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At least 109 records · Page 6

Periodic Excitation for Jet Vectoring and Enhanced Spreading

The effects of periodic excitation on the evolution of a turbulent jet were studied experimentally. A short, wide-angle diffuser was attached to the jet exit and excitation was introduced at the junction between the jet exit and the diffuser inlet. The introduction of high amplitude periodic excitation at the jet exit enhances the mixing and promotes attachment of the jet shear-layer to the diffuser wall. Vectoring is achieved by applying the excitation over a fraction of the circumference of the circular jet, enhancing its spreading rate on the excited side and its tendency to reattach to that side. Static deflection studies demonstrate that the presence of the wide-angle diffuser increases the effectiveness of the added periodic momentum due to a favorable interaction between the excitation, the jet shear-layer and the diffuser wall. This point was further demonstrated by the evolution of a wave packet that was excited in the jet shear-layer. Strong amplification of the wave packet was measured with a diffuser attached to the jet exit. The turbulent jet responds quickly (10-20 msec) to step changes in the level of the excitation input. The response scales with the jet exit velocity and is independent of the Reynolds number. Jet deflection angles were found to be highly sensitive to the relative direction between the excitation and the jet flow and less sensitive to the excitation frequency. The higher jet deflection angles were obtained for a diffuser length of about two diameters and for diffusers with half-angles greater than 15 degrees.

Pack, LaTunia G.↗

On the localized nature of the Galactic cosmic rays

The escape of cosmic rays from the Galaxy at rigidities above and below 10 GV/c is investigated theoretically using a model with a diffusion coefficient of (1-10) x 10 to the 26th sq cm/sec (at 10 GV/c) and various values of the exponent delta. Some numerical results are presented in graphs, and it is found that at low energies the source nearest to the earth is at a distance of 100-300 pc, while the higher-energy diffusion length is 1-10 kpc (assuming in both cases that the diffusive medium is homogeneous and has a characteristic size greater than the respective lengths). For the case of a smaller storage volume, the lifetime to reach the boundary is inversely proportional to kappa.

Ormes, J. F.↗

Performance Evaluation of Fixed- and Variable-Area Rocket Exhaust Diffusers Using Single and Clustered Nozzles with and Without Gimbaling

An investigation of exhaust diffusers used for altitude simulation in testing rocket engines was conducted with model diffusers and gaseous nitrogen as the working fluid. This investigation was conducted to eval­uate the effects on performance of gimbaling clustered nozzles in a single fixed-area exhaust diffuser. A two-nozzle cluster was gimbaled in all attitudes in four different exhaust-diffuser configurations: (1) a straight circular tube, (2) a straight figure-eight tube, (3) a circular tube with a second throat, and (4) a figure-eight tube with a second throat. Gimbaling clustered nozzles had little effect on the operating pressure ratio for either straight-tube or second-throat diffusers, but caused a large increase in the starting-pressure-ratio requirements in some straight-tube exhaust diffusers. The performance of two or four clustered nozzles with no gimbaling was compared with single-nozzle per­formance on the basis of the ratio of diffuser area to nozzle-throat area. The performance was found to be dependent on the diffuser- to nozzle-throat-area ratio and independent of both the number of primary nozzles and the nozzle-area ratio. A separate investigation was also conducted to evaluate the per­formance improvement obtainable with a variable-area exhaust diffuser. This type of diffuser achieved a 26-percent reduction in starting pressure ratio, a 40-percent reduction in operating pressure ratio, and a 50-percent reduction in the overall diffuser length over the values attainable with a fixed-area second-throat diffuser.

ROCKET↗

A study of efficiency in low resistivity silicon solar cells

A general device-analysis program has been utilized to study the efficiency of silicon solar cells. The analysis is applied to specific geometries of both n(+)-p and n(+)-p-p(+) solar cells, and involves a numerical solution of the basic transport and continuity equations. This approach allows solutions that are free of typical limiting assumptions involved in solving the device equations as well as solutions relating to lifetime, mobility variations, and diffused-region profiles. The analysis includes available empirical information on diffusion length, mobility, and lifetime as a function of doping, as well as a Gaussian profile for the diffused region. Results are presented which illustrate the limitations of efficiency as a function of doping. It is found that the maximum efficiencies for both types of cell converge at lower resistivities to around 16% with air-mass-zero radiation and a single-layer absorbing-SiO antireflecting film. It is also found that the minority-carrier lifetime, both in the n(+) surface and p-type bulk regions, presents serious limitations to conversion efficiency, particularly in the low-resistivity cells.

Dunbar, P. M.↗

Analytical and experimental studies of a short compact subsonic diffuser for a two-dimensional supersonic inlet

An experimental study of a two-dimensional supersonic inlet with a short compact subsonic diffuser, length to exit diameter (dl/d) ratio of 1.25, was conducted to investigate the impact of the short diffuser on inlet performance at low speeds and to assess the diffuser subsonic performance for a simulated diffuser flow corresponding to high-speed inlet conditions near the design flight Mach number of 2.2. For the low-speed testing, a drooped lip was employed to improve the inlet performance at a high angle of attack. For the simulated high-speed testing, air was blown through slots or discrete nozzles as an active boundary-layer control. The results from the low-speed performance test were compared with the results from a previous test program on the same inlet with a long subsonic diffuser (dl/d = 4.5). The comparison indicates that inlet recovery was not affected by the use of the short diffuser for either the baseline (no droop) or the drooped cowl lip configuration. However, the inlet baseline distortion for the short diffuser configuration was substantially higher than for the long diffuser. A comparison of the two configurations with a 70 deg drooped lip showed no significant difference in distortion. For the portion of the experimental program in which diffuser conditions for high-speed flight were simulated, diffuser-induced flow separation occurred. This separation was predicted from an analytical study that used the Hess potential flow panel method and the Herring two-dimensional boundary-layer analysis computer codes. The flow separated mainly on the diffuser ramp. Subsequent tests in which boundary-control systems were utilized showed that blowing with either slots or discrete nozzles could suppress the flow separation in the short subsonic diffuser, thereby substantially improving the diffuser performance.

Iek, Chanthy↗

Solar cell calibration techniques

Solar cell calibration techniques - measurements of absolute quantum yields, surface reflection losses, diffusion lengths, and junction properties

CALIBRATION↗

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Weizer, V. G.↗

The effect of diffusion induced lattice stress on the open-circuit voltage in silicon solar cells

It is demonstrated that diffusion induced stresses in low resistivity silicon solar cells can significantly reduce both the open-circuit voltage and collection efficiency. The degradation mechanism involves stress induced changes in both the minority carrier mobility and the diffusion length. Thermal recovery characteristics indicate that the stresses are relieved at higher temperatures by divacancy flow (silicon self diffusion). The level of residual stress in as-fabricated cells was found to be negligible in the cells tested.

Weizer, V. G.↗

Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs

The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

Partin, D. L.↗

Growth morphology with anisotropic surface kinetics

The morphological evolution of crystals growing from an incongruent vapor phase is studied using a Monte Carlo model, and the full range of growth morphologies is recovered. The diffusion in the bulk nutrient and the anisotropy in the interface kinetics are morphologically destabilizing and stabilizing, respectively. For a given set of simulation parameters and lattice symmetries there is a critical size, which scales linearly with the mean free path in the vapor, beyond which a crystal cannot retain its stable, macroscopically faceted growth shape. Surface diffusion stabilizes faceted growth on the shorter scale of the mean surface diffusion length. In simulations with a uniform drift superimposed on the random walk nutrient transport, crystal faces oriented toward the drift show enhanced morphological stability compared to the purely diffusive situation. Rotational drifts with periodic reversal of direction are morphologically stabilizing for all crystal facets.

Xiao, Rong-Fu↗

Stress studies in edge-defined film-fed growth of silicon ribbons

Stress and efficiency studies on sheet silicon are reported. It was found that the bulk diffusion length of stressed float zone and Czochralski silicon is limited by point defect recombination to about 20 micrometers in dislocation free regions after high temperature heat treatment and stress application. If in-diffusion by iron occurs, dislocations, carbon and oxygen, do not produce significant gettering with annealing. Further work ideas are suggested.

Kalejs, J.↗

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

Validation of a Computational Model for the SLS Core Stage Oxygen Tank Diffuser Concept and the Low Profile Diffuser - An Advanced Development Design for the SLS

The Low Profile Diffuser (LPD) project originated as an award from the Marshall Space Flight Center (MSFC) Advanced Development (ADO) office to the Main Propulsion Systems Branch (ER22). The task was created to develop and test an LPD concept that could produce comparable performance to a larger, traditionally designed, ullage gas diffuser while occupying a smaller volume envelope. Historically, ullage gas diffusers have been large, bulky devices that occupy a significant portion of the propellant tank, decreasing the tank volume available for propellant. Ullage pressurization of spacecraft propellant tanks is required to prevent boil-off of cryogenic propellants and to provide a positive pressure for propellant extraction. To achieve this, ullage gas diffusers must slow hot, high-pressure gas entering a propellant tank from supersonic speeds to only a few meters per second. Decreasing the incoming gas velocity is typically accomplished through expansion to larger areas within the diffuser which has traditionally led to large diffuser lengths. The Fluid Dynamics Branch (ER42) developed and applied advanced Computational Fluid Dynamics (CFD) analysis methods in order to mature the LPD design from and initial concept to an optimized test prototype and to provide extremely accurate pre-test predictions of diffuser performance. Additionally, the diffuser concept for the Core Stage of the Space Launch System (SLS) was analyzed in a short amount of time to guide test data collection efforts of the qualification of the device. CFD analysis of the SLS diffuser design provided new insights into the functioning of the device and was qualitatively validated against hot wire anemometry of the exterior flow field. Rigorous data analysis of the measurements was performed on static and dynamic pressure data, data from two microphones, accelerometers and hot wire anemometry with automated traverse. Feasibility of the LPD concept and validation of the computational model were demonstrated by the test data.

Brodnick, Jacob↗

New high-efficiency silicon solar cells

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies.

Daud, T.↗

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 ohm-cm silicon solar cells

An experimental method is presented that can be used to interpret the relative roles of bandgap narrowing and recombination processes in the diffused layer. This method involves measuring the device time constant by open-circuit voltage decay and the base region diffusion length by X-ray excitation. A unique illuminated diode method is used to obtain the diode saturation current. These data are interpreted using a simple model to determine individually the minority carrier lifetime and the excess charge. These parameters are then used to infer the relative importance of bandgap narrowing and recombination processes in the diffused layer.

Godlewski, M. P.↗

Fluid Physics in a Fluctuating Acceleration Environment

Our program of research aims at developing a stochastic description of the residual acceleration field onboard spacecraft (g-jitter) to describe in quantitative detail its effect on fluid motion. Our main premise is that such a statistical description is necessary in those cases in which the characteristic time scales of the process under investigation are long compared with the correlation time of g-jitter. Although a clear separation between time scales makes this approach feasible, there remain several difficulties of practical nature: (i), g-jitter time series are not statistically stationary but rather show definite dependences on factors such as active or rest crew periods; (ii), it is very difficult to extract reliably the low frequency range of the power spectrum of the acceleration field. This range controls the magnitude of diffusive processes; and (iii), models used to date are Gaussian, but there is evidence that large amplitude disturbances occur much more frequently than a Gaussian distribution would predict. The lack of stationarity does not constitute a severe limitation in practice, since the intensity of the stochastic components changes very slowly during space missions (perhaps over times of the order of hours). A separate analysis of large amplitude disturbances has not been undertaken yet, but it does not seem difficult a priori to devise models that may describe this range better than a Gaussian distribution. The effect of low frequency components, on the other hand, is more difficult to ascertain, partly due to the difficulty associated with measuring them, and partly because they may be indistinguishable from slowly changing averages. This latter effect is further complicated by the lack of statistical stationarity of the time series. Recent work has focused on the effect of stochastic modulation on the onset of oscillatory instabilities as an example of resonant interaction between the driving acceleration and normal modes of the system, and on cavity flow as an example of how an oscillatory response under periodic driving becomes diffusive if the forcing is random instead. This paper describes three different topics that illustrate behavior that is peculiar to a stochastic acceleration field. In the first case, we show that g-jitter can induce effective attractive or repulsive forces between a pair of spherical particles that are suspended in an incompressible fluid of different density provided that the momentum diffusion length is larger than the interparticle separation (as in the case in most colloidal suspensions). Second, a stochastic modulation of the control parameter in the vicinity of a pitchfork or supercritical bifurcation is known not to affect the location of the threshold. We show, however, that resonance between the modulation and linearly stable modes close to onset can lead to a shift in threshold. Finally, we discuss the classical problem of vorticity diffusion away from a plane boundary that is being vibrated along its own plane. Periodic motion with zero average vorticity production results in an exponential decay of the vorticity away from the boundary. Random vibration, on the other hand, results in power law decay away from the boundary even if vorticity production averages to zero.

Drolet, Francois↗

Effects of high doping levels on silicon solar cell performance

Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.

Godlewski, M. P.↗