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Results for “current-voltage characteristic”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

A theory of neutral gas emissions from a plasma contactor and its effect on electrodynamic tether performance

An existing anisotropic anodic plasma contactor model is extended to include neutral gas emissions. Within the framework of the contactor model, the inclusion of external ionization leads to an integrodifferential equation. By choosing the ratio of the contactor radius to the neutral gas-electron ionization mean free path at the contactor exit as a suitable expansion parameter, an analytical expression for the current-voltage characteristic can be found. The performance of this contactor model is examined via a dynamic simulation model developed for electrodynamic tethers. Detailed models of the geomagnetic field and the ionosphere are used to create a realistic environment. The highly nonlinear contactor voltagle-current characteristic is incorporated into a circuit equation, which includes radiation impedance, and is solved along the tether's orbit. Results show that it is more effective to fully ionize the contactor gas internally, than to partially ionize it externally, and that based on the specific power for the tether system, the optimum gas to use is argon. In addition, the effect of the radiation impedance on tether system performance is examined.

Roy, R. I. S.↗
NASA NTRS1991

All high Tc edge-geometry weak links utilizing Y-Ba-Cu-O barrier layers

High quality YBa2Cu3O(7-x) normal-metal/YBa2Cu3O(7-x) edge-geometry weak links have been fabricated using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25-100 A thick barrier layers exhibit current-voltage characteristics consistent with the resistively shunted junction model, with strong microwave and magnetic field response at temperatures up to 85 K. The critical currents vary exponentially with barrier thickness, and the resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area, indicating good barrier uniformity, with an effective mormal metal coherence length of 20 A.

Hunt, B. D.↗
NASA NTRS1978

Preliminary results on the conversion of laser energy into electricity

A preliminary experiment was performed to investigate conversion of 10.6 micron laser energy to electrical energy via a laser-sustained argon plasma. Short-circuit currents of 0.7 A were measured between a thoriated-tungsten emitter and collector electrodes immersed in the laser-sustained argon plasma. Open-circuit voltages of about 1.5 V were inferred from the current-voltage load characteristics. The dominant mechanism of laser energy conversion is uncertain at this time. Much higher output powers appear possible.

Thompson, R. W.↗
NASA NTRS1984

Electrical research on solar cells and photovoltaic materials

The flat-plate solar cell array program which increases the service lifetime of the photovoltaic modules used for terrestrial energy applications is discussed. The current-voltage response characteristics of the solar cells encapsulated in the modules degrade with service time and this degradation places a limitation on the useful lifetime of the modules. The most desirable flat-plate array system involves solar cells consisting of highly polarizable materials with similar electrochemical potentials where the cells are encapsulated in polymers in which ionic concentrations and mobilities are negligibly small. Another possible mechanism limiting the service lifetime of the photovoltaic modules is the gradual loss of the electrical insulation characteristics of the polymer pottant due to water absorption or due to polymer degradation from light or heat effects. The mechanical properties of various polymer pottant materials and of electrochemical corrosion mechanisms in solar cell material are as follows: (1) electrical and ionic resistivity; (2) water absorption kinetics and water solubility limits; and (3) corrosion characterization of various metallization systems used in solar cell construction.

Orehotsky, J.↗
NASA NTRS1987

Resistive synaptic interconnects for electronic neural networks

The use of the alpha-Ge(1-x):Al(x) and alpha-Ge(1-x):Cu(x) alloys and Pt/Al2O3 cermet thin films as resistive interconnects for binary synaptic memory arrays is evaluated. The fabrication of the 10-20 microns long, 10 microns wide, and 0.1 micron thick interconnects from the alloys and cermet is described. The current-voltage and switching characteristics of the as-deposited films and the patterned test structure are studied. The resistivity, uniformity, stability, and compatibility of the interconnects are examined. It is observed that alpha-Ge(1-x):Cu(x) alloys have a wide resistivity range and low temperature coefficients of resistance; however, their long-term stability is limited due to their low crystallization temperature. It is detected that the alpha-Ge(1-x):Al(x) alloys have higher crystallization temperatures and their resistivity is not greatly affected by large changes in metal content. The Pt/Al2O3 samples display excellent stability, easy fabrication, and control of resistivity with metal content.

Lamb, J. L.↗
NASA NTRS1982

Numerical simulation of a conducting disk partially covered by an insulator interacting with a plasma

A numerical simulation has been made of the 'pinhole effect' which produces the characteristic 'S-shaped' current-voltage curve. A disk-shaped conducting probe immersed in a plasma is modeled using a particle-in-cell (PIC) code. A probe partially covered by a very thin insulating layer is considered, as well as a probe mounted on an insulating disk. The simulation uses a cylindrical particle mover and allows for a variable number of particles in the system. The simulation space grid uses three different mesh sizes, the coarsest being away from the probe and the finest near the probe, in order to accurately calculate the trajectories of the simulation particles contributing the current to the probe and to the surface charge density on the dielectric. The calculation of the electrostatic potential is done self-consistently using successive over-relaxation (SOR). Backscattering and secondary electron emission are included for the case of positive probe voltage.

Chaky, R. C.↗
NASA NTRS1984

Advanced photovoltaic experiment (S0014)

The advanced photovoltaics-related experiments for investigating a portion of the solar spectrum and the effect of the space environment on photovoltaics. The information will be used to provide correlation between space and ground testing and also to provide for more accurate performance measurement in the laboratory. Specific objectives of these experiments are to provide information on the performance and endurance of advanced and conventional solar cells, to improve reference standards for photovoltaic measurements, and to measure the energy distribution in the extraterrestrial solar spectrum. Data to be obtained will include temperatures and short-circuit current of the samples. Six-point current-voltage (I-V) characteristics will be obtained for selected samples. These data will be recorded once a day during the flight. Orbit data will be correlated with preflight and postflight measurement of the samples.

Bradhorst, H. W., Jr.↗
NASA NTRS1984

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗
NASA NTRS1990

Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

Virtually every device that makes use of the new ceramic superconductors will need normal conductor to supercondutor contacts. The current-voltage and electrical noise characteristics of these contacts could be become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quanity often used to characterize electrical noise, very closely followed an empirical relationship given by, S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

Hall, J.↗
NASA NTRS1990

Electrical transport measurements on polycrystalline superconducting Y-Ba-Cu-O films

The current-voltage, I-V, characteristics of polycrystalline Y-Ba-Cu-O films have been measured as a function of temperature. The I-V characteristics are interpreted using a model based upon an array of weak links with a statistical distribution of critical currents. In addition, evidence is found that the supercurrents flow in nearly independent filaments near Tc. Various criteria are discussed with respect to the definition of the transport critical current, Ic, in these films. A temperature dependence for Ic has also been deduced from the I-V data by appealing to an empirical scaling law. It is proposed that this temperature dependence is representative of the weaker links within the critical current distribution.

Stan, M. A.↗
NASA NTRS1985

Method and apparatus for I-V data acquisition from solar cells

A method and apparatus for logging current-voltage (I-V) characteristic d of a solar cell module (10) in two modes using a portable instrument. One mode controls the load current through a circuit (36) in 256 equal intervals while voltage is measured from open circuit to at least halfway into the knee of the curve and the other mode controls the load voltage through a circuit (34) in 256 equal intervals from the lowest voltage measurement possible (short circuit) to at least halfway into the knee of the curve, under control of a microcomputer (12). All measurements are packed by discarding each measurement that is within 0.5% of the value predicted from two previous measurements, except every ninth (9th) measurement which is retained. The remaining data is further packed into a memory block of a detachable storage medium (14) by recording the data points in sequence following a header containing data common to all points, with each point having the value of the controlled parameter recorded as the number of increments from the previous point recorded followed by the measured value. The detachable storage medium is preferably a solid state device for reliability, and is transferable to a playback terminal which unpacks the data for analysis and display.

Cole, Steven W.↗
NASA NTRS1971

Proximity effect between superconducting and normal metals

Electrical characteristics of thin films of tin vapor deposited on gold substrates are described. Favorable characteristics of these films include: (1) shiny and smooth finishes; (2) higher Josephson critical currents; (3) smaller electronic mean paths; and (4) consistent current-voltage curve shapes. One unfavorable characteristic is a much steeper increase of the Josephson critical current with decreasing temperature. The functional variation of the Josephson current with the control current is described. Two functional forms have been observed and a brief description as to possible mechanisms for this behavior have been included.

Meissner, H.↗
NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗
NASA NTRS1970

Constant current load matches impedances of electronic components

Constant current load with negative resistance characteristics actively compensates for impedance variations in circuit components. Through a current-voltage balancing operation the internal impedance of the diodes is maintained at a constant value. This constant current load circuit can be used in simple telemetry systems.

Alexander, R. M.↗
NASA NTRS1972

Weakly superconducting, thin-film structures as radiation detectors.

Measurements were taken with weakly superconducting quantum structures of the Notarys-Mercereau type, representing a thin superconductor film with a short region that is weakened in the sense that its transition temperature is lower than in the remaining portion of the film. The structure acts as a superconducting relaxation oscillator in which the supercurrent increases with time until the critical current of the weakened section is attained, at which moment the supercurrent decays and the cycle repeats. Under applied radiation, a series of constant-voltage steps appears in the current-voltage curve, and the size of the steps varies periodically with the amplitude of applied radiation. Measurements of the response characteristics were made in the frequency range of 10 to 450 MHz.

Kirschman, R. K.↗
NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗
NASA NTRS1979

Low cost cylindrical converter for measuring lead efficiency

A low cost cylindrical thermionic converter has been designed, fabricated, and tested for use in a NASA-JPL program to directly measure converter lead efficiencies using various electrode materials and surfaces. Efficiency measurements are made using input emitter heater power, output power at the leads, and calculated values of the parasitic losses that would not be present in the application configuration. This information can be used to predict the performance characteristics of the advanced converters currently under development. A series of five converters has been tested. Both structured and smooth molybdenum collectors have been used. Emitters included smooth molybdenum, smooth rhenium, and microstructured rhenium. Cesium pressure families of current-voltage curves are presented for emitter temperatures of 1600, 1700, and 1800 K, along with measured efficiencies as a function of converter current densities for each temperature.

Hatch, G. L.↗