Roles of ZnTe Buffer Layers on CdTe Solar Cell Performance
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14 SOLAR ENERGY↗
SEARCH · Engineering Papers
Results for “backing layers”
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Fundamental absorption bandwidth to thickness limit for transparent homogeneous layers
Abstract Past work has considered the analytic properties of the reflection coefficient for a metal-backed slab. The primary result established a fundamental relationship for the minimal layer thickness to bandwidth ratio achievable for an absorber. There has yet to be establishment of a similar relationship for non-metal-backed layers, and here we present the universal result based on the Kramers–Kronig relations. Our theory is validated with transfer matrix calculations of homogeneous materials, and full-wave numerical simulations of electromagnetic metamaterials. Our results place more general fundamental limits on absorbers and thus will be important for both fundamental and applied studies.
Padilla, Willie J.↗
Optimized silicon solar cells for space exploration power systems
A program is described aimed at designing and fabricating improved silicon solar cells for a range of missions extending from 0.1 to 15 astronomical units (Mercury to Jupiter). For missions lying inside Earth radius (Mercury, Venus) the major cell property required was very low series resistance, allowing high curve fill factor to be maintained at the higher intensities. For the Mercury mission, the temperature of the cell had to be kept low. This was achieved by reflecting more of the incident sunlight by use of large area front contacts. For the outer missions (Mars, the Asteroid belts and Jupiter) the formation of a Schottky barrier at the back contact had to be avoided (by use of a P+ layer under the back contact) and the excess leakage current of the PN junction had to be reduced. Optimum grid patterns were also derived and used for these missions.
Iles, P. A.↗
Mo layer thickness requirement on the ion source back plate for the HNB and DNB ion sources in ITER
All the inner surfaces of the ion sources and the upstream surface of the plasma grid of the ITER neutral beam ion sources are proposed to be coated with molybdenum. This is done to avoid sputtering of the base material (Cu or CuCrZr) by the ions in the source plasma (D{sup +}, D{sub 2}{sup +}, D{sub 3}{sup +} or H{sup +}, H{sub 2}{sup +}, H{sub 3}{sup +}). The sputtering of Mo by the ions in the source plasma is low compared to that from Cu, and the threshold energy for sputtering ∼80 eV) is high compared to the energy of the ions in the source. However the D{sub 2}{sup +}, H{sub 2}{sup +} and D{sup +}, H{sup +} ions backstreaming from the accelerators will have energies that substantially exceed that threshold and it is important that the Mo layer is not eroded such that the base material is exposed to the source plasma. In the case of the HNB, the backstreaming ion power is calculated to be in the order of ∼1 MW, and the average energy of the backstreaming ions is calculated to be ∼300 keV. The ion sources in the HNB beam lines, 40 A 1 MeV D and 46 A 870 keV H beams, are supposed to operate for a period of 2 x 10{sup 7} s. For the DNB, 60 A 100 keV H beams, the corresponding number is 1.4 × 10{sup 6} s considering a beam duty cycle of 3s ON/20s OFF with 5 Hz modulation. The Mo layer on the ion source back plate should be thick enough to survive this operational time. Thickness estimation has been carried out taking into account the sputtering yields (atoms/ion), the energy spectrum of the backstreaming ions and the estimated profiles on the ion source back plate.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors
A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.
Hoenk, Michael E.↗
Display screen and method of manufacture therefor
A screen assembly that combines an angle re-distributing prescreen with a conventional diffusion screen is disclosed. The prescreen minimizes or eliminates the sensitivity of the screen assembly to projector location. The diffusion screen provides other desirable screen characteristics. The prescreen is preferably formed by a collection of light transmitting and refracting elements, preferably spheres 80, partially embedded in a light blocking layer. Toward the back of the spheres 80 are effective apertures 82 where the light blocking layer 81 is absent or at least thinner than in other regions toward the side of the spheres. The projected image enters spheres 80 through the effective apertures 82, and exits the spheres 80 centered orientationally about the normal to the lens axis. The re-oriented light rays then enter the diffusion screen for viewing.
Dubin, Matthew B.↗
Triboelectric nanogenerator for powering portable electronics
A triboelectric generator includes a first contact charging member and a second contact charging member. The first contact charging member includes a first contact layer and a conductive electrode layer. The first contact layer includes a material that has a triboelectric series rating indicating a propensity to gain electrons due to a contacting event. The conductive electrode layer is disposed along the back side of the contact layer. The second contact charging member is spaced apart from and disposed oppositely from the first contact charging member. It includes an electrically conductive material layer that has a triboelectric series rating indicating a propensity to lose electrons when contacted by the first contact layer during the contacting event. The electrically conductive material acts as an electrode. A mechanism maintains a space between the first contact charging member and the second contact charging member except when a force is applied thereto.
36 MATERIALS SCIENCE↗
Triboelectric nanogenerator for powering portable electronics
A triboelectric generator includes a first contact charging member and a second contact charging member. The first contact charging member includes a first contact layer and a conductive electrode layer. The first contact layer includes a material that has a triboelectric series rating indicating a propensity to gain electrons due to a contacting event. The conductive electrode layer is disposed along the back side of the contact layer. The second contact charging member is spaced apart from and disposed oppositely from the first contact charging member. It includes an electrically conductive material layer that has a triboelectric series rating indicating a propensity to lose electrons when contacted by the first contact layer during the contacting event. The electrically conductive material acts as an electrode. A mechanism maintains a space between the first contact charging member and the second contact charging member except when a force is applied thereto.
Wang, Zhong Lin↗
Experimental Study of Convective Heating on the Back Face and Payload of a Hypersonic Inflatable Aerodynamic Decelerator (HIAD) Aeroshell
A wind tunnel test program has been conducted to define convective heating environments on the back-face of a Hypersonic Inflatable Aerodynamic Decelerator aeroshell. Wind tunnel testing was conducted at Mach 6 and Mach 10 at unit Reynolds numbers from 0.5×10(exp 6)/ft to 3.9×10(exp 6)/ft on a 6.3088 in diameter aeroshell model. Global heating data were obtained through phosphor thermography on the aeroshell back face, as well as on the payload and the aeroshell front face. For all test conditions, laminar flow was produced on the aeroshell front face, while the separated wake shear layer and aeroshell back-face boundary layer were transitional or turbulent. Along the leeward centerline of the aeroshell back face and payload centerbody, heating levels increased with both free stream Reynolds number and angle of attack. The Reynolds number dependency was due to increasing strength of wake turbulence with Reynolds number. The angle-of-attack dependency was due to movement of the wake-vortex reattachment point on the aeroshell back face. The maximum heating levels on the aeroshell back face and payload were approximately 5% to 6%, respectively, of the aeroshell front-face stagnation point. To allow for extrapolation of the ground test data to flight conditions, the back face and payload heating levels were correlated as a function of aeroshell front-face peak momentum thickness Reynolds numbers.
Hollis, Brian R.↗
Toughened Thermal Blanket for MMOD Protection
Thermal blankets are used extensively on spacecraft to provide passive thermal control of spacecraft hardware from thermal extremes encountered in space. Toughened thermal blankets have been developed that greatly improve protection from hypervelocity micrometeoroid and orbital debris (MMOD) impacts. These blankets can be outfitted if so desired with a reliable means to determine the location, depth and extent of MMOD impact damage by incorporating an impact sensitive piezoelectric film. Improved MMOD protection of thermal blankets was obtained by adding selective materials at various locations within the thermal blanket. As given in Figure 1, three types of materials were added to the thermal blanket to enhance its MMOD performance: (1) disrupter layers, near the outside of the blanket to improve breakup of the projectile, (2) standoff layers, in the middle of the blanket to provide an area or gap that the broken-up projectile can expand, and (3) stopper layers, near the back of the blanket where the projectile debris is captured and stopped. The best suited materials for these different layers vary. Density and thickness is important for the disrupter layer (higher densities generally result in better projectile breakup), whereas a highstrength to weight ratio is useful for the stopper layer, to improve the slowing and capture of debris particles.
Christiansen, Eric L.↗
Short-circuit current improvement in thin cells with a gridded back contact
The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.
Giuliano, M.↗
The effect of a defective BSF layer on solar cell open circuit voltage
A straightforward analysis of special limiting cases has permitted the determination of the range of possible open circuit voltage losses due to a defective BSF (back surface field) layer. An important result of the analysis is the finding that it is possible to have a fully effective BSF region, regardless of the spatial distribution of the defective areas, as long as the total defective area is reduced below certain limits. Distributed defects were found to be much more harmful than lumped defects.
Weizer, V. G.↗
Sputter-Deposited Oxides for Interface Passivation of CdTe Photovoltaics
Commercial CdTe PV modules have polycrystalline thin films deposited on glass, and devices made in this format have exceeded 22% efficiency. Devices made by the authors with a magnesium zinc oxide window layer and tellurium back contact have achieved efficiency over 18%, but these cells still suffer from an open-circuit voltage far below ideal values. Oxide passivation layers made by sputter deposition have the potential to increase voltage by reducing interface recombination. CdTe devices with these passivation layers were studied with photoluminescence (PL) emission spectroscopy and time-resolved photoluminescence (TRPL) to detect an increase in minority carrier lifetime. Because these oxide materials exhibit barriers to carrier collection, micropatterning was used to expose small point contacts while still allowing interface passivation. TRPL decay lifetimes have been greatly enhanced for thin polycrystalline absorber films with interface passivation. Device performance was measured and current collection was mapped spatially by light-beam-induced current.
14 SOLAR ENERGY↗
Adaptive neural network management system
A method and computer system for managing a neural network. Data is sent into an input layer in a portion of layers of nodes in the neural network. The data moves on an encode path through the portion such that an output layer in the portion outputs encoded data. The encoded data is sent into the output layer on a decode path through the portion back to the input layer to obtain a reconstruction of the data by the input layer. A determination is made as to whether an undesired amount of error has occurred in the output layer based on the data sent into the input layer and the reconstruction of the data. A number of new nodes is added to the output layer when a determination is present that the undesired amount of the error occurred, enabling reducing the error using the number of the new nodes.
Draelos, Timothy J.↗
Preliminary study of cyclic thermal shock resistance of plasma-sprayed zirconium oxide turbine outer air seal shrouds
Several experimental concepts representing potential high pressure turbine seal material systems were subjected to cyclic thermal shock exposures similar to those that might be encountered under severe engine start-up and shut-down sequences. All of the experimental concepts consisted of plasma-sprayed yttria stabilized ZrO2 on the high temperature side of the blade tip seal shroud. Between the ZrO2 and a cooled, dense metal backing, various intermediate layer concepts intended to mitigate thermal stresses were incorporated. Performance was judged on the basis of the number of thermal shock cycles required to cause loss of seal material through spallation. The most effective approach was to include a low modulus, sintered metal pad between the ZrO2 and the metallic backing. It was also found that reducing the density of the ZrO2 layer significantly improved the performance of specimens with plasma-sprayed metal/ceramic composite intermediate layers.
Bill, R. C.↗
Material growth and characterization for solid state devices
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.
Collis, Ward J.↗
Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer
Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.
42 ENGINEERING↗
Delta-Doped CCDs for Enhanced UV Performance
Thin, backside-illuminated CCds are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100 percent internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully-processed commercial CCd die in which 30 percent of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months.
silicon↗