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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Final Physics Design of Proton Improvement Plan-II At Fermilab

This paper presents the final physics design of the Proton Improvement Plan-II (PIP-II) at Fermilab, focusing on the linear accelerator (Linac) and its beam transfer line. We address the challenges in longitudinal and transverse lattice design, specifically targeting collective effects, parametric resonances, and space charge nonlinearities that impact beam stability and emittance control. The strategies implemented effectively mitigate space charge complexities, resulting in significant improvements in beam quality -- evidenced by reduced emittance growth, lower beam halo, decreased loss, and better energy spread management. This comprehensive study is pivotal for the PIP-II project's success, providing valuable insights and approaches for future accelerator designs, especially in managing nonlinearities and enhancing beam dynamics.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Higher-order space-charge stability in anisotropic beams: Vlasov-Poisson derivation, refined dispersion relations, and stability charts

The Hofmann stability chart is used to screen working points in space-charge-dominated linacs. We identify two errors in its published higher-order dispersion relations: missing $(1\mp2\hatη^2/α)$ factors in the third-order $S^4$ coupling residues, and a sign error in the stated isotropic reduction of the fourth-order relation. Both corrections follow from Hofmann's Vlasov-Poisson equations without fitted parameters. They reproduce coherent tune-shift coefficients in the author's later monograph that the printed forms miss by 24% and 127%. Mode-resolved figures from a published application agree with the corrected relations and reject the printed forms, indicating an inconsistency between the 1998 equations and the calculations underlying those tested figures. We quantify the effect on the non-oscillatory stability chart. Inside the adopted $S^2\le10$ comparison domain, printed and corrected forms disagree on 0.73-2.11% of cells, with no preferred direction. Among excluded cells, disagreement reaches 22%, and the printed relation over-predicts instability at every sampled anisotropy. This concentration may help explain why the errors persisted, although it does not establish their historical cause. For PIP-II, the corrected chart flags four of thirty-two evaluable periods, including one on a third-order odd branch missed by a second-order screen. This count covers non-oscillatory modes only and remains conditional on an unresolved factor-five disagreement between two codes on transverse emittance growth.

Pathak, Abhishek [Fermilab] (ORCID:000000021704208↗
DOE OSTI2024

Multi-beam operation of LANSCE accelerator facility

The Los Alamos Neutron Science Center (LANSCE) accelerator facility has been in operation for 50 years performing important scientific support for national security. The unique feature of the LANSCE accelerator facility is multi-beam operation, delivering beams to five experimental areas. The near-term plans are to replace obsolete and almost end-of-life systems of the LANSCE linear accelerator with a modern 100-MeV Front End with significant improvement in beam quality. This paper summarizes experimental results obtained during the operation of the LANSCE accelerator facility and considers plans to expand the performance of the accelerator for near- and long-term operations.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗
DOE OSTI2023

Towards COP27: Decarbonization patterns of residential building in China and India

As the two largest emerging emitters with the highest growth in operational carbon emissions from residential buildings, the historical emission patterns and decarbonization efforts of China and India warrant further exploration. This study aims to be the first to present a carbon intensity model considering end-use performances, assessing the operational decarbonization progress of residential building in India and China over the past two decades using the newest decomposing structural decomposition approach. Results indicate (1) the annual operational carbon intensity increased by 1.4% and 2.5% in China and India, respectively, between 2000 and 2020. Household expenditure-related energy intensity and emission factors were crucial in decarbonizing residential buildings. (2) Building electrification played a significant role in decarbonizing space cooling (–87.7 in China and – 130.2 kg of carbon dioxide (kgCO 2 ) per household in India) and appliances (~ –169.7 in China and ~ –43.4 kgCO 2 per household in India). (3) China and India collectively decarbonized 1498.3 and 399.7 M-tons of CO 2 in residential building operations, respectively. In terms of decarbonization intensity, India (164.8 kgCO 2 per household) nearly caught up with China (182.5 kgCO 2 per household) in 2020 and is expected to surpass China in the upcoming years, given the country's robust annual growth rate of 7.3%. Overall, this study provides an effective data-driven tool for investigating the building decarbonization potential in China and India, and offers valuable insights for other emerging economies seeking to decarbonize residential buildings in the forthcoming COP28 1 age.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2026

Measurement of the QE Map

113 MHz SRF gun utilized CsK 2 Sb and Na 2 KSb cathodes, which were irradiated with a pulsed green laser with a wavelength of 0.53 microns. The drive laser generated 78 kHz pulses with an acousto-optic modulator selecting the desired number of pulses reaching the cathode. The operator can select the aperture size, defining the laser spot diameter on the cathode, and the power level, which is controlled by a rotating polarizer. The laser power reaching the cathode can be measured with a meter based on a photodiode. The quantum efficiency (QE) of a photocathode serves as a primary indicator of its state. Small QE renders the cathode unusable when the desired bunch charge cannot be achieved. Strong variations in the quantum efficiency on the cathode surface might lead to the growth of the beam emittance due to the space charge effects. We have created a routine to measure the distribution of the QE on the cathode. The operator selects the aperture size, the central spot location, and the scan ranges for both planes. The scan starts from the central spots and proceeds along a spiral-like trajectory, making N rounds. The number of rounds can be chosen, and the total number of measured points is (2N+1) 2 . The laser spot movement is shown in Fig. 1.

43 PARTICLE ACCELERATORS↗
NASA NTRS2004

The Role of Plasma in Plasma Enhanced Chemical Vapour Deposition of Nanostructure Growth

Chemical vapour deposition (CVD) has become the preferred process for high yield growth of carbon nanotubes and nanofibres because of its ability to pattern growth through lithographic positioning of transition metal catalysts on substrates. Many potential applications of nanotubes such as field emitters [1] require not only patterned growth but also vertical alignment. Some degree of ali,ment in thermal CVD processes can be obtained when carbon nanotubes are grown closely together as a result of van der Waals interactions. The ali,onment however is marginal, and the van der Waals prerequisite makes growth of freestanding nanofibres with thermal CVD unrealizable. The application of electric fields as a means of ali,onment has been shown to overcome this limitation [2-5], and highly aligned nanostructures can be grown if electric fields on the order of 0.5 V/microns are employed. Plasma enhanced CVD in various configurations including dc, rf, microwave, inductive and electron cyclotron resonance has been pursued as a means of enabling alignment in the CVD process. However, the sheath fields for the non-dc sources are in general not sufficient for a high degree of ali,pment and an additional dc bias is usually applied to the growth substrate. This begs the question as to the actual role of the plasma. It is clear that the plasma itself is not required for aligned growth as references [3] and [4] employed fields through small applied voltages (3-20 V) across very small electrode spacings (10-100 microns) and thus avoided striking a discharge.

Hash, David B.↗
DOE OSTI2024

Design study of a low emittance complex bend achromat lattice

Light sources worldwide have experienced rapid growth in the last decades, pushing toward higher brightness with lower emittance to meet growing demands from the user community. The quest for higher brightness motivates the development of low-emittance ring lattices. At this point, all fourth-generation storage ring light sources employ variations of the multibend achromat (MBA) lattice. In this paper, we discuss an extension of this approach, known as complex bend achromat lattice in relation to the future NSLS-II upgrade. A detailed approach for the lattice design will be described and the developed lattice will be presented. The advantages of using our complex bend approach are evident in reaching a natural emittance as low as 23 pm at a beam energy of 3 GeV, providing a straight section of 8.4 m for long insertion devices, and acquiring a ratio of about 50% of free space with respect to the ring circumference. The design includes the use of permanent magnets largely reducing the need for power supplies. Our new approach provides an extension to the MBA concept for the next-generation light source lattice design. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
NASA NTRS2013

Concurrent Supermassive Black Hole and Galazy Growth: Linking Environment and Nuclear Activity in Zeta Equals 2.23 H Alpha Emitters

We present results from an approximately equal 100 ks Chandra observation of the 2QZ Cluster 1004+00 structure at z = 2.23 (hereafter 2QZ Clus). 2QZ Clus was originally identified as an overdensity of four optically-selected QSOs at z = 2.23 within a 15 × 15 arcmin square region. Narrow-band imaging in the near-IR (within the K band) revealed that the structure contains an additional overdensity of 22 z = 2.23 H alpha-emitting galaxies (HAEs), resulting in 23 unique z = 2.23 HAEs/QSOs (22 within the Chandra field of view). Our Chandra observations reveal that three HAEs in addition to the four QSOs harbor powerfully accreting supermassive black holes (SMBHs), with 2-10 keV luminosities of approximately equal (8-60) × 10(exp 43) erg s(exp−1) and X-ray spectral slopes consistent with unobscured active galactic nucleus (AGN). Using a large comparison sample of 210 z = 2.23 HAEs in the Chandra-COSMOS field (C-COSMOS), we find suggestive evidence that the AGN fraction increases with local HAE galaxy density. The 2QZ Clus HAEs reside in a moderately overdense environment (a factor of approximately equal 2 times over the field), and after excluding optically-selected QSOs, we find that the AGN fraction is a factor of approximately equal 3.5(+3.8/ −2.2) times higher than C-COSMOS HAEs in similar environments. Using stacking analyses of the Chandra data and Herschel SPIRE observations at 250micrometers, we respectively estimate mean SMBH accretion rates ( M(BH)) and star formation rates (SFRs) for the 2QZ Clus and C-COSMOS samples. We find that the mean 2QZ Clus HAE stacked X-ray luminosity is QSO-like (L(2−10 keV) approximately equal [6-10] × 10(exp 43) erg s(exp −1)), and the implied M(BH)/SFR approximately equal (1.6-3.2) × 10(exp −3) is broadly consistent with the local M(BH)/Stellar Mass relation and z approximately equal 2 X-ray selected AGN. In contrast, the C-COSMOS HAEs are on average an order of magnitude less X-ray luminous and have M(BH)/SFR approximately equal (0.2-0.4) × 10(exp −3), somewhat lower than the local MBH/M relation, but comparable to that found for z approximately equal 1-2 star-forming galaxies with similar mean X-ray luminosities. We estimate that a periodic QSO phase with duty cycle approximately 2%-8% would be sufficient to bring star-forming galaxies onto the local M(BH)/Stellar Mass relation. This duty cycle is broadly consistent with the observed C-COSMOS HAE AGN fraction (Approximately equal 0.4%-2.3%) for powerful AGN with LX approximately greater than 10(exp 44) erg s(exp −1). Future observations of 2QZ Clus will be needed to identify key factors responsible for driving the mutual growth of the SMBHs and galaxies.

Lehmer, B. D.↗
DOE OSTI2022

Electron Ion Collider Strong Hadron Cooling Injector and ERL

Intra-beam Scattering (IBS) and other diffusion mechanisms in the EIC Hadron Storage Ring (HSR) degrade the beam emittances during a store, with growth times of about 2 hours at the nominal proton energies of 275GeV, 100 GeV, and 41 GeV. Strong Hadron Cooling (SHC) can maintain good hadron beam quality and high luminosity during long collision stores. A novel cooling method ’ Coherent electron Cooling (CeC) ’ is chosen as the baseline SHC method, due to its high cooling rates. An Energy Recovery Linac (ERL) is used to deliver an intense high-quality electron beam for cooling. In this paper, we discuss the beam requirements for SHC-CeC and describe the current status of the injector and ERL designs. Two designs of injector and ERL will be presented: one for dedicated SHC and another one for SHC with precooler.

Wang, E.↗
DOE OSTI2023

X-ray Free Electron Laser Accelerator Lattice Design Using Laser-Assisted Bunch Compression

We report the start-to-end modeling of our accelerator lattice design employing a laser-assisted bunch compression (LABC) scheme in an X-ray free electron laser (XFEL), using the proposed Matter-Radiation Interactions in Extremes (MaRIE) XFEL parameters. The accelerator lattice utilized a two-stage bunch compression scheme, with the first bunch compressor performing a conventional bulk compression enhancing the beam current from 20 A to 500 A, at 750 MeV. The second bunch compression was achieved by modulating the beam immediately downstream of the first bunch compressor by a laser with 1-μm wavelength in a laser modulator, accelerating the beam to the final energy of 12 GeV, and compressing the individual 1-μm periods of the modulated beam into a sequence of microbunches with 3-kA current spikes by the second bunch compressor. The LABC architecture presented had been developed based on the scheme of enhanced self-amplified spontaneous emission (ESASE), but operated in a disparate regime of parameters. Enabled by the novel technology of the cryogenic normal conducting radiofrequency photoinjector, we investigated an electron beam with ultra-low emittance at the starting point of the lattice design. Our work aimed at mitigating the well-known beam instabilities to preserve the beam emittance and suppress the energy spread growth.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic-integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time-resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three-dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch-like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Microstructural and preliminary optical and microwave characterization of erbium-doped CaMoO 4 thin films

This work explores erbium-doped calcium molybdate (Er:CaMoO4) thin films grown on silicon and yttria stabilized zirconia (YSZ) substrates, as a potential solid state system for C-band (utilizing the ∼1.5 μm Er 3+ 4f–4f transition) quantum emitters for quantum network applications. Through molecular beam epitaxial growth experiments and electron microscopy, X-ray diffraction, and reflection electron diffraction studies, we identify an incorporation limited deposition regime that enables a 1:1 Ca:Mo ratio in the growing film leading to single phase CaMoO 4 formation that can be in situ doped with Er (typically 2–100 ppm). We further show that growth on silicon substrates is single phase but polycrystalline in morphology, while growth on YSZ substrates leads to high-quality epitaxial single crystalline CaMoO 4 films. We perform preliminary optical and microwave characterization on the suspected Y 1 –Z 1 transition of 2 ppm, 200 nm epitaxial Er:CaMoO 4 annealed thin films and extract an optical inhomogeneous linewidth of 9.1(1) GHz, an optical excited state lifetime of 6.7(2) ms, a spectral diffusion-limited homogeneous linewidth of 6.7(4) MHz, and an EPR linewidth of 1.10(2) GHz.

Masiulionis, Ignas [Univ. of Chicago, IL (United S↗
DOE OSTI2026

Hofmann Stability Charts Revisited for PIP-II: From Classical Theory to Assumption-Free and ML-Driven Maps

The Hofmann stability chart remains a standard for visualizing parametric resonances in space-charge–dominated linacs, but its use typically relies on non-oscillatory Vlasov dispersion relations with simplifying assumptions (continuous focusing, KV phase space, linear optics, limited transverse–longitudinal coupling). We revisit the chart for the PIP-II linac along three tracks. (1) We reproduce the conventional maps in the (νz/νx, νx/ν0x) plane for relevant εz/εx, providing a validated reference. (2) We remove key assumptions by deriving stability surfaces directly from multi-particle tracking with realistic lattice discreteness, RF defocusing, solenoid/quad optics, and bunched-beam dynamics; local tunes and early-time growth rates are estimated from envelope oscillations and projected to the same coordinates. These assumption-reduced maps recover the canonical stopbands while revealing shifts and broadenings driven by tune modulation, non-KV distributions, and transverse–longitudinal coupling at PIP-II intensities. (3) We train a compact machine-learning surrogate that emulates the growth surface from zero-current optics, tune depression, emittance ratio, bunching factor, and selected lattice descriptors, enabling rapid scans and online working-point selection. We compare the three representations on representative PIP-II sections and discuss implications for commissioning guard bands, resonance avoidance, and routine operations.

Pathak, Abhishek [Fermilab] (ORCID:000000021704208↗
NASA NTRS2008

Group-III Nitride Field Emitters

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Bensaoula, Abdelhak↗