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At least 109 records · Page 6

Photonic Switching Devices Using Light Bullets

A unique ultra-fast, all-optical switching device or switch is made with readily available, relatively inexpensive, highly nonlinear optical materials. which includes highly nonlinear optical glasses, semiconductor crystals and/or multiple quantum well semiconductor materials. At the specified wavelengths. these optical materials have a sufficiently negative group velocity dispersion and high nonlinear index of refraction to support stable light bullets. The light bullets counter-propagate through, and interact within the waveguide to selectively change each others' directions of propagation into predetermined channels. In one embodiment, the switch utilizes a rectangularly planar slab waveguide. and further includes two central channels and a plurality of lateral channels for guiding the light bullets into and out of the waveguide. An advantage of the present all-optical switching device lies in its practical use of light bullets, thus preventing the degeneration of the pulses due to dispersion and diffraction at the front and back of the pulses. Another advantage of the switching device is the relative insensitivity of the collision process to the time difference in which the counter-propagating pulses enter the waveguide. since. contrary to conventional co-propagating spatial solitons, the relative phase of the colliding pulses does not affect the interaction of these pulses. Yet another feature of the present all-optical switching device is the selection of the light pulse parameters which enables the generation of light bullets in nonlinear optical materials. including highly nonlinear optical glasses and semiconductor materials such as semiconductor crystals and/or multiple quantum well semiconductor materials.

Goorjian, Peter M.↗

Task switching in a hierarchical task structure: evidence for the fragility of the task repetition benefit

This study examined how task switching is affected by hierarchical task organization. Traditional task-switching studies, which use a constant temporal and spatial distance between each task element (defined as a stimulus requiring a response), promote a flat task structure. Using this approach, Experiment 1 revealed a large switch cost of 238 ms. In Experiments 2-5, adjacent task elements were grouped temporally and/or spatially (forming an ensemble) to create a hierarchical task organization. Results indicate that the effect of switching at the ensemble level dominated the effect of switching at the element level. Experiments 6 and 7, using an ensemble of 3 task elements, revealed that the element-level switch cost was virtually absent between ensembles but was large within an ensemble. The authors conclude that the element-level task repetition benefit is fragile and can be eliminated in a hierarchical task organization.

Reaction Time↗

A least-squares parameter estimation algorithm for switched hammerstein systems with applications to the VOR

A "Multimode" or "switched" system is one that switches between various modes of operation. When a switch occurs from one mode to another, a discontinuity may result followed by a smooth evolution under the new regime. Characterizing the switching behavior of these systems is not well understood and, therefore, identification of multimode systems typically requires a preprocessing step to classify the observed data according to a mode of operation. A further consequence of the switched nature of these systems is that data available for parameter estimation of any subsystem may be inadequate. As such, identification and parameter estimation of multimode systems remains an unresolved problem. In this paper, we 1) show that the NARMAX model structure can be used to describe the impulsive-smooth behavior of switched systems, 2) propose a modified extended least squares (MELS) algorithm to estimate the coefficients of such models, and 3) demonstrate its applicability to simulated and real data from the Vestibulo-Ocular Reflex (VOR). The approach will also allow the identification of other nonlinear bio-systems, suspected of containing "hard" nonlinearities.

Evaluation Studies↗

B-ISBN Onboard Processing Fast Packet Switch Developed

Future satellite communications applications will require a packet-switched onboard satellite processing system to route packets at very high speeds from uplink beams to different downlink beams. The rapid emergence of point-to-multipoint services, and the important role of satellites in a national and global information infrastructure, makes the multicast function essential to a fast packet switch (FPS). NASA Lewis Research Center's Digital System Technology Branch has been studying possible architectures for high-speed onboard-processing satellite systems. As part of this research, COMSAT Laboratories developed a broadband integrated services digital network (B-ISDN) fast packet switch for Lewis that was delivered on December 1994. The fast packet switch consists of eight inputs and eight outputs that can receive and transmit data, respectively, at a rate of 155 Mbps. The switch features multiple priorities (three) and multiple-size (three) satellite virtual cells that are similar to ATM cells in length (52 bytes). In addition, the fast packet switch features a congestion-control algorithm that allows users to set different thresholds for individual destination ports, thus throttling back the traffic from the transmitting port.

Source record↗

Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

Scardelletti, Maximilian C.↗

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Stuart, Thomas A.↗

MEMS switches having non-metallic crossbeams

A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.

Scardelletti, Maximillian C↗

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Gummin, Mark A.↗

Asymmetric Flow State Switching in the Space Launch System Block 2 Liftoff Environment

An in-depth investigation was conducted at the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel to evaluate flow state switching in the liftoff flow environment of the Space Launch System Block 2 Crew launch vehicle using force measurements, two-component particle image velocimetry, and tuft flow visualization. Multimodal flow states were observed in the gap flow between the centerbody and solid rocket boosters at a range of incoming flow angles and were characterized for the relative strength of state switches. When flow switches occur, the flow is predominantly bimodal, but trimodal flow states are observed with the launch tower downstream of the vehicle. Tuft visualization indicates three-dimensionality during flow state switching, which initiates at one part of the gap and quickly transitions throughout the length of the booster. Due to the long time scales between switches, statistics such as frequency of flow state switches and converged state probabilities cannot be established without significantly increased acquisition times.

Lee J. Mears↗

Asymmetric Flow State Switching on the Space Launch System (SLS) Block 2 Crew Vehicle

An in-depth investigation was conducted at the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel to evaluate flow state switching in the liftoff flow environment of the Space Launch System Block 2 Crew launch vehicle using side force measurements, two-component particle image velocimetry, and tufts flow visualization. Multimodal flow states were observed in the gap flow between the centerbody and solid rocket boosters at a range of incoming flow angles and were characterized for the relative strength of state switches. When flow switches occur, the flow is predominantly bimodal, but trimodal flow states are observed with the launch tower downstream of the vehicle. Tufts visualization indicates three-dimensionality during flow state switching, which initiates at one part of the gap and quickly transitions throughout the length of the booster. Due to the long time scales between switches, statistics such as frequency of flow state switches and converged state probabilities cannot be established without significantly increased acquisition times.

Lee J. Mears↗

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

plasma-enhanced chemical vapor deposition (PECVD).↗

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗

Exciter switch

A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

Mcpeak, W. L.↗

The dc-to-dc converters employing staggered-phase power switches with two-loop control

A switched inductor voltage is coupled to a sense winding in each phase, and all sense windings are connected in series to one of two feedback loops to provide a signal that indicates when one of the power switches is on as the principal determinant of switching instants. A sequencer is triggered each time a pulse generator is triggered to turn on a different power switch in sequence at each switching instant.

Wester, G. W.↗

High-power RF switch

Switch designed for vacuum environments can handle 5 kilowatts of microwave power. Arcing between conductors is prevented by filling gaps with Teflon rather than with inert gas as in conventional switches. Thus, switch is not susceptible to gas leakage, problem faced by conventional switches in high-vacuum applications. Compact three-port switch, developed for microwave radar transmitters aboard spacecraft, is operated by depressing spring-mounted insulating pins that can be remotely actuated by relay. When pin is depressed, it routes microwave signals to selected output port.

Caro, E. R.↗

A microprocessor based high speed packet switch for satellite communications, executive summary

The feasibility of using microprocessors to control satellite-borne packet switching was investigated by designing a packet switch architecture suitable for microprocessor control, using 2900 series components to design the processor(s), and evaluating the packet switch in terms of system throughput, delay, and queue sizes without the packet switch. System architecture for one, three, and multiple processors was designed and evaluated. The production cost of the single processor packet switch is estimated at $500,000, excluding cost of development. The three processor version which can support a maximum throughput of 500,000 packets/sec is estimated to have a production cost of under $100,000. For the multiple processor system, cost is believed to be proportional to throughput, with $1,000,000 for 500,000 packets/sec being the proportionality factor.

Arozullah, M.↗

A microprocessor based high speed space-borne packet switch

The design and performance evaluation of a single microprocessor based packet switch for use on-board a satellite are presented. The primary design criterion is to maximize the system throughput. A number of protocols and their impact on the switch design are discussed. Stem and processor hardware architectures are described. The flow charts of the software required to accomplish the essential functions are presented and modification needed for use in a multisatellite network are also indicated. Maximum throughput attainable is calculated, desirable characteristics of microprocessors for this application are pointed out. A queue theoretic model of the packet switch has been developed. Analytical relationships of the average waiting times and the queue sizes at the queues and the overall average response time with the various design parameters of the switch have been obtained. A number of graphs showing the effect of variation in the number of input and output lines, data rates, destination functions, speed of output lines and some other design parameters on the performance of the switch are presented and discussed.

Arozullah, M.↗

Evaluation of a three-processor architecture for a satellite packet switch

The architecture of a microprocessor-based packet switch using three processors for use on-board satellites is presented. The operation of the switch involves three distinct functions, namely, the input, the routing and the output functions. Each of these functions is performed by one of the three microprocessors. The operation of the switch along with those of the corresponding software routines are explained. An expression for the throughput is presented. A queue theoretic model of the switch is developed. Analytical expressions for the overall average response time at the various queues are obtained. A number of graphs showing the average response time as a function of some parameters of the switch are also presented.

Arozullakh, M.↗