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First-Principles Simulations Correlating X-ray Absorption Spectroscopy Features to Point Defects in h -BN
Hexagonal boron nitride (h-BN) is a promising material for a range of emerging applications in electronics, quantum information technology, and energy storage. Soft X-ray absorption spectroscopy (XAS) is powerful to reveal atomic details of BN, especially in the presence of defects. However, correlating XAS spectral features with specific defect types remains elusive. In this Letter, we report B K-edge XAS measurements of sputter-deposited turbostratic h-BN films and use a combination of first-principles spectroscopic simulations and analysis of detailed electronic structure and local charge transfer characteristics to elucidate their unique spectroscopic features. Our results show that the two main defect-related peaks, between the main π* resonances of h-BN and B2O3, as typically observed in BN films deposited by energetic condensation or bombarded with energetic ions, are associated with electronic states of H-passivated B atoms bonded to one and two oxygen impurity atoms, respectively. These conclusions hold significant implications for applications relying on defect-mediated properties of h-BN.
Quasi-layered Crystal Structure Coupled with Point Defects Leading to Ultralow Lattice Thermal Condu
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Modeling Excited States of Point Defects in Materials from Many-Body Perturbation Theory
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First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn 3 P 2
The shallow V Zn acceptors are proposed as the source for p-type doping in the Zn 3 P 2 solar absorber. Not only V Zn but also deep-level defects P Zn and P i have increased concentrations in non-stoichiometric, P-rich Zn 3 P 2 .
Quantitative modeling of point defects in β-Ga 2 O 3 combining hybrid functional energetics with semiconductor and processes thermodynamics
Incorporating temperature-dependent bandgap, chemical potentials from thermochemistry & vibrational entropy into DFT defect modeling yields realistic quantitative predictions for defect concentrations in bulk-grown β-Ga 2 O 3 .
Point defects at grain boundaries can create structural instabilities and persistent deep traps in metal halide perovskites
Perovskite grain boundaries exhibit slow fluctuations and transient charge trap states. Pb interstitials lead to boundary reconstruction and long-lived trap states due to Pb trimers.
Competitive formation of intercalated versus supported metal nanoclusters during deposition on layered materials with surface point defects
Intercalated metal nanoclusters (NCs) can be formed under the surface of graphite after sputtering to generate surface “portal” defects that allow deposited atoms to reach the subsurface gallery. Although, there is a competition between formation of supported NCs on top of the surface and intercalated NCs under the surface, the latter only dominating at sufficiently high temperature. A stochastic model incorporating appropriate system thermodynamics and kinetics is developed to capture this complex and competitive nucleation and growth process. Kinetic Monte Carlo simulation shows that the model captures experimental trends observed for Cu and other metals and reveals that higher temperatures are needed to facilitate detachment of atoms from supported NCs enabling them to reach the gallery.
Influence of point defects on the electronic and topological properties of monolayer WTe 2
In some topological insulators such as monolayers of WTe 2 or graphene with spin-orbit coupling, band inversion originates from chemical bonding and space group symmetry, in contrast to materials such as Bi 2 Se 3 , where the band inversion derives from relativistic effects in the atoms. In the former, band inversion is susceptible to changes of the chemical environment, e.g., by defects, while the latter are less affected by defects due to the larger energy scale associated with atomic relativistic effects. Motivated by recent experiments, we study the effect of Te vacancies and Te adatoms on the electronic properties of WTe 2 . We find that the Te vacancies have a formation energy of 2.21 eV, while the formation energy of the Te adatoms is much lower with 0.72 eV. Here, the vacancies strongly influence the band structure and we present evidence that band inversion is already reversed at the nominal composition of WTe 1.97 . In contrast, we show that the adatoms do not change the electronic structure in the vicinity of the Fermi level and thus the topological properties.
Point defect induced incommensurate dipole moments in the K Ca 2 Nb 3 O 10 Dion-Jacobson layered perovskite
Local structural distortions due to isolated atomic defects and defect complexes strongly affect the macroscopic properties of oxide ceramics. While the characterization of local defect structures is more common in simple AB O 3 perovskites, unambiguous determination of the same in layered perovskites is more difficult due to their complex crystal structures. In this study, we combined x-ray pair distribution function and density functional theory calculations to characterize the structure of cation-oxygen divacancy pairs in a Dion-Jacobson (D-J) layered perovskite. Our results indicate that local incommensurate dipole moments with polarization density in the range of ~ 0.1–17μC/cm 2 are created due to divacancy-induced structural distortions in the D-J phase K Ca 2 Nb 3 O 10 . This is comparable with defect dipole moments observed in well-known perovskite ferroelectrics. The current results imply that controlling the atomic defects can potentially lead to significant control of dielectric properties in D-J layered perovskites.
Scandium-based point defect in AlN for quantum information processing
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Point defects in CdTe and CdSeTe alloy: a first principles investigation with DFT+U
CdTe and its alloy CdSeTe are widely used in optoelectronic devices, such as radiation detectors and solar cells, due to their superior electrical properties. However, the formation of defects and defect complexes in these materials can significantly affect their performance. As a result, understanding the defect formation and recombination processes in CdTe and CdSeTe alloy is of great importance. In recent years, density functional theory (DFT) calculations have emerged as a powerful tool for investigating the properties of defects in semiconductors. In this paper, we use DFT+U calculations to comprehensively study the properties of intrinsic defects as well as extrinsic defects induced by commonly used dopants, such as Cu and group V elements, in CdTe and CdSeTe alloy. This work provides insights into the effects of these defects on the electrical and optical properties of the material.
Thermodynamic Modeling of Point Defects in Triple Conducting Perovskite Ba 0.95 La 0.05 FeO 3- $_δ$ with Incorporation of the Hydride Defect Formation Reaction for Solid Oxide Cells
Distinct from the proton defect, the hydride defect species may be present in certain perovskite materials in reducing environments such as in fuel electrodes of solid oxide cells (SOCs) or on the reducing side of ceramic membranes. A generalized defect thermodynamic model was developed for the triple-conducting perovskites (La,Ba)Fe 1-x M x O 3-δ (M = Y and Zr) to allow inclusion of the hydride defect formation reaction in addition to the other three main defect reactions, namely, the oxygen vacancy formation, hydration, and charge disproportionation reactions. This comprehensive defect model also allows the incorporation of polynomial functional forms of oxygen nonstoichiometry δ to describe the defect reaction energies and entropies and to enable refinements of the defect reaction equilibrium constants in the defect thermodynamic analysis. As a first step, the developed model is applied to the Ba 0.95 La 0.05 FeO 3-δ material as an illustrative system to obtain its Brouwer diagrams with both the proton and hydride defects in relevant SOC conditions, particularly for more reducing environments. In conclusion, the results provide direct guidance on the influence of electronic and ionic defect concentrations upon thermodynamic properties and ultimately on the performance of Ba 0.95 La 0.05 FeO 3-δ and potentially other (La,Ba)Fe 1-x M x O 3-δ perovskite materials involved in SOC applications.
Oxygen non-stoichiometry and point defect equilibria in (La1/6Pr1/6Nd1/6Gd1/6Ba1/6Sr1/6)MnO3-δ
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Theory for intrinsic point defects in 3C-SiC reassessed using converged large-supercell calculations.
Abstract not provided.
First-Principles Study of Tritium Trapping by Point Defects in Fe-Al Aluminide Coating Phases
Density functional theory simulations have been carried out to investigate the potential for tritium trapping by metal vacancies in five different Fe-Al aluminide coating phases. It was found that tritiation of Fe and Ni vacancies is generally less favorable than the tritiation of Al vacancies. However, for the first tritiation, a trend in the defect formation energy can be obtained such that metal defects in the Fe 2 Al x family of materials (i.e., Fe 2 Al 4 , Fe 2 Al 5 , and Fe 2 Al 6 ) trap tritium species more favorably than metal vacancies in Fe 4 Al 13 and FeNiAl 5 . Further investigations using ab initio thermodynamics calculations confirmed that trend for a range of tritium partial pressure at a temperature of 700 K. Especially, it was shown that the energy difference between tritiated and non-tritiated metal vacancies is smaller and more favorable for the Fe 2 Al x family, followed by Fe 4 Al 13 , and FeNiAl 5 . While this study shows that tritium interacts differently in the various Fe-Al aluminide phases, it also suggests that tritium trapping and retention could be more efficient if metal defects are present in some Fe-Al phases.