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Impurity crystal-field spectra in II-VI and III- V compound semiconductors used to predict unexplored systems spectra impurity crystal-field spectra in II-VI and III-V compound semiconductors used to predict unexplored systems spectra
The single axis acoustic levitator that was flown on SPAR VI malfunctioned. The results of a series of tests, analyses, and investigation of hypotheses that were undertaken to determine the probable cause of failure are presented, together with recommendations for future flights of the apparatus. The most probable causes of the SPAR VI failure were lower than expected sound intensity due to mechanical degradation of the sound source, and an unexpected external force that caused the experiment sample to move radially and eventually be lost from the acoustic energy well.
A practical approach to calculating diagnostic parameters includes both scattering and statelike (autoionization) elements. The paper presents inelastic quasi-projection-operator calculations of autoionization states of the three-electron ions of oxygen and silicon for states below the n = 3 manifod of the respective two-electron parent (O VI and Si XII). Wave functions containing up to 40 configurations are calculated. The O VI calculated results agree with experimental results within the experimental error (about + or - 2 eV) while for the Si XII case, it was necessary to include relativistic effects. Where formulas are available (states for which p + q = 2), the Si XII results are also in good agreement with experimental results for 2Se, 2Po, and 2De states. Since the calculated results for some of the higher states did not agree with identifications proposed by Trabert et al. (1979), alternative identifications are suggested.
In 1992, an Engineering Test Satellite VI is scheduled to be launched by an H-II rocket. The missions of ETS-VI are to establish basic technologies of inter-satellite communications using millimeter waves and optical beams and fix satellite communications using multibeam antenna on board the satellite. Several kinds of frequency bands will be used for the communications missions. However, these frequencies can be used for propagation experiments.
Communications Research Laboratory (CRL, Ministry of Posts and Telecommunications, Japan) has been engaged in development of three advanced satellite communication payloads aiming at experiments by Japan's 2-ton class Engineering Test Satellite VI (ETS-VI) which is to be launched in H-II rocket by NASDA in August 1992. CRL's three experimental systems are: (1) S-band inter-satellite communications; (2) millimeter-wave inter-satellite and personal-satellite communications; and (3) optical inter-satellite communications. CRL develops experimental optical communication system with telescope of 75 mm diameter which has gimbal mirror beam pointing/tracking mechanism. The onboard system has fundamental optical communication functions with laser diode transmitter of wavelength 0.83 micron, laser beam point-ahead mechanism, receiver of wavelength 0.51 micron, modulation/demodulation subsystem, and so on.
National Space Development Agency of Japan (NASDA) is to perform experimental operations to acquire necessary technology for the future inter-satellite communications configured with a data relay satellite. This paper intends to overview functions of the experimental ground system which NASDA has developed for the Engineering Test Satellite VI (ETS-VI) Data Relay and Tracking Experiment, and to introduce Space Network System Operations Procedure (SNSOP) method with an example of Ka-band Single Access (KSA) acquisition sequence. To reduce operational load, SNSOP is developed with the concept of automated control and monitor of both ground terminal and data relay satellite. To perform acquisition and tracking operations fluently, the information exchange with user spacecraft controllers is automated by SNSOP functions.
The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.
The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.
The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.
This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.
The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. Thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range of 500 C to 900 C. The measured diffusivity as a function of temperature agrees fairly well with published data. However, a relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the melt, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed a similar relaxation behavior to the measured diffusivity. The density and volume expansion coefficients for pure Te and HgTe melts were measured as a function of temperature using a pycnometric method. A density maximum was found for both melts but no relaxation behavior was observed. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previously reported. A simple kinetic theory, which contains the formation reactions of Te polymerization that increases the molecular weight, was proposed to interpret the relaxation behavior of HgZnTe viscosity data.
The objectives of the project are to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs as well as to study the fundamental heterophase fluctuation phenomena in these melts by: 1) conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts (such as viscosity, electrical conductivity, thermal diffusivity and density) as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. It has long been recognized that liquid Te presents a unique case having properties between those of metals and semiconductors. The electrical conductivity for Te melt increases rapidly at melting point, indicating a semiconductor-metal transition. Te melts comprise two features, which are usually considered to be incompatible with each other: covalently bound atoms and metallic-like behavior. Why do Te liquids show metallic behavior? is one of the long-standing issues in liquid metal physics. Since thermophysical properties are very sensitive to the structural variations of a melt, we have conducted extensive thermophysical measurements on Te melt.
The objectives of the project is to conduct ground-based experimental and theoretical research on the structural fluctuations and thermophysical properties of molten II-VI compounds to enhance the basic understanding of the existing flight experiments in microgravity materials science programs and to study the fundamental heterophase fluctuations phenomena in these melts by: 1) Conducting neutron scattering analysis and measuring quantitatively the relevant thermophysical properties of the II-VI melts such as viscosity, electrical conductivity, thermal diffusivity and density as well as the relaxation characteristics of these properties to advance the understanding of the structural properties and the relaxation phenomena in these melts and 2) Performing theoretical analyses on the melt systems to interpret the experimental results. All the facilities required for the experimental measurements have been procured, installed and tested. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. An apparatus based on the transient torque induced by a rotating magnetic field has been developed to determine the viscosity and electrical conductivity of semiconducting liquids. Viscosity measurements on molten tellurium showed similar relaxation behavior as the measured diffusivity. Neutron scattering experiments were performed on the HgTe and HgZnTe melts and the results on pair distribution showed better resolution than previous reported.
The relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.
Emission from 0 VI (lambda lambda 1032, 1038) in the diffuse interstellar medium was observed in two, long Fur Ultra-violet Spectroscopic Explorer (FUSE) observations at l = approximately equals 1l3 degrees .0 and b approximately equals 70 degrees .7 (near the quasar HS 1307+4617). The observed intensities are 2580 +/- 380 (random) +/- 360 (systematic) and 1100 +/- 160 (random) +/- 160 (systematic) photons cm(exp -2)/s s/r in the 1032 and 1038 A emission lines, respectively. The electron density, thermal pressure, and depth of the emitting gas are calculated from the observed intensities. The velocity of the emitting material is about +10 km/s relative to the local standard of rest and less than + 30 km/s relative to the H I along the line of sight. The similarity suggests that the highly ionized gas is quiescent and not recently shock heated. Emission from the C 11 3 s(exp 2) S(sub 1/2) to 2p(exp 2) P(sub 3/2) transition at 1037 A is also observed, and upper limits are placed on the intensities of ultraviolet line emission from C I, C 111, N I, N 11, Mg 11, Si 11, S 11, S 111. S IV, S VI. Fe 11, and Fe 111.
Thermophysical properties are essential for the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the II-VI semiconductor melts are scarce. This paper reports the results of the temperature dependence of melt density, viscosity and electrical conductivity of selected II-VI compounds, including HgTe, HgCdTe and HgZnTe. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. The results were compared with and showed good agreement with the existing data in the literature.
Free-space laser communications experiments were conducted between the laser communication equipment (LCE) on board the Japanese Engineering Test Satellite VI (ETS-VI) and the ground station located at the Table Mountain Facility (TMF) during late 1995 and early 1996. This article describes the on-line data reduction process used to decode LCE telemetry (called E2) downlinked on the optical carrier during the Ground/Orbiter Lasercomm Demonstration (GOLD) experiments. The LCE has the capability of transmitting real-time sensor and status information at 128 kbps by modulating the onboard diode laser. The optical downlink was detected on the ground, bit synchronized, and the resulting data stream stored on a data recorder. The recorded data were subsequently decoded by on-line data processing that included cross-correlation of the known telemetry data format and the downlink data stream. Signals obtained from the processing can be useful not only in evaluating the characteristics of the LCE but also in understanding uplink and downlink signal quality.
We observed five quasars located behind clusters of galaxies with the goal of detecting resonant O VI absorption from warm (T approx. 10(exp 6) K) gas in the clusters' intracluster medium. The presence of such warm gas is predicted by cosmological hydrodynamic simulations and is observationally supported by the detection of "soft excess" emission in several galaxy clusters. A second goal was the detection of diffuse O VI emission from warm gas in our own Galaxy.