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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Charge-coupled-device X-ray detector performance model

A model that predicts the performance characteristics of CCD detectors being developed for use in X-ray imaging is presented. The model accounts for the interactions of both X-rays and charged particles with the CCD and simulates the transport and loss of charge in the detector. Predicted performance parameters include detective and net quantum efficiencies, split-event probability, and a parameter characterizing the effective thickness presented by the detector to cosmic-ray protons. The predicted performance of two CCDs of different epitaxial layer thicknesses is compared. The model predicts that in each device incomplete recovery of the charge liberated by a photon of energy between 0.1 and 10 keV is very likely to be accompanied by charge splitting between adjacent pixels. The implications of the model predictions for CCD data processing algorithms are briefly discussed.

Bautz, M. W.↗
NASA NTRS2005

Event-driven charge-coupled device design and applications therefor

An event-driven X-ray CCD imager device uses a floating-gate amplifier or other non-destructive readout device to non-destructively sense a charge level in a charge packet associated with a pixel. The output of the floating-gate amplifier is used to identify each pixel that has a charge level above a predetermined threshold. If the charge level is above a predetermined threshold the charge in the triggering charge packet and in the charge packets from neighboring pixels need to be measured accurately. A charge delay register is included in the event-driven X-ray CCD imager device to enable recovery of the charge packets from neighboring pixels for accurate measurement. When a charge packet reaches the end of the charge delay register, control logic either dumps the charge packet, or steers the charge packet to a charge FIFO to preserve it if the charge packet is determined to be a packet that needs accurate measurement. A floating-diffusion amplifier or other low-noise output stage device, which converts charge level to a voltage level with high precision, provides final measurement of the charge packets. The voltage level is eventually digitized by a high linearity ADC.

Doty, John P.↗
NASA NTRS1981

Preliminary results from a single-photon imaging X-ray charge coupled device /CCD/ camera

A CCD camera is described which has been designed for single-photon X-ray imaging in the 1-10 keV energy range. Preliminary results are presented from the front-side illuminated Fairchild CCD 211, which has been shown to image well at 3 keV. The problem of charge-spreading above 4 keV is discussed by analogy with a similar problem at infrared wavelengths. The total system noise is discussed and compared with values obtained by other CCD users.

Griffiths, R. E.↗
NASA NTRS1981

Single photon X-ray imaging with charge-coupled devices /CCDs/

The paper describes a CCD camera facility designed and built for testing and characterization of CCDs in response to single X-ray photons in the 1-10 keV energy range. Results from the frontside-illuminated Fairchild 211 and 221 area imagers are presented; high quantum efficiency over the 3-6 keV range was verified. In order to avoid the problem of charge spreading at the higher energies, deep-depleted CCDs for soft X-ray imaging have been constructed, and good response was obtained at 6 keV. The present results are a first step toward the demonstration of the CCD as an appropriate device for at least the central part of the focal plane of a large X-ray telescope, e.g., the proposed Advanced X-ray Astrophysics Facility.

Griffiths, R. E.↗
NASA NTRS1987

Four-shooter - A large format charge-coupled device camera for the Hale telescope

The Hale telescope has employed an astronomical camera using four 800x800 CCDs in an optical arrangement that allows the imaging of a contiguous 1600-pixel-square region of the sky; reimaging optics are then used to yield a scale of 0.33 arcsec/pixel. Optical coatings are incorporated to yield a throughput at peak efficiency of nearly 50 percent, including telescope losses. This camera can be used in a scanning mode, in which the telescope tracking rate is offset and the charge is clocked in the chips in such a way that the charge image remains aligned with the optical image. Attention is given to the results of a survey for high-redshift quasars using this equipment, which has produced images for the most distant galaxy clusters yet discovered.

Gunn, James E.↗
NASA NTRS1993

Ultra low-noise charge coupled device

Special purpose CCD designed for ultra low-noise imaging and spectroscopy applications that require subelectron read noise floors, wherein a non-destructive output circuit operating near its 1/f noise regime is clocked in a special manner to read a single pixel multiple times. Off-chip electronics average the multiple values, reducing the random noise by the square-root of the number of samples taken. Noise floors below 0.5 electrons rms are possible in this manner. In a preferred embodiment of the invention, a three-phase CCD horizontal register is used to bring a pixel charge packet to an input gate adjacent a floating gate amplifier. The charge is then repeatedly clocked back and forth between the input gate and the floating gate. Each time the charge is injected into the potential well of the floating gate, it is sensed non-destructively. The floating gate amplifier is provided with a reference voltage of a fixed value and a pre-charge gate for resetting the amplifier between charge samples to a constant gain. After the charge is repeatedly sampled a selected number of times, it is transferred by means of output gates, back into the horizontal register, where it is clocked in a conventional manner to a diffusion MOSFET amplifier. It can then be either sampled (destructively) one more time or otherwise discarded.

Janesick, James R.↗
NASA NTRS1981

Texas Instruments /TI/ 800 x 800 charge-coupled device /CCD/ image sensor

Very-large area high-performance CCD image sensors with 800 x 800 pixel format have been successfully fabricated and operated on the basis of a three-level polysilicon gate technology. They are thinned to 8 microns over the entire 12.2 x 12.2 mm active area, and are used in the rear illumination mode. The light transfer characteristic has a gamma value of 1.000 + or - 0.002 over most of the dynamic range. Analysis of the noise behavior shows that the device SNR is shot-noise-limited over most of the dynamic range. Simple on-chip signal processing can be performed using an integration well to noiselessly collect signal charge from multiple pixels prior to reading out the charge. A UV-sensitive phosphor has been applied to the chip, yielding a device capable of imaging at wavelengths from the vacuum UV to the near IR.

Blouke, M. M.↗
NASA NTRS1981

Low and moderate resolution spectroscopy with an RCA charge-coupled device /CCD/

An RCA buried channel thinned 320 x 512 CCD has recently been put into operation as the detector on the blue side of a new double spectrograph used at the Cassegrain focus of the Hale 5.08 m telescope. The chip is used in a vacuum dewer at a temperature of -132 C. The readout noise over most of the chip is 46 electrons per pixel, but on one side of the device there are columns with readout noise three times as high as this. When used in a spectroscopic mode with an f/1.5 beam, the CCD shows interference pattterns with an amplitude of 5 to 20%. This pattern occurs most clearly above 5000 A. It appears to be stable and can be removed by using standard flat-field exposures. At signal levels of a few hundred electrons there are some charge transfer problems. The quantum efficiency between 4000 and 6500 is very high, and the efficiency at 3260 A is about 20% of that at 4200 A. Above 6500 A the sensitivity begins to drop steadily.

Oke, J. B.↗
DOE OSTI2025

Photon counting with intensified charge coupled device (ICCD) – I. In-depth detector characterization

While the adsorption properties of transition metal catalysts have been widely studied, leading to the discovery of various scaling relations, descriptors of catalytic activity, and well-established computational models, a similar understanding of semiconductor catalysts has not yet been achieved. In this work, we present a high-throughput density functional theory investigation into the adsorption properties of 5 oxides of interest to the photocatalytic CO 2 reduction reaction: TiO 2 (rutile and anatase), SrTiO 3 , NaTaO 3 , and CeO 2 . Using a systematic approach, we exhaustively identify unique surfaces and construct adsorption structures to undergo geometry optimizations. We then perform a data-driven analysis, which reveals the presence of weak adsorption energy scaling relations, the propensity of adsorbates of interest to interact with oxygen surface sites, and the importance of slab deformation upon adsorption. Our findings are presented in the context of experimental observations and in comparison to previously studied classes of catalysts, such as pure metals and tellurium-containing semiconductors, and reinforce the need for a comprehensive approach to the study of site-specific surface phenomena on semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Skipper Charge-Coupled Device for Low-Energy-Threshold Particle Experiments above Ground

Here we present experimental results using a single-electron resolution skipper CCD running above ground level to demonstrate the potential of this technology for its use in reactor neutrino observations and other low-energy particle-interaction experiments. Operating conditions and event-selection criteria are provided to decouple most of the background rate at low energies. The majority of this background comes from interactions in the inactive silicon surrounding the active detector volume that ends up in the readout register of the sensor. Our final results are compared with other low-threshold technologies showing a good control of the background for low ionization energies down to five electron-hole pairs. This demonstrates that the skipper CCD proves to be among the best options to measure low-energy and weakly interacting particles at ground level.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1975

Effects of radiation on charge-coupled devices

The effects of 1 MeV electron irradiation upon the performance of two phase, polysilicon aluminum gate CCDs are reported. Both n- and p-surface channel and n-buried channel devices are investigated using 64- and 128-stage line arrays. Characteristics measured as a function of radiation dose include: Transfer inefficiency, threshold voltage, field effect mobility, interface state density, full well signal level and dark current. Surface channel devices are found to degrade considerably at less than 10 to the 5th power rads (Si) due to the large increase in fast interface state density caused by radiation. Buried channel devices maintain efficient operation to the highest dose levels used.

Carnes, J. E.↗
NASA NTRS1976

Intensified charge coupled devices for ultra low light level imaging

Development of a sensor incorporating a CCD and photocathode for operation in the electron bombarded mode in both a magnetic and an electrostatic focussed, gated configuration is described. Initial format size is 100 x 160 pixels with eventual growth to 400 x 400 pixels. The sensor is part of a digital camera system which includes the low level video conditioning electronics, a camera controller, a high speed buffer memory, and digital recording and display electronics. The memory uses CMOS/SOS and has a capacity of 1.6 Mbits with operating rates of 48 Mbits/sec. Individual frames are co-added to provide wide dynamic range and photometric precision better than 1%. A 4-bit video quantization is used to increase the photon counting detection rate before coincidence losses become serious.

Sobieski, S.↗
NASA NTRS1978

Preliminary study of the reliability of imaging charge coupled devices

Imaging CCDs are capable of low light level response and high signal-to-noise ratios. In space applications they offer the user the ability to achieve extremely high resolution imaging with minimum circuitry in the photo sensor array. This work relates the CCD121H Fairchild device to the fundamentals of CCDs and the representative technologies. Several failure modes are described, construction is analyzed and test results are reported. In addition, the relationship of the device reliability to packaging principles is analyzed and test data presented. Finally, a test program is defined for more general reliability evaluation of CCDs.

Beall, J. R.↗
NASA NTRS1978

Time-delay-and-integration charge-coupled devices using tin oxide gate technology

Doped tin oxide gates are used in a time-delay-and-integration (TDI) CCD scheme in an effort to develop a stable transparent gate technology. Design characteristics of the system are discussed, including 2 sections of 10 by 9 integration stages, four-phase buried channel construction, and 10 input parallel-in/serial-out output shift register at a video rate of 1.25 MHz. A quantum efficiency of 65% with smooth spectral response is attained by front surface imaging. The suitability of the system for the Landsat program is discussed in terms of TDI-CCD operating parameters.

Thompson, L. L.↗
NASA NTRS1977

Design, fabrication, and evaluation of charge-coupled devices with aluminum-anodized-aluminum gates

A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.

Gassaway, J. D.↗