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Report evaluates effects of power and temperature overstress on Motorola and Siemens devices. Reverse bias leakage maximum limit failure and Zener-breakdown maximum limit failure were common. Other failures are described.
Displacement damage effects from protons and neutrons are compared. Differences in the annealing properties were observed which are due to the different microscopic structure of the damaged regions from the two ty pes of particles.
Gas analyzer to determine effects of gas impurities on cesium diodes
Mercury or cadmium seeding effects on performance of cesium plasma diodes, obtaining plasma electron temperature from mathematical model
We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.
This study explores the effect of molecular permanent dipole moment (PDM) on aggregation of guest molecules in phosphorescent host–guest organic light-emitting diodes (OLEDs). Through a combination of photoluminescence measurements, high-angle annular dark-field scanning transmission electron microscopy analysis, and an Ising model based physical vapor-deposition simulation, we show that higher PDM of tris[2-phenylpyridinato-C2,N]iridium(III) guest can actually lead to a reduced aggregation relative to tris[bis[2-(2-pyridinyl-N)phenyl-C] (acetylacetonato)iridium(III) when doped into a non-polar host 1,3,5-tris(carbazol-9-yl)benzene. This study further explores the effect of host polarity by using a polar host 3′,5′-di(carbazol-9-yl)-[1,1′-biphenyl]-3,5-dicarbonitrile, and it is shown that the polar host leads to reduced guest aggregation. In conclusion, this study provides a comprehensive understanding of the impact of molecular PDM on OLED material efficiency and stability, providing insights for optimizing phosphorescent OLED materials.
Effects of nuclear radiation on performance of diodes for use in SNAP 8
The authors present the results of a method for frequency stabilizing laser diodes based on the resonant Faraday effects. A Faraday cell in conjunction with a polarizer crossed with respect to the polarization of the laser diode comprises the intracavity frequency selective element. In this arrangement, a laser pull-in range of 9 A was measured, and the laser operated at a single frequency with a linewidth less than 6 MHz.
Consideration of the effect of the ideality factor on the high-frequency noise emission from diodes. Noise measurements on Schottky barriers and n-n heterojunction diodes are presented as verification of the theory over a range of ideality factors. The requirements for low-noise diodes are outlined.
A comparison of measured and predicted signal-to-noise ratio is made in an optical heterodyne spectrometer utilizing a tunable diode laser which exhibited excess noise. It is shown that good agreement between predicted and measured signal-to-noise ratios results if excess noise effects due to tunable diode lasers are included in the predictions. The methods used to quantify excess noise and to incorporate their effects into predictions of signal-to-noise ratio are discussed.
This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.
Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.
In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.
The effects of nuclear radiation on the reverse bias electrical characteristics of one hundred silicon power diodes were investigated. On a percentage basis, the changes in reverse currents were large but, due to very low initial values, this electrical characteristic was not the limiting factor in use of these diodes. These changes were interpreted in terms of decreasing minority carrier lifetimes as related to generation-recombination currents. The magnitudes of reverse voltage breakdown were unaffected by irradiation.
Abstract The short operational lifetimes of high efficiency phosphorescent organic blue light emitting devices (PHOLEDs) has limited their use in displays and lighting. Previously, this problem has been avoided by using less efficient fluorescent blue devices in separately biased red, green, and blue emissive elements to achieve stable full color emission. However, the operational lifetime of blue phosphorescent OLEDs has been significantly improved through the utilization of the plasmon‐exciton‐polariton‐enhanced (PEP) Purcell effect. Here, a white emitting PHOLED comprising stacked red, green, and blue elements is demonstrated that exploits PEPs to extend the operational lifetime of the blue element such that all emissive layers degrade at the same rate. The device features white light emission with an external quantum efficiency of 19.1 ± 0.4%, luminous power efficiency of 13.3 ± 0.3 lm W −1 at a luminance of 1000 cd m −2 when measured over 4π solid angle, with a color rendering index of 76 unchanged throughout the device aging to 70% of its initial luminance, T 70 . A 2.9 times enhancement in the operational lifetime of the Purcell‐enhanced device is achieved to yield T 70 = 2900 ± 100 h for an initial luminance of 1000 cd m −2 , compared to devices lacking this enhancement with T 70 = 1000 ± 100 h.
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