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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Experimental Analysis of Distribution Network Voltage Regulation Using Smart Inverters

Smart inverters (SIs) have demonstrated their potential to provide grid services for both transmission and distribution systems. One of these grid services, distribution network voltage regulation by SIs, has the potential to improve network voltage regulation through controlling the reactive and active power output of the SIs. Voltage regulation by SIs will be distributed and might be better suited to controlling local conditions to complement traditional voltage-regulating assets, e.g., tap-changing transformers, capacitor banks, and line voltage regulators. There is a gap in the literature on comparing the SI response characteristics when the SIs are controlled by a local controller or external control signals. This paper presents an experimental study to characterize SI reactive power regulation responses to two different control methods: autonomous control and remote dispatch. We found that SI reactive power regulation responses exhibit important differences between these methods in terms of delays and ramp rate. Finally, power-hardware-in-the-loop (PHIL) tests were conducted to evaluate the performance of these two methods. The PHIL test results show that the SI response characteristics for autonomous control and remote dispatch need to be considered when planning for distribution network voltage regulation using SIs.

autonomous control↗
NASA NTRS1973

On the Design and Test of a Liquid Injection Electric Thruster

A liquid injection electric thruster (LINJET) was designed and tested. The results of the tests were very encouraging with thruster performance levels well in excess of design goals. Supporting activities to the engine design and test included a five-million pulse life test on the main capacitor, a 46-million pulse test on the trigger electronics, design and fabrication of a zero resistance torque connector for use with the torsional pendulum thrust stand, design and fabrication of a logic box for control of engine firing, and a physical and chemical properties characterization of the perfluorocarbon propellant. While the results were encouraging, testing was limited, as many problems existed with the design. The most significant problem was involved with excessive propellant flow which contributed to false triggering and shorting. Low power active thermal control of the propellant storage cavity, coupled with a re-evaluation of the injection ring pore size and area exposed to the main capacitor discharge are areas that should be investigated should this design be carried forward.

Jones, T. A.↗
DOE OSTI2025

Quantitative characterization of ZrO2 gate dielectric interface with tellurium

Tellurium (Te) has recently emerged as a promising p-type semiconductor that can be processed at low temperatures, compatible with back end of line CMOS integration. Characterization of tellurium–dielectric interfaces is essential for further device advancements. Here, the interface quality of Te with ZrO2 gate dielectric is studied in a metal-oxide semiconductor capacitor structure. The interface trap density (Dit) is measured as a function of atomic layer deposition (ALD) temperature, without the use of a seed layer. Given the low thermal budget of Te, the ALD temperature is shown to be particularly important. The lowest Dit of 5 × 1012 states/cm2 eV is obtained at a low ALD process temperature of 120 °C. To further assess the impact of Dit on device performance, field-effect transistors (FETs) were fabricated. The subthreshold swing and effective hole mobility of the FETs were analyzed in relation to Dit, emphasizing the importance of a defect-minimized interface for enhancing Te transistor performance.

Byeon, Kyeong-Jae↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Operability thresholds for thermally damaged EBW detonators

Operability thresholds that differentiate between functional RP-87 exploding bridge wire (EBW) detonators and nonfunctional RP-87 EBW detonators (duds) were determined by measuring the time delay between initiation and early wall movement (function time). The detonators were inserted into an externally heated hollow cylinder of aluminum and fired with current flow from a charged capacitor using an exploding bridge wire (EBW initiated). Functioning detonators responded like unheated pristine detonators when the function time was 4 μs or less. The operability thresholds of the detonators were characterized with a simple decomposition cookoff model calibrated using a modified version of the Sandia Instrumented Thermal Ignition (SITI) experiment. These thresholds are based on the calculated state of the PETN when the detonators fire. The operability threshold is proportional to the positive temperature difference (ΔT) between the maximum temperature within the PETN and the onset of decomposition (~406 K). Furthermore, the temperature difference alone was not sufficient to define the operability threshold. The operability threshold was also proportional to the time that the PETN had been at elevated temperatures. That is, failure was proportional to both temperature and reaction rate. The reacted gas fraction is used in the current work for the reaction correlation. Melting of PETN also had a significant effect on the operability threshold. Detonator failure occurred when the maximum temperature exceeded the nominal melting point of PETN (414 K) for 45±5 s or more.

42 ENGINEERING↗
DOE OSTI2022

Harvesting Wave Energy to Power Acoustic Transmitters Using Triboelectric Nanogenerator

Wave energy has the largest reserves and widest distribution among blue energy sources. However, the conversion and utilization of ocean wave energy are challenging. In this work, we developed a contact-separation mode triboelectric nanogenerator (TENG) with a simple structure for harvesting wave energy and powering marine sensors and transmitters and performed detailed electrical characterization under controlled laboratory conditions. A prototype power management circuit (PMC) was implemented to improve the output performance of the TENG. The output from the PMC could charge up a storage capacitor for powering sensors and electronics. Eventually, the TENG was integrated within a water-proof enclosure and tested using a custom-built wave simulator to evaluate the device performance in a more representative scenario. The device sustainably powered up an array of 27 LEDs and was able to charge up a capacitor up to 1.8 V for driving an acoustic transmitter. The results demonstrate that TENG technology shows great promise in harvesting low-frequency ocean wave energy.

Yang, Yang↗
NASA NTRS1988

A complete dc characterization of a constant-frequency, clamped-mode, series-resonant converter

The dc behavior of a clamped-mode series-resonant converter is characterized systematically. Given a circuit operating condition, the converter's mode of operation is determined and various circuit parameters are calculated, such as average inductor current (load current), rms inductor current, peak capacitor voltage, rms switch currents, average diode currents, switch turn-on currents, and switch turn-off currents. Regions of operation are defined, and various circuit characteristics are derived to facilitate the converter design.

Tsai, Fu-Sheng↗
NASA NTRS1994

Active antenna

An antenna, which may be a search coil, is connected to an operational amplifier circuit which provides negative impedances, each of which is in the order of magnitude of the positive impedances which characterize the antenna. The antenna is connected to the inverting input of the operational amplifier; a resistor is connected between the inverting input and the output of the operational amplifier; a capacitor-resistor network, in parallel, is connected between the output and the noninverting input of the operational amplifier; and a resistor is connected from the noninverting input and the circuit common. While this circuit provides a negative resistance and a negative inductance, in series, which appear, looking into the noninverting input of the operational amplifier, in parallel with the antenna, these negative impedances appear in a series loop with the antenna positive impedances, so as to algebraically add. This circuit is tuned by varying the various circuit components so that the negative impedances are very close, but somewhat less, in magnitude, to the antenna impedances. The result is to increase the sensitivity of the antenna by lowering its effective impedance. This, in turn, increases the effective area of the antenna, which may be broadband.

Sutton, John F.↗
NASA NTRS2010

Method and Circuit for In-Situ Health Monitoring of Solar Cells in Space

This innovation represents a method and circuit realization of a system designed to make in-situ measurements of test solar-cell operational parameters on orbit using readily available high-temperature and high-ionizing-radiation- tolerant electronic components. This innovation enables on-orbit in-situ solar-array health monitoring and is in response to a need recognized by the U.S. Air Force for future solar arrays for unmanned spacecraft. This system can also be constructed out of commercial-grade electronics and can be embedded into terrestrial solar power system as a diagnostics instrument. This innovation represents a novel approach to I-V curve measurement that is radiation and temperature hard, consumes very few system resources, is economical, and utilizes commercially available components. The circuit will also operate at temperatures as low as 55 C and up to +225 C, allowing it to reside close to the array in direct sunlight. It uses a swept mode transistor functioning as a resistive load while utilizing the solar cells themselves as the biasing device, so the size of the instrument is small and there is no danger of over-driving the cells. Further, this innovation utilizes nearly universal spacecraft bus resources and therefore can be readily adapted to any spacecraft bus allowing for ease of retrofit, or designed into new systems without requiring the addition of infrastructure. One unique characteristic of this innovation is that it effects the measurement of I-V curves without the use of large resistor arrays or active current sources normally used to characterize cells. A single transistor is used as a variable resistive load across the cell. This multi-measurement instrument was constructed using operational amplifiers, analog switches, voltage regulators, MOSFETs, resistors, and capacitors. The operational amplifiers, analog switches, and voltage regulators are silicon-on-insulator (SOI) technology known for its hardness to the effects of ionizing radiation. The SOI components used can tolerate temperatures up to 225 C, which gives plenty of thermal headroom allowing this circuit to perhaps reside in the solar cell panel itself where temperatures can reach over 100 C.

Krasowski, Michael J.↗
NASA NTRS2017

A Novel Solid State Ultracapacitor

Novel dielectric materials were researched to develop an internal barrier layer capacitor that is fully solid state. These materials included reduced nanoparticles of barium titanate that were coated with various atomic layer deposited oxides. The nanoparticle powders were then densified into pellets and characterized using a dielectric test fixture over a frequency range of 20 Hz to 2 MHz. Densification and sintering were evaluated using scanning electron microscopic techniques. Ultimately, the samples showing the most promising electrical characteristics of permittivity, dissipation factor and equivalent series resistance were chosen to manufacture devices for subsequent testing.

Cortes-Pena, A. Y.↗
NASA NTRS2011

Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

John, Caroline S.↗
DOE OSTI2023

Experimental Analysis of Distribution Network Voltage Regulation Using Smart Inverters: Preprint

Smart inverters (SI) have huge potential in providing grid services which has not been fully realized yet. One of these grid services, distribution network voltage regulation by SI, can improve the network voltage by regulating the SI reactive and active power output. Voltage regulation by SI is much faster compared to traditional voltage regulating devices, e.g. tap changing transformer, capacitor banks. However, there is gap in available published literature on the characteristics of SIs when the SI is controlled by local controller or external control signal. This paper presents the experimental study to characterize SI reactive power regulation response to two different control methods: autonomous control method and remote dispatch method. It was found that IS reactive power regulation response could be significantly different in terms of delay, and ramp rate for these two methods. Finally, Power-Hardware-in-The-Loop (PHIL) tests were conducted to evaluate the performance of these two methods. The PHIL tests results show that SI response characteristics for autonomous control method and remote dispatch method need to be considered during planning for distribution network voltage regulation using SI.

autonomous control↗
DOE OSTI2024

Output Capacitance Loss of GaN HEMTs in Steady-State Switching

The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1

42 ENGINEERING↗
DOE OSTI2023

Plasma-assisted deposition and characterization of Al 2 O 3 dielectric layers on (001) β -Ga 2 O 3

In this work, we have investigated plasma-assisted deposition of Al 2 O 3 on HVPE (001) β-Ga 2 O 3 and evaluated the dielectric quality from electrical measurements on fabricated metal-oxide-semiconductor (MOS) capacitors. The interface structure and crystallinity of the films were investigated as a function of the growth temperature. The dielectric/semiconductor interfaces were found to have reverse breakdown electric fields up to 5.3 MV/cm in the β-Ga 2 O 3 , with relatively low hysteresis in capacitance–voltage and low leakage current. We determined a negative fixed interface charge density at the interface from analysis of thickness-dependent capacitance voltage data. In conclusion, this study shows the advantage of using plasma-assisted deposition to achieve high breakdown strength Al 2 O 3 /β-Ga 2 O 3 MOS structures for device application purposes.

42 ENGINEERING↗
NASA NTRS1991

Makeup and uses of a basic magnet laboratory for characterizing high-temperature permanent magnets

A set of instrumentation for making basic magnetic measurements was assembled in order to characterize high intrinsic coercivity, rare earth permanent magnets with respect to short term demagnetization resistance and long term aging at temperatures up to 300 C. The major specialized components of this set consist of a 13 T peak field, capacitor discharge pulse magnetizer; a 10 in. pole size, variable gap electromagnet; a temperature controlled oven equipped with iron cobalt pole piece extensions and a removable paddle that carries the magnetization and field sensing coils; associated electronic integrators; and sensor standards for field intensity H and magnetic moment M calibration. A 1 cm cubic magnet sample, carried by the paddle, fits snugly between the pole piece extensions within the electrically heated aluminum oven, where fields up to 3.2 T can be applied by the electromagnet at temperatures up to 300 C. A sample set of demagnetization data for the high energy Sm2Co17 type of magnet is given for temperatures up to 300 C. These data are reduced to the temperature dependence of the M-H knee field and of the field for a given magnetic induction swing, and they are interpreted to show the limits of safe operation.

Niedra, Janis M.↗
NASA NTRS2011

Characterization of 720 and 940 MHz Oscillators with Chip Antenna for Wireless Sensors from Room Temperature to 200 and 250 deg C

Oscillators that operate at 720 and 940 MHz and characterized over a temperature range of 25 C to 200 C and 250 C, respectively, are presented. The oscillators are designed on alumina substrates with typical integrated circuit fabrication techniques. Cree SiC MESFETs, thin film metal-insulator-metal capacitors and spiral inductors, and Johanson miniature chip antennas make-up the circuits. The output power and phase noise are presented as a function of temperature and frequency. Index Terms MESFETS, chip antennas, oscillators SiC alumina.

Scardelletti, Maximilian C.↗
DOE OSTI2026

A First Demonstration of the SQUAT Detector Architecture: Direct Measurement of Resonator-Free Charge-Sensitive Transmons

The Superconducting Quasiparticle-Amplifying Transmon (SQUAT) is a new sensor architecture for THz (meV) detection based on a weakly charge-sensitive transmon directly coupled to a transmission line. In such devices, energy depositions break Cooper pairs in the qubit capacitor islands, generating quasiparticles. Quasiparticles that tunnel across the Josephson junction change the transmon qubit parity, generating a measurable signal. In this paper, we present the design of first-generation SQUATs and demonstrate an architecture validation. We summarize initial characterization measurements made with prototype devices, comment on background sources that influence the observed parity-switching rate, and present experimental results showing simultaneous detection of charge and quasiparticle signals using aluminum-based SQUATs.

Magoon, H. [SLAC; KIPAC, Menlo Park; Stanford U., ↗