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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Electron Spin-Polarization Dependent Damage to Chiral Amino Acid l-Histidine

The damage of approximately monolayer films of L-histidine by low-energy spin-polarized electrons (SPE) ejected from a magnetized cobalt substrate has been probed using X-ray photoelectron spectroscopy (XPS). Average damage cross sections for N-containing motifs of L-histidine are 25-30 and 2-5 Mb for zwitterions and neutral molecules, respectively. Here, the magnetization direction of the substrate, which controls the ejected SPE helicity, was reversed in situ, and statistically significant differences in the damage cross sections of 10-30% were measured between positive and negative electron helicities. This is the first measurement of spin dichroism (SD) in an amino acid. The differential cross sections suggest that inelastic scattering of SPE with chiral molecules could contribute to the persistence of one enantiomer vs the other under certain irradiation conditions, particularly for the zwitterionic species.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1998

Model-Trained Neural Networks and Electronic Holography Demonstrated to Detect Damage in Blades

Detect Damage in Blades Electronic holography can show damaged regions in fan blades at 30 frames/sec. The electronic holograms are transformed by finite-element-model-trained artificial neural networks to visualize the damage. The trained neural networks are linked with video and graphics to visualize the bending-induced strain distribution, which is very sensitive to damage. By contrast, it is very difficult to detect damage by viewing the raw, speckled, characteristic fringe patterns. For neural-network visualization of damage, 2 frames or 2 fields are used, rather than the 12 frames normally used to compute the displacement distribution from electronic holograms. At the NASA Lewis Research Center, finite element models are used to compute displacement and strain distributions for the vibration modes of undamaged and cracked blades. A model of electronic time-averaged holography is used to transform the displacement distributions into finite-element-resolution characteristic fringe patterns. Then, a feedforward neural network is trained with the fringe-pattern/strain-pattern pairs, and the neural network, electronic holography, and video are implemented on a workstation. Now that the neural networks have been tested successfully at 30 frames/sec on undamaged and cracked cantilevers, the electronic holography and neural-network processing are being adapted for onsite damage inspection of twisted fan blades and rotormounted blades. Our conclusion is that model-trained neural nets are effective when they are trained with good models whose application is well understood. This work supports the aeromechanical testing portion of the Advanced Subsonic Technology Project.

Decker, Arthur J.↗
NASA NTRS1990

Electron beam induced damage in PECVD Si3N4 and SiO2 films on InP

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗
NASA NTRS1994

Scaling craters in carbonates: Electron paramagnetic resonance analysis of shock damage

Carbonate samples from the 8.9-Mt nuclear (near-surface explosion) crater, OAK, and a terrestrial impact crater, Meteor Crater, were analyzed for shock damage using electron paramagnetic resonance (EPR). Samples from below the OAK apparent crater floor were obtained from six boreholes, as well as ejecta recovered from the crater floor. The degree of shock damage in the carbonate material was assessed by comparing the sample spectra to the spectra of Solenhofen and Kaibab limestone, which had been skocked to known pressures. Analysis of the OAK Crater borehole samples has identified a thin zone of allocthonous highly shocked (10-13 GPa) carbonate material underneath the apparent crater floor. This approx. 5- to 15-m-thick zone occurs at a maximum depth of approx. 125 m below current seafloor at the borehole, sited at the initial position of the OAK explosive, and decreases in depth towards the apparent crater edge. Because this zone of allocthonous shocked rock delineates deformed rock below, and a breccia of mobilized sand and collapse debris above, it appears to outline the transient crater. The transient crater volume inferred in this way is found to by 3.2 +/- 0.2 times 10(exp 6)cu m, which is in good agreement with a volume of 5.3 times 10(exp 6)cu m inferred from gravity scaling of laboratory experiments. A layer of highly shocked material is also found near the surface outside the crater. The latter material could represent a fallout ejecta layer. The ejecta boulders recovered from the present crater floor experienced a range of shock pressures from approx. 0 to 15 GPa with the more heavily shocked samples all occurring between radii of 360 and approx. 600 m. Moreover, the fossil content, lithology and Sr isotopic composition all demonstrate that the initial position of the bulk of the heavily shocked rock ejecta sampled was originally near surface rock at initial depths in the 32 to 45-m depth (below sea level) range. The EPR technique is also sensitive to prehistoric shock damage. This is demonstrated by our study of shocked Kaibab limestone from the 49,000-year-old Meteor (Barringer) Crater Arizona.

Polanskey, Carol A.↗
DOE OSTI2011

Radiolysis to knock-on damage transition in zeolites under electron beam irradiation

The electron-beam-induced damage in a zeolite under 60-200 keV energy beam irradiation has both radiolitic and knock-on components and can be described by linear superposition of these two processes. Theoretical predictions supported by experiments at 60 keV suggest that for electron beam energies smaller than 70 keV, the damage to the specimen follows a radiolitic path. For energies larger than 200 keV, knock-on based sputtering of the material will dominate, while considerable radiolitic movement of the atoms will still be present.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

In situ transmission electron microscopy of electron-beam induced damage process in nuclear grade graphite

Atomic level processes involved in the swelling and crack-closing in nuclear grade graphite under electron irradiation have been observed in real-time using transmission electron microscopy. Noise-filtered lattice images show the formation of vacancy loops, interstitial loops and resulting dislocations with unprecedented clarity. The dislocation dipoles formed via vacancy loops were found to undergo climb resulting in extra basal planes. Concurrent EELS studies showed a reduction in the atomic density because of the breakage of hexagonal carbon rings. The formation of new basal planes via dislocation climb in addition to the bending/breaking of basal planes leads to swelling and closing of micro-cracks.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2015

Soft x-ray free-electron laser induced damage to inorganic scintillators

An irreversible response of inorganic scintillators to intense soft x-ray laser radiation was investigated at the FLASH (Free-electron LASer in Hamburg) facility. Three ionic crystals, namely, Ce:YAG (cerium-doped yttrium aluminum garnet), PbWO4 (lead tungstate), and ZnO (zinc oxide), were exposed to single 4.6 nm ultra-short laser pulses of variable pulse energy (up to 12 μJ) under normal incidence conditions with tight focus. Damaged areas produced with various levels of pulse fluences, were analyzed on the surface of irradiated samples using differential interference contrast (DIC) and atomic force microscopy (AFM). The effective beam area of 22.2 ± 2.2 μm2 was determined by means of the ablation imprints method with the use of poly(methyl methacrylate) - PMMA. Applied to the three inorganic materials, this procedure gave almost the same values of an effective area. The single-shot damage threshold fluence was determined for each of these inorganic materials. The Ce:YAG sample seems to be the most radiation resistant under the given irradiation conditions, its damage threshold was determined to be as high as 660.8 ± 71.2 mJ/cm2. Contrary to that, the PbWO4 sample exhibited the lowest radiation resistance with a threshold fluence of 62.6 ± 11.9 mJ/cm2. The threshold for ZnO was found to be 167.8 ± 30.8 mJ/cm2. Both interaction and material characteristics responsible for the damage threshold difference are discussed in the article.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Electron beam induced damage in ITO coated Kapton

Data for the stability of thin conductive indium tin oxide films on 0.003 inch thick Kapton substrates during exposure of the surface to electron beams are reported. The electron beam energy was 3 keV and the diameter was about 0.8 mm. Thermal effects and surface modifications are considered. For primary current greater than 0.6 microamperes, an obvious dark discoloration with diameter approximately that of the beam was produced. The structure of the discolored region was studied with the scanning electron microscope, and the findings are stated. Surface modifications were explored by AES, obtaining spectra and secondary emission coefficient as a function of time for different beam intensities. In all cases beam exposure results in a decrease of the secondary yield but because of thermal effects this change, as well as composition changes, cannot be directly interpreted in terms of electron beam dosage.

Krainsky, I.↗
DOE OSTI2019

Reducing Radiation Damage Using Pulsed Electron Beams in the TEM

A rise in the development and the use of ultrashort-pulsed sources (i.e., femtosecond to picosecond) in transmission electron microscopes (TEMs) has led to numerous discoveries and paradigm tests of atomic to nanoscale structural dynamics well beyond the temporal limits of fast detectors. Vital to these advances are precise control over the electron emission process, typically via the photoelectric effect, or via temporal modulation of an initially continuous beam swept across an aperture. In addition to enabling ultrafast pump-probe experiments, fine control over the emission process allows for exploration of the effects of such pulsed beams on damage sustained by the specimen during observation. Unlike proposed diffract-before-destroy methods with electrons, these approaches would ideally be applied in the single-electron-per-packet regime, with sufficient time between the arrival of each electron at the specimen for all reversible energy-deposition events to fully recover. Indeed, some intriguing results using pulsed electron beams in TEMs have been reported here, including effects on the structure of catalyst particles and apparent prolonged exposures for polymer crystals

61 RADIATION PROTECTION AND DOSIMETRY↗
NASA NTRS1995

Electron and proton damage on InGaAs solar cells having an InP window layer

As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

Messenger, Scott R.↗
DOE OSTI2017

X-ray Free Electron Laser Radiation Damage through the S-State Cycle of the Oxygen-Evolving Complex of Photosystem II

The oxygen-evolving complex (OEC) catalyzes water-splitting through a reaction mechanism that cycles the OEC through the “S-state” intermediates. Understanding structure/function relationsships of the S-states is crucial for elucidating the water-oxidation mechanism. Serial femtosecond X-ray crystallography has been used to obtain radiation damage-free structures. However, it remains to be established whether “diffraction-before-destruction” is actually accomplished or if significant changes are produced by the high-intensity X-ray pulses during the femtosecond scattering measurement. Here, we use ab initio molecular dynamics simulations to estimate the extent of structural changes induced on the femtosecond time scale. We found that the radiation damage is dependent on the bonding and charge of each atom in the OEC, in a manner that may provide lessons for XFEL studies of other metalloproteins. The maximum displacement of Mn and oxygen centers is 0.25 and 0.39 Å, respectively, during the 50 fs pulse, which is significantly smaller than the uncertainty given the 1.9 Å resolution of the current PSII crystal structures. However, these structural changes might be detectable when comparing isomorphous Fourier differences of electron density maps of the different S-states. Lastly, one conclusion is that pulses shorter than 15 fs should be used to avoid significant radiation damage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1973

Temperature dependence of damage coefficient in electron irradiated solar cells

Measurements of light-generated current vs cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10-ohm and 20-ohm cells. A relationship between minority-carrier diffusion length and light-generated current was derived by combining measurements of these two parameters: vs fluence at room temperature, and vs cell temperature in cells irradiated to a fluence of 1 x 10 to the 15th power e/sq cm. This relationship was used, together with the light-generated current data, to calculate the temperature dependence of the diffusion-length damage coefficient. The results show a strong decrease in the damage coefficient with increasing temperature in the range experienced by solar panels in synchronous earth orbit.

Faith, T. J.↗
DOE OSTI2023

Pulsed-Beam Transmission Electron Microscopy and Radiation Damage

Here, we review the use of pulsed electron-beams in transmission electron microscopes (TEMs) for the purpose of mitigating specimen damage. We begin by placing the importance of TEMs with respect to materials characterization into proper context, and we provide a brief overview of established methods for reducing or eliminating the deleterious effects of beam-induced damage. We then introduce the concept of pulsed-beam TEM, and we briefly describe the basic methods and instrument configurations used to create so-called temporally structured electron beams. Following a brief overview of the use of high-dose-rate pulsed-electron beams in cancer radiation therapy, we review historical speculations and more recent compelling but mostly anecdotal findings of a pulsed-beam TEM damage effect. This is followed by an in-depth technical review of recent works seeking to establish cause-and-effect relationships, to conclusively uncover the presence of an effect, and to explore the practicality of the approach. These studies, in particular, provide the most compelling evidence to date that using a pulsed electron beam in the TEM is indeed a viable way to mitigate damage. Throughout, we point out current gaps in understanding, and we conclude with a brief perspective of current needs and future directions.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Electron knock-on damage in hexagonal boron nitride monolayers

We combine first-principles molecular-dynamics simulations with high-resolution transmission electron microscopy experiments to draw a detailed microscopic picture of irradiation effects in hexagonal boron nitride (h-BN) monolayers. We determine the displacement threshold energies for boron and nitrogen atoms in h-BN, which differ significantly from the tight-binding estimates found in the literature and remove ambiguity from the interpretation of the experimental results. We further develop a kinetic Monte Carlo model which allows to extend the simulations to macroscopic time scales and make a direct comparison between theory and experiments. Our results provide a comprehensive picture of the response of h-BN nanostructures to electron irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗