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Results for “electrical switches”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Methods and devices for non-invasive root phenotyping

The present disclosure provides for an electronic sensor for detecting a root of a plant in soil, the electronic sensor that includes a first conductor plate configured to be disposed in soil, a switch, a power supply, and a signal extractor. The switch is electrically coupled to the first conductor plate and is configured to switch between a first mode and a second mode. The power supply is electrically coupled to the switch and is configured to provide an electrical charge to the first conductor plate in the first mode of the switch. The signal extractor is electrically coupled to the switch and is configured to extract a signal response at the first conductor plate in the second mode of the switch. The present disclosure further provides a second conductor plate configured to be disposed in soil adjacent to and substantially parallel to the first conductor plate. The second conductor plate is electrically coupled to ground.

Benfey, Philip↗
NASA NTRS1980

JANTX/N1202A switching diode

General Electric and International Rectifier switching diodes were tested. Group 2 testing proved to be most damaging to both lots. In group 2 testing many visual failures were seen in samples from both manufacturers.

Source record↗
NASA NTRS2003

A Compact, Soft-Switching DC-DC Converter for Electric Propulsion

A hybrid, soft-switching, DC-DC converter has been developed with superior soft switching characteristics, high efficiency, and low electro-magnetic interference. This hybrid topology is comprised of an uncontrolled bridge operating at full pulse-width, and a controlled section operating as a conventional phase modulated converter. The unique topology is able to maintain zero voltage switching down to no load operating conditions. A breadboard prototype was developed and tested to demonstrate the benefits of the topology. Improvements were then made to reduce the size of passive components and increase efficiency in preparation for packaging. A packaged prototype was then designed and built, and several innovative packaging techniques are presented. Performance test data is presented that reveals deficiencies in the design of the power transformer. A simple redesign of the transformer windings eliminated the deficiency. Future plans to improve the converter and packaging design are presented along with several conclusions.

Button, Robert↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗
DOE OSTI2026

Switching speed limits in electrically driven VO 2 structural Mott–Peierls transition

Mott materials are archetypal quantum systems actively explored as next-generation electronic and photonic platforms, with potential applications spanning non-Von Neumann computing, robotics, energy storage, and microwave technologies. Among these, vanadium dioxide (VO 2 ) has emerged as one of the most intensively studied compounds, owing to its sharp, near-room-temperature insulator-to-metal phase transition. VO 2 also serves as a benchmark system for testing cutting-edge theories and experimental techniques. Here, we directly visualize the electrically driven transition dynamics in VO 2 using a microwave-driven, frequency-tunable pulsed transmission electron microscope that combines nanometer spatial and picosecond temporal resolution. Under high-frequency (MHz–GHz) excitation, we capture the ultrafast nucleation, propagation, and dissolution of metallic domains within an operating device over millions of reversible cycles. We observe the ultrafast formation of consistent metallic nuclei beneath the electrodes, followed by the propagation of a structural phase front at 4.54 nm/ns. Our experiments show that phonon-mediated structural recovery ultimately limits reversible switching of VO 2 at GHz frequencies, and that a tunable regime for reversible operation spans from kHz to GHz through device engineering. Beyond VO 2 , our approach provides a powerful framework for probing non-equilibrium structural transformations in correlated and functional materials under realistic electrical stimuli.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS 2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1981

Switching Transistor

Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

Source record↗
DOE OSTI2025

Flux-Switching Machine Based All-Electric Power Train for Future Aircraft

This research investigates a flux-switching motor with superconducting and cryogenically cooled windings, aimed at achieving exceptionally high power densities. In addition to the motor’s topology and superconducting windings, it was found that power density could be further enhanced by incorporating superconducting shields on the rotor at the interpole locations. The resulting publications and patented technology outline the design process. A motor power density of 64 kW/kg—including housing materials—was achieved for a 1 MW design, surpassing the performance of existing motors. An electronic drive was also developed, achieving a power density of 47 kW/kg. This includes the mechanical structure of the drivetrain, for which a detailed CAD model was created, resulting in an overall drivetrain power density of 27 kW/kg.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

Evidence for In-Plane Electrical Polarization in 3R-β’-In 2 Se 3 Thin Films Grown by Molecular Beam Epitaxy

β-In 2 Se 3 has been identified as a potential ferroelectric. This work describes the growth of β-In 2 Se 3 via molecular beam epitaxy along with a description of its properties, including the search for switchable polarization in 3R-β’-In2Se3. The thin-film morphology, crystal structure, and phase maps of β-In 2 Se 3 on Si(111) and Al 2 O 3 (0001) were evaluated by atomic force microscopy, X-ray diffraction, and Raman spectroscopy as a function of the atomic Se/In flux ratio and growth temperature. Smooth β-In 2 Se 3 thin films were successfully realized on Si(111) at a substrate temperature of 150 °C using a Se/In flux ratio of 5.7, as well as on Al 2 O 3 (0001) at 450 °C using a Se/In flux ratio of 5.5. Scanning transmission electron microscopy (STEM) confirms the 3R polytype of β-In 2 Se 3 in films on both substrates, with a minor disorder associated with the 2H polytype at the interface. Indications of in-plane Se atom displacements characteristic of the 3R-β’-In 2 Se 3 polytype were found by STEM and second harmonic generation analysis in films on Al 2 O 3 (0001), but not in films on Si(111). Furthermore, attempts at electrical polarization switching did not produce compelling evidence for ferroelectricity. Instead, electrical transport measurements demonstrated locally varying anisotropic responses with the applied electric fields along different in-plane directions, with some hysteresis associated with the trapping of charges.

36 MATERIALS SCIENCE↗
NASA NTRS2014

A Piezoelectric Cryogenic Heat Switch

We have measured the thermal conductance of a mechanical heat switch actuated by a piezoelectric positioner, the PZHS (PieZo electric Heat Switch), at cryogenic temperatures. The thermal conductance of the PZHS was measured between 4 K and 10 K, and on/off conductance ratios greater than 100 were achieved when the positioner applied its maximum force of 8 N. We discuss the advantages of using this system in cryogenic applications, and estimate the ultimate performance of an optimized PZHS.

Low temperature physics↗
NASA NTRS1992

Fast optical switch having reduced light loss

An electrically controlled optical switch uses an electro-optic crystal of the type having at least one set of fast and slow optical axes. The crystal exhibits electric field induced birefringence such that a plane of polarization oriented along a first direction of a light beam passing through the crystal may be switched to a plane of polarization oriented along a second direction. A beam splitting polarizer means is disposed at one end of the crystal and directs a light beam passing through the crystal whose plane of polarization is oriented along the first direction differently from a light beam having a plane of polarization oriented along the second direction. The electro-optic crystal may be chosen from the crystal classes 43m, 42m, and 23. In a preferred embodiment, the electro-optic crystal is a bismuth germanium oxide crystal or a bismuth silicon oxide crystal. In another embodiment of the invention, polarization control optics are provided which transmit substantially all of the incident light to the electro-optic crystal, substantially reducing the insertion loss of the switch.

Nelson, Bruce N.↗
NASA NTRS1994

Generating Submillimeter-Wave Frequencies From Laser Pulses

Semiconductor photoconductive switches generate electrical pulses containing submillimeter-wavelength carrier signals (frequency between 300 and 3,000 GHz) and harmonics thereof when illuminated with short-rise-time pulses from lasers. Device of this type used as local oscilator in heterodyne submillimeter-wave receiver. Electrical output of device coupled via transmission line, waveguide, or antenna to mixer circuitry of receiver. Phase delays between optically activated semiconductor switches determine output carrier frequencies. N electrical pulses generated by each laser pulse. Thus, fundamental output frequency is N times laser-pulse-repetition rate.

Spencer, Michael G.↗