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Irradiation damage of drift-field solar cells by low energy protons - computer analysis of current-voltage and spectral response data
Irradiation damage of drift-field solar cells by low energy protons - calibration of irradiation apparatus and monitoring equipment
We describe recent technology developments aimed at large CCD imagers for space based applications in the visible and UV. Some of the principal areas of effort include work on reducing device degradation in the natural space-radiation environment, improvements in quantum efficiency in the visible and UV, and larger-device formats. One of the most serious hazards for space based CCD's operating at low signal levels is the displacement damage resulting from bombardment by energetic protons. Such damage degrades charge-transfer efficiency and increases dark current. We have achieved improved hardness to proton-induced displacement damage by selective ion implants into the CCD channel and by reduced temperature of operation. To attain high quantum efficiency across the visible and UV we have developed a technology for back-illuminated CCD's. With suitable antireflection (AR) coatings such devices have quantum efficiencies near 90 percent in the 500-700-nm band. In the UV band from 200 to 400 nm, where it is difficult to find coatings that are sufficiently transparent and can provide good matching to the high refractive index of silicon, we have been able to substantially increase the quantum efficiency using a thin film of HfO2 as an AR coating. These technology efforts were applied to a 420 x 420-pixel frame-transfer imager, and future work will be extended to a 1024 x 1024-pixel device now under development.
The measured degradation of epitaxial shallow homojunction n(+)/p InP solar cells under 1 MeV electron irradiation is correlated with that measured under 3 MeV proton irradiation based on 'displacement damage dose'. The measured data is analyzed as a function of displacement damage dose from which an electron to proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.
Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.
Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.
When protons or heavy ions from galactic cosmic rays (GCR) or solar particle events (SPE) interact with target nuclei in spacecraft, there can be two different types of interactions. The more familiar strong nuclear interaction often dominates and is responsible for nuclear fragmentation in either the GCR or SPE projectile nucleus or the spacecraft target nucleus. (Of course, the proton does not break up, except possibly to produce pions or other hadrons.) The less familiar, second type of interaction is due to the very strong electromagnetic fields that exist when two charged nuclei pass very close to each other. This process is called electromagnetic dissociation (EMD) and primarily results in the emission of neutrons, protons and light ions (isotopes of hydrogen and helium). The cross section for particle production is approximately defined as the number of particles produced in nucleus-nucleus collisions or other types of reactions. (There are various kinematic and other factors which multiply the particle number to arrive at the cross section.) Strong, nuclear interactions usually dominate the nuclear reactions of most interest that occur between GCR and target nuclei. However, for heavy nuclei (near Fe and beyond) at high energy the EMD cross section can be much larger than the strong nuclear interaction cross section. This paper poses a question: Are there projectile or target nuclei combinations in the interaction of GCR or SPE where the EMD reaction cross section plays a dominant role? If the answer is affirmative, then EMD mechanisms should be an integral part of codes that are used to predict damage to spacecraft electronics. The question can become more fine-tuned and one can ask about total reaction cross sections as compared to double differential cross sections. These issues will be addressed in the present paper.
The degradation in performance of lithium-compensated silicon nuclear particle detectors induced by irradiation at room temperature with 0.6-MeV and 1.5-MeV electrons, 1.9-MeV protons, and fast neutrons from a plutonium-beryllium source has been investigated. With increasing fluence, the irradiations produced an increase of detector leakage current, noise, capacitance, and a degradation in the performance of the detector as a charged-particle energy spectrometer. Following the irradiations, annealing effects were observed when the detectors were reverse-biased at their recommended operating voltages. Upon removal of bias, a continuous degradation of detector performance characteristics occurred. Detectors which had been damaged by electrons and protons exhibited a stabilization in their characteristics within two weeks after irradiation, whereas detectors damaged by neutrons had a continuous degradation of performance over a period of several months.
Characteristics and properties of defects induced in silicon and germanium by 10- to 60-mev electrons and 20- to 130-mev protons
When determining the best solar cell technology for a particular space flight mission, accurate prediction of solar cell performance in a space radiation environment is essential. The current methodology used to make such predictions requires extensive experimental data measured under both electron and proton irradiation. Due to the rising cost of accelerators and irradiation facilities, such extensive data sets are expensive to obtain. Moreover, with the rapid development of novel cell designs, the necessary data are often not available. Therefore, a method for predicting cell degradation based on limited data is needed. Such a method has been developed at the Naval Research Laboratory based on damage correlation using 'displacement damage dose' which is the product of the non-ionizing energy loss (NIEL) and the particle fluence. Displacement damage dose is a direct analog of the ionization dose used to correlate the effects of ionizing radiations. In this method, the performance of a solar cell in a complex radiation environment can be predicted from data on a single proton energy and two electron energies, or one proton energy, one electron energy, and Co(exp 60) gammas. This method has been used to accurately predict the extensive data set measured by Anspaugh on GaAs/Ge solar cells under a wide range of electron and proton energies. In this paper, the method is applied to InP solar cells using data measured under 1 MeV electron and 3 MeV proton irradiations, and the calculations are shown to agree well with the measured data. In addition to providing accurate damage predictions, this method also provides a basis for quantitative comparisons of the performance of different cell technologies. The performance of the present InP cells is compared to that published for GaAs/Ge cells. The results show InP to be inherently more resistant to displacement energy deposition than GaAs/Ge.
Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.
The severe degradation of optocouplers in space has been shown to be mainly due to proton displacement damage in the light-emitting diodes that are used within the optocouplers. However, a variety of LED technologies can be used in optocouplers and their sensitivity to proton displacement damage varies by about two orders of magnitude. Optocouplers are very simple hybrid devices, and the type of LED can be readily changed by the manufacturers with little cost impact. many optocoupler manufacturers purchase LEDs from outside sources with little knowledge or control of the manufacturing process used for the LED, leading to the possibility of very dramatic differences in radiation response (JPL has observed such differences for one type of optocoupler that is used in a hybrid power converter).
This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distribution were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Car10 code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. The nuclear elastic component (also calculated using the MCNPX) has a negligible effect on the shape of the damage distribution. The Coulombic contribution was calculated using MRED [3,4], a Geant4 [4,5] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.
This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [1]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED [3-5], a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.
The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently.