Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Solid State Memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Quantum Logic Enhanced Sensing in Solid-State Spin Ensembles

We demonstrate quantum logic enhanced sensitivity for a macroscopic ensemble of solid-state, hybrid two-qubit sensors. We achieve over a factor of 30 improvement in the single-shot signal-to-noise ratio, translating to an ac magnetic field sensitivity enhancement exceeding an order of magnitude for time-averaged measurements. Using the electronic spins of nitrogen vacancy (NV) centers in diamond as sensors, we leverage the on-site nitrogen nuclear spins of the NV centers as memory qubits, in combination with homogeneous and stable bias and control fields, ensuring that all of the ~10 9 two-qubit sensors are sufficiently identical to permit global control of the NV ensemble spin states. We find quantum logic sensitivity enhancement for multiple measurement protocols with varying optimal sensing intervals, including XY8 and DROID-60 dynamical decoupling, as well as correlation spectroscopy, using an applied ac magnetic field signal. The results are independent of the nature of the target signal and broadly applicable to measurements using NV centers and other solid-state spin ensembles. Furthermore, this work provides a benchmark for macroscopic ensembles of quantum sensors that employ quantum logic or quantum error correction algorithms for enhanced sensitivity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Quantum electronics and optics at the interface of solid neon and superfluid helium

Here, we predict a new quantum electronic structure at the interface between two condensed phases of noble-gas elements: solid neon and superfluid helium. An excess electron injected onto this interface self-confines its wavefunction into a nanometric dome structure. Its size varies with pressure and optical transitions cover a broad mid-infrared spectrum. A collection of such electrons can form a classical Wigner crystal resembling a quantum-dot array on a triangular lattice. Under ultrafast laser illumination, this Wigner crystal can exhibit the quantum optical phenomenon of superradiance in the picosecond time scale. The ultralong spin-coherence time and micron-scale deterministic configurability allow the electrons in this system to serve as quantum information carriers. Their spin states can be controlled and readout by on-chip single-electron devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Spin-Photon Entanglement of a Single Er 3 + Ion in the Telecom Band

Entanglement between photons and a quantum memory is a key component of quantum repeaters, which allow long-distance quantum entanglement distribution in the presence of fiber losses. Spin-photon entanglement has been implemented with a number of different atomic and solid-state qubits with long spin coherence times, but none directly emit photons into the 1.5 − μ m telecom band where losses in optical fibers are minimized. Here, we demonstrate spin-photon entanglement using a single rare earth ion in the solid-state Er 3 + coupled to a silicon nanophotonic cavity, which directly emits photons at 1532.6 nm. We infer an entanglement fidelity of 73(3)% after propagating through 15.6 km of optical fiber. This work opens the door to large-scale quantum networks based Er 3 + ions, leveraging scalable silicon device fabrication and spectral multiplexing. Published by the American Physical Society 2025

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Design of functional materials based on new principles of disorder. Final Report

Disorder is present to some extent in every material. The disorder can be sparse and localized – individual defects – or globally such as in a glass. Normally disorder is considered to be detrimental to function. However, this is not necessarily always the case. This project addressed the question: How does disorder provide new potentialities for the behavior of a material that would be absent in a crystalline material of the same composition? We have discovered a new principle for disordered matter: Independence of bond-level response. This work has introduced the possibility of creating new classes of mechanical meta-materials with applications everywhere from microscopic biological molecules (allostery) to large scale architectural disordered networks. During the course of this grant, we have subsequently elaborated on these novel ideas about bond-level independence of properties in disordered materials. In particular, this study has required that we understand the limits of disorder. That is, if crystals are perfect order, is there another diametrically opposed pole which is the most disordered state? We have shown that, in a well-defined way, jamming is one extreme disordered pole of rigid matter. Jamming is a far-from-equilibrium way of creating a rigid solid by rapidly quenching a random distribution of particles to a mechanically stable system at zero temperature. To understand the jammed state of matter, we have elucidated the low-frequency excitation of these systems. This has allowed a new way of understanding materials that cannot be easily classified as crystals or glasses. These ideas can be extended to address the mechanical properties of polycrystalline matter. Memory formation in matter can take inspiration from memory that occurs in a biological context. The issue of memory formation raises another set of questions at the heart of how the energy landscape is organized and how it can be manipulated to store information in a solid. This project has explored how to understand the degree to which multiple memories can be stored in a single system and has created a holistic understanding of how inputs can be used to create a desired response.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Incorporation of GTR (generation–transport–recombination) in semiconductor simulations

With the emergence of phase change memory, where the devices experience extreme thermal gradients (~100 K/nm) during transitions between low and high resistive states, the study of thermoelectric effects at small scales becomes particularly relevant. We had earlier observed asymmetric melting of self-heated nano-crystalline silicon micro-wires, where current densities of ~10 7 A/cm 2 were forced through the wires by 1 μs, ~30 V pulses. The extreme asymmetry can be explained by the generation of considerable amount of minority carriers, transport under the electric field, and recombination downstream, a heat transfer process we termed as generation–transport–recombination, which is in opposite direction of the electronic-convective heat carried by the majority carriers. Here, we present a full semiconductor physics treatment of this carrier-lattice heat transport mechanism and the contribution of the minority carriers on the evolution of the melt–solid interface, which can be applied to various high-temperature electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Content-aware foveated camera for multi-target tracking

Modern image sensors deliver substantial space-time bandwidth, yet indiscriminate acquisition often overwhelms memory, computation, and downstream perception. We present a content-aware, multi-foveated camera that dynamically reallocates sensing and magnification to multiple regions of interest (ROIs). A phase-only spatial light modulator (SLM) serves as a solid-state, inertia-free beam-steering and lens element, enabling per-frame field-of-view (FOV) reconfiguration and content-aware target tracking. By interleaving frames across foveae, our system preserves a wide-FOV situational context while refreshing each ROI at high rates, thereby reducing data volume without degrading task performance. We constructed a prototype employing a single-SLM, single-sensor architecture and demonstrated its application in real-time multi-object tracking with dynamic ROI maintenance across multiple viewpoints. The approach offers a general pathway to integrate detection, tracking, and segmentation algorithms in the acquisition loop, shifting workload from post hoc processing to intelligent capture.

Zang, Zihan [Univ. of California, Los Angeles, CA ↗
DOE OSTI2015

Performance upgrades to the MCNP6 burnup capability for large scale depletion calculations

The first MCNP based inline Monte Carlo depletion capability was officially released from the Radiation Safety Information and Computational Center as MCNPX 2.6.0. With the merger of MCNPX and MCNP5, MCNP6 combined the capability of both simulation tools, as well as providing new advanced technology, in a single radiation transport code. The new MCNP6 depletion capability was first showcased at the International Congress for Advancements in Nuclear Power Plants (ICAPP) meeting in 2012. At that conference the new capabilities addressed included the combined distributive and shared memory parallel architecture for the burnup capability, improved memory management, physics enhancements, and new predictability as compared to the H.B Robinson Benchmark. At Los Alamos National Laboratory, a special purpose cluster named “tebow,” was constructed such to maximize available RAM per CPU, as well as leveraging swap space with solid state hard drives, to allow larger scale depletion calculations (allowing for significantly more burnable regions than previously examined). As the MCNP6 burnup capability was scaled to larger numbers of burnable regions, a noticeable slowdown was realized.This paper details two specific computational performance strategies for improving calculation speedup: (1) retrieving cross sections during transport; and (2) tallying mechanisms specific to burnup in MCNP. To combat this slowdown new performance upgrades were developed and integrated into MCNP6 1.2.

42 ENGINEERING↗
DOE OSTI2025

Purcell-Enhanced Emissions from Diamond Color Centers in Slow Light Photonic Crystal Waveguides

Diamond color centers are promising candidates for optically addressable quantum memories, which motivates the development of efficient photonic interfaces, often using nanophotonic cavities with narrow spectral line widths and small mode volumes. However, they require perfect spectral and spatial overlap between the cavity mode and quantum emitter, which is challenging. This is especially true for solid-state quantum emitters that are often randomly positioned and suffer from inhomogeneous broadening. Another approach to enhance light-matter interaction across large optical bandwidths and areas is using slow light waveguides. Here, in this study, we demonstrate diamond slow light photonic crystal (PhC) waveguides optically coupled to embedded silicon-vacancy (SiV) color centers. We use the recently developed thin-film diamond approach to fabricate fully suspended two-dimensional PhC waveguides. We demonstrate waveguide modes with high group indices up to 70 and observe Purcell-enhanced emissions of the SiVs. Our approach represents a practical diamond platform for robust spin-photon interfaces with color centers.

2D photonic crystal waveguide↗
DOE OSTI2014

Effect of niobium addition on the martensitic transformation and magnetocaloric effect in low hysteresis NiCoMnSn magnetic shape memory alloys

The effect of Nb substitution for Ni in Ni{sub 45}Co{sub 5}Mn{sub 40}Sn{sub 10} magnetic shape memory alloys on their magnetic properties, martensitic transformation characteristics, transformation hysteresis, and magnetocaloric properties was studied using wavelength-dispersive X-ray spectroscopy, differential scanning calorimetry, and the temperature and field dependence of the magnetization. Ni{sub 45}Co{sub 5}Mn{sub 40}Sn{sub 10} alloy has a very low transformation hysteresis; however, the martensitic transformation temperatures are notably above room temperature, which is not desirable for magnetic refrigeration applications. In this study, small quantities of Nb substitution were shown to drastically shift the transformation temperatures to lower temperatures, at a rate of 68 K/at. % Nb, which is needed for household refrigeration. The austenite Curie temperature also decreased with increasing Nb content. However, a decrease in the latent heat of the martensitic transition was observed, which negatively affects the magnetic field-induced adiabatic temperature change capability. Still, the relatively large transformation entropy and the low transformation hysteresis make the Nb-doped Ni{sub 45}Co{sub 5}Mn{sub 40}Sn{sub 10} alloys potential candidates for solid state refrigeration near room temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Enhanced electrocaloric effect in displacive-type organic ferroelectrics

We explore the intrinsic feature of electrocaloric effect (ECE) accompanied by ferroelectric (FE)-paraelectric (PE) transition for displacive-type organic ferroelectrics using Green's function theory. It is demonstrated that decreasing elastic constant K or increasing spin-lattice coupling λ can enhance the ECE, as well as polarization P and transition temperature T{sub C}. Indeed, one expects that the optimal operating temperature for solid-state refrigeration is around room temperature, at which the ECE achieves its maximum. As T{sub C} is tuned to ∼310 K, it presents larger ECE response and remanent polarization with lower coercive field for smaller K value, suggesting that well flexible displacive-type organic ferroelectrics are excellent candidates both for electric cooling and data storage in the design of nonvolatile FE random-access memories. Furthermore, in an electric field, it provides a bridge between a Widom line that denotes FE-PE crossover above T{sub C} and a metaelectric transition line below T{sub C} that demonstrates an FE switching behavior with an antiparallel field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching

Digital computing is nearing its physical limits as computing needs and energy consumption rapidly increase. Analogue-memory-based neuromorphic computing can be orders of magnitude more energy efficient at data-intensive tasks like deep neural networks, but has been limited by the inaccurate and unpredictable switching of analogue resistive memory. Filamentary resistive random access memory (RRAM) suffers from stochastic switching due to the random kinetic motion of discrete defects in the nanometer-sized filament. Here, this stochasticity is overcome by incorporating a solid electrolyte interlayer, in this case, yttria-stabilized zirconia (YSZ), toward eliminating filaments. Filament-free, bulk-RRAM cells instead store analogue states using the bulk point defect concentration, yielding predictable switching because the statistical ensemble behavior of oxygen vacancy defects is deterministic even when individual defects are stochastic. Both experiments and modeling show bulk-RRAM devices using TiO2-X switching layers and YSZ electrolytes yield deterministic and linear analogue switching for efficient inference and training. Bulk-RRAM solves many outstanding issues with memristor unpredictability that have inhibited commercialization, and can, therefore, enable unprecedented new applications for energy-efficient neuromorphic computing. Beyond RRAM, this work shows how harnessing bulk point defects in ionic materials can be used to engineer deterministic nanoelectronic materials and devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Exploiting Internal Parallelism for Address Translation in Solid-State Drives

Solid-state Drives (SSDs) have changed the landscape of storage systems and present a promising storage solution for data-intensive applications due to their low latency, high bandwidth, and low power consumption compared to traditional hard disk drives. SSDs achieve these desirable characteristics using internal parallelism—parallel access to multiple internal flash memory chips—and a Flash Translation Layer (FTL) that determines where data are stored on those chips so that they do not wear out prematurely. However, current state-of-the-art cache-based FTLs like the Demand-based Flash Translation Layer (DFTL) do not allow IO schedulers to take full advantage of internal parallelism, because they impose a tight coupling between the logical-to-physical address translation and the data access. In this study to address this limitation, we introduce a new FTL design called Parallel-DFTL that works with the DFTL to decouple address translation operations from data accesses. Parallel-DFTL separates address translation and data access operations into different queues, allowing the SSD to use concurrent flash accesses for both types of operations. We also present a Parallel-LRU cache replacement algorithm to improve the concurrency of address translation operations. To compare Parallel-DFTL against existing FTL approaches, we present a Parallel-DFTL performance model and compare its predictions against those for DFTL and an ideal page-mapping approach. We also implemented the Parallel-DFTL approach in an SSD simulator using real device parameters, and used trace-driven simulation to evaluate Parallel-DFTL’s efficacy. Our evaluation results show that Parallel-DFTL improved the overall performance by up to 32% for the real IO workloads we tested, and by up to two orders of magnitude with synthetic test workloads. Finally, we also found that Parallel-DFTL is able to achieve reasonable performance with a very small cache size and that it provides the best benefit for those workloads with large request size or with high write ratio.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

In Situ Visualization of Radiation Transport Geometry

The ultimate goal for radiation transport is to perform full-core reactor modelling and simulation. Advances in computational simulation bring this goal close to reality and the newest Monte Carlo transport codes have begun to shift to using accelerators that have become a stalwart in the supercomputing and HPC space. Within the reactor modelling and simulation community, Monte Carlo transport simulations are considered the gold standard for simulation. Through the use of "combinatorial geometry" (constructive solid geomtry), complex models can be used with fewer approximation compromises while at the same time scale to run on some of the largest supercomputers in the world.Unfortunately, the state-of-the-art for "combinatorial geometry" visualization is to decompose the geometry into a mesh. This approach could require a significant amount of memory which is antithetical to in situ visualization. To address this issue, we introduce a ray caster for visualizing combinatorial geometry in radiation transport code. By only using the accelerators for the radiation transport code and leaving the CPU cores idle, there is an opportunity to conduct on node in situ visualization with the idle CPU cores, something domain experts have up to this point been unable to do. By utilizing VTK-m, the visualization can be run on the CPU as this particular application demands, but also run on any architecture that is supported by VTK-m, enabling future re-use across different platforms.

Kim, Mark B.↗
DOE OSTI2024

Petahertz electronics

Petahertz, or lightwave, electronics uses tailored optical waveforms to control charge carriers in an electronic circuit at petahertz frequencies. This may enable faster processing than conventional pulsed electronics, which cannot be scaled beyond gigahertz frequencies. In recent years, petahertz-scale currents driven by optical fields have been measured in solid-state systems and nanoscale structures, with several proof-of-principle demonstrations of sub-optical-cycle current generation and optical-field-resolved waveform detection at the sub-femtosecond to few-femtosecond scale. Recent work has taken the first steps towards digital and quantum operation by exploring optical-field-driven logic and memory functionality. Here, in this Review, we discuss the progress towards sub-cycle field-driven current injection, highlighting key theoretical concepts, experimental milestones, and questions remaining as we push towards realizing petahertz electronics for ultrafast optical waveform analysis, digital logic, communications, and quantum computation.

Heide, Christian↗
DOE OSTI2023

Quasi-deterministic localization of Er emitters in thin film TiO 2 through submicron-scale crystalline phase control

With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er 3+ ) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, making it well suited for applications in quantum communication. The deployment of Er 3+ emitters into a thin film TiO 2 platform has been a promising step toward scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. Here, we investigate laser annealing as a means to locally tune the optical resonance of Er 3+ emitters in TiO 2 thin films on Si. Using both nanoscale x-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of Er:TiO 2 is converted to rutile, the Er 3+ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Reentrant spin glass ordering in an Fe-based bulk metallic glass

We report the results of the complex susceptibility, temperature, and field dependence of DC magnetization and the nonequilibrium dynamics of a bulk metallic glass Fe{sub 40}Co{sub 8}Cr{sub 15}Mo{sub 14}C{sub 15}B{sub 6}Er{sub 2}. Solid indication of the coexistence of reentrant spin glass (SG) and ferromagnetic orderings is determined from both DC magnetization and AC susceptibility under different DC fields. Dynamics scaling of AC susceptibility indicates critical slowing down to a reentrant SG state with a static transition temperature T{sub s} = ∼17.8 K and a dynamic exponent zv = ∼7.3. The SG nature is further corroborated from chaos and memory effects, magnetic hysteresis, and aging behavior. We discuss the results in terms of the competition among random magnetic anisotropy and exchange interactions and compare them with simulation predictions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗