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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

Mahan, John E.↗
NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗
NASA NTRS1971

Design and development of solid state detector for SCADS

Solid state detector technology was applied to the fabrication and testing of cadmium sulfide and silicon narrow slit detector/preamplifier subassemblies. Fabrication of the silicon detector and the cadmium sulfide detectors was accomplished by utilizing cadmium sulfide cells and silicon cells. Fabrication of the preamplifiers for both silicon and cadmium sulfide slit type detectors was also carried out. The design of these preamplifiers was adjusted to ascertain that the limiting noise source of the detector/preamplifier subassembly is the detector and the input cable.

Source record↗
NASA NTRS2004

Performance of the Zero Degree Detector

The Zero Degree Detector (ZDD) is a large area pixelated silicon detector that measures secondary particle angular distributions from heavy ion interactions. The ZDD is part of the instrumentation being used in an ongoing measurement program to measure fragmentation cross-sections of heavy nuclei and evaluate the relative effectives of novel materials for spacecraft shielding. The initial performance of the ZDD has been assessed using the primary heavy ions measured. We report here on the ZDD's design, capabilities and signal calibration using heavy ions.

Christl, Mark J.↗
DOE OSTI2025

Silicon wafer fracture stress for tracking sensors in particle physics experiments

For the construction of the ATLAS Inner Tracker strip detector, silicon strip sensor modules are glued directly onto carbon fibre support structures using a soft silicone gel. During tests at temperatures below -35°C, several of the sensors were found to crack due to a mismatch in coefficients of thermal expansion between polyimide circuit boards with copper metal layers (glued onto the sensor) and the silicon sensor itself. While module assembly procedures were developed to minimise variations between modules, cold tests showed a wide range of temperatures at which supposedly comparable modules failed. The observed variance (fracture temperatures between -35°C and -70°C) for supposedly comparable modules suggests an undetected variation between modules suspected to be intrinsic to the silicon wafer itself. Therefore, a test programme was developed to investigate the fracture stress of representative sensor wafer cutoffs. This paper presents results for the fracture stress of silicon sensors used in detector modules.

Detector design and construction technologies and ↗
NASA NTRS1999

Fabrication of Pop-up Detector Arrays on Si Wafers

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Li, Mary J.↗
NASA NTRS2005

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

silicon carbide detectors↗
NASA NTRS1986

Low-background direct readout array performance

The development and evaluation of an integrated array of antimony-doped silicon detectors is described. The spectral range of extrinsic silicon-integrated arrays useful for low-background IR astronomical applications is extended to about 31 microns with this development. The 58 x 62-element array is accessed by a direct readout multiplexer. The device is evaluated with a flexible microcomputer-based drive and readout electronics system in a low-background test dewar. Acceptance testing indicates single-pixel NEPs in the mid-10 to the -18th W/sq rt Hz range, and good global uniformity statistics.

Goebel, J. H.↗
NASA NTRS1989

Application of the Langley plot for calibration of sun sensors for the Halogen Occultation Experiment (HALOE)

The calibration of the Halogen Occultation Experiment (HALOE) sun sensor is described. This system consists of two energy-balancing silicon detectors which provide coarse azimuth and elevation control signals and a silicon photodiode array which provides top and bottom solar edge data for fine elevation control. All three detectors were calibrated on a mountaintop near Tucson, Ariz., using the Langley plot technique. The conventional Langley plot technique was modified to allow calibration of the two coarse detectors, which operate wideband. A brief description of the test setup is given. The HALOE instrument is a gas correlation radiometer that is now being developed for the Upper Atmospheric Research Satellite.

Moore, Alvah S., Jr.↗
NASA NTRS1972

Design of the particles experiment subsystem of the Apollo lunar subsatellite.

In August 1971 an eighty pound subsatellite was ejected from Apollo 15 into lunar orbit. The subsatellite is expected to remain in lunar orbit for at least one year. The Particles Experiment Subsystem of the subsatellite was designed to implement the Particle Shadows/Boundary Layer Experiment. The objective of the experiment is to obtain data for the study of the formation and the dynamics of the earth's magnetosphere, the interaction of plasmas with the moon, and the physics of solar flares. The design of the particle detector telescopes is considered together with details of collimator design, silicon detectors, the absorber foil, and the power subsystems. The instrument performance in lunar orbit is discussed.

Baum, J. J.↗
NASA NTRS1965

Biology and Medicine, Spring 1965 Semiannual report

Reports on radiobiology studies, pion studies with silicon detectors, immunology, ultracentrifuge rotor temperature and speed measurement by radio telemetry, and radiosensitivity investigations

RADIOBIOLOGY↗
NASA NTRS1966

Biology and Medicine, Fall 1965 Semiannual report

Reports on radiation medicine, radiobiology, EPR STUDIES of OH radicals in ice, radiation doses on manned space missions, silicon detectors, and recovery of yeast after irradiation

X-RAY IRRADIATION↗