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Results for “Space-charge effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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99 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Effect of ground-state charge transfer on photoexcited charge transfer in transition metal dichalcogenide heterostructures

We report an experimental investigation on the effect of ground-state charge transfer and its induced electric field on photoexcited charge transfer in van der Waals heterostructures. Two heterostructure samples were fabricated by stacking an undoped WSe 2 monolayer with either a Nb-doped or undoped MoSe 2 monolayer. While no ground-state charge transfer is expected in the MoSe 2 /WSe 2 heterostructure, the doped holes in the MoSe 2 :Nb/WSe 2 heterostructure can transfer to WSe 2 , creating a space-charge electric field. By comparing the photoluminescence and time-resolved differential reflectance of the two heterostructures, we find that photoexcited hole transfer from MoSe 2 to WSe 2 is largely blocked by this field, whereas photoexcited electron transfer from WSe 2 to MoSe 2 is less affected. Furthermore, these results provide insight into the impact of doping on the charge-transfer performance of van der Waals heterostructures.

2D materials↗
DOE OSTI2021

Effects of emitting surfaces and trapped ions on the sheath physics and current flow in multidimensional plasma systems

Recent one-dimensional simulations of planar sheaths with strong electron emission have shown that trapping of charge-exchange ions causes transitions from space-charge limited (SCL) to inverse sheaths. However, multidimensional emitting sheath phenomena with collisions remained unexplored, due in part to high computational cost. As such, we developed a novel continuum kinetic code to study the sheath physics, current flow and potential distributions in two-dimensional unmagnetized configurations with emitting surfaces. For small negatively biased thermionic cathodes in a plasma, the cathode sheath can exist in an equilibrium SCL state. The SCL sheath carries an immense density of trapped ions, neutralized by thermoelectrons, within the potential well of the virtual cathode. For further increases of emitted flux, the trapped ion cloud expands in space. The trapped ion space charge causes an increase of thermionic current far beyond the saturation limit predicted by conventional collisionless SCL sheath models without ion trapping. For sufficiently strong emission, the trapped ion cloud consumes the entire 2D plasma domain, forming a mode with globally confined ions and an inverse sheath at the cathode. In situations where the emitted flux is fixed and the bias is swept (e.g. emissive probe), the trapped ions cause a large thermionic current to escape for all biases below the plasma potential. Strong suppression of the thermionic emission, required for the probe to float, only occurs when the probe is above the plasma potential.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Improving Longitudinal Impedance of Inductive Inserts

In this article, we discuss methods for improving the longitudinal impedance of inductive inserts used for space charge compensation in the proton storage ring (PSR) at Los Alamos Neutron Science Center (LANSCE) Facility. The PSR relies on inductive inserts to counteract the capacitive impedance produced by the space charge of the proton beam, which can otherwise lead to beam debunching. Existing inductive inserts, which utilize Toshiba M4C21A ferrite, have been effective but require heating to reduce resistive components that can cause instabilities at higher frequencies. This article explores the potential of alternative ferrite materials, specifically National Magnetics C2050, to enhance the performance of these inserts by reducing the need for heating and minimizing resistive impedance. Through both analytical modeling and CST Particle Studio simulations, it is demonstrated that optimized ferrite materials and geometries can significantly improve space charge compensation while mitigating instability risks, ultimately enhancing the performance of the PSR.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Space Charge Dominated Momentum Spread and Compensation Strategies in the Post-Linac Section of Proton Improvement Plan-II at Fermilab

The upcoming Proton Improvement Plan-II (PIP-II), designated for enhancements to the Fermilab accelerator complex, features a Beam Transfer Line (BTL) that channels the beam from the linac exit to the booster. In the absence of longitudinal focusing beyond the superconducting linac, the beam experiences an elevated momentum spread, primarily due to nonlinear space-charge forces, surpassing the allowable limit of 2.1e-4. This study presents a detailed examination of the space-charge-induced momentum spread and outlines mitigative strategies. The investigation includes the fine-tuning of a de-buncher cavity, analyzed in terms of operating frequency, longitudinal location, and gap voltage, under both standard and perturbed beam conditions—specifically accounting for momentum jitter and energy variation. The impact of buncher cavity misalignments on the beam's longitudinal phase space is also assessed. The paper concludes by recommending an optimized cavity configuration to effectively mitigate the observed increase in momentum spread along the BTL.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1977

Simultaneous holographic and photocurrent studies of the photorefractive effect in LiTaO3 and LiNbO3

In reduced LiNbO3:Mn both the photorefractive sensitivity and the simultaneously measured photocurrent result from drift with a polarization-dependent effective 'internal field' of about 6 kV/cm. In reduced undoped LiTaO3 the observed difference in applied fields of the minimum photorefractive sensitivity and zero photocurrent imply charge transport is by a mechanism that cannot be completely described by diffusion and drift in an electric field. The direct measurement of the harmonic content of phase gratings written in several LiNbO3 and LiTaO3 crystals shows termination of charge-transport results from the space-charge field of the hologram.

Spinhirne, J. M.↗
NASA NTRS1985

Theory of the high base resistivity n(+)pp(+) silicon solar cell and its application to radiation damage effects

Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satellite lifetimes in the space environment. However, contrary to expectations, it has been found that for cells with resistivities of 84 and 1250 ohm cm, the radiation resistance decreases as cell base resistivity increases. An analytical solar-cell computer model was developed with the objective to determine the reasons for this unexpected behavior. The present paper has the aim to describe the analytical model and its use in interpreting the behavior, under irradiation, of high-resistivity solar cells. Attention is given to boundary conditions at the space-charge region edges, cell currents, cell voltages, the generation of the theoretical I-V characteristic, experimental results, and computer calculations.

Goradia, C.↗
DOE OSTI2024

CEBAF Injector for K Long Beam Conditions

The Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Lab concurrently operates four experimental Halls with distinct bunch charge specifications and repetition rates. Numerous critical beam parameters within CEBAF are configured in the injector, some remaining unchanged throughout the accelerator. Consequently, the injector plays a crucial role in determining final beam characteristics, including bunch structure, beam sizes, bunch lengths, energy spread, and beam transmission. The Jefferson Lab KL experiment is scheduled to take place at CEBAF in Hall D, featuring a much lower bunch repetition rate of 7.80 MHz or 15.59 MHz, below the nominal values of 249.5 MHz or 499 MHz. Although the proposed average current of 5 ?A or 10 ?A is low compared to the maximum CEBAF cur- rent of approximately 180 ?A, the corresponding bunch charge is unusually high for CEBAF injector operation. This study focuses on the behavior of low-repetition-rate, high-bunch- charge (0.32 to 0.64 pC) beams in the CEBAF injector. We investigated the evolution and transmission of low-charge beams to space-charge dominated high-charge beams in the front end of the CEBAF injector for two configurations: the pre-existing CEBAF Phase 1 injector upgrade, operated at 130 kV, and the existing CEBAF Phase 2 injector upgrade, operated at 140 kV, 180 kV, and to be operated at 200 kV. The electron beam through the CEBAF injector is characterized using beam dynamics simulations and comparisons with the available measurements performed at 130 kV. Multi-objective genetic optimizations of the CEBAF injector were performed to determine the operating magnetic elements and RF settings for the evolution and transmission of low, moderate, and high charge beams in the CEBAF injector at 180 kV and 200 kV DC gun voltages. Subsequently, simulations at the same voltages were conducted to obtain the beam characteristics at the front end of the CEBAF injector. The laser spot size and laser pulse length at the cathode were varied to observe their effects on beam transmission in the injector at different voltages (130 kV, 180 kV, and 200 kV). Experimental studies at 130 kV, 140 kV, and 180 kV validate the simulations. Beam study measurements are carried out using EPICS tools, while optimizations and simulations are facilitated by General Particle Tracer. Based on the findings, optimal parameters for the upcoming Jefferson Lab KL experiment are proposed, utilizing a lower repetition rate and higher bunch charge

Pokharel, Sunil↗
DOE OSTI2026

Higher-order space-charge stability in anisotropic beams: Vlasov-Poisson derivation, refined dispersion relations, and stability charts

The Hofmann stability chart is used to screen working points in space-charge-dominated linacs. We identify two errors in its published higher-order dispersion relations: missing $(1\mp2\hatη^2/α)$ factors in the third-order $S^4$ coupling residues, and a sign error in the stated isotropic reduction of the fourth-order relation. Both corrections follow from Hofmann's Vlasov-Poisson equations without fitted parameters. They reproduce coherent tune-shift coefficients in the author's later monograph that the printed forms miss by 24% and 127%. Mode-resolved figures from a published application agree with the corrected relations and reject the printed forms, indicating an inconsistency between the 1998 equations and the calculations underlying those tested figures. We quantify the effect on the non-oscillatory stability chart. Inside the adopted $S^2\le10$ comparison domain, printed and corrected forms disagree on 0.73-2.11% of cells, with no preferred direction. Among excluded cells, disagreement reaches 22%, and the printed relation over-predicts instability at every sampled anisotropy. This concentration may help explain why the errors persisted, although it does not establish their historical cause. For PIP-II, the corrected chart flags four of thirty-two evaluable periods, including one on a third-order odd branch missed by a second-order screen. This count covers non-oscillatory modes only and remains conditional on an unresolved factor-five disagreement between two codes on transverse emittance growth.

Pathak, Abhishek [Fermilab] (ORCID:000000021704208↗