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At least 109 records · Page 6

Ferroelectric and dielectric properties of ferrite-ferroelectric ceramic composites

Particulate composites of ferrite and ferroelectric phases with xNiFe{sub 2}O{sub 4} (NF) and (1 - x)Pb{sub 0.988}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.976}Nb{sub 0.024}O{sub 3} (where x = 2, 10, 20, 30, 50, 70, and 100 wt. %) were prepared in situ by sol-gel method. The presence of a diphase composition was confirmed by X-ray diffraction while the microstructure of the composites was studied by scanning electron microscopy revealing a good mixing of the two phases and a good densification of the bulk ceramics. The dielectric permittivity shows usual dielectric dispersion behavior with increasing frequency due to Maxwell-Wagner interfacial polarization. AC conductivity measurements made in frequency range 1 Hz-1 MHz suggest that the conduction process is due to mixed polaron hopping. The effect of NF phase concentration on the P-E and M-H hysteresis behavior and dielectric properties of the composites was investigated. At low NF concentration a sharp ferro-paraelectric transition peak can be observed at around 360 Degree-Sign C while for higher NF concentrations a trend to a diffuse phase transition occurs. All the composite samples exhibit typical ferromagnetic hysteresis loops, indicating the presence of ordered magnetic structure.

36 MATERIALS SCIENCE↗

Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear coupling between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nanoscale excitonic photovoltaic mechanism in ferroelectric BiFeO 3 thin films [Nanoscale excitonic mechanism underlying the bulk photovoltaic effect in ferroelectric BiFeO 3 thin films]

We report an electrode-free photovoltaic experiment in epitaxial BiFeO 3 thin films where the picosecond optical absorption arising from carrier dynamics and piezoelectric lattice distortion due to the photovoltaic field are correlated at nanoscale. The data strongly suggest that the photovoltaic effect in phase-pure BiFeO 3 originates from diffusion of charge-neutral excitons and their subsequent dissociation localized at sample interfaces. This is in stark contrast to the belief that carrier separation is uniform within the sample due to the lack of center of symmetry in BiFeO 3 . As a result, this finding is important for formulating strategies in designing practical photovoltaic ferroelectric devices.

36 MATERIALS SCIENCE↗

First-principles studies of the local structure and relaxor behavior of Pb ( Mg 1 / 3 Nb 2 / 3 ) O 3 – PbTiO 3 -derived ferroelectric perovskite solid solutions

We have investigated the effect of transition-metal dopants on the local structure of the prototypical 0.75Pb(Mg 1/3 Nb 2/3 )O 3 –0.25PbTiO 3 relaxor ferroelectric. We find that these dopants give rise to very different local structure and other physical properties. For example, when Mg is partially substituted by Cu or Zn, the displacement of Cu or Zn is much larger than that of Mg and is even comparable to that of Nb. The polarization of these systems is also increased, especially for the Cu-doped solution, due to the large polarizability of Cu and Zn. As a result, the predicted maximum dielectric constant temperatures T m are increased. On the other hand, the replacement of a Ti atom with a Mo or Tc atom dramatically decreases the displacements of the cations and the polarization, and thus, the T m values are also substantially decreased. Here, the higher T m cannot be explained by the conventional argument based on the ionic radii of the cations. Furthermore, we find that Cu, Mo, or Tc doping increases the cation displacement disorder. Here, the effect of the dopants on the temperature dispersion ΔT m , which is the change in T m for different frequencies, is also discussed. Our findings lay the foundation for further investigations of unexplored dopants.

25 ENERGY STORAGE↗

Diffraction Methods for Qualitative and Quantitative Texture Analysis of Ferroelectric Ceramics

Crystallographic textures are pervasive in ferroelectrics and underpin the functional properties of devices utilizing these materials because many macroscopic properties (e.g., piezoelectricity) require a non-random distribution of dipoles. Inducing a preferred grain texture has become a viable route to improve these functional properties. X-ray and neutron diffraction have become valuable tools to probe crystallographic textures. This paper presents an overview of qualitative and quantitative methods for assessing crystallographic textures in electroceramics (domain and grain textures) and discusses their strengths and weaknesses.

36 MATERIALS SCIENCE↗

Ferroelectrics: Revealing the Effects of Trace Oxygen Vacancies on Improper Ferroelectric Manganite with In Situ Biasing (Adv. Electron. Mater. 4/2019)

In article number 1800827, Shaobo Cheng, Yimei Zhu and the co-workers observe a novel ferroelectric switching dynamic behavior in the single-phase multiferroic material YMnO 3 . In situ observations and corresponding numerical calculations reveal that defect chemistry plays an important role in domain switching and can be utilized as an additional parameter for controlling the electricfield distribution within multiferroic materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Role of ferroelectric polarization during growth of highly strained ferroelectric materials

In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure. Here we show that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. This is studied by focusing on the properties of BaTiO 3 thin films grown on very thin layers of PbTiO 3 using x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. This motivates the concept of polarization engineering as a complementary approach to strain engineering.

36 MATERIALS SCIENCE↗

Building ferroelectric from the bottom up: The machine learning analysis of the atomic-scale ferroelectric distortions

Recent advances in scanning transmission electron microscopy (STEM) have enabled direct visualization of the atomic structure of ferroic materials, enabling the determination of atomic column positions with approximately picometer precision. This, in turn, enabled direct mapping of ferroelectric and ferroelastic order parameter fields via the top-down approach, where the atomic coordinates are directly mapped on the mesoscopic order parameters. In this paper, we explore the alternative bottom-up approach, where the atomic coordinates derived from the STEM image are used to explore the extant atomic displacement patterns in the material and build the collection of the building blocks for the distorted lattice. Lastly, this approach is illustrated for the La-doped BiFeO 3 system.

36 MATERIALS SCIENCE↗

Reply to “Comment on ‘Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3 ' ” [Response to Comment by S. Durbin on “Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3 ”]

In this reply to S. Durbin's comment on our original paper “Ultrafast terahertz-field-driven ionic response in ferroelectric BaTiO 3 ,” we concur that his final equations 8 and 9 more accurately describe the change in diffracted intensity as a function of Ti displacement. Here, we also provide an alternative derivation based on an ensemble average over unit cells. The conclusions of the paper are unaffected by this correction.

74 ATOMIC AND MOLECULAR PHYSICS↗

Deaging and Asymmetric Energy Landscapes in Electrically Biased Ferroelectrics

In ferroic materials, the dielectric, piezoelectric, magnetic, and elastic coefficients are significantly affected by the motion of domain walls. This motion can be described as the propagation of a wall across various types and strengths of pinning centers that collectively constitute a force profile or energetic landscape. Biased domain structures and asymmetric energy landscapes can be created through application of high fields (such as during electrical poling), and the material behavior in such states is often highly asymmetric. In some cases, this behavior can be considered as the electric analogue to the Bauschinger effect. The present Letter uses time-resolved, high-energy x-ray Bragg scattering to probe this asymmetry and the associated deaging effect in the ferroelectric morphotropic phase boundary composition 0.36BiScO{sub 3}-0.64PbTiO{sub 3}.

Tutuncu, Goknur↗