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At least 109 records · Page 6

Hong–Ou–Mandel sensing via superradiant coupling of discrete fluorescent emitters

The Hong–Ou–Mandel (HOM) effect is a fascinating quantum phenomenon that defies classical explanation. Traditionally, remote nonlinear sources have been used to achieve coincident photons at the HOM beam splitter. Here, we suggest that the coincident emission source required for HOM interference can be created locally using superradiant near field coupled emitters positioned across the beam splitter gap. We show that sensitivity to permittivity changes in the beam splitter gap, and corresponding Fisher information can be substantially enhanced with HOM photon detection. Subsequently, we outline several strategies for integration of superradiant emitters with practical sensor systems. Taken together, these findings should pave a way for a wide array of near field HOM quantum sensors and novel quantum devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Enhanced spectral purity of WSe 2 quantum emitters via conformal organic adlayers

Quantum emitters in solid-state materials are typically embedded in the bulk of their hosts, making their electronic transitions inaccessible to surface modification. In contrast, two-dimensional materials, with their all-surface nature, offer a platform for tuning quantum emitters via chemical functionalization. Because of its semiconducting properties that enable electrical addressability, monolayer WSe 2 is a promising candidate for quantum emission, although the complex interplay between point defects and the localized strain needed to activate quantum emission leads to poor spectral purity. Here, we demonstrate that functionalizing monolayer WSe 2 with conformal adlayers of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) improves quantum emission spectral purity. Optical spectroscopy reveals that PTCDA functionalization lowers defect activation energies by 10 meV and induces a 30 nm redshift in quantum emission wavelength, while preserving the bright and dark exciton energies of monolayer WSe 2 . First-principles calculations corroborate these findings, thus providing molecular-level insight into the underlying mechanism of enhanced spectral purity.

Ananth, Riddhi [Northwestern Univ., Evanston, IL (↗

Transverse Beam Emittance Measurement by Undulator Radiation Power Noise

Generally, turn-to-turn power fluctuations of incoherent spontaneous synchrotron radiation in a storage ring depend on the 6D phase-space distribution of the electron bunch. In some cases, if only one parameter of the distribution is unknown, this parameter can be determined from the measured magnitude of these power fluctuations. In this contribution, we report the results of our experiment at the Integrable Optics Test Accelerator (IOTA) storage ring, where we carried out an absolute measurement (no free parameters or calibration) of a small vertical emittance (5–15 nm rms) of a flat beam by this new method, under conditions, when the small vertical emittance is unresolvable by a conventional synchrotron light beam size monitor.

43 PARTICLE ACCELERATORS↗

Toward Emittance Measurements at 11.7 GHz Short-Pulse High-Gradient RF Gun

A short pulse high gradient RF gun has been recently tested at Argonne Wakefield Accelerator (AWA) facility. The carried-out test showed that the 1,5-cell gun was able to inject 3 MeV, up to 100 pC bunches at room tem-perature being fed by 9 ns up to 300 MW 11.7 GHz puls-es. The cathode field was as high as about 400 MV/m. So high field is aimed to mitigate repealing Coulomb forces substantially. In accordance with simulations the emit-tance could be as low as less than 0.2 mcm. To obtain so low emittance in the experiment, the gun is assumed to be equipped with a downstream linac to be fed from the same power extractor as the gun itself. Here we report design of the RF power distribution system splitting RF power among the gun and the linac, results of low-power tests, and emittance measurement plans for upcoming new experiment at AWA.

43 PARTICLE ACCELERATORS↗

Studies of Beam Intensity Effects in Fermilab Booster Synchrotron. Part II: Beam Emittance Evolution

Detrimental beam dynamics effects limit performance of high intensity rapid cycling synchrotrons (RCS) such as the 8 GeV Fermilab Booster. Here we report the results of comprehensive studies of various beam intensity dependent effects in the Booster. In the previous publication we presented the dependencies of the Booster beam intensity losses on the total number of protons per pulse and on key operational parameters such as the machine tunes and chromaticities. Here we discuss two methods of the Booster beam emittance measurements (the multi-wires proportional chambers and the ionization profile monitors), analyze the intensity dependent emittance growth effects and discuss the ultimate performance of the machine now and after foreseen and proposed upgrades.

43 PARTICLE ACCELERATORS↗

EMITTANCE GROWTH DUE TO RF PHASE NOISE IN CRAB CAVITIES

The Electron-Ion Collider (EIC) incorporates beam crabbing to recover geometric luminosity loss from the nonzero crossing angle at the interaction point (IP). It is well-known that crab cavity imperfections can cause growth of colliding beam emittances, thus degrading collider performance. Here we report a particle tracking study to quantify these effects. Presently the study is focused on crab cavity RF phase noise. Simulations were carried out using Bmad. Dependence of emittance growth on phase noise level was obtained which could be used for developing crab cavity phase control specifications. We also benchmarked these simulations with theory.

Huang, H.↗

Super-localisation of a point-like emitter in a resonant environment: Correction of the mirage effect

In this paper, we show that it is possible to overcome one of the fundamental limitations of super-resolution microscopy: the necessity to be in an optically homogeneous environment. Using recent modal approximation results from [ 10 , 7 ], we show, as a proof of concept, that it is possible to recover the position of a single point-like emitter in a known resonant environment from far-field measurements, with a precision two orders of magnitude below the classical Rayleigh limit. The procedure does not involve solving any partial differential equation, is computationally light (optimisation in \begin{document}$ \mathbb{R}^d $\end{document} with \begin{document}$ d $\end{document} of the order of \begin{document}$ 10 $\end{document} ) and is therefore suited for the recovery of a very large number of single emitters.

Mathematics↗

Virtual Slit for Improved Resolution in Longitudinal Emittance Measurement

A technique to reduce point-spread originating from physical slit width in emittance measurements is described. This technique is developed to improve phase resolution in a longitudinal emittance apparatus consisting of a dipole magnet, energy-selecting slit and bunch shape monitor. In this apparatus, the energy and phase resolutions are directly proportional to the width of the slit, but the virtual slit method enables sub-slit resolution. The bunch phase profile is measured at two points in the energy distribution with a separation less than the physical slit width. The difference of these two profiles is used to reconstruct the profile from a virtual slit of width equal to the separation.

Ruisard, Kiersten↗

Metal-assisted delayed fluorescent emitters employing pyrido-pyrrolo-acridine and analogues

Metal-assisted delayed fluorescent (MADF) emitters including cyclic tetradentate platinum (II) and palladium (II) complexes employing 8H-pyrido[3′,2′:4,5]-pyrrolo[3,2,1-de]acridine and its analogues. These complexes provide improved color purity and enhanced operational stability and are suitable for luminescent labels, emitters for organic light emitting diodes (OLEDs), and lighting applications.

Li, Jian↗

Ab initio evaluation of the electronic and optical properties of V B C B defect in wurtzite boron nitride as promising single-photon emitter

Single-photon emitters (SPEs) in the near-infrared (NIR) range with sharp and intense zero-phonon lines (ZPLs) of emission are critical for quantum communications. Certain local defects in wide-bandgap semiconductors create isolated occupied and unoccupied states within the bandgap of the host semiconductor and thus exhibit sharp ZPLs of emission. We designed and studied a defect in the wurtzite boron nitride as a potential SPE. It consists of a boron vacancy and a carbon atom substituting another boron atom (V B C B defect). The density of states is obtained within the GW method to identify favorable local defect states that may dominate optical transitions. The dielectric function and oscillator strength of the V B C B defect are obtained using the Bethe-Salpeter equation method to identify the optical excitations of the V B C B defect, from which we conclude that the defect could be a source of NIR emission with a narrow bright ZPL peak, thus an efficient SPE.

36 MATERIALS SCIENCE↗

Site-Controlled Quantum Emitters in Monolayer MoSe 2

Atomically thin semiconductors provide a highly attractive platform for quantum emitters (QEs): They can be combined with arbitrary substrates, can be spatially aligned with photonic structures, and can be electrically driven. All QEs reported to date in these materials have, however, relied on nominally spin-forbidden transitions, with radiative rates falling substantially below those of other solid-state QE systems. In this work, we employ strain confinement in monolayer MoSe 2 to produce engineered QEs, as confirmed in photon antibunching measurements. We discuss spin-allowed versus spin-forbidden transitions based on magneto- and time-resolved photoluminescence measurements. We calculate a radiative rate for spin-allowed quantum emission greater than 1 ns –1 , which exceeds reported radiative rates of WSe 2 QEs by 2 orders of magnitude.

2D materials↗

Telecom-Wavelength Single-Photon Emitters in Multilayer InSe

The development of robust and efficient single-photon emitters (SPEs) at telecom wavelengths is critical for advancements in quantum information science. Two-dimensional (2D) materials have recently emerged as promising sources for SPEs, owing to their high photon extraction efficiency, facile coupling to external fields, and seamless integration into photonic circuits. In this study, we demonstrate the creation of SPEs emitting in the 1000–1550 nm near-infrared range by coupling 2D indium selenide (InSe) with strain-inducing nanopillar arrays. The emission wavelength exhibits a strong dependence on the number of layers. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching, confirming the single-photon nature of the emissions. In conclusion, density-functional-theory calculations and scanning-tunneling-microscopy analyses provide insights into the electronic structures and defect states, elucidating the origins of the SPEs.

2D Material↗

Programmable quantum emitter arrays

Following up on our earlier results in this program, on quantum photonic interface for tin-vacancy in diamond, we demonstrated spin control for this color center. We also worked towards creating engineered arrays of excitons in transition metal dichalcogenides (TMDs) and we developed platforms for efficient exciton-photon coupling. Finally, we worked on new quantum emitter arrays in hexagonal boron nitride.

36 MATERIALS SCIENCE↗

Design Aspects of the Emittance Diagnostic for the Scorpius Accelerator

Dear author, This is a reminder that we are expecting you to resubmit your IPAC'23 paper 1268 at https://indico.jacow.org/event/41/papers/2549/ in a format compliant with the IoP guidelines posted at https://publishingsupport.iopscience.iop.org/author-guidelines-for-conference-proceedings/ Could you please upload your paper as a PDF file in the IoP format at https://indico.jacow.org/event/41/papers/2549/ Title: The Design of the Emittance Diagnostic for the Scorpius Accelerator id: 1268 The deadline for resubmitting your paper is July 1st 2023 but we would appreciate if you could submit it earlier. Thank you in advance, Nicolas Delerue on behalf of the IPAC'23 LPR SPB

43 PARTICLE ACCELERATORS↗

Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon

This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on silicon. These heterostructures are key ingredients to achieving a highly reliable monolithically integrated light source on silicon necessary for photonic-integrated circuits. Around 20%–30% shorter carrier lifetimes are found at spatially resolved individual dislocations at room temperature using time-resolved cathodoluminescence spectroscopy, highlighting the strong nonradiative impact of dislocations even against the three-dimensional confinement of QDs. Beyond these direct effects of increased nonradiative recombination, it is found that misfit dislocations in the defect filter layers employed during III–V/Si growth alter the QD growth environment to induce a crosshatch-like variation in QD emission color and intensity when the filter layer is positioned sufficiently close to the QD emitter layer. Sessile threading dislocations generate even more egregious hillock defects that also reduce emission intensities by altering layer thicknesses, as measured by transmission electron microscopy and atom probe tomography. This work presents a more complete picture of the impacts of dislocations relevant to the development of light sources for scalable silicon photonic integrated circuits.

36 MATERIALS SCIENCE↗

CdTe‐Based Solar Cells with Variations in Mg Concentration in the MgZnO Emitter

The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.

14 SOLAR ENERGY↗

Effects of micrometer-scale surface roughness on thermal infrared emittance spectra of silica glass

Surface roughness is known to decrease thermal infrared (TIR) absorption band intensity, but studies of the effect on geologically relevant samples are relatively limited. To determine the effect of surface roughness (with features smaller than ~2/3 of the wavelength) on TIR spectra, we investigated two glass compositions with prepared roughened surfaces: (1) high purity fused silica and (2) soda-lime glass (73 wt% SiO$_2$). We roughened the surfaces of the glasses by sandblasting and polishing with grit paper. The surfaces were characterized with scanning electron microscopy and stylus profilometry. We then analyzed the roughened glasses with TIR emittance spectroscopy. Micrometer-scale roughness causes a decrease in TIR absorption band intensity, relative to a specular surface. No significant changes in band shape or shifts in wavelength were detected. As roughness increases, empirical results show a logarithmic decrease in TIR absorption band intensity. The logarithmic trends of the two glass compositions are different; empirical roughness calibrations do not translate across different compositions. A linear, least-squares spectral deconvolution using two endmembers, specular and blackbody, predicts model spectra of roughened glass surfaces with relatively low error. This is of consequence to orbital TIR measurements of poorly constrained targets, such as the martian surface, because micrometer-scale roughness is adequately modeled by the addition of a blackbody spectrum to the deconvolution endmember matrix.

36 MATERIALS SCIENCE↗

High-emissivity, thermally robust emitters for high power density thermophotovoltaics

Thermal radiative energy transport is essential for high-temperature energy harvesting technologies, including thermophotovoltaics (TPVs) and grid-scale thermal energy storage. However, the inherently low emissivity of conventional high-temperature materials constrains radiative energy transfer, thereby limiting system performance and technoeconomic viability. Here, in this study, we demonstrate ultrafast femtosecond laser-material interactions to transform diverse materials into near-blackbody surfaces with broadband spectral emissivity above 0.96. This enhancement arises from hierarchically engineered light-trapping microstructures enriched with nanoscale features, effectively decoupling surface optical properties from bulk thermomechanical properties. These laser-blackened surfaces (LaBS) exhibit exceptional thermal stability, retaining high emissivity for over 100 h at temperatures exceeding 1,000°C, even in oxidizing environments. When applied as TPV thermal emitters, Ta LaBS double electrical power output from 2.19 to 4.10 W cm −2 at 2,200°C while sustaining TPV conversion efficiencies above 30%. This versatile, largely material-independent technique offers a scalable and economically viable pathway to enhance emissivity for advanced thermal energy applications.

laser-blackened surfaces↗