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This is the results of advanced conductor testing in report form. This report demonstrates the characteristics of the Southwire C7 TP conductor when exposed to wildfire conditions.
Abstract The key component in lithium solid‐state batteries (SSBs) is the solid electrolyte composed of lithium superionic conductors (SICs). Lithium oxide SICs offer improved electrochemical and chemical stability compared with sulfides, and their recent advancements have largely been achieved using materials in the garnet‐ and NASICON (sodium superionic conductor)‐ structured families. In this work, using the ion‐conduction mechanisms in garnet and NASICON as inspiration, a common pattern of an “activated diffusion network” and three structural features that are beneficial for superionic conduction: a 3D percolation Li diffusion network, short distances between occupied Li sites, and the “homogeneity” of the transport path are identified. A high‐throughput computational screening is performed to search for new lithium oxide SICs that share these features. From this search, seven candidates are proposed exhibiting high room‐temperature ionic conductivity evaluated using ab initio molecular dynamics simulations. Their structural frameworks including spinel, oxy‐argyrodite, sodalite, and LiM(SeO 3 ) 2 present new opportunities for enriching the structural families of lithium oxide SICs.
Abstract Solid‐state K‐ion conducting electrolytes are key elements to address the current problems in K secondary batteries. Here, we report a sulfide‐based K‐ion conductor K 3 SbS 4 with a low‐activation energy of 0.27 eV. W‐doped K 3− x Sb 1− x W x S 4 ( x =0.04, 0.06, 0.08, 0.10 and 0.12) compounds were also explored for increasing vacancy concentrations and improving ionic conductivity. Among them, K 2.92 Sb 0.92 W 0.08 S 4 exhibits the highest conductivity of 1.4×10 −4 S cm −1 at 40 °C, which is among the best reported potassium‐ion conductors at ambient temperature. In addition, K 2.92 Sb 0.92 W 0.08 S 4 is electrochemically stable with long‐chained potassium polysulfide of K 2 S x . A room‐temperature solid potassium–sulfur (K−S) battery system has therefore been successfully demonstrated, which is the first K−S battery prototype using non‐commercial inorganic‐based electrolyte to block the polysulfide shuttle.
Abstract Solid‐state K‐ion conducting electrolytes are key elements to address the current problems in K secondary batteries. Here, we report a sulfide‐based K‐ion conductor K 3 SbS 4 with a low‐activation energy of 0.27 eV. W‐doped K 3− x Sb 1− x W x S 4 ( x =0.04, 0.06, 0.08, 0.10 and 0.12) compounds were also explored for increasing vacancy concentrations and improving ionic conductivity. Among them, K 2.92 Sb 0.92 W 0.08 S 4 exhibits the highest conductivity of 1.4×10 −4 S cm −1 at 40 °C, which is among the best reported potassium‐ion conductors at ambient temperature. In addition, K 2.92 Sb 0.92 W 0.08 S 4 is electrochemically stable with long‐chained potassium polysulfide of K 2 S x . A room‐temperature solid potassium–sulfur (K−S) battery system has therefore been successfully demonstrated, which is the first K−S battery prototype using non‐commercial inorganic‐based electrolyte to block the polysulfide shuttle.
We show, through the use of the Landauer-Büttiker (LB) formalism and a tight-binding (TB) model, that the transport gap of twinned graphene can be tuned through the application of a uniaxial strain in the direction normal to the twin band. Remarkably, we find that the transport gap E gap bears a square-root dependence on the control parameter ϵ x – ϵ c , where ϵ x is the applied uniaxial strain and ϵ c ~ 19% is a critical strain. We interpret this dependence as evidence of criticality underlying a continuous phase transition, with ϵ x – ϵ c playing the role of control parameter and the transport gap E gap playing the role of order parameter. For ϵ x < ϵ c , the transport gap is non-zero and the material is semiconductor, whereas for ϵ x < ϵ c the transport gap closes to zero and the material becomes conductor, which evinces a semiconductor-to-conductor phase transition. The computed critical exponent of 1/2 places the transition in the meanfield universality class, which enables far-reaching analogies with other systems in the same class.
There is a current need for new aluminum alloy design strategies to target applications requiring high strength and conductivity with reductions in mass. A new lightweight Al-2Ni-0.5Zr (wt. %) conductor alloy was fabricated using laser powder bed fusion. A design of experiments probed the alloy's solidification cracking susceptibility. It was observed that solidification cracking was generally reduced with fast scan speeds, above 1500 mm/s, and smaller hatch spacings. The different cooling rates throughout the melt pool produced a heterogeneous distribution of cellular and equiaxed Al 3 Ni precipitates in the as-printed alloy. Additionally, the rapid solidification characteristic of laser powder bed fusion created a super-saturated Zr solid solution. An aging heat treatment at 375 °C for 24 h imparted strengthening through the precipitation of L1 2 -Al 3 Zr nanoprecipitates, which counteracted the softening caused by the fragmentation and coarsening of Al 3 Ni precipitates. The yield strength increased from 138 MPa in the as-printed condition to 168 MPa after aging, while the ductility remained constant at ∼21%. The aging treatment simultaneously increased the electrical conductivity from 40.8% IACS (International Annealed Copper Standard) to 53.5% IACS. Modeling of the strengthening mechanisms and electrical conductivity contributions rationalized the simultaneous increase in strength and conductivity upon aging. Furthermore, the strengthening efficacy of the Al 3 Ni and L1 2 -Al 3 Zr precipitates, combined with the low Ni and Zr solubility in the FCC Al matrix, facilitated both high strength and electrical conductivity. Overall, the combination of strength and electrical conductivity positions this alloy as a suitable choice for additively manufactured lightweight conductors.
The study of defect chemistry for doped BaZrO 3 proton conductors is of particular interest because of defect interactions that can affect the proton conductivity of the material. Protons incorporated due to the material's hydration can be trapped by negatively charged immobile dopants, reducing proton mobility. The reduction of the proton conduction impedes using BaZrO 3 materials in energy conversion applications at intermediate temperatures (300°C – 600°C). The probing of proton trapping in doped BaZrO 3 is hindered by the limited availability of techniques sensitive to defect chemistries. In this work, we used positron annihilation lifetime spectroscopy (PALS) to study the defect chemistry of Y-doped and Sc-doped BaZrO 3 . Using a two-state positron trapping model we showed that PALS can be used to study the defect chemistry of hydrated dense proton conductors. Positron trapping rates and lifetimes were correlated with doping levels of the materials. Probability significance t-tests were carried out for PALS parameters to verify whether there are differences/similarities for various populations: non-doped/doped, level and type of doping, high temperature, and surface effects. Further, the results revealed that the initial doping generates a significant number of traps available for positrons. Doping in yttrium increased the positron trapping rate, while this effect was not observed with scandium. Low-temperature hydration affects specimens significantly inhibiting positron trapping at undoped BaZrO 3 material and highly doped specimens. Positronium formation in rough surface layers, and highly doped specimens was detected but does not exceed 1%.
There is a growing demand for advanced conductors with enhanced electrical properties to increase the energy efficiency in various applications. A promising strategy to achieve this involves the use of ultraconductive copper (UCC) composites that incorporate highly conductive carbon materials, such as carbon nanotubes (CNTs), into the copper matrix. In this study, we present a scalable brush coating technique to incorporate CNTs onto Cu substrates to produce Cu–CNT–Cu composites. The process involves brush coating the CNT solution on Cu tape substrates, followed by vacuum-assisted thermal removal of organic moieties (e.g., surfactant/polymer). This step ensures the creation of a uniformly distributed CNT network within the Cu matrix. By addition of a thin film Cu overlayer, the fabricated Cu–CNT–Cu composite architecture demonstrates similar electrical conductivity, increased current carrying capacity, and enhanced mechanical properties compared to pure Cu reference tapes. Finally, the performance characteristics of these UCC tapes along with the scalability of the brush coating approach hold great promise for the fabrication of advanced conductors for wide-ranging energy applications.
Improving the efficiency of electrical components is critical in reducing energy consumption for various industrial and residential applications, ranging from rotating machinery to all electric devices and electric vehicle (EV) components to power grid systems. Substituting Cu wires with reduced resistance conductors that incorporate carbon nanotubes (CNTs) into Cu─ultraconductive Cu (UCC) composites─has recently been considered a promising strategy to improve energy efficiency, power density, and/or performance across various applications. Here, in this study, we created stable material formulations [CNT-containing polyvinylpyrrolidone (PVP) in dimethylformamide (DMF) solution] and utilized commercially viable fabrication approaches (electrospinning and magnetron sputtering) that produced high-performance multilayered tape-based UCC composite architectures. Increasing the CNT volume fraction by sequential layering of the structure with additional Cu-CNT layers showed a nearly stepwise improved performance in electrical and mechanical properties. This study also provides valuable insight into the effectiveness of nitrogen doping in modifying the conductivity of the CNT matrix. Fabricated prototypes demonstrated a >10% increase in current carrying capacity and >10% improvement in mechanical strength compared to those obtained on pure Cu. We believe that the properties demonstrated here, combined with the scalable manufacturing pathway of our approach, pave the way in designing future advanced conductors for diverse energy efficient and high-performance electrical systems and applications.
A number of technological applications of metal–organic frameworks (MOFs) require the formation of their thin films on insulator and/or conductor substrates at selected areas with desired thicknesses. However, fabrication of such MOF films often requires multi-step processes and/or sophisticated instruments. Herein, we discuss electrochemistry-induced MOF deposition, which permits the direct formation of a thin MOF film with controlled thickness at a desired area on various substrates. So far, we have reported the applicability of this deposition method for the formation of zeolitic imidazolate framework-8 (ZIF-8) films. In this method, a ZIF-8 film is formed on an insulator or a conductor substrate upon applying a cathodic potential to a working electrode that is placed above the substrate. Importantly, the film is formed just below the cathodic working electrode, indicating that the position and lateral dimensions (on the mm- to μm-scale) of the film can be controlled by those of the working electrode. In addition, film thickness is controllable in the range of tens to hundreds of nanometers by adjusting potential application conditions at the cathodic working electrode. These results show that the electrochemistry-induced deposition method will provide a simple means for the fabrication of a patterned MOF film on various substrates without additional lithographic processes.
Scanning x-ray microbeam topography and fluorescence experiments were conducted in situ to study the electromigration behavior of a 0.5 μm thick, 10 μm wide, and 200 μm long Al(0.25 at. % Cu) conductor line with 1.5 μm-thick SiO2 passivation on a single crystal Si substrate. The strain sensitivity of x-ray topography measurement allowed detailed examination of the electromigration-induced stress distribution and evolution in the conductor line in response to the depletion of Cu solute early in the electromigration process. Upon electromigration at 0.4 MA/cm2 and 303 °C, a short-range stress gradient was quickly induced by Al migration in the Cu-depleted cathode region to counteract further Al flow. The stress gradient was fully developed during the 5.3 h incubation time, extending over the critical Blech length of about 66 μm from the cathode end. Plastic deformation then occurred at the downstream end of the Cu-depleted region. The preferential electromigration of Cu did not cause detectable stress change outside the Cu-depleted region, except for the significant stress development from the Al2Cu precipitation at the anode end which appeared to initiate the fracture in the passivation. Preliminary finite difference modeling was undertaken to simulate the experimental observations, from which important parameters dictating electromigration in Al(Cu) line were extracted: an apparent effective valence of −5.6 and −1.9 for Cu and Al in Al(Cu), respectively, and a critical Cu concentration of 0.16 at. % above which Al grain boundary diffusion is effectively blocked.
Synthesizing flexible transparent conducting materials is important for applications in flexible optoelectronics. Metallic oxide membranes offer great promise due to their large elasticity and high transparency. Among them, SrNbO 3 , a correlated metal, stands out as a promise transparent conducting oxide. However, synthesizing freestanding SrNbO 3 membranes poses a challenge because it easily undergoes oxidation, resulting in degraded conductivity. To address this, we utilize epitaxial BaTiO 3 capping layers, which effectively prevents SrNbO 3 oxidation. We successfully fabricate millimeter-sized transparent conducting BaTiO 3 /SrNbO 3 /BaTiO 3 membranes using water-soluble sacrificial layers. The obtained SrNbO 3 (10 nm thick) membrane exhibits a room temperature sheet resistance (R S ) of 174 Ω/sq and a transmittance (T) of 92% at a wavelength of 550 nm. The figure of merit (T 10 /R S ) of this transparent conductor reaches 2.2 × 10 −3 Ω −1 in the visible regime, comparable to SrNbO 3 films on rigid substrates. These results open possibilities for applications as flexible transparent conductors.
Abstract High-temperature superconductors (HTS) are promising candidates for use in the high-field magnets needed in particle accelerators and fusion reactors. HTS conductor on round core (CORC ® ) cables and wires wound from ReBa 2 Cu 3 O 7- x (REBCO) coated tapes are being developed for use in high-field magnet applications including fusion magnets operating at currents beyond 80 kA, requiring them to be bundled into cable-in-conduit conductor (CICC) configurations. The use of HTS cables enable demountable superconducting fusion magnets that would allow easier access to the fusion machine for maintenance and parts replacement. Such demountable magnets require practical, low-resistance joints, capable of injecting current uniformly into the many REBCO tapes that make up different cable designs. Optimization steps on CORC ® cables have resulted in high-current terminations and joints with a joint resistance measured between a pair of 30-tape CORC ® cables of 51 nΩ at 76 K and 1.9 nΩ at 4 K. Demountable joints between CICCs consisting of six CORC ® cables arranged in flat and round configurations were also tested and compared to joints between low-temperature superconducting (LTS) CICCs consisting of NbTi Rutherford cables. Samples were paired into two configurations (LTS-to-LTS and HTS-to-HTS) with a demountable joint between them that were each tested in series with currents up to 10 000 A in an applied background magnetic field of up to 8 T. The total loop resistance of the HTS-to-HTS sample, including their terminations and joint, was about 4 nΩ at 4 K in self-field with the resistance of the copper pressed joint being less than 1 nΩ. At 8 T, the total loop resistance increased to 6.9 nΩ with the pressed joint contributing 1.4 nΩ. These initial tests prove the feasibility of producing remountable (dry) joints with low resistance between superconducting magnet windings in future compact fusion machines.
Abstract Recent reports on screening current stress simulations of high-field REBCO magnets frequently present peak stresses over 1 GPa. However, this result is probably an unrealistic artifact of purely elastic calculations, considering the macroscopic yield and fracture stresses of approximately 900 MPa and less than 1.1 GPa for Hastelloy substrate-coated conductors. Here, we evaluate elastic-plastic conductor damage at over 0.4% strain using a high-stress REBCO coil exposed to a high field to explore this elastic-plastic regime. The coil was located off-center in a low-temperature superconductor magnet so as to induce a significant screening current in the enhanced radial field. Voltage taps, a Hall sensor, and two strain gauges were used for the instrumentation. We obtained strains exceeding 0.4% near the outward edge during the coil current charge from 350 A to 390 A, where the coil was exposed to external axial and radial magnetic fields of 13 T and 0.5 T. Post mortem results showed wavy plastic deformation, electrical damage, and REBCO defects. An elastic-plastic simulation reproduced the measured strains and predicted that ∼1 GPa stress is sufficient to induce ∼0.9% strain, thus validating our initial concerns with purely elastic models. This paper provides our experimental and simulation results.
Angular, magnetic field and temperature dependence of the interlayer Seebeck effect of the multiband organic conductor $\alpha -{(\mathrm{BEDT}-\mathrm{TTF})}_{2}\mathrm{KHg}{(\mathrm{SCN})}_{4}$ is experimentally studied at temperatures down to 0.55 K and fields up to 31 T in a wide range of angles. The background magnetic field and angular component of the Seebeck effect as well as the magnetic quantum oscillations that originate from the closed Fermi surface orbits are analyzed. The background interlayer Seebeck effect components show that above certain tilt angle of the magnetic field and above the kink field there is another CDW state in $\alpha -{(\mathrm{BEDT}-\mathrm{TTF})}_{2}\mathrm{KHg}{(\mathrm{SCN})}_{4}$, between previously known CDW0 and CDWx states, in agreement with magnetoresistance and magnetization studies in this material. Our observations show that this state possesses some of the properties of the CDW0 state. The Fermi surface in the third CDW state is still reconstructed but less imperfectly nested as expected as this state develops above the kink field. The temperature dependence of the interlayer Seebeck effect reveals that this state is developed at temperatures below 3 K and at field orientations around the second AMRO maximum. In addition, for the first time, a detailed T - θ phase diagram of $\alpha -{(\mathrm{BEDT}-\mathrm{TTF})}_{2}\mathrm{KHg}{(\mathrm{SCN})}_{4}$ based purely on Seebeck effect measurements is presented. We find that other states and transitions, beside the CDW states, also exist in a given temperature and angular range that have not been previously reported. These observations change the whole picture about the transport processes in the organic conductor $\alpha -{(\mathrm{BEDT}-\mathrm{TTF})}_{2}\mathrm{KHg}{(\mathrm{SCN})}_{4}$ and allow to better understand the complex nature of the CDW order in this and similar compounds.
Abstract 2D molecular entities build next-generation electronic devices, where abundant elements of organic molecules are attractive due to the modern synthetic and stimuli control through chemical, conformational, and electronic modifications in electronics. Despite its promising potential, the insufficient control over charge states and electronic stabilities must be overcome in molecular electronic devices. Here, we show the reversible switching of modulated charge states in an exfoliatable 2D-layered molecular conductor based on bis(ethylenedithio)tetrathiafulvalene molecular dimers. The multiple stimuli application of cooling rate, current, voltage, and laser irradiation in a concurrent manner facilitates the controllable manipulation of charge crystal, glass, liquid, and metal phases. The four orders of magnitude switching of electric resistance are triggered by stimuli-responsive charge distribution among molecular dimers. The tunable charge transport in 2D molecular conductors reveals the kinetic process of charge configurations under stimuli, promising to add electric functions in molecular circuitry.
Here, this paper presents a non-conductor-contact surface wave-based reflectometry technique to detect and locate missing or damaged insulation and/or jacket of electrical cables. The described sensor may be uniquely and practically implemented on live cables as a non-destructive evaluation (NDE) method since it may be applied to the outer insulation/jacket of a cable and requires no direct contact to the conductor. The innovation lies in a high-frequency surface wave launcher that can introduce broadband signals in the GHz frequencies that insure maximum electromagnetic (EM) energy localization within the insulation and/or jacket material. By further processing the reflection data in the frequency domain, the location and severity of insulation damage is detected. Simulated results of thin, thick, short, and long cables show the results expected from small, medium, and large damage regions. For example, the detection of 40 mm-long damage region at 40 m distance on a 50 m long cable (2.44 cm diameter) is demonstrated. Experimental results are presented that validate simulation findings.
High-temperature superconductors such as REBa 2 Cu 3 O 7-x (REBCO, RE = rare earth) can generate strong magnetic fields that are promising for applications in particle accelerators and compact fusion reactors. Traditionally, voltage taps are installed in superconducting magnets to measure the voltage signals due to resistive transitions. The voltage-tap-based diagnostics is important for the development of magnet technology as it can help pinpoint the locations in the magnet windings that limit the magnet performance. The architecture of the multi-tape REBCO cable such as CORC wires, however, makes it difficult to apply the voltage-tap-based diagnostics to identify the locations of resistive transitions. Distributed fiber optic sensing (DFOS) has the potential to address this issue. In this paper, we report the measurements of thermal strain along a CORC wire based on optical frequency domain reflectometry with a maximum spatial resolution of 0.65 mm and a temporal resolution of 10 Hz. The optical fiber is co-wound with the CORC wire that is epoxy impregnated. During the test, current was increased until a resistive transition occurred in the conductor. The spectrum shift of the reflected light along the fiber was recorded. The results suggested that with proper thermal isolation from the cryogen, DFOS can be used to identify the locations of resistive transitions in CORC wires and magnets. In conclusion, the results will allow a better understanding of the causes of resistive transitions in REBCO conductors and magnets, which will help improve the REBCO magnet technology.