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At least 109 records · Page 6

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DOE OSTI2020

Electrical control of coherent spin rotation of a single-spin qubit

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. One of the critical challenges to develop NV-based quantum operation platforms results from the difficulty in locally addressing the quantum spin states of individual NV spins in a scalable, energy-efficient manner. Here, we report electrical control of the coherent spin rotation rate of a single-spin qubit in NV-magnet based hybrid quantum systems. By utilizing electrically generated spin currents, we are able to achieve efficient tuning of magnetic damping and the amplitude of the dipole fields generated by a micrometer-sized resonant magnet, enabling electrical control of the Rabi oscillation frequency of NV spins. Our results highlight the potential of NV centers in designing functional hybrid solid-state systems for next-generation quantum-information technologies. The demonstrated coupling between the NV centers and the propagating spin waves harbored by a magnetic insulator further points to the possibility to establish macroscale entanglement between distant spin qubits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2025

Single nuclear spin detection and control in a van der Waals material

Optically active spin defects in solids are leading candidates for quantum sensing and quantum networking. Recently, single spin defects were discovered in hexagonal boron nitride (hBN), a layered van der Waals (vdW) material. Owing to its two-dimensional structure, hBN allows spin defects to be positioned closer to target samples than in three-dimensional crystals, making it ideal for atomic-scale quantum sensing, including nuclear magnetic resonance (NMR) of single molecules. However, the chemical structures of these defects remain unknown and detecting a single nuclear spin with a hBN spin defect has been elusive. Here we report the creation of single spin defects in hBN using 13 C ion implantation and the identification of three distinct defect types based on hyperfine interactions. We observed both S = 1/2 and S = 1 spin states within a single hBN spin defect. We demonstrated atomic-scale NMR and coherent control of individual nuclear spins in a vdW material, with a π-gate fidelity up to 99.75% at room temperature. By comparing experimental results with density functional theory (DFT) calculations, we propose chemical structures for these spin defects. Our work advances the understanding of single spin defects in hBN and provides a pathway to enhance quantum sensing using hBN spin defects with nuclear spins as quantum memories.

Quantum metrology↗

DOE OSTI2023

N-Doped carbon nanoparticles on highly porous carbon nanofiber electrodes for sodium ion batteries

Nitrogen doped carbon nanoparticles on highly porous carbon nanofiber electrodes were successfully synthesized via combining centrifugal spinning, chemical polymerization of pyrrole and a two-step heat treatment. Nanoparticle-on-nanofiber morphology with highly porous carbon nanotube like channels were observed from SEM and TEM images. Nitrogen doped carbon nanoparticles on highly porous carbon nanofiber (N-PCNF) electrodes exhibited excellent cycling and C-rate performance with a high reversible capacity of around 280 mA h g -1 in sodium ion batteries. Moreover, at 1000 mA g -1 , a high reversible capacity of 172 mA h g -1 was observed after 300 cycles. The superior electrochemical properties were attributed to a highly porous structure with enlarged d-spacings, enriched defects and active sites due to nitrogen doping. The electrochemical results prove that N-PCNF electrodes are promising electrode materials for high performance sodium ion batteries.

25 ENERGY STORAGE↗

DOE OSTI2022

Designing silicon carbide heterostructures for quantum information science: challenges and opportunities

Abstract Silicon carbide (SiC) can be synthesized in a number of different structural forms known as polytypes with a vast array of optically active point defects of interest for quantum information sciences. The ability to control and vary the polytypes during SiC synthesis may offer a powerful methodology for the formation of new material architectures that expand our ability to manipulate these defects, including extending coherence lifetimes and enhancing room temperature operation. Polytypic control during synthesis presents a significant challenge given the extreme conditions under which SiC is typically grown and the number of factors that can influence polytype selection. In situ monitoring of the synthesis process could significantly expand our ability to formulate novel polytype structures. In this perspective, we outline the state of the art and ongoing challenges for precision synthesis in SiC. We discuss available in situ x-ray characterization methods that will be instrumental in understanding the atomic scale growth of SiC and defect formation mechanisms. We highlight optimistic use cases for SiC heterostructures that will become possible with in situ polytypic control and end by discussing extended opportunities for integration of ultrahigh quality SiC materials with other semiconductor and quantum materials.

Harmon, K. J. (ORCID:0000000164277971)↗

DOE OSTI2023

Origin of surface and subband states at the InAs(111)A surface

The atomic structure of surfaces and interfaces plays a vital role in the electronic quality and properties of quantum devices. The interplay between the surface and confined bulk subband states in terms of their susceptibility has been investigated in relation to crystal defects on an InAs(111)A-(2×2) reconstructed surface, using low-temperature scanning tunneling microscopy and spectroscopy. We measure the two-dimensional quantized subband states arising from the confined potential imposed by downward bending of the conduction band edge. Furthermore, we show evidence of the existence of surface Bloch states within the confined bulk band gap projected on the surface spectrum which have originated from the surface reconstruction. As expected, larger confined bulk band gaps at the surface and conduction band offset are measured to be 0.58 and 0.31 eV, respectively. Here we further show the scattering of these quantum states at different surface defects and demonstrate that surface states are more susceptible to the defect potential when compared with the corresponding subband states. This apparent contrast follows from the length scale at which these defect potentials actively interact on or near the surface. Our observed experimental results are supported by empirical tight-binding simulations for the subband states and first-principles density functional theory simulations for the surface states present on the surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1974

Exoelectronic emission of particles of lunar surface material

A secondary electron multiplier was used to study the thermostimulated exoelectronic emission of particles of lunar surface material returned by the Soviet Luna 16 automatic station. The natural exoemission from fragments of slag, glass, anorthosite, and a metallic particle was recorded in the isochronic and isothermal thermostimulation regimes. The temperature of emission onset depended on the type of regolith fragment. For the first three particles the isothermal drop in emission is described by first-order kinetic equations. For the anorthosite fragment, exoemission at constant temperature is characterized by a symmetric curve with a maximum. These data indicate the presence of active surface defects, whose nature can be due to the prehistory of the particles.

Mints, R. I.↗

NASA NTRS1981

Laser annealing of ion implanted CZ silicon for solar cell junction formation

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Katzeff, J. S.↗

NASA NTRS1981

Laser processing of silicon solar cells

Results of a study to utilize an Nd:glass laser for production line annealing of ion implantation induced damage in solar cells are reported. Czochralski-grown and sawn Si wafers 7.6 cm in diam, 0.35 mm thick, were implanted with phosphorus junctions and boron BSFs. Annealing with electron beam, laser, and firing of an Al paste to form the BSFs in different cells was compared. The laser was employed at 1.06 and 0.53 micron and in combination of both, with a 20-50 nsec pulsewidth, and energy densities of 1.2, 1.5, 1.9, and 2.1 J/sq cm. Best optical coupling was observed with the combined wavelengths and a 20 nsec pulse, using energy densities less than 1.5 J/sq cm. Although the Al sintered cells displayed the best characteristics, laser annealing is concluded to offer electrically active, defect-free, shallow junction Si substrates for high efficiency cells.

Katzeff, J. S.↗

NASA NTRS1983

Mode of incorporation of phosphorus in Hg(0.8)Cd(0.2)Te

Selim and Kroeger (1977) have studied the mode of incorporation of phosphorus in CdTe. According to their findings, phosphorus behaves amphoterically in CdTe acting as an acceptor interstitially and on Te lattice sites, and as a triple donor on Cd lattice sites. The present investigation is concerned with the role of phosphorus in Hg(0.8)Cd(0.2)Te, taking into account Hall-effect and mobility measurements on phosphorus-doped crystals quenched from a temperature in the range from 450 to 600 C subsequent to anneals in different partial pressures of Hg. It is found that the behavior of phosphorus in Hg(0.8)Cd(0.2)Te is similar to that established for CdTe, except that all the electrically active phosphorus defect centers in Hg(0.8)Cd(0.2)Te appear to be only singly ionized. At low Hg pressure, phosphorus is incorporated as a single donor occupying Hg lattice sites, and at high Hg pressure, as a single acceptor on interstitial sites and Te lattice sites.

Vydyanath, H. R.↗

NASA NTRS2021

Development and Characterization of Lightweight Durable Composite Conductor for Cables

Sustainable aviation in the form of electrified propulsion is likely to lead to an increase in the electrical assets contained within a single aircraft. As a result, it is desirable to design light weight conductor materials, thus reducing the payload of components like motor windings, low voltage signal cables, and transmission cables for data and power. One approach involves replacing pure Cu wiring with metalized CNT composites. This paper evaluates a framework for modeling overall conductivity and current sharing within such composites. Processing methods and parameters were refined. Select electroplated samples outperformed pure Cu in conductivity and had comparable ultimate tensile strengths. Tensile strengths are expected to improve with an additional densification step during processing. Acoustic emission data was used to predict the failure mechanism of the composite. Theories explaining improved intrinsic conductivity are discussed, with a focus on chemical and mechanical interactions at the Cu-CNT interface. These include Cu infiltration of CNT crevices, CNT oxidation, activity at defects in CNT walls, and the release of carbide-forming metals from CNT walls. Validating any or all these theories will require further work replicating data, collecting electron micrographs and conducting chemical analyses.

Metalized CNT↗

NASA NTRSDate not supplied

Role of NDE and In-Situ Process Monitoring in Managing Risk of AM Space Hardware

The recently published NASA-STD-6030 defines the Additive Manufacturing (AM) Requirements for Spaceflight Systems. Key aspects of the certification approach include the development of a qualified material process (QMP) and material characterization determined by part classification. Nondestructive evaluation (NDE) of the full surface and volume is required for all part classifications except those with negligible risk. NASA is exploring the use of in-process monitoring data to improve risk posture and supplement post-build inspection for complex parts. Currently, the most challenging obstacle to overcome is linking the indications in the monitoring data to the physics of the process and the final material state of the finished part. NASA is undertaking studies to understand and quantify this relationship for various monitoring methods. The desired goal is to develop a protocol to establish this correlation for any monitoring method. Once this correlation is known, the critical defect size can be linked to a representative indication in the monitoring data, and the capability of the monitoring system can be tested using the 90/95 probability of detection requirement for NDE methods. This would enable the use of in-process monitoring as a defect screening activity for AM part certification. Many high-criticality components built with AM have high complexity and therefore limited inspectability, so using in-process monitoring can help address this certification gap. The use of adaptive, closed-loop monitoring systems that alter the locked process will require a new approach to the QMP.

additive manufacturing↗

NASA NTRSDate not supplied

Role of NDE and In-Situ Process Monitoring in Managing Risk of AM Space Hardware

advanced manufacturing↗

NASA NTRSDate not supplied

Investigating the Ability of Plastic Current Collectors to Isolate Internal Shorts

Metallized plastic current collectors in Li-ion cells reduce mass and reduce the internal short circuit hazard compared to aluminum and copper foils. Shorts induced by nail and by our internal short circuit device were performed on control 18650 cells and on cells with the collectors replaced with metallized polyester and aramid films. Tests were performed inside our fractional thermal runaway calorimeter to quantify the heat transferred and its distributions and those runs done at a synchrotron yielded fascinating very high speedX-ray videography. These show tolerance to nail penetration and activation of defect internal shorts and when thermally forced into thermal runaway, the heat output is significantly reduced. Very high resolutionCT scans, cross sections, and cell tear downs give insights into the thermal and mechanism for these plastic collectors.

Plastic Current Collectors↗

NASA NTRS1984

Stress studies in EFG

Electrical characterization of defects induced in FZ and CZ silicon stress in four-point bending above 1200 C was started. Techniques to study electrical activity that will permit correlation of defect activity with diffusion length and with room and low temperature EBIC are being developed. Preliminary characterization of defects in ribbon grown at very low speeds of less than 1 cm/min shows that the dislocation density is very low over significant regions of cross section, while regions of high dislocation density (approx. 5 x 10(6)/cm(2)) occur in bands in a number of places. Addition measurements of stress distributions in EFG material were obtained at the University of Illinois using shadow-Moire interferometry.

Source record↗

DOE OSTI2021

Anomalous interfacial dynamics of single proton charges in binary aqueous solutions

Our understanding of the dynamics of charge transfer between solid surfaces and liquid electrolytes has been hampered by the difficulties in obtaining interface, charge, and solvent-specific information at both high spatial and temporal resolution. Here, we measure at the single charge scale the dynamics of protons at the interface between an hBN crystal and binary mixtures of water and organic amphiphilic solvents (alcohols and acetone), evidencing a marked influence of solvation on interfacial dynamics. Applying single-molecule localization microscopy to emissive crystal defects, we observe correlated activation between adjacent ionizable surface defects, mediated by the transport of single excess protons along the solid/liquid interface. Solvent content has a nontrivial effect on interfacial dynamics, leading at intermediate water fraction to an increased surface diffusivity, as well as an increased affinity of the proton charges to the solid surface. Our measurements evidence the notable role of solvation on interfacial proton charge transport.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Evidence of topological charge polarization at active-passive interfaces in acoustically powered active liquid crystals

Theoretical and computational studies predict topological charge separation at active-passive interfaces in active nematics, but reliable experimental validation has been lacking. We utilize a synthetic acoustically energized liquid crystal to experimentally investigate the dynamics of topological defects across an active-passive interface. The interference pattern induced by the acoustic wave inside the experimental cell creates a spatial distribution of activity, resulting in the formation of active-passive interfaces with the liquid-crystalline director field aligned parallel to those interfaces. The activity gradient drives the reorientation of positively charged topological defects along its direction, causing them to migrate into the passive zone and form a layer with net topological charge. That layer “discharges” upon cessation of activity through annihilation of positive and negative topological charges, resembling the discharge of a capacitor.

Active defects↗

DOE OSTI2024

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗

DOE OSTI2022

Light- and Elevated-Temperature-Induced Degradation-Affected Silicon Cells From a Utility-Scale Photovoltaic System Characterized by Deep-Level Transient Spectroscopy

Photovoltaic modules from a utility-scale field experienced power loss by light- and elevated-temperature-induced degradation (LeTID). Samples from the affected monocrystalline silicon cells are cored and extracted from the module packaging and then laser-scribed to form 2-mm diameter isolated areas. Using deep-level transient spectroscopy, a majority-carrier, hole-trap defect with an activation energy of 0.42 eV is detected on degraded and regenerated samples. The LeTID-degraded sample, however, has a larger signal corresponding to a trap density of 1.1 x 10 13 cm -3 , which is about five times larger than the 2.1 x 10 12 cm -3 trap density of the regenerated sample. An increase in filling pulse time from 50 u s to 20 ms shows a slight decrease in activation energy from 0.42 to 0.36 eV suggesting that the defect level may consist of a band of energy states where shallower states continue to fill with long filling times. The capture rate of the defect is directly measured using an increasing series of filling pulsewidths in 15 to 125 ns range. This leads to a measured capture cross section of 5.1 x 10 -17 cm 2 , and using an approximate defect density of 10 13 cm -3 , the majority-carrier-hole lifetime related to this defect is approximately 100 u s when in the LeTID-degraded state.

charge carrier lifetime↗