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Correlations between Cascaded Photons from Spatially Localized Biexcitons in ZnSe
Not provided.
A second set of ZnSe grisms for the Rapid Infrared Imager/Spectrograph (RIMAS)
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Continuous wave Fe[superscript 2+]:ZnSe mid-IR optical fiber lasers
Abstract not provided
High-power few-cycle Cr:ZnSe mid-infrared source for attosecond soft x-ray physics
The development of mid-infrared, high-energy pulses of extremely short pulse duration is of great importance to the strong-field physics community, as it enables extension of the high-harmonic cutoff towards the keV range of photon energies. Here we demonstrate a C r 2 + : Z n S e laser amplifier delivering 7 mJ, 100 fs pulses at 1 kHz repetition rate and 2.4 µm central wavelength with excellent energy stability and beam quality. These pulses are post-compressed to 39 fs, 6.2 mJ, and 115 GW peak power in a novel nonlinear compression scheme. The laser system was used to generate coherent soft x-ray radiation up to 0.6 keV covering the entire water window, which is of high importance for bio-relevant applications. The obtained results open a wide range of applications in nonlinear optics, attosecond and strong-field physics, and remote sensing.
A cdse-znse thin film rectifier.
Properties of thin film rectifier formed on glass substrate by vacuum-depositing cadmium selenide- zinc selenide film between two deposited gold electrodes
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969
Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germanium
Study of semiconductor heterojunctions of ZnSe, GaAs and Ge
Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/GaP
Time-of-flight mobility and trapping results for ZnSe.
Results of measurements of time-of-flight mobility and trapping for zinc selenide. The data were obtained at room temperature for electric fields in the range from 30,000 to 800,000 V/cm. A relatively constant hole mobility (about 50 sq cm/V sec) was found for the entire range of investigated fields. The electron mobility was approximately constant (about 400 sq cm/V sec) up to approximately equal to 300,000 V/cm, above which the drift velocity remained constant. No obvious negative differential mobility was observed, even though the Gunn effect has been reported for the field range investigated. Trapping and detrapping times in the vicinity of 1 nsec are reported for both holes and electrons. The field dependence of the electron-trapping times is unusual and remains unexplained.
Visible optical isolator using ZnSe
A compact Faraday effect optical isolator was constructed for visible wavelengths and tested at 5145 A. The nonreciprocal element of the isolator was polycrystalline zinc selenide placed in the magnetic field of a permanent magnet. For 5145 A the isolator had a 2.06-dB insertion loss and a 25.5-dB isolation. Indices of refraction and Verdet constants were measured for zinc selenide in the wavelength region from 4700 to 6300 A.
Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Physical Vapor Transport
Preliminary definition of all of the necessary materials, labor, services, and facilities necessary to provide science requirement definition, initiate hardware development activities, and provide an updated flight program proposal consistent with the NRA selection letter. The major tasks identified in this SOW are in the general category of science requirements determination, instrument definition, and updated flight program proposal. The Contractor shall define preliminary management, technical and integration requirements for the program, including improved cost/schedule estimates. The Contractor shall identify new technology requirements, define experiment accommodations and operational requirements and negotiate procurement of any long lead items, if required, with the government.
Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Physical Vapor Transport
Preliminary definition of all of the necessary materials, labor, services, and facilities necessary to provide science requirement definition, initiate hardware development activities, and provide an update flight program proposal consistent with the NRA selection letter. The major tasks identified in this SOW are in the general category of science requirements determination, instrument definition, and updated flight program proposal. The Contractor shall define preliminary management, technical and integration requirements for the program, including improved cost/schedule estimates. The Contractor shall identify new technology requirements, define experiment accommodations and operational requirements and negotiate procurement of any long lead items, if required, with the government.
Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport
Crystal growth by vapor transport has several distinct advantages over melt growth techniques. Among various potential benefits from material processing in reduced gravity the followings two are considered to be related to crystal growth by vapor transport: (1) elimination of the crystal weight and its influence on the defect formation and (2) reduction of natural buoyancy-driven convective flows arising from thermally and/ or solutally induced density gradient in fluids. The previous results on vapor crystal growth of semiconductors showed the improvements in surface morphology, crystalline quality, electrical properties and dopant distribution of the crystals grown in reduced gravity as compared to the crystals grown on Earth. But the mechanisms, which are responsible for the improvements and cause the gravitational effects on the complicated and coupled processes of vapor mass transport and growth kinetics, are not well understood.
Optical Sensing of point and line defects in Fe-doped bulk ZnSe crystals
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Machining a YJ band grism in ZnSe for the Rapid Infrared Imager Spectrograph (RIMAS): improvements in technique
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Resonance Raman Study of Shell Morphology in InP/ZnSe/ZnS Core/Shell/Shell Nanocrystals
Resonance Raman spectra and absolute cross sections of InP/ZnSe/ZnS core/shell/shell nanocrystals have been obtained at excitation wavelengths of 501.7, 457.9, and 410 nm. Eight different structures having nearly the same lowest excitonic absorption wavelength but significantly different stoichiometries are compared. The Raman spectra show phonon features attributable to both the InP core and the ZnSe shell. The largest differences among the structures are seen in the ZnSe phonon region by using excitation at 457.9 nm, on the low-energy edge of the absorption features having significant contributions from the ZnSe shell. Here, structures that are nearly stoichiometric (In:P ratio ≈1.0) show a sharp, strongly polarized peak near the bulk ZnSe phonon frequency (~250 cm –1 ) and a weak lower-frequency shoulder with a higher depolarization ratio. Structures having excess indium show a stronger low-frequency shoulder near 225 cm –1 and lower integrated Raman intensities throughout the ZnSe phonon region. These changes are attributed to the presence of indium atoms in the ZnSe shell. Furthermore, these results support a previous assignment of a slow rise component in the time-resolved photoluminescence spectra of nonstoichiometric structures to transient trapping of holes at indium defects in the shell.
Characterization of zinc selenide single crystals
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in optoelectronic devices. This is especially true when the device requires the formation of homoepitaxial layers. While ZnSe is commercially available, it is at present extremely expensive due to the difficulty of growing single crystal boules with low impurity content and the resultant low yields. Many researchers have found it necessary to heat treat the crystals in liquid Zn in order to remove the impurities, lower the resistivity and activate the photoluminescence at room temperature. The physical vapor transport method (PVT) has been successfully used at MSFC to grow many single crystals of II-VI semiconducting materials including ZnSe. The main goal at NASA has been to try to establish the effect of gravity on the growth parameters. To this effect, crystals have been grown vertically upwards or horizontally. Both (111) and (110) oriented ZnSe crystals have been obtained via unseeded PVT growth. Preliminary characterization of the horizontally grown crystals has revealed that Cu is a major impurity and that the low temperature photoluminescence spectra is dominated by the copper peak. The ratio of the copper peak to the free exciton peak is being used to determine variations in composition throughout the crystal. It was the intent of this project to map the copper composition of various crystals via photoluminescence first, then measure their electrical resistivity and capacitance as a function of frequency before proceeding with a heat treatment designed to remove the copper impurities. However, equipment difficulties with the photoluminescence set up, having to establish a procedure for measuring the electrical properties of the as-grown crystals and time limitations made us re-evaluate the project goals. Vertically grown samples designated as ZnSe-25 were chosen to be measured electrically since they were not expected to show as much variation in their composition through their cross-section as the horizontally grown samples.
Band Anticrossing in Highly Mismatched Compound Semiconductor Alloys
Compound semiconductor alloys in which metallic anions are partially replaced with more electronegative isoelectronic atoms have recently attracted significant attention. Group IIIN(x)V(1-x), alloys with a small amount of the electronegative N substituting more metallic column V elements has been the most extensively studied class of such Highly Mismatched Alloys (HMAs). We have shown that many of the unusual properties of the IIIN(x),V(1-x) alloys can be well explained by the Band Anticrossing (BAC) model that describes the electronic structure in terms of an interaction between highly localized levels of substitutional N and the extended states of the host semiconductor matrix. Most recently the BAC model has been also used to explain similar modifications of the electronic band structure observed in Te-rich ZnS(x)Te(l-x) and ZnSe(Y)Te(1-y) alloys. To date studies of HMAs have been limited to materials with relatively small concentrations of highly electronegative atoms. Here we report investigations of the electronic structure of ZnSe(y)Te(1-y) alloys in the entire composition range, 0 less than or equal to y less than or equal to 1. The samples used in this study are bulk ZnSe(y)Te(1-y) crystals grown by either a modified Bridgman method or by physical vapor transport. Photomodulated reflection (PR) spectroscopy was used to measure the composition dependence of optical transitions from the valence band edge and from the spin-orbit split off band to the conduction band. The pressure dependence of the band gap was measured using optical absorption in a diamond anvil cell. We find that the energy of the spin-orbit split off valence band edge does not depend on composition and is located at about 3 eV below the conduction band edge of ZnSe. On the Te-rich side the pressure and the composition dependence of the optical transitions are well explained by the BAC model which describes the downward shift of the conduction band edge in terms of the interaction between localized Se states and the conduction band. On the other hand we show that the large band gap reduction observed on the Se-rich side of the alloy system is a result of an interaction between the localized Te level and the valence bands. This interaction leads to the formation of a Te-like valence band edge that strongly interacts with the light hole valence band. Calculations based on a modified k p model account for the reduction of the band gap and the large increase of the spin-orbit splitting observed in Se-rich ZnSe(y)Te(l-y) alloys. We will also discuss the importance of these new results for understanding of the electronic structure and band offsets in other highly mismatched alloy systems.