Observation of 0–π transition in SIsFS Josephson junctions
The 0–π transition in Superconductor-Insulator-superconductor-Ferromagnet-Superconductor (SIsFS) Josephson junctions (JJs) was investigated experimentally. As predicted by theory, an s-layer inserted into a ferromagnetic SIFS junction can enhance the critical current density up to the value of an SIS tunnel junction. We fabricated Nb′ | AlO{sub x} | Nb | Ni{sub 60}Cu{sub 40} | Nb JJs with wedge-like s (Nb) and F (Ni{sub 60}Cu{sub 40}) layers and studied the Josephson effect as a function of the s- and F-layer thickness, d{sub s} and d{sub F}, respectively. For d{sub s} = 11 nm, π-JJs with SIFS-type j{sub c}(d{sub F}) and critical current densities up to j{sub c}{sup π}=60 A/cm{sup 2} were obtained at 4.2 K. Thicker d{sub s} led to a drastic increase of the critical current decay length, accompanied by the unexpected disappearance of the 0–π transition dip in the j{sub c}(d{sub F}) dependence. Our results are relevant for superconducting memories, rapid single flux quantum logic circuits, and solid state qubits.