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At least 109 records · Page 6

Combined quantum mechanical and molecular mechanical method for metal–organic frameworks: proton topologies of NU-1000

Metal–organic frameworks (MOFs) are materials with applications in catalysis, gas separations, and storage. Quantum mechanical (QM) calculations can provide valuable guidance to understand and predict their properties. In order to make the calculations faster, rather than modeling these materials as periodic (infinite) systems, it is useful to construct finite models (called cluster models) and use subsystem methods such as fragment methods or combined quantum mechanical and molecular mechanical (QM/MM) methods. Here we employ a QM/MM methodology to study one particular MOF that has been of widespread interest because of its wide pores and good solvent and thermal stability, namely NU-1000, which contains hexanuclear zirconium nodes and 1,3,6,8-tetrakis(p-benzoic acid)pyrene (TBAPy 4- ) linkers. A modified version of the Bristow–Tiana–Walsh transferable force field has been developed to allow QM/MM calculations on NU-1000; we call the new parametrization the NU1T force field. We consider isomeric structures corresponding to various proton topologies of the [Zr 6 (μ 3 -O) 8 O 8 H 16 ] 8+ node of NU-1000, and we compute their relative energies using a QM/MM scheme designed for the present kind of problem. We compared the results to full quantum mechanical (QM) energy calculations and found that the QM/MM models can reproduce the full QM relative energetics (which span a range of 334 kJ mol -1 ) with a mean unsigned deviation (MUD) of only 2 kJ mol-1. Furthermore, we found that the structures optimized by QM/MM are nearly identical to their full QM optimized counterparts.

Wu, Xin-Ping↗

Topological nonmagnetic impurity states in topological Kondo insulators

We examine here the presence of nonmagnetic impurities in a hybridization gap model of a Kondo insulator which has band inversion. The model has been used to predict that SmB 6 is a topological insulator. We show that there are two types of nonmagnetic impurity states in a Kondo insulator. The type of states can be categorized as deep impurity states, similar to the impurity states in an ordinary metal, and impurity states which have energies within the hybridization gap. Unlike the deep impurity states which only form if the impurity potential exceeds a critical value of the order of the conduction bandwidth, the in-gap impurity states form for exceptionally small values of the impurity potential comparable to the hybridization gap. This finding may explain why Kondo insulators are found to be exceptionally sensitive to impurities. We demonstrate that these in-gap states are caused by band inversion and have properties similar to those expected for impurities in a topological insulator.

36 MATERIALS SCIENCE↗

Observation of a Majorana zero mode in a topologically protected edge channel

Superconducting proximity pairing in helical edge modes, such as those of topological insulators, is predicted to provide a unique platform for realizing Majorana zero modes (MZMs). We used scanning tunneling microscopy measurements to probe the influence of proximity-induced superconductivity and magnetism on the helical hinge states of bismuth(111) films grown on a superconducting niobium substrate and decorated with magnetic iron clusters. Consistent with model calculations, our measurements revealed the emergence of a localized MZM at the interface between the superconducting helical edge channel and the iron clusters, with a strong magnetization component along the edge. Our experiments also resolve the MZM’s spin signature, which distinguishes it from trivial in-gap states that may accidentally occur at zero energy in a superconductor.

Science & Technology - Other Topics↗

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi{sub 2}Se{sub 3} and Sb{sub 2}Te{sub 3} Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi{sub 2}Se{sub 3} and Sb{sub 2}Te{sub 3} compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Investigation of topologically trivial and non-trivial spin textures and their relationships with the topological Hall effect

This proposal has two main goals: (1) to investigate ways to create a variety of spin textures, both topologically trivial and non-trivial, and (2) to establish the relationships between the created spin textures and the topological Hall effect (THE) signal. The approach is achieved by utilizing the van der Waals (vdW) two-dimensional (2D) magnetic materials, such as CrX 3 (X=I, Br, and Cl) and Fe 3 GeTe 2 , transferred onto various substrates with different interactions to create a wide range of spin textures; and utilize Spin helical system, such as Eu metal, and the impact of the thickness.

36 MATERIALS SCIENCE↗

The topology of large-scale structure. V - Two-dimensional topology of sky maps

A 2D algorithm is applied to observed sky maps and numerical simulations. It is found that when topology is studied on smoothing scales larger than the correlation length, the topology is approximately in agreement with the random phase formula for the 2D genus-threshold density relation, G2(nu) varies as nu(e) exp-nu-squared/2. Some samples show small 'meatball shifts' similar to those seen in corresponding 3D observational samples and similar to those produced by biasing in cold dark matter simulations. The observational results are thus consistent with the standard model in which the structure in the universe today has grown from small fluctuations caused by random quantum noise in the early universe.

Gott, J. R., III↗

Dirac plasmons and beyond: the past, present, and future of plasmonics in 3D topological insulators

Here, we review progress studying unique plasmonics in topological insulators (TIs). First, we describe exfoliation and deposition synthesis approaches. TI materials have substantially improved: it is now possible to grow samples with few trivial electrons and controllable doping. We then describe the theory behind the unique behavior of the coupled, 2D Dirac plasmons. While reviewing experimental efforts, we note that Dirac plasmons have been conclusively demonstrated in TIs and they show remarkable properties including long lifetimes, large mode indices, and huge modulation depths. Finally, we describe the opportunities that are present now that high-quality materials can be obtained, including spin and nanoparticle plasmons.

36 MATERIALS SCIENCE↗

Toward Design Rules of Metal–Organic Frameworks for Adsorption Cooling: Effect of Topology on the Ethanol Working Capacity

Using combined experimental and computational approaches, we studied the adsorption behavior of ethanol in a series of metal-organic frameworks (MOFs) with similar building blocks but different topologies and tested their performance as adsorption coolers. Here, we analyzed the relationship between the MOF structures and their ethanol working capacities under different working conditions. Molecular-level insights into the microscopic adsorption behavior were also gained from atomistic simulations. Based on the structure-property relationships that we found, we selected another MOF (MOF-525) for study, and our experiments and simulations both showed superior ethanol working capacity for this MOF, which verified our design rules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Zero-field edge plasmons in a magnetic topological insulator [Zero-field edge magnetoplasmons in a magnetic topological insulator]

Incorporating ferromagnetic dopants into three-dimensional topological insulator thin films has recently led to the realisation of the quantum anomalous Hall effect. These materials are of great interest since they may support electrical currents that flow without resistance, even at zero magnetic field. To date, the quantum anomalous Hall effect has been investigated using low-frequency transport measurements. However, transport results can be difficult to interpret due to the presence of parallel conductive paths, or because additional non-chiral edge channels may exist. Here we move beyond transport measurements by probing the microwave response of a magnetised disk of Cr-(Bi,Sb) 2 Te 3 . We identify features associated with chiral edge plasmons, a signature that robust edge channels are intrinsic to this material system. Finally, our results provide a measure of the velocity of edge excitations without contacting the sample, and pave the way for an on-chip circuit element of practical importance: the zero-field microwave circulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) B i2 Se 3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of B i2 Se 3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm 2 /Vs at 5 K.

74 ATOMIC AND MOLECULAR PHYSICS↗