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Impact of Humidity and Temperature on the Stability of the Optical Properties and Structure of MAPbI3, MA0.7FA0.3PbI3 and (FAPbI3)0.95(MAPbBr3)0.05 Perovskite Thin Films

In situ real-time spectroscopic ellipsometry (RTSE) measurements have been conducted on MAPbI3, MA0.7FA0.3PbI3, and (FAPbI3)0.95(MAPbBr3)0.05 perovskite thin films when exposed to different levels of relative humidity at given temperatures over time. Analysis of RTSE measurements track changes in the complex dielectric function spectra and structure, which indicate variations in stability influenced by the underlying material, preparation method, and perovskite composition. MAPbI3 and MA0.7FA0.3PbI3 films deposited on commercial fluorine-doped tin oxide coated glass are more stable than corresponding films deposited on soda lime glass directly. (FAPbI3)0.95(MAPbBr3)0.05 films on soda lime glass showed improved stability over the other compositions regardless of the substrate, and this is attributed to the preparation method as well as the final composition.

36 MATERIALS SCIENCE↗

Space Sciences Division

Spacecraft instrumentation, biological sampling of Martian soil, Jupiter red spot data and solar wind variations, dielectric function of cold electron gas, and microwave spectra of ion radical

Source record↗

Surface plasmons in thin films.

Dispersion relations for surface plasma oscillations in normal metals for single and multiple films taking into account retardation effects, noting dielectric function

Economou, E. N.↗

Thermodynamics of hydrogen-helium mixtures at high pressure and finite temperature

A technique is reviewed for calculating thermodynamic quantities for mixtures of light elements at high pressure, in the metallic state. Ensemble averages are calculated with Monte Carlo techniques and periodic boundary conditions. Interparticle potentials are assumed to be coulombic, screened by the electrons in dielectric function theory. This method is quantitatively accurate for alloys at pressures above about 10 Mbar. An alloy of equal parts hydrogen and helium by mass appears to remain liquid and mixed for temperatures above about 3000 K, at pressures of about 15 Mbar. The additive volume law is satisfied to within about 10%, but the Gruneisen equation of state gives poor results. A calculation at 1300 K shows evidence of a hydrogen-helium phase separation.

Hubbard, W. B.↗

Low-temperature thermostatics of face-centered-cubic metallic hydrogen

The thermostatic properties of a high-symmetry phase of metallic hydrogen with atomic sphere radius between 0.1 and 1.5 bohr are studied, with special emphasis accorded to electronic screening and quantum proton motion. The electron-proton and proton-proton interactions receive a perturbation treatment based on the Singwi dielectric function, while the proton motion is handled by self-consistent harmonic approximation. Quantum behavior is found to be less pronounced than expected, and nuclear magnetism is absent. The phonon spectrum is, however, affected by screening and large proton motion. The zero-point vibrational energy and the superconducting critical temperature are below previous estimates. The crystalline-defect formation energies are a few times the Debye energy, which implies that defects contribute significantly to melting at the lower particle densities.

Caron, L. G.↗

On the lattice dynamics of metallic hydrogen and other Coulomb systems

Numerical results for the phonon spectra of metallic hydrogen and other Coulomb systems in cubic lattices are presented. In second order in the electron-ion interaction, the behavior of the dielectric function of the interacting electron gas for arguments around the seond Fermi harmonic leads to drastic Kohn anomalies and even to imaginary phonon frequencies. Third-order band-structure corrections are also calculated. Properties of self-consistent phonons and the validity of the adiabatic approximation are discussed.

Beck, H.↗

Space radiation interaction mechanisms in materials

Models of charged-particle impact under conditions typical of the space environment are reported, with a focus on impact excitation and nuclear reactions, especially for heavy ions. Impact excitation is studied by using a global model for electronic excitation based on formal relations through the classical dielectric function to derive an approximation related to the local plasma (electron density distribution) within the atoms and molecules; and corrections to the model resulting from the nonfluid nature of this plasma are discussed. Nuclear reactions are studied by reducing quantum-mechanical treatment of this general N-body problem to an equivalent two-body problem that is solvable, and by comparing the results with experimental data. The equations for heavy-charged-particle transport are derived and solution techniques demonstrated. Finally, these methods of analysis are applied to study the change in the electrical properties of a GaAs semiconductor for photovoltaic applications; proton damage to GaAs crystals is found to arise from stable replacement defects and to be nonannealable, in contrast to electron-induced damage.

Wilson, J. W.↗

Statistical mechanics of light elements at high pressure. VII - A perturbative free energy for arbitrary mixtures of H and He

A model free energy is presented which accurately represents results from 45 high-precision Monte Carlo calculations of the thermodynamics of hydrogen-helium mixtures at pressures of astrophysical and planetophysical interest. The free energy is calculated using free-electron perturbation theory (dielectric function theory), and is an extension of the expression given in an earlier paper in this series. However, it fits the Monte Carlo results more accurately, and is valid for the full range of compositions from pure hydrogen to pure helium. Using the new free energy, the phase diagram of mixtures of liquid metallic hydrogen and helium is calculated and compared with earlier results. Sample results for mixing volumes are also presented, and the new free energy expression is used to compute a theoretical Jovian adiabat and compare the adiabat with results from three-dimensional Thomas-Fermi-Dirac theory. The present theory gives slightly higher densities at pressures of about 10 megabars.

Hubbard, W. B.↗

Electrostatic instabilities of velocity-space-shell distributions in magnetized plasmas

Electron instabilities of magnetized spherical shell distributions in velocity space with a colder Maxwellian background are investigated analytically with simulations using electrostatic particle codes. The resonant and nonresonant instabilities observed in the particle simulations are in agreement with zeros of the dielectric function, as found from the resonant approximations for waves with an electric field component along the magnetic field or by computation with a root solver code in the case of perpendicular propagation. Saturation of the instabilities is by nonlinear cyclotron resonance with the cold background in the resonant case or by nonstochastic cyclotron harmonic damping by the cold background in the nonresonant case. Instabilities invariably lead to perpendicular acceleration and heating of the cold background to velocities sometimes exceeding the shell velocity.

Sentman, D. D.↗

Magnetic fields and stardust

The purpose of this paper is to outline the principles governing the use of far-infrared and submillimeter polarimetry to investigate magnetic fields and dust in interstellar clouds. Particular topics of discussion are the alignment of dust grains in dense clouds, the dependence on wavelength of polarization due to emission or to partial absorption by aligned grains, the nature of that dependence for mixtures of grains with different properties, and the problem of distinguishing between (1) the effects of the shapes and dielectric functions of the grains and (2) the degree and direction of their alignment.

Hildebrand, Roger H.↗

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗

Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

Alterovitz, S. A.↗

Light scattering by nonspherical particles - A refinement to the coupled-dipole method

In the coupled-dipole method, an arbitrary particle is modeled as an array of N polarizable subunits, each of which gives rise to only electric dipole radiation. The Clausius-Mosotti relation is widely used to calculate the polarizability of the subunits that correspond to the dielectric function of the particle that the array represents. The Clausius-Mosotti relation is replaced here with an exact expression for the electric dipole polarizability, and improvement is found in extinction calculations for spheres as compared with Mie theory. Near a Froehlich frequency the coupled-dipole method yields extinction cross sections for spheres and spheroids that compare favorably with the continuous distribution of ellipsoids method and measured values.

Dungey, Clifton E.↗

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, S. A.↗