Monte-Carlo Simulations of Superconducting Tunnel Junction Quantum Sensors for the BeEST Experiment
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Nuclear science and engineering, Engineering - Ins↗
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Results for “Tunnel junctions”
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Domain Wall Magnetic Tunnel Junction Spin Orbit Torque Devices for In Memory Computing.
Abstract not provided.
Leonard, Thomas↗
Domain wall-magnetic tunnel junction synapses for Bayesian neural networks.
Abstract not provided.
Liu, Samuel↗
Voltage-Controlled Magnetic Tunnel Junctions Demonstrate Resilience to Displacement Damage
RADECS 2024 submission
Bennett, Christopher↗
Optimization of Magnetic Tunneling Junction Devices for Neuromorphic Circuits for Solving MAXCUT
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Mulet, Ian [ University of Tennessee, Knoxville]↗
Fully Transparent GaN Homojunction Tunnel Junction-Enabled Cascaded Blue LEDs.
A sidewall activation process was optimized for buried magnesium-doped p-GaN layers yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward voltage. This buried activation enabled the realization of cascaded blue LEDs with fully transparent GaN homojunction tunnel junctions. The initial optimization of buried p-GaN activation was performed on PN junctions grown by metal organic chemical vapor deposition (MOCVD) buried under hybrid tunnel junctions grown by MOCVD and molecular beam epitaxy. Next the activation process was implemented in cascaded blue LEDs emitting at 450 nm, which were enabled by fully transparent GaN homojunction tunnel junctions. The tunnel junction-enabled multi-active region blue LEDs were grown monolithically by MOCVD. This work demonstrates a state-of-the-art tunnel junction-enabled cascaded LED utilizing homojunction tunnel junctions which do not contain any heterojunction interface.
42 ENGINEERING↗
Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices
Nearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.
36 MATERIALS SCIENCE↗
Metamorphic two-junction photovoltaic devices with removable graded buffers
The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.
Schulte, Kevin Louis↗
Noncontact Andreev Reflection as a Direct Probe of Superconductivity on the Atomic Scale
Direct detection of superconductivity has long been a key strength of point-contact Andreev reflection. However, its applicability to atomic-scale imaging is limited by the mechanical contact of the Andreev probe. To this end, we present a new method to probe Andreev reflection in a tunnel junction, leveraging tunneling spectroscopy and junction tunability to achieve quantitative detection of Andreev scattering. This method enables unambiguous assignment of superconducting origins of current-carrying excitations, as well as detection of higher order Andreev processes in atomic-scale junctions. Herein, we furthermore revealed distinct sensitivity of Andreev reflection to natural defects, such as step edges, even in classical superconductors. The methodology opens a new path to nano- and atomic-scale imaging of superconducting properties, including disordered superconductors and proximity to phase transitions.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Spatial influence of paramagnetic molecules on magnetic tunnel junction-based molecular spintronic devices (MTJMSD)
Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated systems. Understanding MTJMSD's magnetic behavior is essential to designing and fabricating practical devices. This paper investigates the effect of two contributing factors on MTJMSD's magnetic properties via Monte Carlo Simulation. Here, we have systematically studied coupling strengths and nature between magnetic molecules and ferromagnetic electrodes at various temperatures. We have also investigated the effect of length and thickness increase on MTJMSD temporal and spatial evolution of magnetic moment, magnetic correlation, and magnetic susceptibility. Our results showed that thermal energy increase significantly affects molecular devices.
74 ATOMIC AND MOLECULAR PHYSICS↗
Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating
The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.
2D magnet↗
Next Generation Ta-STJ Sensor Arrays for BSM Physics Searches
The Beryllium Electron capture in Superconducting Tunnel junctions (BeEST) experiment uses superconducting tunnel junction (STJ) sensors to search for physics beyond the standard model (BSM) with recoil spectroscopy of the 7 Be EC decay into 7 Li. A pulsed UV laser is used to calibrate the STJs throughout the experiment with ∼20 meV precision. Phase-III of the BeEST experiment revealed a systematic calibration discrepancy between STJs. We found these artifacts to be caused by resistive crosstalk and by intensity variations of the calibration laser. For phase-IV of the BeEST experiment, we have removed the crosstalk by designing the STJ array so that each pixel has its own ground wire. We now also use a more stable UV laser for calibration. The new STJ arrays were fabricated at STAR Cryoelectronics and tested at LLNL and FRIB. They have the same high energy resolution of ∼1-2~eV in the energy range of interest below 100~eV as before, and they no longer exhibit the earlier calibration artifacts. We discuss the design changes and the STJ array performance for the next phase of the BeEST experiment.
Laser Calibration↗
Probabilistic Neural Computing with Stochastic Devices
Abstract The brain has effectively proven a powerful inspiration for the development of computing architectures in which processing is tightly integrated with memory, communication is event‐driven, and analog computation can be performed at scale. These neuromorphic systems increasingly show an ability to improve the efficiency and speed of scientific computing and artificial intelligence applications. Herein, it is proposed that the brain's ubiquitous stochasticity represents an additional source of inspiration for expanding the reach of neuromorphic computing to probabilistic applications. To date, many efforts exploring probabilistic computing have focused primarily on one scale of the microelectronics stack, such as implementing probabilistic algorithms on deterministic hardware or developing probabilistic devices and circuits with the expectation that they will be leveraged by eventual probabilistic architectures. A co‐design vision is described by which large numbers of devices, such as magnetic tunnel junctions and tunnel diodes, can be operated in a stochastic regime and incorporated into a scalable neuromorphic architecture that can impact a number of probabilistic computing applications, such as Monte Carlo simulations and Bayesian neural networks. Finally, a framework is presented to categorize increasingly advanced hardware‐based probabilistic computing technologies.
Misra, Shashank↗
Switching current reduction in magnetoresistive random access memories
We present an approach for minimizing the critical current for the magnetization switching in magnetic tunnel junctions by optimizing the spatial distribution of the current density. We show that such a minimization is possible because critical current is determined by the condition of making one of the magnetization eigenstates grow in time. The excitation of the eigenstates is enhanced when the spatial distributions of the eigenstates and current density overlap. Critical current can be viewed as a functional of the current density spatial distribution and it can be minimized by optimizing this distribution. Such an optimization results in a major reduction of the critical current and increase of the switching efficiency, viz. the ratio between the energy barrier and critical current. The minimized critical current increases approximately linearly with the magnetic tunnel junction size, which is much slower than critical current for the case of a uniform current density. The optimized efficiency can be approximately a constant with respect to the magnetic tunnel junction size, which is much higher than the efficiency for the uniform current density. Additional optimization can be achieved by spatially modulating the material parameters, e.g., the saturation magnetization. The presented approach and obtained scaling of the critical current and efficiency offers opportunities for the magnetic tunnel junction optimization.
36 MATERIALS SCIENCE↗
Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs)
Molecular spintronics devices (MSDs) attempt to harness molecules’ quantum state, size, and configurable attributes for application in computer devices—a quest that began more than 70 years ago. In the vast number of theoretical studies and limited experimental attempts, MSDs have been found to be suitable for application in memory devices and futuristic quantum computers. MSDs have recently also exhibited intriguing spin photovoltaic-like phenomena, signaling their potential application in cost-effective and novel solar cell technologies. The molecular spintronics field’s major challenge is the lack of mass-fabrication methods producing robust magnetic molecule connections with magnetic electrodes of different anisotropies. Another main challenge is the limitations of conventional theoretical methods for understanding experimental results and designing new devices. Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting paramagnetic molecules across an insulating tunneling barrier. The insulating tunneling barrier serves as a mechanical spacer between two ferromagnetic (FM) electrodes of tailorable magnetic anisotropies to allow molecules to undergo many intriguing phenomena. Our experimental studies showed that the paramagnetic molecules could produce strong antiferromagnetic coupling between two FM electrodes, leading to a dramatic large-scale impact on the magnetic electrode itself. Recently, we showed that the Monte Carlo Simulation (MCS) was effective in providing plausible insights into the observation of unusual magnetic domains based on the role of single easy-axis magnetic anisotropy. Here, we experimentally show that the response of a paramagnetic molecule is dramatically different when connected to FM electrodes of different easy-axis anisotropies. Motivated by our experimental studies, here, we report on an MCS study investigating the impact of the simultaneous presence of two easy-axis anisotropies on MTJMSD equilibrium properties. In-plane easy-axis anisotropy produced multiple magnetic phases of opposite spins. The multiple magnetic phases vanished at higher thermal energy, but the MTJMSD still maintained a higher magnetic moment because of anisotropy. The out-of-plane easy-axis anisotropy caused a dominant magnetic phase in the FM electrode rather than multiple magnetic phases. The simultaneous application of equal-magnitude in-plane and out-of-plane easy-axis anisotropies on the same electrode negated the anisotropy effect. Our experimental and MCS study provides insights for designing and understanding new spintronics-based devices.
42 ENGINEERING↗
III-Nitride p-down green (520 nm) light emitting diodes with near-ideal voltage drop
We demonstrate p-down green emitting LEDs with low turn-on voltage enabled by efficient tunnel junctions. Due to the polarization field alignment in the (In,Ga)N/GaN interface with the p-down orientation, the electrostatic depletion barrier for electron and hole injection is reduced when compared with the conventional p-up LEDs. A single (In,Ga)N/GaN heterostructure quantum well active region with a GaN homojunction tunnel junction exhibited very low forward operating voltage of 2.42 V at 20 A/cm 2 with a peak electroluminescence emission wavelength of 520 nm for current densities above 100 A/cm 2 . Furthermore, the bottom tunnel junction with minimal voltage drop enabled excellent hole injection into the bottom p-GaN layer.
36 MATERIALS SCIENCE↗
Impact of ferromagnetic electrode length and thickness on Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSD)
A knowledge gap exists about the impact of variation in length and thickness of ferromagnetic(FM) electrodes on molecular spintronics devices’ ability to manifest molecular coupling impact. Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated materials and devices and investigating the fundamental science of organic spintronics. This paper reports our experi- mental observations providing the dramatic impact of variation in ferromagnetic electrode length and thickness on paramagnetic molecule-based MTJMSD. Room temperature transport studies were performed to investigate the effect of FM electrode thickness. On the other hand, magnetic force microscopy measurements were con- ducted to understand the effect of FM electrode length extending beyond the molecular junction area, i.e., the site where paramagnetic molecules bridged between two FM. In the strong molecular coupling regime, transport study suggested thickness variation caused ~1000 to million-fold differences in junction conductivity. MFM study revealed near-zero magnetic contrast for pillar-shaped MTJMSD without any extended FM electrode. However, MFM images showed a multitude of microscopic magnetic phases on cross junction shaped MTJMSD where FM electrodes extended beyond the junction area. To understand the intriguing experimental results, we conducted an in-depth theoretical study using Monte Carlo Simulation (MCS) approach. MCS study utilized a Heisenberg atomic model of cross junction shaped MTJMSD to gain insights about room temperature transport and MFM experimental observations of microscopic MTJMSD. To make this study applicable for a wide variety of MTJMSDs, we systematically studied the effect of variation in molecular coupling strength between magnetic molecules and ferromagnetic (FM) electrodes of various dimensions. Here, our theoretical results suggest 25 atoms thick FM electrode show very weak molecular coupling impact and of the same order of experimentally studied FM electrode dimensions showing weak effect. Also, MCS results agree with experimentally observed multiple magnetic phases on lengthy FM electrodes of an MTJMSD.
42 ENGINEERING↗