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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Evaluation of Kapton pyrolysis, arc tracking, and flashover on SiO(x)-coated polyimide insulated samples of flat flexible current carriers for Space Station Freedom

Kapton polyimide wiring insulation was found to be vulnerable to pyrolization, arc tracking, and flashover when momentary short-circuit arcs have occurred on aircraft power systems. Short-circuit arcs between wire pairs can pyrolize the polyimide resulting in a conductive char between conductors that may sustain the arc (arc tracking). Furthermore, the arc tracking may spread (flashover) to other wire pairs within a wire bundle. Polyimide Kapton will also be used as the insulating material for the flexible current carrier (FCC) of Space Station Freedom (SSF). The FCC, with conductors in a planar type geometric layout as opposed to bundles, is known to sustain arc tracking at proposed SSF power levels. Tests were conducted in a vacuum bell jar that was designed to conduct polyimide pyrolysis, arc tracking, and flashover studies on samples of SSF's FCC. Test results will be reported concerning the minimal power level needed to sustain arc tracking and the FCC susceptibility to flashover. Results of the FCC arc tracking tests indicate that only 22 volt amps were necessary to sustain arc tracking (proposed SSF power level is 400 watts). FCC flashover studies indicate that the flashover event is highly unlikely.

Stueber, Thomas J.↗
NASA NTRS2003

Safety Performance of Small Lithium-Ion Cells in High Voltage Batteries

Topics covered include: Small-cell EAPU work done by NASA-JSC & COM DEV; Looking at safety features (short circuit protection - PTCs); Early tests showed that long strings do not withstand short circuit; a) Some PTCs experience large negative voltages; b) Destructive results. Solution: group cells into shorter substrings, with bypass diodes Work included: a) Tests with single cells shorted; b) Tests with single cells with imposed-negative voltages; c) 6s, 7s and 8s string shorts; and d) Tests with protection scheme in place, on 12s and 41s x 5p.

Cowles, Philip R.↗
NASA NTRS1976

Analysis of epitaxial drift field N on P silicon solar cells

The performance of epitaxial drift field silicon solar cell structures having a variety of impurity profiles was calculated. These structures consist of a uniformly doped P-type substrate layer, and a P-type epitaxial drift field layer with a variety of field strengths. Several N-layer structures were modeled. A four layer solar cell model was used to calculate efficiency, open circuit voltage and short circuit current. The effect on performance of layer thickness, doping level, and diffusion length was determined. The results show that peak initial efficiency of 18.1% occurs for a drift field thickness of about 30 micron with the doping rising from 10 to the 17th power atoms/cu cm at the edge of the depletion region to 10 to the 18th power atoms/cu cm in the substrate. Stronger drift fields (narrow field regions) allowed very high performance (17% efficiency) even after irradiation to 3x10 to the 14th power 1 MeV electrons/sq cm.

Baraona, C. R.↗
NASA NTRS1978

A simple theory of back surface field /BSF/ solar cells

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

Von Roos, O.↗
NASA NTRS1981

Nickel-doped silicon for solar cells

Large grain boundaries in polycrystals act as gettering centers for nickel precipitates, improving cell performance. Effects are described in report. Data on open-circuit voltage, short-circuit current, maximum power, and conversion efficiency for illuminated cells are compared with values for undoped cells. Dark forward current versus voltage is also measured for cell types.

Salama, A. M.↗
NASA NTRS1982

Photovoltaic properties of ferroelectric BaTiO3 thin films RF sputter deposited on silicon

Ferroelectric thin films of BaTiO3 have been successfully deposited on n-type silicon substrates at temperatures above 500 C by RF sputtering in an O2/Ar atmosphere. Analysis by X-ray diffraction patterns show that films deposited at room temperature are amorphous. At temperatures above 500 C, crystalline BaTiO3 films with a tetragonal structure are obtained. The polarization-electric field (P-E) hysteresis loops and a broad peak in the dielectric constant versus temperature curve at Curie point indicate that the RF sputtered BaTiO3 films are ferroelectric. An anomalous photovoltaic effect is observed in these thin films which is related to the remanent polarization of the material. The results on open-circuit and short-circuit measurements provide an important basis for a better understanding of the role of photovoltaic field, photovoltaic current, and the pyroelectric properties in photoferroelectric domain switching.

Dharmadhikari, V. S.↗
NASA NTRS1986

Reliability of photovoltaic modules

In order to assess the reliability of photovoltaic modules, four categories of known array failure and degradation mechanisms are discussed, and target reliability allocations have been developed within each category based on the available technology and the life-cycle-cost requirements of future large-scale terrestrial applications. Cell-level failure mechanisms associated with open-circuiting or short-circuiting of individual solar cells generally arise from cell cracking or the fatigue of cell-to-cell interconnects. Power degradation mechanisms considered include gradual power loss in cells, light-induced effects, and module optical degradation. Module-level failure mechanisms and life-limiting wear-out mechanisms are also explored.

Ross, R. G., Jr.↗
NASA NTRS1988

p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy

p/n InP homojunction solar cells with a modified contacting scheme have been fabricated from wafers grown by liquid phase epitaxy. A p(+)-In(0.53)Ga(0.47)As contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminaate surface spiking problems at the front surface. The highest conversion efficiency (total area) obtained under AM0 illumination is 15.0 percent. The corresponding open-circuit voltage, short-circuit current density, and fill factor for the best cell are 0.866 V, 29.3 mA/sq cm, and 81.0 percent, respectively.

Choi, K. Y.↗
NASA NTRS1991

Calculated performance of p(+)n InP solar cells with In(0.52)Al(0.48)As window layers

The performance of indium phosphide solar cells with lattice matched wide band-gap In(0.52)Al(0.48)As window layers was calculated using the PC-1D computer code. The conversion efficiency of p(+)n InP solar cells is improved significantly by the window layer. No improvement is seen for n(+)p structures. The improvement in InP cell efficiency was studied as a function of In(0.52)Al(0.48)As layer thickness. The use of the window layer improves both the open circuit voltage and short circuit current.For a typical In(0.52)Al(0.48)As window layer thickness of 20 nm, the cell efficiency improves in excess of 27 percent to a value of 18.74 percent.

Jain, R. K.↗
NASA NTRS1992

Extra high speed modified Lundell alternator parameters and open/short-circuit characteristics from global 3D-FE magnetic field solutions

The combined magnetic vector potential - magnetic scalar potential method of computation of 3D magnetic fields by finite elements, introduced in a companion paper, is used for global 3D field analysis and machine performance computations under open-circuit and short-circuit conditions for an example 14.3 kVA modified Lundell alternator, whose magnetic field is of intrinsic 3D nature. The computed voltages and currents under these machine test conditions were verified and found to be in very good agreement with corresponding test data. Results of use of this modelling and computation method in the study of a design alteration example, in which the stator stack length of the example alternator is stretched in order to increase voltage and volt-ampere rating, are given here. These results demonstrate the inadequacy of conventional 2D-based design concepts and the imperative of use of this type of 3D magnetic field modelling in the design and investigation of such machines.

Wang, R.↗
NASA NTRS1996

Solar Dynamic Power System Fault Diagnosis

The objective of this research is to conduct various fault simulation studies for diagnosing the type and location of faults in the power distribution system. Different types of faults are simulated at different locations within the distribution system and the faulted waveforms are monitored at measurable nodes such as at the output of the DDCU's. These fault signatures are processed using feature extractors such as FFT and wavelet transforms. The extracted features are fed to a clustering based neural network for training and subsequent testing using previously unseen data. Different load models consisting of constant impedance and constant power are used for the loads. Open circuit faults and short circuit faults are studied. It is concluded from present studies that using features extracted from wavelet transforms give better success rates during ANN testing. The trained ANN's are capable of diagnosing fault types and approximate locations in the solar dynamic power distribution system.

Momoh, James A.↗
NASA NTRS1990

Recent results from the InP homojunction cell module on the LIPS III spacecraft

The flight performance of the NASA Lewis Research Center's indium phosphide homojunction cell module on the LIPs III spacecraft is presented. Four n+-p diffused junction cells, an early product of an InP development program, were flown. The voltage range of the data prohibits determination of the open-circuit voltage or the maximum power point. However, analysis of the 32 months of short-circuit current data reveals a slight increase, not the 4 percent decrease expected from radiation tolerance studies. This increase may be due to continual cleaning of possible prelaunch dust contamination or changes in data acquisition system calibration. For all cells, the average short-circuit current remains below prelaunch values.

Brinker, David J.↗
NASA NTRS1984

Surface and allied studies in silicon solar cells

Significant improvements were made in the short-circuit current-decay method of measuring the recombination lifetime tau and the back surface recombination velocity S of the quasineutral base of silicon solar cells. The improvements include a circuit implementation that increases the speed of switching from the forward-voltage to the short-circuit conditions. They also include a supplementation of this method by some newly developed techniques employing small-signal admittance as a function of frequency omega. This supplementation is highly effective for determining tau for cases in which the diffusion length L greatly exceeds the base thickness W. Representative results on different solar cells are reported. Some advances made in the understanding of passivation provided by the polysilicon/silicon heterojunction are outlined. Recent measurements demonstrate that S 10,000 cm/s derive from this method of passivation.

Lindholm, F. A.↗
NASA NTRS1981

Shielded conductor cable system

A cable system carries one or more insulated conductors completely enclosed within a shield having one end connected to ground. A lightning protector network connects the other end of the shield to ground. The protector network is normally open circuited and becomes only short circuited in response to a momentary abnormal surge voltage induced in the shield. The protector network's open to short impedance change completes a conductive circuit path between the shield and the two grounded ends for conducting a shield current which has the desired effect of protecting the signal carrying conductors in the cable from the large surge voltage.

Castle, K. D.↗
NASA NTRS1979

On the determination of diffusion lengths by means of angle-lapped p-n junctions

A standard procedure for determining the minority carrier diffusion length by means of SEM consists of scanning an angle-lapped surface of a p-n junction and measuring the resulting short circuit current as a function of beam position. The present paper points out that the usual expression linking the short circuit current induced by the electron beam to the angle between the semiconductor surface and the junction plane is incorrect. The correct expression is discussed and it is noted that, for angles less than 10 deg, the new and the old expression are practically indistinguishable.

Von Roos, O.↗
NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Culik, J. S.↗
NASA NTRS1978

Transient response to three-phase faults on a wind turbine generator

In order to obtain a measure of its responses to short circuits a large horizontal axis wind turbine generator was modeled and its performance was simulated on a digital computer. Simulation of short circuit faults on the synchronous alternator of a wind turbine generator, without resort to the classical assumptions generally made for that analysis, indicates that maximum clearing times for the system tied to an infinite bus are longer than the typical clearing times for equivalent capacity conventional machines. Also, maximum clearing times are independent of tower shadow and wind shear. Variation of circuit conditions produce the modifications in the transient response predicted by analysis.

Gilbert, L. J.↗
NASA NTRS1978

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗