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Results for “Radiation effects on electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Spectroscopic analysis of radiation-generated changes in tensile properties of a polyetherimide film

The effects of electron radiation on Ultem, a polyetherimide were studied for doses from 2 x 10 to the 9th power to 6 x 10 to the 9th power rad. Specimens were studied for tensile property testing and for electron paramagnetic resonance and infrared spectroscopic measurements of molecular structure. A Faraday cup design and a method for remote temperature measurement were developed. The spectroscopic data show that radiation caused dehydrogenation of methyl groups, rupture of main-chain ether linkage, and opening of imide rings, all to form radicals and indicate that the so-formed atomic hydrogen attached to phenyl radicals, but not to phenoxyl radicals, which would have formed hydroxyls. The observed decays of the radiation-generated phenoxyl, gem-dimethyl, and carbonyl radicals were interpreted as a combining of the radicals to form crosslinking. This crosslinking is the probable cause of the major reduction in the elongation of the tensile specimens after irradiation. Subsequent classical solubility tests indicate that the irradiation caused massive crosslinking.

Long, E. R., Jr.↗
NASA NTRS1982

Effect of 1.33 Mev gamma radiation and 0.5 Mev electrons on the mechanical properties of graphite fiber composites

Epoxy/graphite fiber, polyimide/graphite fiber, and polysulfone/graphite fiber composites were exposed to 1.33 Mev gamma irradiation and 0.5 Mev electron bombardment for varying periods of time. The effects of the irradiation treatments on the breaking stress and Young's modulus were studied by a three point bending test. Effects were small; both electron radiation up to 5000 Mrad and gamma radiation up to 350 Mrad resulted in slight increases in both stress and modulus.

Fornes, R. E.↗
NASA NTRS1984

Annual Conference on Nuclear and Space Radiation Effects, 21st, Colorado Springs, CO, July 23-25, 1984, Proceedings

Radiation effects on electronic systems and devices (particularly spacecraft systems) are examined with attention given to such topics as radiation transport, energy deposition, and charge collection; single-event phenomena; basic mechanisms of radiation effects in structures and materials; and EMP phenomena. Also considered are radiation effects in integrated circuits, spacecraft charging and space radiation effects, hardness assurance for devices and systems, and SGEMP/IEMP phenomena.

Winokur, P. S.↗
DOE OSTI2020

Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride

Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. Here, we investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.

2D materials↗
NASA NTRS1983

Nuclear Science Symposium, 29th, and Symposium on Nuclear Power, 14th, Washington, DC, October 20-22, 1982, Proceedings

High-energy radiation detectors suitable for balloon-borne or space-based radiation event studies are described. The employment of NaI(Tl) scintillator bars for gamma ray detection is outlined, and the development of a fluorescent gated gas-filled scintillation proportional counter is reported. A high throughput nondispersive hard X ray spectrograph with angular resolution for cosmic bursts, transients, and sources has been constructed. Features of a sealed high pressure xenon filled imaging proportional counter with a 30 sq cm sensitive area are explored. Finally, the various radiation effects on electronic circuitry in a space environment are defined, and an MOS dosimeter for assaying the cumulative radiation flux in a spacecraft due to ambient conditions is characterized.

Davis, W. D.↗
DOE OSTI2021

Radiation Hardening – Test Capabilities (LANSCE) [Slides]

The Los Alamos Neutron Science Center (LANSCE) has exceptional facilities for research and testing of radiation effects in electronics. We have the best terrestrial neutron source for sea-level and airplane-altitude environments. We have a thermal neutron test capability at the Lujan Center and a proton beam test capability at the “Blue Room”. LANL has the programmatic mission to develop this radiation-effects program, namely space and satellite environments, high-performance computing (silent data corruption), and weapons delivery systems. We have a strong connection to industry which continues to grow.

42 ENGINEERING↗
DOE OSTI2023

Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation

Systems of spins engineered with tunable density and reduced dimensionality enable a number of advancements in quantum sensing and simulation. Defects in diamond, such as nitrogen-vacancy (NV) centers and substitutional nitrogen (P1 centers), are particularly promising solid-state platforms to explore. However, the ability to controllably create coherent, two-dimensional spin systems and characterize their properties, such as density, depth confinement, and coherence, is an outstanding materials challenge. We present a refined approach to engineer dense (≳1 ppm ∙ nm), 2D nitrogen, and NV layers in diamond using delta-doping during plasma-enhanced chemical vapor deposition epitaxial growth. We employ both traditional materials techniques, e.g., secondary ion mass spectrometry, alongside NV spin decoherence-based measurements to characterize the density and dimensionality of the P1 and NV layers. We find P1 densities of 5–10 ppm ∙ nm, NV densities between 1 and 3.5 ppm ∙ nm tuned via electron irradiation dosage, and depth confinement of the spin layer down to 1.6 nm. We also observe high (up to 0.74) ratios of NV to P1 centers and reproducibly long NV coherence times, dominated by dipolar interactions with the engineered P1 and NV spin baths.

36 MATERIALS SCIENCE↗