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NASA NTRS2014

Si-Ge Nano-Structured with Tungsten Silicide Inclusions

Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

thermoelectricity↗

NASA NTRS2015

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

Thermoelectric Power Generation↗

NASA NTRSDate not supplied

Seeking & Evaluating Applications of SAWs (SEASAWs)

Surface Acoustic Wave sensors (SAWs) offer a battery less, wireless, passive, noninvasive, durable means of sensing which might be appealing to many fields in space technology. Developments in many aspects of SAWs including the miniaturization of associated hardware, improvements in interrogation and device fabrication / characterization allow for the use of SAWs in many aerospace settings where traditional sensors may have sufficed but SAWs might enhance. In order to place this technology in relevant environments, an inherent understanding of operation and capabilities must be understood. With the many possibilities of SAWs in their implementation, breaking down their tradeoffs and primary systems allows for their application.

Michael Szostak↗

NASA NTRS2018

Single Event Effect Testing of the Analog Devices ADXL354 3-Axis MEMS Accelerometer

The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.

Single-Event Effect (SEE)↗

NASA NTRS2020

AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.

Megan Casey↗

NASA NTRS2018

Analog Devices ADXL354 Low Noise, Low Drift, Low Power, 3-Axis MEMS Accelerometer Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.

Total Ionizing Dose (TID)↗

NASA NTRSDate not supplied

A Simple Model for Rotating Detonation Rocket Engine Sizing and Performance Estimates

A Rotating Detonation Rocket Engine (RDRE) model is described which characterizes the device as an essentially infinite number of circumferentially arranged, sequentially firing pulse detonation engine (PDE) tubes. The PDE tubes are in turn treated as lumped-parameter chambers, each of which executes a dynamic (i.e. time dependent) Atkinson cycle with an allowance for a finite Mach number during the refill portion of the cycle. The formulation results in several free parameters which are used to essentially tune the model such that it closely matches higher fidelity computational fluid dynamic RDRE simulations in terms of performance, flow rates, etc. The simplicity of the model allows for straightforward combination with component models (e.g. turbopumps, cooling jackets, etc.) as well as implementation within larger vehicle simulations. Such capability allows for realistic mission analyses and benefits studies which will help to determine the best application for the RDRE concept.

detonation↗

NASA NTRSDate not supplied

A Simple Model for Rotating Detonation Rocket Engine Sizing and Performance Estimates

detonation↗

NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗

NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗

NASA NTRS2014

NEPP DDR Device Reliability FY13 Report

This document reports the status of the NEPP Double Data Rate (DDR) Device Reliability effort for FY2013. The task targeted general reliability of > 100 DDR2 devices from Hynix, Samsung, and Micron. Detailed characterization of some devices when stressed by several data storage patterns was studied, targeting ability of the data cells to store the different data patterns without refresh, highlighting the weakest bits. DDR2, Reliability, Data Retention, Temperature Stress, Test System Evaluation, General Reliability, IDD measurements, electronic parts, parts testing, microcircuits

Guertin, Steven M.↗

NASA NTRS2011

Implications of Weak Link Effects on Thermal Characteristics of Transition-Edge Sensors

Weak link behavior in transition-edge sensor (TES) devices creates the need for a more careful characterization of a device's thermal characteristics through its transition. This is particularly true for small TESs where a small change in the measurement current results in large changes in temperature. A highly current-dependent transition shape makes accurate thermal characterization of the TES parameters through the transition challenging. To accurately interpret measurements, especially complex impedance, it is crucial to know the temperature-dependent thermal conductance, G(T), and heat capacity, C(T), at each point through the transition. We will present data illustrating these effects and discuss how we overcome the challenges that are present in accurately determining G and T from IV curves. We will also show how these weak link effects vary with TES size.

Bailey, Catherine↗

NASA NTRS1991

High-temperature superconducting superconductor/normal metal/superconducting devices

We describe the fabrication and characterization of superconductor/normal metal/superconductor (SNS) devices made with the high-temperature superconductor (HTS) YBa2Cu3O(7-x). Structures of YBa2Cu3O(7-x)/Au/Nb on c-axis-oriented YBa2Cu3O(7-x) were made in both sandwich and edge geometries in order to sample the HTS material both along and perpendicular to the conducting a-b planes. These devices display fairly ideal Josephson properties at 4.2 K. In addition, devices consisting of YBa2Cu3O(7-x)/YBa2Cu3O(y)/YBa2Cu3O(7-x), with a 'normal metal' layer of reduced transition temperature YBa2Cu3O(7-x) were fabricated and show a great deal of promise for applications near 77 K. Current-voltage characteristics like those of the Resistively-Shunted Junction model are observed, with strong response to 10 GHz radiation above 60 K.

Foote, M. C.↗

NASA NTRS1987

APS-Workshop on Characterization of MMIC (Monolithic Microwave Integrated Circuit) Devices for Array Antenna

The IEEE AP-S ADCOM is attempting to expand its educational, tutorial and information exchange activities as a further benefit to all members. To this end, ADCOM will be forming specialized workshops on topics of interest to its members. The first such workshop on Characterization and Packaging of MMIC Devices for Array Antennas was conceived. The workshop took place on June 13, 1986 as part of the 1986 International Symposium sponsored by IEEE AP-S and URSI in Philadelphia, PA, June 9-13, 1986. The workshop was formed to foster the interchange of ideas among MMIC device users and to provide a forum to collect and focus information among engineers experienced and interested in the topic. After brief presentations by the panelists and comments from attendees on several subtopics, the group was divided into working committees. Each committee evaluated and made recommendations on one of the subtopics.

Smetana, Jerry↗

NASA NTRS2010

NEPP non-volatile memory : FY09 summary report

This report documents the activities and results of the fiscal year 2009 (FY09) funding for the NASA Electronic Parts and Packaging (NEPP) program for non-volatile memory (NVM) devices. The FY09 task was divided into two main efforts: 1. Development of in-house measurement capability for flash devices 2. Reliability characterization of multi-level vs. single-level flash devices The FY09 NEPP Non Volatile Memory study was organized into these two sections in recognition of the continued and increasing importance of NVM to NASA. All NASA missions use NVM for boot code storage and some limited data archiving. Space-grade NVM has lagged commercial NVM development by many orders of magnitude, however. This gap in density only continues to increase as space-grade memories remain constant in the 1–16 Mbit levels, while commercial flash-based devices shrink in size and double in capacity every 18 months. Commercial flash devices are now at the 32 Gbit level, 10,000 times denser than current NASA NVM. This FY marks the beginning of a significant technological transition in NVM for NASA. The aggressive scaling of commercial NVMs has, as a by-product, made some of the flash devices radiation-tolerant enough to be at least considered for low-level radiation environment missions [Irom 2008]. This NEPP task is focused on understanding the reliability and potential future applications of such highly scaled flash memories.

Heidecker, Jason↗

NASA NTRS2013

FY12 End of Year Report for NEPP DDR2 Reliability

This document reports the status of the NEPP Double Data Rate 2 (DDR2) Reliability effort for FY2012. The task expanded the focus of evaluating reliability effects targeted for device examination. FY11 work highlighted the need to test many more parts and to examine more operating conditions, in order to provide useful recommendations for NASA users of these devices. In order to develop these approaches, it is necessary to develop test capability that can identify reliability outliers. To do this we must test many devices to ensure outliers are in the sample, and we must develop characterization capability to measure many different parameters. For FY12 we increased capability for reliability characterization and sample size. We increased sample size by moving from loose devices to DIMMs with an approximate reduction of 20 to 50 times in terms of per DUT cost. By increasing sample size we have improved our ability to characterize devices that may be considered reliability outliers. This report provides an update on the effort to improve DDR2 testing capability. Although focused on DDR2, the methods being used can be extended to DDR and DDR3 with relative ease.

temperature stress↗

NASA NTRS2006

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Savich, Gregory R.↗

NASA NTRS1995

On-wafer, cryogenic characterization of ultra-low noise HEMT devices

Significant advances in the development of high electron-mobility field-effect transistors (HEMT's) have resulted in cryogenic, low-noise amplifiers (LNA's) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting insulator superconducting front ends in the 1- to 100-GHz frequency band. Key to identification of the best HEMT's and optimization of cryogenic LNA's are accurate and repeatable device measurements at cryogenic temperatures. This article describes the design and operation of a cryogenic coplanar waveguide probe system for the characterization and modeling of advanced semiconductor transistors at cryogenic temperatures. Results on advanced HEMT devices are presented to illustrate the utility of the measurement system.

Bautista, J. J.↗