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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A High-Voltage High-Reliability Scalable Architecture for Electric Vehicle Power Electronics (Final Report)

This project developed and demonstrated new composite converter technologies that lead to high power density (> 20 kW/L) at power levels of 10s of kW, 100s of kW, or possibly higher, with fundamental advances in converter efficiency and Q that lead to substantial increases in mean time to failure (MTTF). These advantages were realized through development of new composite converter topologies that perform buck, boost, or other conversion functions and that are scalable to higher voltage and power levels through sharing of voltage and current stresses among multiple dissimilar partial-power converter modules. The project led to experimental demonstration of a125 kW multifunction electric vehicle power conversion system having in-creased dc bus voltage (950 V nominal, 1200 V peak) that interfaces a 200 V to 400 V battery pack, and that includes integrated level 2 wired charging and wireless charging functions. The project incorporated SiC MOSFET modules having switching frequencies in excess of 100 kHz, planar magnetics, a hierarchical control architecture that enables scaling to higher voltages and powers with additional converter modules, and a high-power density in excess of 20 kW/L. The research demonstrated how a more complex converter approach can increase mean-time-to-failure, even though the number of elements is increased. This is achieved through significant reduction of temperature rise through fundamentally superior converter circuit topologies. The research also demonstrated new high power planar magnetics that increase power density. The technology is appropriate to a variety of applications including EV power trains, EV charging, PV inverters, battery storage, and similar areas. These systems potentially can be manufactured in the U.S.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

High-Efficiency, Medium-Voltage-Input, Solid-State-Transformer-Based 400-kW/1000V/400A Extreme Fast Charger for Electric Vehicles

Range anxiety and long battery charging time continue to be critical challenges to mass adaptation of EVs. A major identified gap to wider adoption of BEVs is the ability and availability to refuel quickly or to fast charge. Studies have shown that in areas where drivers have access to 50-kW or 120-kW fast charge stations, annual electric vehicle (EV) miles traveled (i.e., eVMT) increased by over 25%, even in cases where fast charging was used for 1% to 5% of total charging events. Charge stations of higher power not only alleviate the “range anxiety” and reduce the driver’s waiting time, but also requires less investment. Michigan Energy Office completed a study in early 2019 titled “Electric Vehicle Charger Placement Optimization in Michigan: Phase I – Highways”. This study finds a system with 150kW chargers, though more expensive individually, actually has lower total system cost when compared to a 50kW charging system when serving the same battery size EV. To be truly competitive to the ICEV refueling experience, even higher power stations are necessary. However, high power charge stations would create large power draws from the grid. If this occurs during peak demand periods, grid capacity could be overloaded. This problem needs to be addressed to reduce the impact on the electric utility infrastructure. The main goal of this project is to develop a 400-kW/400-A XFC system targeting total efficiency of 96.5 percent from the MVAC grid to a vehicle. The novel SST power cell topology, combined with a new silicon carbide (SiC) MOSFET device, enables a 3.5 percent improvement in system efficiency, a 50-percent smaller equipment footprint, and four times less weight than today’s DCFC systems. The SST technology would directly utilize MVAC at 4.8-kV or 13.2-kV. This would eliminate the line frequency transformer (LFT), which steps down medium-voltage AC to 3-Phase 480-V line-to-line voltage in current DCFC systems.

42 ENGINEERING↗
DOE OSTI2023

High-Efficiency Modular SiC-based Power-Converter for Flexible-CHP Systems with Stability-Enhanced Grid-Support Functions

This project seeks to develop a modular, scalable MV power converter featuring stability-enhanced grid-support functions for future grid-interface applications in flexible combined heat and power (F-CHP) cogeneration plants, being fully compliant with the IEEE Standard 1547, category B—for operation in local areas with high aggregated distributed energy resource (DER) penetration, and also with the IEEE standard for the specification of microgrid controllers, namely IEEE Std 2030.7, with the goal to enable F-CHP systems for both microgrid and standalone applications. Further, the proposed converter will use a modular circuit topology, the MMC, which is scalable both in voltage and current by interconnecting power-cell building blocks, thus flexibly suiting the needs of F-CHP systems in the 1–20 MWe range. Furthermore, the use of 10 kV SiC MOSFET devices will minimize the number of power-cells needed to operate in 2–13.8 kV MV distribution systems, but more importantly, they will render feasible a power conversion efficiency > 98 %, and a power density > 10 kW/l. This is highly relevant given that these are two key performance metrics that will further increase the value of F-CHP systems by shortening the time required to recover their investment costs.

14 SOLAR ENERGY↗
DOE OSTI2025

Megawatt-Class, High-Voltage SiC Power Electronics Converters for Advanced Manufacturing with Grid Support Services

DE-EE0009135 aimed to push the 10kV SiC MOSFET based power electronics to 3-phase 13.8kV 10MW to be used as a Megawatt Class Medium-Voltage Power Conditioning Systems – PCS – to enable “Resilient Distribution through Grid-dispatching and Uninterrupted Quality Power to Manufacturing Facilities” during transitory grid disturbances. As a stretch to those goals, Eaton added the load power peak shaving opportunity.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Benefits of high-voltage SiC-based power electronics in medium-voltage power-distribution grids

Medium-voltage (MV) power electronics equipment has been increasingly applied in distribution grids, and high-voltage (HV) silicon carbide (SiC) power semiconductors have attracted considerable attention in recent years. This paper first overviews the development and status of HV SiC power semiconductors. Then, MV power-converter applications in distribution grids are summarized and the benefits of HV SiC in these applications are presented. Microgrids, including conventional and asynchronous microgrids, that can fully demonstrate the benefits of HV SiC power semiconductors are selected to investigate the benefits of HV SiC in detail, including converter-level benefits and system-level benefits. Finally, an asynchronous microgrid power-conditioning system (PCS) prototype using a 10 kV SiC MOSFET is presented.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRSDate not supplied

Hard Fault Protection for a Silicon Carbide-Based Aerospace Motor Drive

Due to increasingly high DC link voltages and further advancements in the current density of silicon carbide (SiC) MOSFETs, it has become evident that conventional IGBT protection methods are not sufficient to protect these devices from overcurrent during low-inductance fault events. The use of an air core Rogowski coil topology was explored to see if it could mitigate these hard fault events. The design of this circuit resulted in safe shutdown of a low impedance phase-tophase fault, tested up to DC link voltages of 1 kV.

High Voltage↗
DOE OSTI2021

Evaluation of Low-Pressure-Sintered Multi-Layer Substrates for Medium-Voltage SiC Power Modules: Preprint

Direct-bonded aluminum (DBA) multi-layer substrates have been fabricated using low-pressure silver sintering. These multi-layer substrates can be used to reduce the peak electric field strength inside power modules. This benefit is particularly important for medium-voltage silicon carbide (SiC) MOSFETs due to their higher operating voltages. The voiding content and defect density of the bond used to create the multi-layer substrate stackup is critical to the thermal performance and reliability of the power module. This work two low-pressure-assisted sintering techniques; one using nano-silver preform and the other using nano-silver paste to bond 23 mm by 49 mm DBA substrates. Scanning acoustic microscopy (C-SAM) is used to evaluate the bond quality after sintering. To evaluate the reliability of the sintered multi-layer substrates, passive thermal cycling from –40 °C to 200 °C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1,000 thermal cycles, minor cracking was observed, but no failures have occurred.

28 EE - Advanced Manufacturing Office (EE-5A)↗
NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗
DOE OSTI2024

Investigation on gate oxide reliability under gate bias screening for commercial SiC planar and trench MOSFETs

This paper evaluates the impact of the fast high gate-voltage screening technique on gate oxide reliability of commercial 1.2 kV 4H-SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) with planar and trench gate structures. The measurements are conducted on packaged devices with the intent that the results will be applicable to wafer-level screening. The threshold voltage (V th ) of SiC MOSFETs is measured before and after various screening treatments and recovery process. In addition, constant-voltage time-dependent dielectric breakdown (TDDB) measurements are performed on SiC MOSFETs to obtain the intrinsic lifetime of gate oxide. The objective of this study is to determine the optimal screening conditions and improve screening efficiency without degradation of gate oxide reliability, such as V th shift and reduced oxide intrinsic lifetime. Due to the differences in the gate oxidation process and structural design of SiC planar and trench MOSFETs, the two types of devices exhibit different oxide reliability in the screening process. The recommended screening conditions obtained in this paper reveal that SiC trench MOSFETs can accept higher screening voltages compared to SiC planar MOSFETs. Hence, it can be concluded that more efficient screening techniques can be adopted for SiC MOSFETs with thicker gate oxide to meet the requirements of industrial applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High Voltage Multiplier: A New, Compact Design using SiC High Frequency MOSFETs

In this report, power supply models for particle accelerators are examined and electrical equivalent model for a high-voltage multiplier power supply is developed. The ultimate goal is to provide the blue prints for the realization of real world models to power both the electrical and magnetic dipoles that make up the key components of the typical particle accelerator assembly.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗
DOE OSTI2021

Silicon carbide power inverter/rectifier for electric machines

The present disclosure involves a two stage inverter, a system for electrical power conversation, and a method of converting electrical power using silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). One example implementation includes using two or more SiC MOSFETs in series with each MOSFET having a gate terminal for triggering a state switch between an on (conducting) and off (non-conducting) state of the MOSFET. An AC terminal is connected between the series SiC MOSFETS, and the series SiC MOSFETs are connected across a DC bus and in parallel with one or more capacitors.

Shenoy, Suratkal P.↗
NASA NTRS2024

NASA's X-57 High Lift Motor Controller: Detailed Design, Test Results, and Outcomes

NASA's X-57 all-electric aircraft was a research project aimed at investigating lightweight and efficient electric propulsion components. The general approach was to utilize a distributed electric propulsion (DEP) design. An essential component of this design was the High Lift Motor Controller (HLMC), a motor drive which provided power to the High Lift Motors (HLMs) and High Lift Propellers (HLPs) responsible for providing additional thrust for take-off and landing. This paper presents the detailed design, test results, and outcomes from the development of the HLMC, a 14 kW, 1kg, 98.3% efficient, outer mold line (OML) cooled, silicon carbide (SiC) MOSFET-based inverter and controller.

Electric Aircraft↗
NASA NTRSDate not supplied

NASA's X-57 High Lift Motor Controller: Detailed Design, Test Results, and Outcomes

NASA's X-57 all-electric aircraft was a research project aimed at investigating lightweight and efficient electric propulsion components. The general approach was to utilize a distributed electric propulsion (DEP) design. An essential component of this design was the High Lift Motor Controller (HLMC), a motor drive which provided power to the High Lift Motors (HLMs) and High Lift Propellers (HLPs) responsible for providing additional thrust for take-off and landing. This paper presents the detailed design, test results, and outcomes from the development of the HLMC, a 14 kW, 1kg, 98.3% efficient, outer mold line (OML) cooled, silicon carbide (SiC) MOSFET-based inverter and controller.

Electric Aircraft↗
DOE OSTI2021

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC Power IC technology. The reported devices and circuits are fabricated on a N-/N+ 4H-SiC substrate at 150mm, production grade- Analog Devices Inc. (ADI) Hillview fabrication facility located in San Jose. Here, the static performance characteristics of HV NMOS and LV CMOS are reported. For future high temperature applications, the static performances are fully characterized and are reported up to 200oC. Finally, to validate the fabricated CMOS, a 5-stage ring oscillator is also demonstrated.

4H-SiC↗