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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Infrared response measurements on radiation-damaged Si/Li/ detectors.

The improved infrared response (IRR) technique has been used to qualitatively compare radiation effects on Si(Li) detectors with energy levels reported for silicon in the literature. Measurements have been made on five commercial silicon detectors and one fabricated in-house, both before and after irradiation with fast neutrons, 1.9-MeV protons, and 1.6-MeV electrons. Effects dependent upon the extent of radiation damage have been observed. It seems likely that the photo-EMF, or photo-voltage, effect is the basic mechanism for the observation of IRR in p-i-n diodes with a wide i-region. Experimental characteristics of the IRR measurement are in agreement with those of the photovoltage effect.

Sher, A. H.↗
NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗
NASA NTRS1972

Extreme radiation damage in soil from Mare Fecunditatis.

High-voltage electron microscopy has been used to compare radiation effects in micron-size soil grains from the Luna 16 site (Mare Fecunditatis) and the four Apollo landing sites. Radiation damage by heavy solar particles is strikingly greater in the Luna 16 sample than in the other four samples. It is suggested that less movement of the soil at Mare Fecunditatis has taken place, perhaps because of its proximity to the limb and consequent lower exposure to energetic electrons in the earth's magnetospheric tail, which would cause electrostatic agitation of fine particles.

Phakey, P. P.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The initial results obtained from the Complementary Metal Oxide Semiconductors Radiation Effects Measurement experiment are presented. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on the ground simulation experiment with Co 60, indicated that the measured space damage is greater than predicted by a factor of two for shields thicker than 100 mils (2.54 mm), but agrees well with predictions for the thinner shields.

Cliff, R. A.↗
NASA NTRS1980

Simultaneous radiation damage and annealing of GaAs solar cells

In this report, concepts and equations are developed to describe the simultaneous radiation damage and annealing of solar cells. The annealing characteristics of three types of defects are employed to study three examples of continuous irradiation and annealing. One example shows that the effective damage could be reduced by a factor of fifty. The difficulty of a laboratory experiment properly simulating the effects in space are discussed. Potential advantages of continuous annealing such as reduction of stable defect formation and omission of radiation cover glasses are presented.

Heinbockel, J. H.↗
DOE OSTI2026

Radiation Damage Mechanisms in Oxide-Based Solid Electrolytes

Ion implantation is a promising approach to mitigate dendrite formation in metal anode solid-state batteries by modifying the chemical and mechanical properties of oxide-based electrolyte surfaces such as Li 7 La 3 Zr 2 O 12 (LLZO). Yet, the detailed atomistic mechanisms and potentially adverse side effects of ion implantation remain poorly understood. In this study, we used molecular dynamics simulations to elucidate the evolution of radiation-induced damage in LLZO. The results reveal that radiation damage is primarily driven by recoils from heavy ions in the lattice, producing antisite defect clusters whose density decreases as recoil energy increases, a counterintuitive finding that highlights complex cascade fragmentation. Radiation-induced disruption to the crystal sublattice connectivity, especially in the La–O network critical for Li-ion transport, leads to degradation in ionic pathways at low energies, while higher energy cascades can form new conduction pathways via enhanced Zr–O network connectivity. These findings provide a mechanistic foundation for optimizing ion implantation strategies that balance disruption of the lattice for surface modification for dendrite resistance with preservation of essential ionic conductivity.

Defects↗
DOE OSTI2024

Radiation damage study of POCO ZXF-5Q graphite for neutrino production targets using 4.5 MeV helium ions

To address the challenges of increased beam power and target survivability associated with next-generation particle production beam lines, high dose, high-energy proton beam conditions are simulated using irradiation from low-energy ion beams. A low-energy ion irradiation study of POCO ZXF-5Q graphite under conditions similar to those of the NuMI NT-02 neutrino production target at the Fermi National Accelerator Laboratory is reported. Helium ion irradiation was performed at 100 ∘ C to a maximum damage level of 0.9 displacements per atom (DPA). Irradiation induced hardening, swelling of the irradiated region, inter-plane lattice expansion, and intraplane lattice contraction with increasing ion fluence was observed using micromechanical (nanoindentation, atomic force microscopy) and electron microscopy (high-resolution imaging, selected area diffraction) characterization. Similar changes were also observed in post irradiation examination of the NT-02 target indicating that ion irradiation can be a valuable tool for estimating radiation damage in proton beam targets. Caution must be exercised though, because the hardening, lattice alteration, and swelling occur to different magnitudes for a given damage level. The observed hardening and embrittlement were greater for ion irradiated graphite. For He ion irradiated samples the lattice spacing changes were smaller at low damage levels (78% less expansion and 71% less contraction at 0.1 DPA) and larger at high damage levels (38% more expansion and 5% more contraction at 0.9 DPA) relative to that observed in the NT-02 target. The magnitude of swelling was 8.5× greater under ion irradiation which is influenced by the differing damage gradients and inclusion of implanted He ions in the region of interest.

43 PARTICLE ACCELERATORS↗