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Results for “SWITCHES”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Evolution of magnetic interactions in a pressure-induced Jahn-Teller driven magnetic dimensionality switch
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Picosecond Joule heating in photoconductive switch electrodes
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Weyl node assisted conductivity switch in interfacial phase-change memory with van der Waals interfaces
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Unique Piezoelectric Properties of the Monoclinic Phase in Pb(Zr,Ti)O3 Ceramics: Large Lattice Strain and Negligible Domain Switching
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Giant Pressure Dependence and Dimensionality Switching in a Metal-Organic Quantum Antiferromagnet
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A suite of Switch I and Switch II mutant structures from the G-protein domain of FeoB
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A Compact Beam-Forming Network for Switched-Beam Arrays.
Abstract not provided.
Scalable Microring-Based Silicon Clos Switch Fabric With Switch-and-Select Stages
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Waveform Optimization for Resonantly Driven MEMS Switches Electrostatically Biased Near Pull-In.
Abstract not provided.
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators.
Abstract not provided.
PERFORMANCE ENHANCEMENTS AND RESULTS OF TESTING A NEW 6.7 MV LASER-TRIGGERED GAS SWITCH SYSTEM ON THE REFURBISHED Z ACCELERATOR.
Abstract not provided.
Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.