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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 109 records · Page 6
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Ultrathin polycrystalline 6,13-Bis(triisopropylsilylethynyl)-pentacene films

Ultrathin (<6 nm) polycrystalline films of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-P) are deposited with a two-step spin-coating process. The influence of spin-coating conditions on morphology of the resulting film was examined by atomic force microscopy. Film thickness and RMS surface roughness were in the range of 4.0–6.1 and 0.6–1.1 nm, respectively, except for small holes. Polycrystalline structure was confirmed by grazing incidence x-ray diffraction measurements. Near-edge x-ray absorption fine structure measurements suggested that the plane through aromatic rings of TIPS-P molecules was perpendicular to the substrate surface.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

Thin films of hafnium dioxide (HfO 2 ) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ring oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.

42 ENGINEERING↗
DOE OSTI2015

Large-area SiC membrane produced by plasma enhanced chemical vapor deposition at relatively high temperature

Advances in the growth of silicon carbide (SiC) thin films with outstanding thermal and mechanical properties have received considerable attention. However, the fabrication of large-area free-standing SiC membrane still remains a challenge. Here, the authors report a plasma enhanced chemical vapor deposition process at a relatively high temperature to improve the free-standing SiC membrane area. A systematic study on the microstructural, mechanical, and optical properties of hydrogenated polycrystalline silicon carbide (poly-SiC{sub x}:H) thin films deposited at 600 °C with different annealing temperatures has been performed. In the as-deposited state, SiC{sub x}:H thin films show a polycrystalline structure. The crystallinity degree can be further improved with the increase of the postdeposition annealing temperature. The resulting process produced free-standing 2-μm-thick SiC membranes up to 70 mm in diameter with root mean square roughness of 3.384 nm and optical transparency of about 70% at 632.8 nm wavelength. The large-area SiC membranes made out of poly-SiC{sub x}:H thin films deposited at a relatively high temperature can be beneficial for a wide variety of applications, such as x-ray diffractive optical elements, optical and mechanical filtering, lithography mask, lightweight space telescopes, etc.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Properties of nanostructured undoped ZrO{sub 2} thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells

Nanostructured ZrO{sub 2} thin films were prepared by thermal atomic layer deposition (ALD) and by plasma-enhanced atomic layer deposition (PEALD). The effects of the deposition conditions of temperature, reactant, plasma power, and duration upon the physical and chemical properties of ZrO{sub 2} films were investigated. The ZrO{sub 2} films by PEALD were polycrystalline and had low contamination, rough surfaces, and relatively large grains. Increasing the plasma power and duration led to a clear polycrystalline structure with relatively large grains due to the additional energy imparted by the plasma. After characterization, the films were incorporated as electrolytes in thin film solid oxide fuel cells, and the performance was measured at 500 °C. Despite similar structure and cathode morphology of the cells studied, the thin film solid oxide fuel cell with the ZrO{sub 2} thin film electrolyte by the thermal ALD at 250 °C exhibited the highest power density (38 mW/cm{sup 2}) because of the lowest average grain size at cathode/electrolyte interface.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Synthesis and electrical behavior of VO 2 thin films grown on SrRuO 3 electrode layers

VO 2 thin films were grown on conducting oxide underlayer SrRuO 3 buffered SrTiO 3 (111) and Si/SiO 2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO 2 films grown on SrRuO 3 buffered SrTiO 3 and polycrystalline structure for films grown on SrRuO 3 buffered Si/SiO 2 . X-ray photoelectron spectroscopy confirms a dominant presence of V 4+ in both films and establishes a high-quality growth of single-phase VO 2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO 3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO 2 on conducting SrRuO 3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Revealing Micro-Scale Doping Variations in Thin-Films via Simultaneous Luminescence and Current Collection Measurements

Doping thin films used for photovoltaic absorbers is both critical to maximize device voltage and challenging due to complex interactions between point defects in these materials. Such interactions can result in compensation of the intended dopant species, meaning that the active charge-carrier concentration is lower than the concentration incorporated dopants. Charge-carrier compensation is directly related to the open-circuit voltage (VOC) deficit, or magnitude of VOC relative to the theoretical limit. Understanding how the carrier concentration varies within thin-films is necessary to design material processing schedules to minimize this VOC deficit and produce more efficient devices. Unfortunately, measurements of the free carrier concentration are generally relevant at the device level and cannot resolve local differences. Resolving local doping differences in thin-films such as Cd(Se,Te), CZTS, and CIGSe requires techniques with micron or sub-micron spatial resolution due to the polycrystalline structure as well as intended and unintended composition variations in these materials. In this contribution, we show how simultaneous measurement of cathodoluminescence (CL) and electron-beam-induced current (EBIC) can be used to expose doping variations in Cd(Se,Te) thin-films. Simultaneous collection of these signals reveals unexpected differences in the electric field strength through the device thickness due to spatial variation in the carrier concentration.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2018

Ultrathin ZSM-5 zeolite nanosheet laminated membrane for high-flux desalination of concentrated brines

The tremendous potential of zeolite membranes for efficient molecular separation via size-exclusion effects is highly desired by the energy and chemical industries, but its practical realization has been hindered by nonselective permeation through intercrystalline spaces and high resistance to intracrystalline diffusion in the conventional zeolite membranes of randomly oriented polycrystalline structures. Here, we report the synthesis of ZSM-5 zeolite nanosheets with very large aspect ratios and nanometer-scale thickness in the preferred straight channel direction. We used these ZSM-5 nanosheets to fabricate ultrathin (<500 nm) laminated membranes on macroporous alumina substrates by a simple dip-coating process and subsequent consolidation via vapor-phase crystallization. This ultrathin b -oriented ZSM-5 membrane has demonstrated extraordinary water flux combined with high salt rejection in pervaporation desalination for brines containing up to 24 weight % of dissolved NaCl. The ZSM-5 nanosheets may also offer opportunities to developing high-performance battery ion separators, catalysts, adsorbents, and thin-film sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Short-Range Order in Amorphous and Crystalline Ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2}

The microstructures of amorphous and polycrystalline ferroelectric Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films are studied by X-ray spectroscopy and ellipsometry. EXAFS spectra demonstrate that the amorphous film consists of an “incompletely mixed” solid solution of metallic oxides HfO{sub 2} and ZrO{sub 2}. After rapid thermal annealing, the mixed Hf{sub 0.5}Zr{sub 0.5}O{sub 2} oxide films have a more ordered polycrystalline structure, and individual Hf and Zr monoxide islands are formed in the films. These islands are several nanometers in size and have a structure that is similar to the monoclinic structure of HfO{sub 2} and ZrO{sub 2}. The presence of the HfO{sub 2} and ZrO{sub 2} phases in the Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films is also detected by ellipsometry.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Uranium and cesium diffusion in fuel cladding of electrogenerating channel

The results of reactor tests of a carbonitride fuel in a single-crystal cladding from a molybdenum-based alloy can be used in substantiating the operational reliability of fuels in developing a project of a megawatt space nuclear power plant. The results of experimental studies of uranium and cesium penetration into the single-crystal cladding of fuel elements with a carbonitride fuel are interpreted. Those fuel elements passed nuclear power tests in the Ya-82 pilot plant for 8300 h at a temperature of about 1500°C. It is shown that the diffusion coefficients for uranium diffusion into the cladding are virtually coincident with the diffusion coefficients measured earlier for uranium diffusion into polycrystalline molybdenum. It is found that the penetration of uranium into the cladding is likely to occur only in the case of a direct contact between the cladding and fuel. The experimentally observed nonmonotonic uranium-concentration profiles are explained in terms of predominant uranium diffusion along grain boundaries. It is shown that a substantially nonmonotonic behavior observed in our experiment for the uranium-concentration profile may be explained by the presence of a polycrystalline structure of the cladding in the surface region from its inner side. The diffusion coefficient is estimated for the grain-boundary diffusion of uranium. The diffusion coefficients for cesium are estimated on the basis of experimental data obtained in the present study.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2018

Rotational magnetic anisotropy in polycrystalline FePt films fabricated by solid-state synthesis

It is shown that annealing 550°C of the Fe/Pt bilayer films fabricated by layer-by-layer deposition onto polycrystalline Al{sub 2}O{sub 3} substrates in an atomic ratio of Fe: Pt = 71: 29 leads to the formation of the inplane rotational magnetic anisotropy with the easy axis that can be aligned by magnetic field in any direction in the film plane. The increase in the Pt content in the investigated film system to 50 at % leads to an increase in the anisotropy constant to 6.5 × 10{sup 6} erg/cm{sup 3}, which exceeds the value in the Fe{sub 71}Pt{sub 29} sample by a factor of 6. In addition to the rotational anisotropy, the Fe50Pt50 films are characterized by the perpendicular rotational magnetic anisotropy, which is higher than the film shape anisotropy. Therefore, the easy axis in these samples can be aligned by magnetic field in any spatial direction. According to the X-ray and magnetic measurement data, the synthesized samples have a polycrystalline structure consisting of two ordered phases: magnetically hard L1{sub 0}–FePt and magnetically soft L1{sub 2}–Fe{sub 3}Pt. This gives us grounds to suggest that the rotational magnetic anisotropy originates from the epitaxial intergrowth and exchange coupling of these two phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Photodielectric Processes in ZnS : Cu Polycrystalline Layers

The frequency dependences of dielectric parameters of zinc sulfide electroluminescent polycrystalline structures doped with copper are studied in the dark and under light excitation in the visible wavelength range. A positive photodielectric effect most pronounced in the low-frequency range was revealed. The experimental results are explained within framework of formation of a space charge in the bulk of a semiconductor. The analysis of data indicates they can be correlated with luminance characteristics of an electroluminescent layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Ultimate compressive strength and severe plastic deformation of equilibrated single-crystalline copper nanoparticles

Mechanical properties and deformation mechanisms of defect-free copper nanoparticles are investigated by combining experiments with atomistic simulations. The compressive strength of the particles increases with decreasing size and tends to saturate near the theoretical strength in the small-size limit. In this limit, the intrinsic size dependence of the strength is governed by the stochastic nature of dislocation nucleation near the particle surface. The particle deformation process evolves from the initial strain softening to strain hardening as the particle accumulates residual damage. The normalized strength-size relation for Cu is compared with those for Au, Ni, and Pt. The lack of universal behavior among the four FCC metals is discussed. Heavily deformed Cu nanoparticles develop polycrystalline structures and change the lattice orientation from [111] to [110]. The experiments and simulations reveal the twinning mechanism of the lattice rotation leading to the new grain formation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

We report the growth of nanoscale hafnium dioxide (HfO 2 ) and zirconium dioxide (ZrO 2 ) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO 2 and ZrO 2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH 3 ) 2 ] 4 ) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH 3 ) 2 ] 4 ) were used as the precursors, while O 2 gas was used as the reactive gas. The PE-ALD-grown HfO 2 and ZrO 2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO 2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO 2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO 2 and ZrO 2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO 2 and ZrO 2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO 2 and ZrO 2 thin films were compared.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1965

Effect of Nuclear Radiation on Materials at Cryogenic Temperatures

The tensile properties for 33 polycrystalline structural materials including aluminum, titanium, nickel and iron alloys were obtained at -256.5 C (30 deg R) after irradiation exposure at this temperature to 10(exp 17) nvt (E greater than 0.5 Mev), at -256.5 C without previous irradiation, and at approximately 27 C (540 deg R) without previous irradiation. The data were evaluated statistically to permit identification of cryogenic effects and nuclear-cryogenic effects. A number of conclusions were drawn regarding suitability of certain of the materials for use in nuclear-cryogenic applications and regarding the need for further investigation.

NEUTRON BOMBARDMENT↗
NASA NTRS1987

Evolution of interstellar dust

The composition, origins, and evolution of interstellar dust (ISD) are examined, reviewing the results of recent observational and theoretical investigations. Topics discussed include amorphous and polycrystalline structures; the relationship between amorphous C, graphite, and polycyclic aromatic hydrocarbons; observational techniques for determining ISD structure and composition; ISD formation in outflows from late-type giants, planetary nebulae, and novae; destruction of ISD by shocks; the formation of ISD in the ISM; and the relationship between ISD and interplanetary dust. IR spectroscopy of molecular ices and icy grain mantles is considered in detail, and it is shown that typical grain mantles consist of a 1/0.6/0.05/0.05 mixture of H2O, CH3OH, CO, and NH3.

Tielens, A. G. G. M.↗
NASA NTRS1995

Test load verification through strain data analysis

A traditional binding acceptance criterion on polycrystalline structures is the experimental verification of the ultimate factor of safety. At fracture, the induced strain is inelastic and about an order-of-magnitude greater than designed for maximum expected operational limit. At this extreme strained condition, the structure may rotate and displace at the applied verification load such as to unknowingly distort the load transfer into the static test article. Test may result in erroneously accepting a submarginal design or rejecting a reliable one. A technique was developed to identify, monitor, and assess the load transmission error through two back-to-back surface-measured strain data. The technique is programmed for expediency and convenience. Though the method was developed to support affordable aerostructures, the method is also applicable for most high-performance air and surface transportation structural systems.

Verderaime, V.↗
NASA NTRS2010

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .

Courey, Karim J.↗
NASA NTRS2008

An Investigation of the Electrical Short Circuit Characteristics of Tin Whiskers

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has a currently unknown probability associated with it. Due to contact resistance electrical shorts may not occur at lower voltage levels. In this experiment, we study the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From this data we can estimate the probability of an electrical short, as a function of voltage, given that a free tin whisker has bridged two adjacent exposed electrical conductors. Also, three tin whiskers grown from the same Space Shuttle Orbiter card guide used in the aforementioned experiment were cross-sectioned and studied using a focused ion beam (FIB). The rare polycrystalline structure seen in the FIB cross section was confirmed using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size to determine that the tin plating on the card guides had a bright finish.

Courey, Karim J.↗