Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “antireflection”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Single crystal and polycrystalline GaAs solar cells using AMOS technology

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

Stirn, R. J.↗
NASA NTRS1978

Viking infrared thermal mapper

The infrared thermal mapper (IRTM) was designed to measure the emitted and reflected radiance of Mars. Carried by the Viking Orbiter, the IRTM contains four small Cassegrainian telescopes which each image the same, seven circular areas. There is a total of twenty-eight channels in four surface and one atmospheric thermal bands from 6 to 30 microns and a broad solar reflectance band. All channels are sampled simultaneously, using the spacecraft scanning capability to map the radiance over small and large areas of the planet. All channels use thermopile detectors; spectral passbands are determined by a combination of interference filters, detector lense materials, antireflection coatings, and restrahlen optics.

Chase, S. C., Jr.↗
NASA NTRS1978

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.

Yeh, Y. C. M.↗
NASA NTRS1979

Anti-reflection Coatings on Large Area Glass Sheets

The first quarter of a one-year program designed to research and perfect a method of producing antireflective coatings on large glass sheets through the use of sodium silicate hardened by exposure to acid is reported. The requirements for a linear motion device used to produce uniform sodium silicate films were determined. A search for a commercially available device is underway. Sodium silicate solutions of varying concentrations were prepared. Determinations of the physical properties relevant to film thickness are in progress. In addition, material costs are being recorded for later use in a cost analysis of the method. All tasks of the project are proceeding according to schedule. Of the tasks, only the sodium silicate solution preparation is complete.

Pastirik, E.↗
NASA NTRS1979

Development of High Efficiency (14%) Solar Cell Array Module

High efficiency solar cells required for the low cost modules was developed. The production tooling for the manufacture of the cells and modules was designed. The tooling consisted of: (1) back contact soldering machine; (2) vacuum pickup; (3) antireflective coating tooling; and (4) test fixture.

Iles, P. A.↗
NASA NTRS1978

The Array Automated Assembly Task for the Low Cost Solar Array Project, Phase 2

During the program a process sequence was proposed and tested for the fabrication of dendritic welb silicon into solar modules. This sequence was analyzed as to yield and cost and these data suggest that the price goals of 1986 are attainable. Specifically, it was shown that a low cost POCL3 is a suitable replacement for the semiconductor grade, and that a suitable CVD oxide can be deposited from a silane/air mixture using a Silox reactor. A dip coating method was developed for depositing an antireflection coating from a metalorganic precursor. Application of photoresist to define contact grids was made cost effective through use of a dip coating technique. Electroplating of both Ag and Cu was shown feasible and cost effective for producing the conductive metal grids on the solar cells. Laser scribing was used to separate the cells from the dendrites without degradation. Ultrasonic welding methods were shown to be feasible for interconnecting the cells. A study of suitable low cost materials for encapsulation suggest that soda lime glass and phenolic filled board are preferred.

Campbell, R. B.↗
NASA NTRS1979

Automated aray assembly, phase 2

A manufacturing process suitable for the large-scale production of silicon solar array modules at a cost of less than $500/peak kW is described. Factors which control the efficiency of ion implanted silicon solar cells, screen-printed thick film metallization, spray-on antireflection coating process, and panel assembly are discussed. Conclusions regarding technological readiness or cost effectiveness of individual process steps are presented.

Daiello, R. V.↗
NASA NTRS1979

Automated Array Assembly, Phase 2

The large scale production of silicon solar cell array panels is discussed. The cost and performance of three manufacturing sequences designed to convert silicon sheet and wafers into solar panels is analyzed. The production of ion implanted and furnace annealed solar cells made using solar grade n- and p-type wafers is examined. The performance of production size lots is examined with regard to the relationship between the ion implant and furnace anneal parameters and the ability to form consistently good thick film screen printed contacts. The spray on antireflection coating process is evaluated. The performance of several lots of cells before and after coating is measured. The structure and refractive index of the RCA I (TiO2) coating is compared with commercial solutions. Sensitivity of coated, screen printed cells to the post heat treatment required to cure the films is assessed.

Daiello, R. V.↗
NASA NTRS1978

Array Automated Assembly Task Low Cost Silicon Solar Array Project, Phase 2

Progress in the development of solar cells and module process steps for low-cost solar arrays is reported. Specific topics covered include: (1) a system to automatically measure solar cell electrical performance parameters; (2) automation of wafer surface preparation, printing, and plating; (3) laser inspection of mechanical defects of solar cells; and (4) a silicon antireflection coating system. Two solar cell process steps, laser trimming and holing automation and spray-on dopant junction formation, are described.

Rhee, S. S.↗
NASA NTRS1979

High efficiency cell geometry

A new silicon solar cell is described which has an array of small-area conduction paths to transport current directly through the wafer to metal electrodes on the back. This design eliminates grid shadowing and many of the other losses inherent in conventional cells. Early experimental units without texturing or antireflection coatings show 13.3% efficiency under air-mass-one illumination insolation.

Hall, R. N.↗
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS1979

Investigation of Proposed Process Sequence for the Array Automated Assembly Task, Phase 2

The technological readiness of the proposed process sequence was reviewed. Process steps evaluated include: (1) plasma etching to establish a standard surface; (2) forming junctions by diffusion from an N-type polymeric spray-on source; (3) forming a p+ back contact by firing a screen printed aluminum paste; (4) forming screen printed front contacts after cleaning the back aluminum and removing the diffusion oxide; (5) cleaning the junction by a laser scribe operation; (6) forming an antireflection coating by baking a polymeric spray-on film; (7) ultrasonically tin padding the cells; and (8) assembling cell strings into solar circuits using ethylene vinyl acetate as an encapsulant and laminating medium.

Mardesich, N.↗
NASA NTRS1979

State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes

Ga(0.15)Al(0.85)As/GaAs avalanche photodiodes have been successfully fabricated. The performance of these detectors is characterized by a rise time of less than 35 ps, an external quantum efficiency with an antireflection coating of 95% at 0.53 microns, and a microwave optical gain of 42 dB. The dark current density is in the low range (10 to the minus A/sq cm) at one-half the breakdown voltages, and rises to 0.0001 A/sq cm at 42 dB optical gain.

Law, H. D.↗
NASA NTRS1980

Thermal performance evaluation of the Suncatcher SH-11 (liquid) solar collector

The procedures used and the results obtained during the evaluation test program on the Solar Unlimited, Inc., Suncatcher SH-11 (liquid) solar collector are presented. The flat-plate collector case assembly is made of .08 inch aluminum 3003 H14 riveted with fiberglass board insulation. The absorber consists of collared aluminum fins mechanically bonded to 3/8 inch copper tubing and coated with 3M Nextel black. Water is used as the working fluid. The glazing is made of a single glass, 1/8 inch water white, tempered and antireflective. The collector weight is 85 pounds with overall external dimensions of about 35.4 in x 82.0 in x 4.0 in. Thermal performance data on the Solar Unlimited Suncatcher SH-11 solar collector under simulated conditions were conducted using the MSFC Solar Simulator.

Source record↗
NASA NTRS1980

Glass for low-cost photovoltaic solar arrays

Various aspects of glass encapsulation that are important for the designer of photovoltaic systems are discussed. Candidate glasses and available information defining the state of the art of glass encapsulation materials and processes for automated, high volume production of terrestrial photovoltaic devices and related applications are presented. The criteria for consideration of the glass encapsulation systems were based on the low-cost solar array project goals for arrays: (1) a low degradation rate, (2) high reliability, (3) an efficiency greater than 10 percent, (4) a total array price less than $500/kW, and (5) a production capacity of 500,000 kW/yr. The glass design areas discussed include the types of glass, sources and costs, physical properties, and glass modifications, such as antireflection coatings.

Bouquet, F. L.↗
NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗
NASA NTRS1980

Anti-reflection coatings on large area glass sheets

Antireflective coatings which may be suitable for use on the covers of photovoltaic solar modules can be easily produced by a dipping process. The coatings are applied to glass by drawing sheets of glass vertically out of dilute aqueous sodium silicate solutions at a constant speed, allowing the adherent liquid film to dry, then exposing the dried film to concentrated sulfuric acid, followed by a water rinse and dry. The process produces coatings of good optical performance (96.7 percent peak transmission at 0.540 mu M wavelength) combined with excellent stain and soil resistance, and good resistance to abrasion. The process is reproduceable and easily controlled.

Pastirik, E.↗
NASA NTRS1981

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Yeh, Y. C. M.↗