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At least 109 records · Page 6

Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

Sah, C. T.↗

Study of Tritium Diffusivity in Pure and Sn-Defective Zr: A First-Principles Density Functional Theory Approach

Zirconium alloys (e.g., zircaloy-4) are used as tritium ( 3 H) getter materials in tritium-producing burnable absorber rods (TPBARs) owing to their ability to capture 3 H and chemically convert them into metal hydrides. Understanding of 3 H diffusion mechanisms in zircaloy is crucial for the optimal design of material performance in nuclear technology. Here, for this work, we perform first-principles density functional theory calculations to study the 3 H diffusion mechanism in pure and impure Zr with a low concentration of tin (Sn) atoms to determine the impact of the presence of Sn on the movement of 3 H atoms through the material. First, we calculated the diffusion barriers for 3 H in pure Zr by taking different migration pathways. We then introduced a low concentration of Sn impurity and systematically explored the impurity effect on the diffusion barriers for 3 H. Using our calculated diffusion energy barriers, we further obtained the diffusion coefficients and analyzed the results by comparing them with the experimental and previously calculated values. A diffusion coefficient of the order of 10 –8 m 2 /s is predicted. We also found that the presence of a Sn impurity could reduce the diffusivity up to 4 orders of magnitude. In conclusion, our results could serve as guidelines for further experimental investigations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Oxygen Tracer Diffusion in LA(z-x) SR(X) CUO(4-y) Single Crystals

The tracer diffusion of O-18 in La(2-x)Sr(x)CuO(4-y) single crystals (x = 0 to 0.12) has been measured from 400 to 700 C in 1 atm of oxygen using SIMS analysis. Evidence for diffusion by a vacancy mechanism was found at low strontium contents. Oxygen diffusivities for x greater than or = 0.07 were depressed by several orders of magnitude below the diffusivity for undoped La2CuO(4+/-y). The observed effects of strontium doping on oxygen diffusivity are discussed in terms of defect chemical models. The decreasing oxygen diffusivity with increasing strontium was attributed to the ordering of oxygen vacancies at large defect concentrations. A diffusion anisotropy D(sub ab)/D(sub c) of nearly 600 was also found at 500 C.

OXYGEN DIFFUSIVITY↗

Microstructure and hardness evolution induced by annealing of ion irradiated LiTaO 3

We report the evolution of the microstructure and mechanical properties of low-energy heavy-ion-irradiated LiTaO 3 crystals annealed at various temperatures was investigated by transmission electron microscopy (TEM) observations and nanoindentation tests to extend the applications of irradiated LiTaO 3 crystals. Before annealing, randomly distributed voids formed in an approximately 200 nm thick region at the end of the ion irradiation range, which was attributed to preferential absorption of interstitials by the amorphous-crystalline interface. After annealing, a new directional diffusion path of defects was identified, resulting in a void string. Furthermore, void string diffusion to the free surface was also found during the annealing temperature increase process, which offers a potential application in designing custom sized-thickness exfoliation at the nanoscale. Meanwhile, two competing processes were identified during the annealing process: epitaxial recrystallization from the amorphous-crystalline interface and grain nucleation process in the amorphous region, which formed phases different from the matrix crystal structure, resulting in an interaction between them. Furthermore, the hardness of irradiated samples was also found to be affected by the annealing process; in particular, a hardness decrease induced by the interstitial Fe ions in the recrystallized region was also confirmed, which can improve the processability of samples for further application.

36 MATERIALS SCIENCE↗

The effects of dose, dose rate, and irradiation type and their equivalence on radiation-induced segregation in binary alloy systems via phase-field simulations

Radiation-induced segregation is a phenomenon commonly observed in many alloys which consists of the redistribution of elements (solute or interstitial impurities) under irradiation. The onset and development of radiation-induced segregation can only occur when a sufficient flux of defects is sustained and defect sinks are present. Irradiation dose, dose rate, and particle types all affect defect flux. In this work, we employ a phase-field model to examine the effects of dose, dose rate, and type of incident particles on radiation-induced segregation behavior in a model binary alloy. The phase-field model takes into account the formation and evolution of point defects as well as defect clusters, the diffusion and clustering of alloy species, the presence of additional extrinsic defect sinks in the form of dislocations, and two different methods of radiation-damage insertion, which are intended to simulate either light-ion/electron irradiation via Frenkel pairs or heavy-ion irradiation in the form of cascades. Our results show a dose-rate and particle-type dependence on the amount of solute segregation. We show that the material systems exposed to higher dose rates are less subjected to solute segregation at equivalent doses. We also show that such dose-rate-dependence behavior is due to a delay of the incubation dose at which radiation-induced segregation effectively starts. Particle type and the presence of dislocations can accentuate this behavior. Our model predictions correlate with many experimental observations made over the years on radiation-induced segregation providing credence to the simulation results. The methodology presented in this study allows for a first-order prediction of the dose rate at which proxy irradiation experiments could be performed to approximate radiation-induced segregation behaviors seen in targeted irradiation conditions.

36 MATERIALS SCIENCE↗

Spatio-temporal control of phenylpropanoid biosynthesis by inducible complementation of a cinnamate 4-hydroxylase mutant

Abstract Cinnamate 4-hydroxylase (C4H) is a cytochrome P450-dependent monooxygenase that catalyzes the second step of the general phenylpropanoid pathway. Arabidopsis reduced epidermal fluorescence 3 (ref3) mutants, which carry hypomorphic mutations in C4H, exhibit global alterations in phenylpropanoid biosynthesis and have developmental abnormalities including dwarfing. Here we report the characterization of a conditional Arabidopsis C4H line (ref3-2pOpC4H), in which wild-type C4H is expressed in the ref3-2 background. Expression of C4H in plants with well-developed primary inflorescence stems resulted in restoration of fertility and the production of substantial amounts of lignin, revealing that the developmental window for lignification is remarkably plastic. Following induction of C4H expression in ref3-2pOpC4H, we observed rapid and significant reductions in the levels of numerous metabolites, including several benzoyl and cinnamoyl esters and amino acid conjugates. These atypical conjugates were quickly replaced with their sinapoylated equivalents, suggesting that phenolic esters are subjected to substantial amounts of turnover in wild-type plants. Furthermore, using localized application of dexamethasone to ref3-2pOpC4H, we show that phenylpropanoids are not transported appreciably from their site of synthesis. Finally, we identified a defective Casparian strip diffusion barrier in the ref3-2 mutant root endodermis, which is restored by induction of C4H expression.

Plant Sciences↗

Topology driven and soft phonon mode enabled Na-ion diffusion in quaternary chalcogenides, Na 3 ZnGaX 4 (X = S, and Se)

The compounds Na 3 ZnGaX 4 (X = S, Se) are potential solid electrolyte materials in sodium-based batteries, which have certain advantages over oxide materials and have shown significant ionic conductivity at ambient temperature. In this paper, we bring out atomic-level features of the diffusion process in these new materials using the microscopic techniques of inelastic neutron scattering (INS), quasielastic neutron scattering (QENS), and ab initio molecular dynamics (AIMD) simulations. The insights obtained from these techniques are unique and not available from other macroscopic experiments. Neutron scattering experiments have been performed at temperatures from 100 to 700 K. The simulations have been carried out up to 900 K. We have calculated the phonon spectra and the space–time correlation functions and found good agreement with the results of the neutron scattering experiments. The simulations enable detailed analysis of the atomic-site dependent dynamical information. We observe low-energy phonon modes of ~6 meV involving the vibrations of certain Na atoms in the lattice. This reveals that the Na at 32g Wyckoff sites (Na2) has sufficiently shallow potential among the two available crystallographic sites. This shallow potential facilitates diffusion. Furthermore, the specific structural topology of the network of interconnected zig-zag chains of the Na2 atomic sites provides the low-barrier energy pathways for diffusion. A small fraction of vacancy defects appears essential for diffusion. We further observe that the Na2 atoms undergo jump-like diffusion to the vacant next or the 2nd next neighbour sites at ~4 Å. While the QENS experiments reveal the jump-like diffusion and its time scale, detailed analysis of the AIMD simulations shows that the jumps appear mostly along zig-zag chains of the Na2 sites in the tetragonal ab-plane, as well as between the chains along the c-axis. In conclusion, the net diffusion is essentially 3-dimensional, with little anisotropy despite the anisotropy of the tetragonal crystal structure.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

In-Pile Irradiation Induced Defects and the Effect on Thermal Diffusivity of MgO

The effects of neutron irradiation temperature and dose on thermal diffusivity are compared between non-irradiated and in-pile irradiated MgO samples. MgO pellets were irradiated in-pile of the Advanced Test Reactor at Idaho National Laboratory. Samples were irradiated at 623 and 973 K to fast neutron fluences of 1 x 1025 (1.5 dpa) and 2 x 1025 n/m2 (3 dpa). Post irradiation examination included X-ray diffraction, scanning electron microscopy, laser flash thermal diffusivity, and transmission electron microscopy. The radiation induced thermophysical and structural evolution of MgO is reported

T. Moorea, Donald↗

Effect of lithium diffusion into Ga 2 O 3 thin films

The integration of lithium based compounds (e.g., Li:NiO/Ga 2 O 3 , LiGa 5 O 8 /Ga 2 O 3 ) in Ga 2 O 3 based pn-heterojunctions raises concerns about interface stability, i.e., Li diffusion effects on Ga 2 O 3 properties. In this work the ex-situ diffusion of Li is investigated in three different Ga 2 O 3 epilayers systems [(001) κ-Ga 2 O 3 and (−201) β-Ga2O3 heteroepitaxy on (001) α-Al 2 O 3 , and (010) β-Ga 2 O 3 homoepitaxy] at relevant temperatures for the synthesis / processing of Li-based epilayers. It is here experimentally demonstrated and quantified the Li diffusion in all the investigated Ga 2 O 3 epilayers systems and Li bulk (D Li,bulk ) and 2D defects (D Li,2D ) diffusion coefficients are provided. In the case of the (010) β-Ga 2 O 3 homoepitaxial layer (nominally free of structural defects), hybrid functional theory calculations foresee a diffusion mechanism mediated by Ga vacancies (VGa). Moreover, in the (010) β-Ga 2 O 3 homo-layer a significant effect on its functional properties (e.g., additional Raman vibrational modes, induced conductivity in an otherwise insulating sample) upon the Li-diffusion process is experimentally highlighted and tentatively related to the passivation of acceptor defects (i.e., formation of V Ga -nLi complexes).

Defects↗

Development of a creep model informed by lower-length scale simulations to simulate creep in doped UO 2

Using molecular dynamics, we predict information at the atomistic scale used to develop a mechanistic UO 2 creep model for use in higher length-scale fuel performance codes. The ultimate objective of the model is to better describe the grain size dependence and therefore impact of doping on creep rates in UO 2 . In a previous NEAMS milestone, we found that Nabarro-Herring (bulk diffusional) creep was too low to capture the experimentally observed creep rates in standard UO 2 . Moreover, in that milestone, other mechanisms were explored, such as Coble (grain boundary) creep and dislocation climb, with each mechanism exhibiting different grain size dependencies. Again, these were orders of magnitude too low to describe the experimental creep rates. In this work, we address the previous assumptions made for the Coble creep mechanism by investigating the diffusivity of various defects at grain boundaries in UO 2 and, critically, to determine if enhanced grain boundary diffusivity allows the model to better reproduce experimental results. The diffusivity as a function of temperature for different concentrations of uranium vacancies and interstitials for bulk UO 2 have also been examined using cluster dynamics. Furthermore, using a concentration dependent segregation model, the concentration of defects at the grain boundary were predicted. This atomistic data was then input into the various creep mechanisms and the creep rates compared to the empirical MATPRO correlation (used in BISON) and experiment.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Evolution of dislocation loops in irradiated α-Uranium: An atomistically-informed cluster dynamics investigation

An atomistically-informed mean field cluster dynamics model has been developed to investigate the nucleation and growth of prismatic loops in irradiated a-Uranium. TEM analysis of neutron irradiated a-Uranium shows the evolution of self-interstitial atom and vacancy loops on (010) and (100) crystallographic planes, respectively, resulting in an anisotropic lattice swelling of its face-centered orthorhombic crystal. To provide model parameters, the crystallography of loops and the binding energy of point defects to these loops were studied using an angular dependent EAM potential and classical molecular dynamics (MD) simulations. Furthermore, using the bond-boost hyperdynamics method, the anisotropic diffusion of interstitials and vacancies in a-Uranium was investigated. Here, the mechanisms of point defect diffusion and the associated migration energies were reported and compared with previous DFT studies. The energetics and kinetic quantities mentioned above were used in the cluster dynamics model to predict the cluster density as a function of dose rate, dose and temperature and the results were compared to the reported neutron irradiation experiments. The model predictions reveal an accumulation of small sized vacancy loops along with a population of large and growing self-interstitial loops, which closely corresponds to the TEM observations.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Increased Defect Resistance and Ordering in MnBi 2 (Se 1– x Te x ) 4 via Accurate Diffusion Monte Carlo

Stabilizing materials and controlling defect formation remain key challenges in materials science, particularly for theory, where small energy differences must be resolved for accurate predictions. Here, we applied state-of-the-art theoretical methods to topological materials, focusing on MnBi 2 Te 4 (MBT), which is a promising intrinsic magnetic topological insulator. Antisite defects in MBT alter its electronic structure and magnetism, degrading topological properties and causing experimental inconsistencies. Using diffusion Monte Carlo and density functional theory, we investigated the thermodynamic stability and defect formation in MBT, MnBi 2 Se 4 (MBS), and MnBi 2 (Se 1–x Te x ) 4 . We found that MnBi 2 Se 2 Te 2 can be stable at finite temperatures, with higher defect formation energies due to stronger Mn–Se bonding and reduced internal strain. Se preferentially substitutes Te near Mn instead of Te in the outer layer, encouraging long-range ordering when incorporated. For MnBi 2 (Se 1–x Te x ) 4 , cluster expansion phase diagrams revealed solid solution behavior when x <0.5 and phase separation for larger x. MBT and MBS are topological insulators; therefore, the MnBi 2 (Se 1–x Te x ) 4 family could offer tunable topological behavior and improved stability.

MnBi2Te4↗

Stress studies in EFG

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.

Source record↗

Understanding the effect of irradiation and silicon carbide microstructure on silver diffusion in TRISO particles

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) fuel particles serves as a barrier to prevent the escape of fission from the fuel kernel. The release of silver (Ag) is a concern due to the long half-life of the 110mAg isotope. In this study, a combination of atomistic and phase-field methods focuses on quantifying the effect of irradiation and SiC microstructure on Ag diffusion. Atomistic calculations provide the Ag diffusivity in SiC bulk and GBs, also providing an estimate of the effect of irradiation defects on Ag diffusivity in bulk SiC. These lower length scale efforts are leveraged to develop a mesoscale effective Ag diffusion coefficient (Deff) in SiC. Deff is defined as a function of temperature, microstructure variables, and fluence. Deff is implemented in the fuel performance code Bison to predict Ag release from AGR-1 and AGR-2 TRISO fuel particles. We hereby quantify the impact of SiC grain size and irradiation on Ag release and improve Bison's predictions.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Tritium diffusion and formation in the bulk and defective surface of γ-LiAlO2 pellets: First-principles investigation

In tritium-producing burnable absorber rods (TPBAR), γ-LiAlO2 is used in the form of an annular ceramic pellet enriched with the 6Li isotope. When irradiated in a pressurized water reactor (PWR), the <sup>6</sup>Li pellets absorb neutrons and produce tritium (<sup>3</sup>H) through <sup>6</sup>Li + n <sup>3</sup>H + α. The 3H chemically reacts with the metal getter where it is captured and leads to formation of a metal hydride. For TPBARs to enable effective tritium production in PWRs, we investigated the <sup>3</sup>H diffusion pathways in the bulk and surface of γ-LiAlO<sub>2</sub> with different concentrations of lithium defects. The calculated results for bulk and low-index surfaces, thermal conductivity, 3H activation energy barriers, and the 3H diffusion coefficients in γ-LiAlO<sub>2</sub> are in good agreement with the available experimental values. In the bulk, our results show that the smallest activation energy barrier is 0.63 eV for substitutional <sup>3</sup>H diffusion with a diffusion coefficient of 3.25x10<sup>-12</sup> m<sup>2</sup>/s. After <sup>3</sup>H diffused from bulk to the surface, it could form different species (such as <sup>3</sup>H<sub>2</sub>, <sup>3</sup>H<sub>2</sub>O, C<sup>3</sup>H<sub>4</sub>) depending on the surface structure, vacancy types and the impurity carbon. Our results indicate that the <sup>3</sup>H<sub>2</sub> is the main product from γ-LiAlO<sub>2</sub> pellets. As the number of V<sub>Li</sub> vacancies and <sup>3</sup>H atoms increases under irradiation (<sup>3</sup>H-rich condition), <sup>3</sup>H<sub>2</sub>O release could increase from the surface of γ-LiAlO<sub>2</sub> pellets.

Jia, Ting↗

Identifying native point defect configurations in α-alumina

Intimately intertwined atomic and electronic structures of point defects govern diffusion-limited corrosion and underpin the operation of optoelectronic devices. For some materials, complex energy landscapes containing metastable defect configurations challenge first-principles modeling efforts. Here, we thoroughly reevaluate native point defect geometries for the illustrative case of α-Al 2 O 3 by comparing three methods for sampling candidate geometries in density functional theory calculations: displacing atoms near a naively placed defect, initializing interstitials at high-symmetry points of a Voronoi decomposition, and Bayesian optimization. We find symmetry-breaking distortions for oxygen vacancies in some charge states, and we identify several distinct oxygen split-interstitial geometries that help explain literature discrepancies involving this defect. We also report a surprising and, to our knowledge, previously unknown trigonal geometry favored by aluminum interstitials in some charge states. Importantly, these new configurations may have transformative impacts on our understanding of defect migration pathways in aluminum-oxide scales protecting metal alloys from corrosion. Overall, the Voronoi scheme appears most effective for sampling candidate interstitial sites because it always succeeded in finding the lowest-energy geometry identified in this study, although no approach found every metastable configuration. Finally, we show that the position of defect levels within the band gap can depend strongly on the defect geometry, underscoring the need to conduct careful searches for ground-state geometries in defect calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of Thermal Diffusivity on the Detectability of TNDE

The effect of thermal diffusively on the defect detectability in Carbon/Epoxy composite panels by transient thermography is presented in this paper. A series of Finite Element Models were constructed and analyzed to simulate the transient heat transfer phenomenon during Thermographic Non-destructive Evaluation (TNDE) of composite panels with square defects. Six common carbon fibers were considered. The models were built for composites with various combinations of fibers and volumetric ratios. Finite Element Analysis of these models showed the trends of the detectable range and the maximum thermal contrast versus the thermal diffusivity of various composites. Additionally, the trends of defect size to depth ratio and the thermal contrast has been investigated.

Zhao, Junduo↗

Oxygen vacancy dynamics in monoclinic metallic VO 2 domain structures

It was demonstrated recently that the nano-optical and nanoelectronic properties of VO 2 can be spatially programmed through the local injection of oxygen vacancies by atomic force microscope writing. In this work, we study the dynamic evolution of the patterned domain structures as a function of the oxygen vacancy concentration and the time. A threshold doping level is identified that is critical for both the metal–insulator transition and the defect stabilization. The diffusion of oxygen vacancies in the monoclinic phase is also characterized, which is directly responsible for the short lifetimes of sub-100 nm domain structures. This information is imperative for the development of oxide nanoelectronics through defect manipulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗