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At least 109 records · Page 6

Electron and proton absorption calculations for a graphite/epoxy composite model

The Bethe-Bloch stopping power relations for inelastic collisions were used to determine the absorption of electron and proton energy in cured neat epoxy resin and the absorption of electron energy in a graphite/epoxy composite. Absorption of electron energy due to bremsstrahlung was determined. Electron energies from 0.2 to 4.0 MeV and proton energies from 0.3 to 1.75 MeV were used. Monoenergetic electron energy absorption profiles for models of pure graphite, cured neat epoxy resin, and graphite/epoxy composites are reported. A relation is determined for depth of uniform energy absorption in a composite as a function of fiber volume fraction and initial electron energy. Monoenergetic proton energy absorption profiles are reported for the neat resin model. A relation for total proton penetration in the epoxy resin as a function of initial proton energy is determined. Electron energy absorption in the composite due to bremsstrahlung is reported. Electron and proton energy absorption profiles in cured neat epoxy resin are reported for environments approximating geosynchronous earth orbit.

Long, E. R., Jr.↗

Use of relativistic rise in ionization chambers for measurement of high energy heavy nuclei

A balloon-borne instrument has been constructed to measure the energy spectra of cosmic-ray heavy nuclei in the range of about 0.3 to about 100 GeV/amu. It makes use of the relativistic rise portion of the Bethe-Bloch curve in ionization chambers for energy determination in the 10- to 100-GeV/amu interval. The instrument consists of six layers of dual-gap ionization chambers for energy determination above 10 GeV/amu. Charge is determined with a NE114 scintillator and a Pilot 425 plastic Cerenkov counter. A CO2 gas Cerenkov detector (1 atm; threshold of 30 GeV/amu) calibrates the ion chambers in the relativistic rise region. The main emphasis of the instrument is the determination of the change of the ratio of Iron (26) to the Iron secondaries (21-25) in the energy range of 10 to 100 GeV/amu. Preliminary data from a balloon flight in the fall of 1982 from Palestine, TX is presented.

Barthelmy, S. D.↗

Design of superlattice termination layers

Problems associated with quantum mechanical reflection of miniband carriers at the ends of superlattices are examined. Moebius transformations which map miniband Bloch wave reflectivity into plane wave reflectivity and vice versa are derived. These transformations facilitate the design of blocking and antiblocking layers which are analogous to reflective and antireflective coatings on optical elements. An example of termination layer design which is easy to implement is given. Applications include superlattice infrared detector design.

Coon, D. D.↗

Measurement of performance using acceleration control and pulse control in simulated spacecraft docking operations

Nine commercial airline pilots served as test subjects in a study to compare acceleration control with pulse control in simulated spacecraft maneuvers. Simulated remote dockings of an orbital maneuvering vehicle (OMV) to a space station were initiated from 50, 100, and 150 meters along the station's -V-bar (minus velocity vector). All unsuccessful missions were reflown. Five way mixed analysis of variance (ANOVA) with one between factor, first mode, and four within factors (mode, bloch, range, and trial) were performed on the data. Recorded performance measures included mission duration and fuel consumption along each of the three coordinate axes. Mission duration was lower with pulse mode, while delta V (fuel consumption) was lower with acceleration mode. Subjects used more fuel to travel faster with pulse mode than with acceleration mode. Mission duration, delta V, X delta V, Y delta V., and Z delta V all increased with range. Subjects commanded the OMV to 'fly' at faster rates from further distances. These higher average velocities were paid for with increased fuel consumption. Asymmetrical transfer was found in that the mode transitions could not be predicted solely from the mission duration main effect. More testing is advised to understand the manual control aspects of spaceflight maneuvers better.

Brody, Adam R.↗

Phase-space quantum mechanics study of two identical particles in an external oscillatory potential

This simple example is used to show how the formalism of Moyal works when it is applied to systems of identical particles. The symmetric and antisymmetric Moyal propagators are evaluated for this case; from them, the correct energy levels of energy are obtained, as well as the Wigner functions for the symmetric and antisymmetric states of the two identical particle system. Finally, the solution of the Bloch equation is straightforwardly obtained from the expressions of the Moyal propagators.

Nieto, Luis M.↗

Data systems and computer science space data systems: Onboard memory and storage

The topics are presented in viewgraph form and include the following: technical objectives; technology challenges; state-of-the-art assessment; mass storage comparison; SODR drive and system concepts; program description; vertical Bloch line (VBL) device concept; relationship to external programs; and backup charts for memory and storage.

Shull, Tom↗

Data storage technology comparisons

The role of data storage and data storage technology is an integral, though conceptually often underestimated, portion of data processing technology. Data storage is important in the mass storage mode in which generated data is buffered for later use. But data storage technology is also important in the data flow mode when data are manipulated and hence required to flow between databases, datasets and processors. This latter mode is commonly associated with memory hierarchies which support computation. VLSI devices can reasonably be defined as electronic circuit devices such as channel and control electronics as well as highly integrated, solid-state devices that are fabricated using thin film deposition technology. VLSI devices in both capacities play an important role in data storage technology. In addition to random access memories (RAM), read-only memories (ROM), and other silicon-based variations such as PROM's, EPROM's, and EEPROM's, integrated devices find their way into a variety of memory technologies which offer significant performance advantages. These memory technologies include magnetic tape, magnetic disk, magneto-optic disk, and vertical Bloch line memory. In this paper, some comparison between selected technologies will be made to demonstrate why more than one memory technology exists today, based for example on access time and storage density at the active bit and system levels.

Katti, Romney R.↗

Q-derivatives, coherent states and squeezing

We show that the q-deformation of the Weyl-Heisenberg (q-WH) algebra naturally arises in discretized systems, coherent states, squeezed states and systems with periodic potential on the lattice. We incorporate the q-WH algebra into the theory of (entire) analytical functions, with applications to theta and Bloch functions.

Celeghini, E.↗

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗

Predicting the stability of a compressible periodic parallel jet flow

It is known that mixing enhancement in compressible free shear layer flows with high convective Mach numbers is difficult. One design strategy to get around this is to use multiple nozzles. Extrapolating this design concept in a one dimensional manner, one arrives at an array of parallel rectangular nozzles where the smaller dimension is omega and the longer dimension, b, is taken to be infinite. In this paper, the feasibility of predicting the stability of this type of compressible periodic parallel jet flow is discussed. The problem is treated using Floquet-Bloch theory. Numerical solutions to this eigenvalue problem are presented. For the case presented, the interjet spacing, s, was selected so that s/omega =2.23. Typical plots of the eigenvalue and stability curves are presented. Results obtained for a range of convective Mach numbers from 3 to 5 show growth rates omega(sub i)=kc(sub i)/2 range from 0.25 to 0.29. These results indicate that coherent two-dimensional structures can occur without difficulty in multiple parallel periodic jet nozzles and that shear layer mixing should occur with this type of nozzle design.

Miles, Jeffrey H.↗

Collective Interaction of a Compressible Periodic Parallel Jet Flow

A linear instability model for multiple spatially periodic supersonic rectangular jets is solved using Floquet-Bloch theory. The disturbance environment is investigated using a two dimensional perturbation of a mean flow. For all cases large temporal growth rates are found. This work is motivated by an increase in mixing found in experimental measurements of spatially periodic supersonic rectangular jets with phase-locked screech. The results obtained in this paper suggests that phase-locked screech or edge tones may produce correlated spatially periodic jet flow downstream of the nozzles which creates a large span wise multi-nozzle region where a disturbance can propagate. The large temporal growth rates for eddies obtained by model calculation herein are related to the increased mixing since eddies are the primary mechanism that transfer energy from the mean flow to the large turbulent structures. Calculations of growth rates are presented for a range of Mach numbers and nozzle spacings corresponding to experimental test conditions where screech synchronized phase locking was observed. The model may be of significant scientific and engineering value in the quest to understand and construct supersonic mixer-ejector nozzles which provide increased mixing and reduced noise.

Miles, Jeffrey Hilton↗

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

The main objective of the Joint-Research Interchange NCC2-5149 was to develop computer codes for accurate simulation of femtosecond pulse propagation in semiconductor lasers and semiconductor amplifiers [I]. The code should take into account all relevant processes such as the interband and intraband carrier relaxation mechanisms and the many-body effects arising from the Coulomb interaction among charge carriers [2]. This objective was fully accomplished. We made use of a previously developed algorithm developed at NASA Ames [3]-[5]. The new algorithm was tested on several problems of practical importance. One such problem was related to the amplification of femtosecond optical pulses in semiconductors. These results were presented in several international conferences over a period of three years. With the help of a postdoctoral fellow, we also investigated the origin of instabilities that can lead to the formation of femtosecond pulses in different kinds of lasers. We analyzed the occurrence of absolute instabilities in lasers that contain a dispersive host material with third-order nonlinearities. Starting from the Maxwell-Bloch equations, we derived general multimode equations to distinguish between convective and absolute instabilities. We find that both self-phase modulation and intensity-dependent absorption can dramatically affect the absolute stability of such lasers. In particular, the self-pulsing threshold (the so-called second laser threshold) can occur at few times the first laser threshold even in good-cavity lasers for which no self-pulsing occurs in the absence of intensity-dependent absorption. These results were presented in an international conference and published in the form of two papers.

Agrawal, Govind P.↗

A Synthesis of Fluid Dynamics and Quantum Chemistry for the Design of Nanoelectronics

In 1959, during a famous lecture entitled "There's Plenty of Room at the Bottom", Richard Feynman focused on the startling technical possibilities that would exist at the limit of miniaturization, that being atomically precise devices with dimensions in the nanometer range. A nanometer is both a convenient unit of length for medium to large sized molecules, and the root of the name of the new interdisciplinary field of "nanotechnology". Essentially, "nanoelectronics" denotes the goal of shrinking electronic devices, such as diodes and transistors, as well as integrated circuits of such devices that can perform logical operations, down to dimensions in the range of 100 nanometers. The thirty-year hiatus in the development of nanotechnology can figuratively be seen as a period of waiting for the bottom-up and atomically precise construction skills of synthetic chemistry to meet the top-down reductionist aspirations of device physics. The sub-nanometer domain of nineteenth-century classical chemistry has steadily grown, and state-of-the-art supramolecular chemistry can achieve atomic precision in non-repeating molecular assemblies of the size desired for nanotechnology. For nanoelectronics in particular, a basic understanding of the electron transport properties of molecules must also be developed. Quantum chemistry provides powerful computational methods that can accurately predict the properties of small to medium sized molecules on a desktop workstation, and those of large molecules if one has access to a supercomputer. Of the many properties of a molecule that quantum chemistry routinely predicts, the ability to carry a current is one that had not even been considered until recently. "Currently", there is a controversy over just how to define this key property. Reminiscent of the situation in high-Tc superconductivity, much of the difficulty arises from the different models that are used to simplify the complex electronic structure of real materials. A model-independent approach has been proposed, that sacrifices the plentiful molecular orbitals and Bloch functions of conventional approaches, for a single three-dimensional observable quantity, the electron momentum density Pi(sub rho). This quantity is simply the probability of any electron having momentum rho, multiplied by the total number of electrons in the system (the position of the electron is uncertain). We have explored the utility of this new approach in providing a fundamental understanding of the electron transport properties of molecules that have provi been nominated as candidates for components in the design of nanoelectronics; phenylene-ethynylene oligomers. Some of the molecular systems that have been studied are sketched below.

MacDougall, Preston J.↗

Collective Interaction in a Linear Array of Supersonic Rectangular Jets: A Linear Spatial Instability Study

A linear spatial instability model for multiple spatially periodic supersonic rectangular jets is solved using Floquet-Bloch theory. It is assumed that in the region of interest a coherent wave can propagate. For the case studied large spatial growth rates are found. This work is motivated by an increase in mixing found in experimental measurements of spatially periodic supersonic rectangular jets with phase-locked screech and edge tone feedback locked subsonic jets. The results obtained in this paper suggests that phase-locked screech or edge tones may produce correlated spatially periodic jet flow downstream of the nozzles which creates a large span wise multi-nozzle region where a coherent wave can propagate. The large spatial growth rates for eddies obtained by model calculation herein are related to the increased mixing since eddies are the primary mechanism that transfer energy from the mean flow to the large turbulent structures. Calculations of spacial growth rates will be presented for a set of relative Mach numbers and spacings for which experimental measurements have been made. Calculations of spatial growth rates are presented for relative Mach numbers from 1.25 to 1.75 with ratios of nozzle spacing to nozzle width ratios from s/w(sub N) = 4 to s/w(sub N) = 13.7. The model may be of significant scientific and engineering value in the quest to understand and construct supersonic mixer-ejector nozzles which provide increased mixing and reduced noise.

Miles, Jeffrey Hilton↗

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗

Exciton Absorption in Semiconductor Quantum Wells Driven by a Strong Intersubband Pump Field

Optical interband excitonic absorption of semiconductor quantum wells (QW's) driven by a coherent pump field is investigated based on semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW's. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron-hole pairs in the QW structure is low, the pump field induces an Autler-Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron-hole pairs is increased, the split contrast (the ratio between the maximum and minimum values) is decreased because the exciton effect is suppressed at higher densities due to the many-body screening.

Liu, Ansheng↗

Transverse Mode Dynamics of VCSELs Undergoing Current Modulation

Transverse mode dynamics of a 20-micron-diameter vertical-cavity surface-emitting laser (VCSEL) undergoing gain switching by deep current modulation is studied numerically. The direct current (dc) level is set slightly below threshold and is modulated by a large alternating current (ac). The resulting optical pulse train and transverse-mode patterns are obtained numerically. The ac frequency is varied from 2.5 GHz to 10 GHz, and the ac amplitude is varied from one-half to four times that of the dc level. At high modulation frequencies, a regular pulse train is not generated unless the ac amplitude is large enough. At all modulation frequencies, the transverse spatial profile switches from single-mode to multiple-mode pattern as the ac pumping level is increased. Optical pulse widths vary in the range 5-30 ps. with the pulse width decreasing when either the frequency is increased or the ac amplitude is decreased. The numerical modeling uses an approximation form of the semiconductor Maxwell-Bloch equations. Temporal evolution of the spatial profiles of the laser (and of carrier density) is determined without any assumptions about the type or number of modes. Keywords: VCSELs, current modulation, gain switching, transverse mode dynamics, computational modeling

Goorjian, Peter M.↗

Modeling of Optoelectronic Devices

Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.

Li, Jian-Zhong↗