Challenges of Remote Epitaxy in UHV: Clean Semiconductor-2D Material Stacks
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de Jesus Lopez, Manny [Sandia National Laboratorie↗
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Results for “Semiconductor materials”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Dielectric materials in semiconductor devices.
Dielectric thin film electrical and mechanical properties and preparation for semiconductor devices, emphasizing Si compounds
Chu, T. L.↗
Growth of diamondlike films for power applications
Diamond has a high thermal conductivity (approximately 5 times that of copper) and is an ideal heat sink material for high power semiconductor devices as well as being of interest as a semiconductor material. Numerous vacuum deposition processes are being evaluated by NASA-LeRC which have demonstrated the capability to deposit carbon films having some of the properties of diamond. Current activities include Investigation of high deposition rate vacuum processes suitable for synthesis of diamondlike carbon films. The results of recent film characterization tests are reported.
Banks, B. A.↗
Crystal growth of SiC for electronic applications
The development of SiC as a high temperature semiconductor material is discussed, focusing on the epitaxial growth of single crystal SiC films on inexpensive single crystal silicon wafers. Progress in the improvement of film morphology and the elimination of antiphase disorder is examined. Potential candidate materials for high temperature semiconductor devices are compared and SiC films are evaluated.
Matus, Lawrence G.↗
Paper-Thin Plastic Film Soaks Up Sun to Create Solar Energy
A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.
Source record↗
Materials sciences research
Research projects involving materials research conducted by various international test facilities are reported. Much of the materials research is classified in the following areas: (1) acousto-optic, acousto-electric, and ultrasonic research, (2) research for elucidating transport phenomena in well characterized oxides, (3) research in semiconductor materials and semiconductor devices, (4) the study of interfaces and interfacial phenomena, and (5) materials research relevant to natural resources. Descriptions of the individual research programs are listed alphabetically by the name of the author and show all personnel involved, resulting publications, and associated meeting speeches.
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Gate protective device for insulated gate field-effect transistors
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region. Separation of layers is necessary to prevent shorting out junctions between alternating regions.
Sunshine, R. A.↗
Micromachining Of Silicon
Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.
Dickman, John E.↗
Single-crystal semiconductor films grown on foreign substrates
Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
Vohl, P.↗
Zone-refining encapsulated semiconductors
Reflector directs intense, sharply focused heat precisely where it is needed for zone-refining semiconductor materials. Reflector is especially suited for compound semiconductors which must be sealed inside capsule to prevent vaporizing during zone refining. Device is flattened toroid with elliptical-cross-section, much like horizontal partly-inflated inner tube.
Davidson, M. C.↗
Low-Bandgap Thermovoltaic Materials And Devices
Proposed class of thermovoltaic devices made of semiconductor materials having relatively low energy gaps between valence and conduction electron-energy bands ("low bandgaps" for short). Devices exhibit relatively high energy-conversion efficiencies while receiving energy from sources at temperatures lower than those used with older thermovoltaic devices.
Ong, Tiong↗
Ultrafast nano-imaging and nano-spectroscopy
Ultrafast pump–probe nano-imaging combines scanning probe-based optical near-field microscopy with ultrafast spectroscopy to enable imaging with deep sub-wavelength spatial resolution, femtosecond temporal resolution and simultaneous spectral resolution. Ultrafast nano-imaging has gained increased attention for its ability to provide far-from-equilibrium excitation and excited-state contrast. With coherent and nonlinear probing, coupled electron, spin and lattice dynamics on elementary timescale and length scale can be resolved. Through nano-movies, ultrafast nano-imaging visualizes correlated quantum dynamics underlying the properties of solid-state materials, semiconductors, molecular electronic, photonic, photovoltaic and other functional materials. With nanometre spatial resolution, this method probes elementary dynamic processes across multiple length scales that are otherwise obscured in conventional ultrafast spectroscopy in which heterogeneities are spatially averaged. Furthermore, this Primer describes the theoretical background and experimental implementation of ultrafast nano-imaging; signal interpretation and modelling; representative examples and a perspective for the future development of the field.
Microscopy↗
The Genesis Non-flight Implant Sample Archive
Introduction: For the past 20 years the Genesis science community has been analyzing solar wind captured in sample collectors now curated at Johnson Space Center (JSC). Non-flown flight like collector materials (non-flight) considered reference material was always allocated by the JSC Genesis team for testing experimental procedures. However, to expedite Genesis science, distribution of non-flown reference materials were also provided by, D. S. Burnett (Genesis PI, Caltech) and A. J. G. Jurewicz (ASU) who were funded to aid all Genesis PIs by providing engineering test materials archived at Caltech pre-flight as well as ion implants into these materials [1]. Implanted materials (non-flight reference, flight-like semiconductor materials, and NIST SRM glass) received from the Caltech collection during a pilot project are being used to develop an accession procedure for the purpose of making these materials available to researchers in the future. These implant samples are important because they can be utilized as measurement standards [2]. This is a work in progress and this work reports progress in documentation and imaging. The pilot program received 63 implanted reference materials with known implanted ions. Genesis Non-Flight Database: The existing non-flight material database was modified to allow for the description of implant sessions and to allow correlation of the implant information to individual specimens. An implant session has three main components: a known ion, a known dose (ion/cm2), and a known energy (keV). Procedure: Laboratory Procedure. Upon receiving non-flight analytical standards (independently calibrated implants), or implant samples (nominally calibrated implants), they will be imaged in their current containers to capture any information written before being brought into the Genesis Sample Laboratory. Documentation is provided by the donor and used for correlating the data between the implant sessions and implant samples. This information is not verified by Genesis Curation. The microscope used to image samples in the laboratory has an automated stage with a stainless-steel plate to hold samples and a camera that utilizes the software Surveyor to take photomosaic images of the implant samples. The camera attached to the microscope is a QICAM High Performance IEEE 1394 FireWire Digital CCD Camera. This setup, shown in Fig. 1, allows for photomosaics of small-scale samples with a 10x objective or 25x objective. Examples of images taken with this microscope setup are shown in Fig.2 and Fig. 3. After imaging, samples get stored in a clean fluoroware container or polypropylene vial depending on sample size for long term storage. Database Procedure. The Genesis Non-Flight Database currently allows for the addition of implant sessions. The required fields for adding an implant session are the implant session ion, the implant session dose, and the implant session energy. There are also fields for the date and vendor of the sessions as well as a field for if the session was calibrated or not. Once an implant session has been inserted into the database, additional documentation from the session can be attached. The database will automatically assign an Implant Session Number. After inserting an implant session, the implanted samples can be inserted. The fields required for an implant sample are the material of the sample and the size of the sample. The Generic name for the implant sample with be automatically generated by the database once it has been inserted. Implant sample numbers begin with 3X to distinguish from flown Genesis sample numbers. There are also fields for processors to add the location (room, cabinet, tray) and container type (fluoroware, polypropylene vial). Once an implant session and an associated sample(s) have been inserted into the database the sample can be then tied to all associated implant sessions. An implant sample can be tied to multiple implant sessions. Future work: For curation, future work consists of creating an online catalogue for implant samples as well as updating the database with more samples as we receive them. For the scientific community these implant samples have many potential uses. For Genesis research, they are directly applicable for testing and, in some cases, as analytical standards. For non-Genesis research, implants (especially calibrated implants) could be used for calibrating other, unique planetary materials [1].
C D Calva↗
Diagnostic for Plasma Enhanced Chemical Vapor Deposition and Etch Systems
In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies ion the processing of semiconductor materials arising from understanding etch chemistries are being developed through a research collaboration between Stanford University and NASA-Ames Research Center, Although a great deal of laboratory-scale research has been performed on many of materials processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. In addition, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. The research described involves the study of plasmas used in semiconductor processes. An inductively coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics and chemistries. This ICP source generates plasmas with higher electron densities (approximately 10(exp 12)/cu cm) and lower operating pressures (approximately 7 mTorr) than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The motivation for this study is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas-phase and surface reaction rates. species concentration, temperature, ion energy distribution, and electron number density. A wide variety of diagnostic techniques are under development through this consortium grant to measure these parameters. including molecular beam mass spectrometry (MBMS). Fourier transform infrared (FTIR) spectroscopy, broadband ultraviolet (UV) absorption spectroscopy, a compensated Langmuir probe. Additional diagnostics. Such as microwave interferometry and microwave absorption for measurements of plasma density and radical concentrations are also planned.
Cappelli, Mark A.↗
Determination of resistivity and Hall coefficient of semiconducting materials between 80 deg K and 375 deg K
Determination of resistivity and Hall coefficient of semiconductor materials
Ruff, R. C.↗
Suppression of Marangoni Convection in Float Zones
The basic purpose of this program is to demonstrate by means of an Earth-based 1-g experiment that the undesirable Marangoni (surface tension) convection can be suppressed or significantly reduced by means of gas jets directed tangentially to the free surface of the liquid in a float zone. These jets will establish the tangential shear stress field over the surface which must be adjusted to equal the counter-stress resultant of the Marangoni shear stress which causes the convection. For proposed materials processing in space (o-g), particularly of important, highly reactive semiconductor materials, e.g., silicon, microgravity will virtually eliminate the unwanted thermal-buoyancy convection in the liquid silicon, but will have no effect in reducing the Marangoni convection. Unless this can be sufficiently suppressed by other means, there may be no significant advantages to the proposed space processing of reactive semiconductors. Although some inert gas such as argon must be used for the corrosive liquid silicon, the Earth-based experiment uses air jets and various transparent oils, since the basic principle involved is the same. The first float zone is enclosed in a very small rectangular box with a quasi-planar free surface. Stable Marangoni convection has been achieved and velocities measured photographically. The air jet system with variable velocity and temperature is under construction. Three independent parameters must be optimized to attain maximum suppression: the gas velocity, angle of attack, and gas temperature.
Dressler, R. F.↗
Atomically resolved edges and defects in lead halide perovskites
Although edges and defects constitute only a small fraction of crystalline materials, they exert an outsized impact on a material′s properties. Organic–inorganic halide perovskites are promising next-generation semiconductor materials with superior cost effectiveness and interesting optoelectronic properties. However, clear images of their edges have remained challenging to obtain owing to their extreme sensitivity. Using truly high-speed ultralow-dose four-dimensional scanning transmission electron microscopy with dose fractionation, we perform ptychography at, to our knowledge, the lowest-dose atomic resolution to date, revealing not only the detailed atomic structure of the edges of a halide perovskite but also their structural dynamics. Here, a majority methylammonium (MA) and iodine (I) edge termination is observed in methylammonium lead iodide (MAPbI 3 ), and the damage rate of its edges and internal defects is found to depend on the concentration and type of vacancies present, with a preponderance of I vacancies in particular correlating with higher rates of damage.
4D-STEM↗
ReaxFF Parameter Set for Boron Clusters and Icosahedral Boron Crystals: Comparison with Density Functional Theory and Machine-Learning Potentials
Icosahedral boron materials, which include regular icosahedra of 12 boron atoms have gained increasing attention due to their potential applications as superhard materials, semiconductors, and energy storage media. However, the synthesis of high quality crystals of these materials has been a major barrier to the development of these applications. To enable computational prediction of synthesis conditions yielding high-quality icosahedral boron crystals, herein we tested and refined a set of ReaxFF parameters for the nucleation and growth of such crystals. We focused on matching the relative energies of small boron clusters obtained by density functional theory since such small clusters and similar motifs are likely present in crystal nuclei and at the interface of growing crystals. Using a training set of B 80 clusters, including a low-energy core–shell structure containing a B 12 icosahedron core and a high-energy single-shell structure produced in preliminary ReaxFF simulations, the ReaxFF parameter set was refined to better reproduce energies calculated by density functional theory (DFT). Among existing ReaxFF parameter sets and the machine-learning interatomic potentials MACE-MP-0, MACE-MP-0b3, MACE-MPA-0, PFP v7.0.0, and SevenNet-MF-ompa, only our new parameter set and PFP v7.0.0 correctly ranked these B 80 clusters. This refinement led to improved agreement with DFT for a test set of 58 clusters consisting of 8–103 boron atoms. Furthermore, our refined parameter set yielded greater local icosahedral structure than the previously existing ReaxFF parameter set for larger scale simulations of crystallization from supercooled liquid boron. Additionally, simulations of solid boron in contact with molten nickel using our refined ReaxFF parameters yielded a boron solubility value that agrees moderately well with experimental expectations, while the previous boron parameters gave a value that was much too low.
boron↗