe the WBG devices under transient measurement conditions in order to better understand the thermal dynamics of these systems in practical applications. In this work, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry. Also, the proper use of iterative pulsed measurement schemes such as thermoreflectance thermal imaging to determine the steady-state operating temperature of devices is discussed. These studies are followed with subsequent transient thermal characterization to accurately probe the self-heating from steady-state down to submicrosecond pulse conditions using both thermoreflectance thermal imaging and Raman thermometry with temporal resolutions down to 15 ns.
42 ENGINEERING↗
Ultrawide-bandgap semiconductors: An overview
Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a renaissance exemplified by advances in material-level understanding, extensions of known concepts to new materials, novel device concepts, and new applications. as such, this focus issue presents a timely selection of papers spanning the current state of the art in UWBG materials and applications, including both experimental results and theoretical developments. It covers broad research subtopics on UWBG bulk crystals and substrate technologies, UWBG defect science and doping, UWBG epitaxy, UWBG electronic and optoelectronic properties, and UWBG power devices and emitters. In this overview article, we consolidate the fundamentals and background of key UWBG semiconductors including aluminum gallium nitride alloys (Al x Ga 1– x N), boron nitride (BN), diamond, β-phase gallium oxide (β-Ga 2 O 3 ), and a number of other UWBG binary and ternary oxides.
36 MATERIALS SCIENCE↗
Wide Bandgap Semiconductor Devices and Systems for Communications in Extreme Environment
The feasibility of gallium nitride based wide bandgap semiconductor devices for signal amplification in extreme planetary environment is investigated. The measured performance of these devices at S-band, X-band, and Ka-band are presented. The data indicates excellent performance at the above frequencies. Potential application of these devices includes communication systems required to operate in the extreme hot environment of Venus and in the extreme cold and high radiation environment of Jupiter’s icy moons.
Gallium Nitride↗
Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions
In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, and noise figure. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
high power amplifier↗
Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions
In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
High power amplifier↗
Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment
The feasibility of Ka-band gallium nitride (GaN) based high power amplifier (HPA) for signal amplification in extreme planetary environment is investigated and its measured performance is presented. The data includes Pout, PAE, EVM for several waveforms and data rates, output spectrum, IMD, Noise Figure, and Gain. The data indicates excellent overall performance. Potential application of this HPA includes communication systems required to operate in the extreme hot environment of Mercury and Venus, extreme cold and high radiation environment of Jupiter’s icy moons, and Artemis missions that involve human/robotic exploration and long-term presence on the Moon.
Gallium Nitride↗
A Spectrally Efficient Ka-Band GaN Power Amplifier with Scalable Power Combining Architecture for Lunar High Data Rate Direct-to-Earth Communications
The output power from a single gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) power amplifier (PA) chip is limited to few watts. To achieve higher power, the output from several chips have to be combined. In this paper we present, the results of a study conducted to investigate a 2-way power combiner to combine the output power from two GaN MMIC based high power amplifier (HPA) chips The parameters investigated includes the power combiner characteristics, individual GaN MMIC based HPA output power, gain, and power added efficiency, and the overall performance of the combined amplifier.
Gallium Nitride↗
What limits the efficiency of GaN-based superluminescent light-emitting diodes (SLEDs)?
Gallium-nitride-based SLEDs are attractive light sources for augmented reality displays and other applications. However, the electrical-to-optical power conversion efficiency (PCE) of SLEDs is still far below the record-high values reported for LEDs. Utilizing advanced numerical device simulation, this paper investigates the internal physical processes that cause the low PCE of SLEDs. The poor hole conductivity strongly reduces the electrical efficiency, similar to laser diodes. However, in contrast to laser diodes, the rising carrier density in the active layers is identified as main reason for enhanced Auger recombination that severely limits the internal quantum efficiency. Design improvement options are demonstrated.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Comparison of CCM- and CRM-Based Boost Parallel Active Power Decoupler for PV Microinverter
Single-phase inverter or rectifier systems often make use of an active power decoupler (APD) to balance the mismatch between constant dc power and fluctuating ac power. This article deals with the comparison of continuous conduction mode (CCM) and critical conduction mode (CRM) operation-based design of a parallel boost-type APD for photovoltaic microinverter applications. From a design perspective, multiobjective analysis of efficiency, volume, and cost is explored within a decision space including planar inductors, gallium nitride based devices, film capacitors, switching frequency, and modulation (CCM vs. CRM). The theoretical study analyzes all possible design configurations within CCM and CRM and identifies Pareto-optimal designs, from which the selected CRM design can achieve reduced system volume and lower cost with the use of smaller inductor core, while operating with similar California Energy Commission efficiency drop as the selected CCM design. From a control perspective, a pulsewidth modulation based control strategy is proposed to implement closed-loop CRM modulation that does not rely on zero-crossing detection. Furthermore, closed-loop systems are designed for the optimal CCM and CRM realizations, and the final system characteristics are compared. Experimental results, obtained using two separate 40-V, 400-W hardware prototypes for CCM and CRM, are presented to verify the analyses.
42 ENGINEERING↗
Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms
A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this paper, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), and phase noise. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.
Gallium nitride↗
Benefits of Ka-band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms
A cognitive radio on a future NASA near-Earth spacecraft will be capable of sensing its environment and dynamically adapting its operating parameters to provide the desired SATCOM service to the mission. A key component that can enable this type of operation is a high-power amplifier (HPA) that resides on the radio platform. In this report, we present the RF performance characteristics of a Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added efficiency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rdorder intermodulation distortion (IMD) products, spectrum, spectral regrowth, noise figure (NF), phase noise, and group delay. The data presented indicates that the HPA meets NTIA, military, and commercial spectral mask requirements. In addition, we discuss the benefits offered by the above performance characteristics toward the design and implementation of a cognitive radio platform. Furthermore, as examples, we discuss three potential use cases that apply artificial intelligence (AI) and machine learning (ML) techniques and exploit the performance characteristics discussed above to provide a knowledge-based cognitive radio platform design for SATCOM. Thus, cognitive radios with performance flexibility can enable roaming and provide seamless interoperability autonomously in the future between NASA, commercial, and other space networks owned by U.S. government agencies.
Gallium nitride↗
Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices
Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.
14 SOLAR ENERGY↗
Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes
Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System
Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.
42 ENGINEERING↗
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings
Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.
42 ENGINEERING↗
Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions
Vertical gallium nitride (GaN) p-n diodes have garnered significant interest for use in power electronics where high-voltage blocking and high-power efficiency are of concern. In this article, we detail the growth and fabrication methods used to develop a large area (1 mm 2 ) vertical GaN p-n diode capable of a 6.0-kV breakdown. We also demonstrate a large area diode with a forward pulsed current of 3.5 A, an 8.3-mΩ$\cdot$cm 2 differential specific ON-resistance, and a 5.3-kV reverse breakdown. In addition, we report on a smaller area diode (0.063 mm 2 ) that is capable of 6.4-kV breakdown with a differential specific ON-resistance of 10.2 mΩ$\cdot$cm 2 , when accounting for current spreading through the drift region at a 45° angle. Finally, the demonstration of avalanche breakdown is shown for a 0.063-mm 2 diode with a room temperature breakdown of 5.6 kV. In this work, these results were achieved via epitaxial growth of a 50-μm drift region with a very low carrier concentration of <1×10 15 cm –3 and a carefully designed four-zone junction termination extension.
42 ENGINEERING↗
Design, Optimization, and Validation of GaN-Based DAB Converter for Active Cell Balancing in BTMS Applications: Preprint
This paper focuses on the design of a bidirectional dual active bridge (DAB) DC/DC converter that utilizes Gallium Nitride (GaN) switches as active components. In the existing literature, MOSFET-based DAB for active cell balancing is available, but GaN-based DAB converter for active cell balancing is still new. The proposed modular isolated GaN-based DAB converter is designed as an individual module of active cell balancing for behind-the-meter storage (BTMS) applications, targeting high-power charging stations. Modular isolated converters are connected to each cell (low voltage bus), and each cell is connected in series to build up a battery module. According to the reference current command of supervisory control, each DAB converter can transfer power back and forth through the high voltage (HV) bus to balance the State of Charge (SoC) between the cells. Each module DAB converter is designed at a 50W power rating. Switch power and transformer losses are analyzed for different switching frequencies, showing the optimum switching frequency for minimum losses. Furthermore, the procedure to select the required gate driver and the PCB layout optimization are discussed. Finally, the DAB performance analysis of GaNbased DAB and Si-based DAB is provided for a battery module operating with a LiFeMnPO4 prismatic cell with 3.2V 20Ah rated values.
active cell balancing↗