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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

The importance of band tail recombination on current collection and open-circuit voltage in CZTSSe solar cells

Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) solar cells typically exhibit high short-circuit current density (J{sub sc}), but have reduced cell efficiencies relative to other thin film technologies due to a deficit in the open-circuit voltage (V{sub oc}), which prevent these devices from becoming commercially competitive. Recent research has attributed the low V{sub oc} in CZTSSe devices to small scale disorder that creates band tail states within the absorber band gap, but the physical processes responsible for this V{sub oc} reduction have not been elucidated. In this paper, we show that carrier recombination through non-mobile band tail states has a strong voltage dependence and is a significant performance-limiting factor, and including these effects in simulation allows us to simultaneously explain the V{sub oc} deficit, reduced fill factor, and voltage-dependent quantum efficiency with a self-consistent set of material parameters. Comparisons of numerical simulations to measured data show that reasonable values for the band tail parameters (characteristic energy, capture rate) can account for the observed low V{sub oc}, high J{sub sc}, and voltage dependent collection efficiency. These results provide additional evidence that the presence of band tail states accounts for the low efficiencies of CZTSSe solar cells and further demonstrates that recombination through non-mobile band tail states is the dominant efficiency limiting mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Determining interface properties limiting open-circuit voltage in heterojunction solar cells

The development of new thin-film photovoltaic (PV) absorbers is often hindered by the search for an optimal heterojunction contact; an unoptimized contact may be mistaken for poor quality of the underlying absorber, making it difficult to assess the reasons for poor performance. Therefore, quantifying the loss in device efficiency and open-circuit voltage (V OC ) as a result of the interface is a critical step in evaluating a new material. In this work, we fabricate thin-film PV devices using cuprous oxide (Cu 2 O), with several different n-type heterojunction contacts. Their current-voltage characteristics are measured over a range of temperatures and illumination intensties ( JVTi ). We quantify the loss in V OC due to the interface and determine the effective energy gap at the interface. The effective interface gap measured by JVTi matches the gap measured by X-ray photoelectron spectroscopy, albeit with higher energy resolution and an order of magnitude faster. We discuss potential artifacts in JVTi measurements and areas where analytical models are insufficient. Applying JVTi to complete devices, rather than incomplete material stacks, suggests that it can be a quick, accurate method to assess the loss due to unoptimized interface band offsets in thin-film PV devices.

14 SOLAR ENERGY↗
DOE OSTI2018

Electrostatic design and conditioning of a triple point junction shield for a –200 kV DC high voltage photogun [Electrostatic design of a triple point junction shield for a -200 kV DC high voltage photogun using COMSOL]

Nuclear physics experiments performed at the Continuous Electron Beam Accelerator Facility (CEBAF) at the Jefferson Lab require a DC high voltage photogun to generate polarized electron beams from GaAs photocathodes. The photogun uses a tapered ceramic insulator that extends into the vacuum chamber and mechanically holds the cathode electrode. Increasing the operating voltage from nominal –130 kV to –200 kV will provide lower beam emittance, better transmission through injector apertures, and improved photocathode lifetime. This desire to increase the photogun operating voltage led to the design of a triple-point-junction shield electrode which minimizes the electric field at the delicate insulator-metal-vacuum interface and linearizes the potential across the insulator, thus reducing the risk of arcing along the ceramic insulator. Furthermore, this work describes the results obtained using COMSOL® electrostatic-field simulation software and presents the high voltage conditioning results of the upgraded –200 kV CEBAF photogun.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

High Voltage Insulation and Gas Absorption of Polymers in High Pressure Argon and Xenon Gases

High pressure gas time projection chambers (HPGTPCs) are made with a variety of materials, many of which have not been well characterized in high pressure noble gas environments. As HPGTPCs are scaled up in size toward ton-scale detectors, assemblies become larger and more complex, creating a need for detailed understanding of how structural supports and high voltage insulators behave. This includes the identification of materials with predictable mechanical properties and without surface charge accumulation that may lead to field deformation or sparking. This paper explores the mechanical and electrical effects of high pressure gas environments on insulating polymers PTFE, HDPE, PEEK, POM and UHMW in Argon and Xenon, including studying absorption, swelling and high voltage insulation strength.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Wide-Input Voltage Range Two-Stages Auxiliary Power Supply for Medium Voltage Applications

This paper aims to present a two-stages auxiliary power supply (APS) providing 24 V output over a wide input DC voltage range, from 600 V to 2 kV. In this architecture, the medium voltage to low voltage scale is addressed by a simplified DC transformer (DCX) stage while the low voltage tight regulation is proposed to be accomplished in a cascaded second stage. Such architecture provides a simpler approach to the industry for the design of APS in MV applications. The implementation of main building blocks of the APS including the DCX stage, startup circuit and self-powered circuit is described. Experimental results at 1400 V and 100 W are presented.

Magri Kimpara, Marcio↗
DOE OSTI2017

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Incentive-Based Voltage Regulation in Distribution Networks

This paper considers distribution networks fea- turing distributed energy resources, and designs incentive-based mechanisms that allow the network operator and end-customers to pursue given operational and economic objectives, while concurrently ensuring that voltages are within prescribed limits. Two different network-customer coordination mechanisms that require different amounts of information shared between the network operator and end-customers are developed to identify a solution of a well-defined social-welfare maximization prob- lem. Notably, the signals broadcast by the network operator assume the connotation of prices/incentives that induce the end- customers to adjust the generated/consumed powers in order to avoid the violation of the voltage constraints. Stability of the proposed schemes is analytically established and numerically corroborated.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Medium-Voltage Testbed for Comparing Advanced Power Line Sensors vs. Measurement Transformers with Electrical Grid Events

Electrical utilities have relied upon potential transformers (PTs) and current transformers (CTs) for very accurate metering and to provide reliable signals for protective relays. Less expensive alternative sensing technologies offer the possibility of wider deployment, particularly in grids that employ distributed energy resources. In this work, the performance of an advanced medi-um-voltage sensor is compared with a reference PT and CT and experimentally evaluated for different power grid scenarios on an advanced outdoor power line sensor testbed at the US De-partment of Energy’s Oak Ridge National Laboratory. The sensor is based on a capacitive divider for voltage monitoring and a Rogowski coil with integrator for current monitoring. The advanced outdoor power line sensor testbed has a real-time simulator that was used to generate transient scenarios (e.g., electrical faults, capacitor bank operation, service restoration), while the analog signals were recorded by the same high resolution power meter. The behavior of analog signals, harmonic components, total harmonic distortion, and crest factors were assessed for this power line sensor compared with the reference PT/CT, because of the absence for testing standards for advanced outdoor power line sensors.

Piesciorovsky, Emilio↗
NASA NTRS2014

Investigation of the Effects of Facility Background Pressure on the Performance and Voltage-Current Characteristics of the High Voltage Hall Accelerator

The National Aeronautics and Space Administration (NASA) Science Mission Directorate In-Space Propulsion Technology office is sponsoring NASA Glenn Research Center to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. A study was conducted to assess the impact of varying the facility background pressure on the High Voltage Hall Accelerator (HiVHAc) thruster performance and voltage-current characteristics. This present study evaluated the HiVHAc thruster performance in the lowest attainable background pressure condition at NASA GRC Vacuum Facility 5 to best simulate space-like conditions. Additional tests were performed at selected thruster operating conditions to investigate and elucidate the underlying physics that change during thruster operation at elevated facility background pressure. Tests were performed at background pressure conditions that are three and ten times higher than the lowest realized background pressure. Results indicated that the thruster discharge specific impulse and efficiency increased with elevated facility background pressure. The voltage-current profiles indicated a narrower stable operating region with increased background pressure. Experimental observations of the thruster operation indicated that increasing the facility background pressure shifted the ionization and acceleration zones upstream towards the thruster's anode. Future tests of the HiVHAc thruster are planned at background pressure conditions that are expected to be two to three times lower than what was achieved during this test campaign. These tests will not only assess the impact of reduced facility background pressure on thruster performance, voltage-current characteristics, and plume properties; but will also attempt to quantify the magnitude of the ionization and acceleration zones upstream shifting as a function of increased background pressure.

Electric Propulsion↗
NASA NTRS2014

Investigation of the Effects of Facility Background Pressure on the Performance and Voltage-Current Characteristics of the High Voltage Hall Accelerator

The National Aeronautics and Space Administration (NASA) Science Mission Directorate In-Space Propulsion Technology office is sponsoring NASA Glenn Research Center to develop a 4 kW-class Hall thruster propulsion system for implementation in NASA science missions. A study was conducted to assess the impact of varying the facility background pressure on the High Voltage Hall Accelerator (HiVHAc) thruster performance and voltage-current characteristics. This present study evaluated the HiVHAc thruster performance in the lowest attainable background pressure condition at NASA GRC Vacuum Facility 5 to best simulate space-like conditions. Additional tests were performed at selected thruster operating conditions to investigate and elucidate the underlying physics that change during thruster operation at elevated facility background pressure. Tests were performed at background pressure conditions that are three and ten times higher than the lowest realized background pressure. Results indicated that the thruster discharge specific impulse and efficiency increased with elevated facility background pressure. The voltage-current profiles indicated a narrower stable operating region with increased background pressure. Experimental observations of the thruster operation indicated that increasing the facility background pressure shifted the ionization and acceleration zones upstream towards the thrusters anode. Future tests of the HiVHAc thruster are planned at background pressure conditions that are expected to be two to three times lower than what was achieved during this test campaign. These tests will not only assess the impact of reduced facility background pressure on thruster performance, voltage-current characteristics, and plume properties; but will also attempt to quantify the magnitude of the ionization.

Pressure Effects↗
DOE OSTI2017

Non-scaling behavior of electroosmotic flow in voltage-gated nanopores

Ionic size effects and electrostatic correlations result in the non-monotonic dependence of the electrical conductivity on the pore size. For ion transport at a high gating voltage, the conductivity oscillates with the pore size due to a significant overlap of the electric double layers.

catalysis (heterogeneous)↗
DOE OSTI2020

Grid Application and Controls Development for Medium-Voltage SiC-Based Grid Interconnects

This paper studies, the grid-interconnection requirements of directly connected medium-voltage (MV) Silicon Carbide-based (SiC-based) converters and details the necessary control implementations. These power electronic converters follow the interconnection standard IEEE 1547-2018, but can also have additional controls supported by the microgrid standards in IEEE 2030.7, which is demonstrated in this work. Additionally, this paper defines the grid applications realized by these directly connected medium-voltage power electronic converters at the distribution scale and demonstrates results. The controls for the studied grid applications are then developed and implemented on the controller. The paper also includes details of the control algorithm development and validations of the control algorithm through hardware-in-the-loop results.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2018

Capacitor Voltage Ripple Reduction of A 4-Level Hybrid Clamped Converter Using Switching State Redundancy for Medium-Voltage Drive

Abstract—A four-level Hybrid Clamped Converter (4LHCC) is a novel promising DC/AC multilevel converter for high-efficiency medium-voltage drives. This paper presents a new control method of the 4L-HCC using the switching state redundancy to reduce the DC-link capacitor voltage ripples at low frequencies (<=30 Hz). The new switching state selection algorithm and flying capacitor balancing method are introduced and analyzed.Both of a3.6 kV 1MW 4L-HCC simulation model and a SiC-based 4L-HCC prototype is established to verify the proposed method. Simulation and experimental result shows that the maximum DC-link capacitor ripple can be reduced effectively from over 50% to less than 5% at low frequencies with the new method. Meanwhile, load voltage and currentdistortion caused by the excessive capacitor rippleisalso mitigatedsignificantly.

hybrid clamped converter, motor drive, voltage bal↗