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At least 109 records · Page 6

Slot clock recovery in optical PPM communication systems with avalanche photodiode photodetectors

Slot timing recovery in a direct-detection optical PPM communication system can be achieved by processing the photodetector output waveform with a nonlinear device whose output forms the input to a phase-locked loop. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (wavelength = 834 nm) and a silicon avalanche photodiode photodetector. The system used Q = 4 PPM signaling and operated at a source data rate of 25 Mbits/s. The mathematical model developed to compute the rms phase error of the recovered clock is shown to be in good agreement with results of actual measurements of phase errors. The use of the recovered slot clock in the receiver resulted in no significant degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the -6th at a received optical signal energy of 55 detected photons per information bit.

Davidson, Frederic M.↗

Sounding rocket measurement of the absolute solar EUV flux utilizing a silicon photodiode

A newly developed stable and high quantum efficiency silicon photodiode was used to obtain an accurate measurement of the integrated absolute magnitude of the solar extreme UV photon flux in the spectral region between 50 and 800 A. The adjusted daily 10.7-cm solar radio flux and sunspot number were 168.4 and 121, respectively. The unattenuated absolute value of the solar EUV flux at 1 AU in the specified wavelength region was 6.81 x 10 to the 10th photons/sq cm per s. Based on a nominal probable error of 7 percent for National Institute of Standards and Technology detector efficiency measurements in the 50- to 500-A region (5 percent on longer wavelength measurements between 500 and 1216 A), and based on experimental errors associated with the present rocket instrumentation and analysis, a conservative total error estimate of about 14 percent is assigned to the absolute integral solar flux obtained.

Ogawa, H. S.↗

Word timing recovery in direct detection optical PPM communication systems with avalanche photodiodes using a phase lock loop

A technique for word timing recovery in a direct-detection optical PPM communication system is described. It tracks on back-to-back pulse pairs in the received random PPM data sequences with the use of a phase locked loop. The experimental system consisted of an 833-nm AlGaAs laser diode transmitter and a silicon avalanche photodiode photodetector, and it used Q = 4 PPM signaling at source data rate 25 Mb/s. The mathematical model developed to describe system performance is shown to be in good agreement with the experimental measurements. Use of this recovered PPM word clock with a slot clock recovery system caused no measurable penalty in receiver sensitivity. The completely self-synchronized receiver was capable of acquiring and maintaining both slot and word synchronizations for input optical signal levels as low as 20 average detected photons per information bit. The receiver achieved a bit error probability of 10 to the -6th at less than 60 average detected photons per information bit.

Sun, Xiaoli↗

Si(1-x)Ge(x)/Si Infrared Photodiodes

Cutoff wavelengths depend on x and also adjusted somewhat via reverse bias. Si1-xGex photodiodes with cutoff wavelengths in and beyond practically important range of 8 to 12 micrometers made by molecular-beam epitaxy. Compatible (in terms of fabrication processes) with silicon readout circuitry, exhibit long-term stability, manufactured with sufficient uniformity for use in focal-plane arrays; and operate at temperatures approximately greater than 65 K, for which temperatures small, portable refrigerators available.

Lin, True-Lon↗

Avalanche photodiode photon counting receivers for space-borne lidars

Avalanche photodiodes (APD) are studied for uses as photon counting detectors in spaceborne lidars. Non-breakdown APD photon counters, in which the APD's are biased below the breakdown point, are shown to outperform: (1) conventional APD photon counters biased above the breakdown point; (2) conventional APD photon counters biased above the breakdown point; and (3) APD's in analog mode when the received optical signal is extremely weak. Non-breakdown APD photon counters were shown experimentally to achieve an effective photon counting quantum efficiency of 5.0 percent at lambda = 820 nm with a dead time of 15 ns and a dark count rate of 7000/s which agreed with the theoretically predicted values. The interarrival times of the counts followed an exponential distribution and the counting statistics appeared to follow a Poisson distribution with no after pulsing. It is predicted that the effective photon counting quantum efficiency can be improved to 18.7 percent at lambda = 820 nm and 1.46 percent at lambda = 1060 nm with a dead time of a few nanoseconds by using more advanced commercially available electronic components.

Sun, Xiaoli↗

Design and testing of an active quenching circuit for an avalanche photodiode photon detector

The photon-detection capabilities of avalanche photodiodes (APDs) operating above their theoretical breakdown voltages are described, with particular attention given to the needs and methods of quenching an avalanche once breakdown has occurred. A brief background on the motives of and previous work with this mode of operation is presented. Finally, a description of the design and testing of an active quenching circuit is given. Although the active quenching circuit did not perform as expected, knowledge was gained as to the signal amplitudes necessary for quenching and the need for a better model for the above-breakdown circuit characteristics of the Geiger-mode APD.

Arbel, D.↗

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Ackley, D. E.↗

High resolution, low energy avalanche photodiode X-ray detectors

Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI2, these device operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI2. In addition, they are rugged and appear to be indefinitely stable.

Farrell, R.↗

Receiver characteristics of laser altimeters with avalanche photodiodes

The receiver characteristics of a laser altimeter system containing an avalanche photodiode photodetector are analyzed using the Gaussian approximation, the saddle-point approximation, and a nearly exact analysis. The last two methods are shown to yield very similar results except when the background noise is extremely low and the probability of false alarm is high. However, the Gaussian approximation method is shown to cause significant errors even under relatively high levels of background noise and received signal energy.

Sun, Xiaoli↗

Laser damage tests on InSb photodiodes at 1.064 micron and 0.532 micron

InSb photodiodes were examined for performance degradation after pulsed laser illumination at 0.532 micron and 1.064 micron. Incident laser powers ranged from 6 x 10 exp-18 micron-watts to 16 micron-watts in a 50 pm diameter spot. Dark current and spectral response were both measured before and after illumination. Dark current measurements were taken with the diode blanked off and viewing only 77 K surfaces. Long term stability tests demonstrated that the blackbody did not exhibit long term drifts. Other tests showed that room temperature variations did not affect the diode signal chain or the digitization electronics used in data acquisition. Results of the experiment show that the diodes did not exhibit changes in dark current or spectral response performance as a result of the laser illumination. A typical change in diode spectral response (before/after laser exposure) was about 0.2 percent +/- 0.2 percent.

Bearman, G. H.↗

Reliability assessment of multiple quantum well avalanche photodiodes

The reliability of doped-barrier AlGaAs/GsAs multi-quantum well avalanche photodiodes fabricated by molecular beam epitaxy is investigated via accelerated life tests. Dark current and breakdown voltage were the parameters monitored. The activation energy of the degradation mechanism and median device lifetime were determined. Device failure probability as a function of time was computed using the lognormal model. Analysis using the electron beam induced current method revealed the degradation to be caused by ionic impurities or contamination in the passivation layer.

Yun, Ilgu↗

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Menkara, H. M.↗

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗

Temperature Control of Avalanche Photodiode Using Thermoelectric Cooler

Avalanche photodiodes (APDS) are quantum optical detectors that are used for visible and near infrared optical detection applications. Although APDs are compact, rugged, and have an internal gain mechanism that is suitable for low light intensity; their responsivity, and therefore their output, is strongly dependent on the device temperature. Thermoelectric coolers (TEC) offers a suitable solution to this problem. A TEC is a solid state cooling device, which can be controlled by changing its current. TECs are compact and rugged, and they can precisely control the temperature to within 0.1 C with more than a 150 C temperature gradient between its surfaces. In this Memorandum, a proportional integral (PI) temperature controller for APDs using a TEC is discussed. The controller is compact and can successfully cool the APD to almost 0 C in an ambient temperature environment of up to 27 C.

Refaat, Tamer F.↗

Numerical Examination of Silicon Avalanche Photodiodes Operated in Charge Storage Mode

The behavior of silicon-based avalanche photodiodes (APD's) operated in the charge storage mode is examined. In the charge storage mode, the diodes are periodically biased to a sub-breakdown voltage and then open-circuited. During this integration period, photo-excited and thermally generated carriers are accumulated within the structure. The dynamics of this accumulation and its effects upon the avalanching of the diode warrants a detailed, fully numerical analysis. The salient features of this investigation include device sensitivity to the input photo-current including the self-quenching effect of the diode and its limitations in sensing low light levels, the dependence of the response on the bulk lifetime and hence on the generation current within the device, the initial gain, transient response, dependence of the device uniformity upon performance, and the quantity of storable charge within the device. To achieve these tasks our device simulator, STEBS-2D, was utilized. A modified current-controlled boundary condition is employed which allows for the simulation of the isolated diode after the initial reset bias has been applied. With this boundary condition, it is possible to establish a steady-state voltage on the ohmic contact and then effectively remove the device from the external circuit while still including effects from surface recombination, trapped surface charge, and leakage current from the read-out electronics.

Parks, Joseph W., Jr.↗

Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

Refaat, Tamer F.↗

Avalanche Photodiode Arrays for Optical Communications Receivers

An avalanche photodiode (APD) array for ground-based optical communications receivers is investigated for the reception of optical signals through the turbulent atmosphere. Kolmogorov phase screen simulations are used to generate realistic spatial distributions of the received optical field. It is shown that use of an APD array for pulse-position modulation detection can improve performance by up to 4 dB over single APD detection in the presence of turbulence, but that photon-counting detector arrays yield even greater gains.

Srinivasan, M.↗